CA2380145C - Croissance de monocristaux volumineux de nitrure d'aluminium a partir d'un bain de fusion - Google Patents
Croissance de monocristaux volumineux de nitrure d'aluminium a partir d'un bain de fusion Download PDFInfo
- Publication number
- CA2380145C CA2380145C CA002380145A CA2380145A CA2380145C CA 2380145 C CA2380145 C CA 2380145C CA 002380145 A CA002380145 A CA 002380145A CA 2380145 A CA2380145 A CA 2380145A CA 2380145 C CA2380145 C CA 2380145C
- Authority
- CA
- Canada
- Prior art keywords
- melt
- nitrogen
- aln
- crystal
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 70
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 239000000155 melt Substances 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 14
- 239000010439 graphite Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical class [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- -1 nitrogen-containing compound Chemical class 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 40
- 238000010438 heat treatment Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005499 meniscus Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- NJXPYZHXZZCTNI-UHFFFAOYSA-N 3-aminobenzonitrile Chemical compound NC1=CC=CC(C#N)=C1 NJXPYZHXZZCTNI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
On fait croître à des températures élevées des monocristaux de grand diamètre en nitrure d'aluminium (AIN). Un cristal germe (130), maintenu à une température inférieure à celle de l'aluminium liquide environnant, est tiré du bain de fusion, tandis que le nitrure d'aluminium (AIN) qui est formé dans le bain de fusion est déposé sur le cristal germe (130). Un appareil de réalisation de ce procédé est également décrit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1999/016619 WO2001007690A1 (fr) | 1997-10-06 | 1999-07-22 | Croissance de monocristaux volumineux de nitrure d'aluminium a partir d'un bain de fusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2380145A1 CA2380145A1 (fr) | 2001-02-01 |
| CA2380145C true CA2380145C (fr) | 2009-04-28 |
Family
ID=22273254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002380145A Expired - Lifetime CA2380145C (fr) | 1999-07-22 | 1999-07-22 | Croissance de monocristaux volumineux de nitrure d'aluminium a partir d'un bain de fusion |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4836377B2 (fr) |
| AU (1) | AU5223699A (fr) |
| CA (1) | CA2380145C (fr) |
| DE (1) | DE69940563D1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60330406D1 (de) | 2002-12-19 | 2010-01-14 | Nuevolution As | Durch quasizufallsstrukturen und funktionen geführte synthesemethode |
| JP4558584B2 (ja) | 2004-07-08 | 2010-10-06 | 日本碍子株式会社 | 窒化アルミニウム単結晶の製造方法 |
| JP4591183B2 (ja) * | 2005-04-26 | 2010-12-01 | 住友金属工業株式会社 | ＡｌＮ単結晶の製造方法 |
| JP4513749B2 (ja) * | 2006-01-04 | 2010-07-28 | 住友金属工業株式会社 | 単結晶の製造方法 |
| JP5229735B2 (ja) * | 2006-09-07 | 2013-07-03 | タマティーエルオー株式会社 | ＡｌＮ結晶の製造方法 |
-
1999
- 1999-07-22 AU AU52236/99A patent/AU5223699A/en not_active Abandoned
- 1999-07-22 DE DE69940563T patent/DE69940563D1/de not_active Expired - Lifetime
- 1999-07-22 CA CA002380145A patent/CA2380145C/fr not_active Expired - Lifetime
- 1999-07-22 JP JP2001512954A patent/JP4836377B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003505331A (ja) | 2003-02-12 |
| AU5223699A (en) | 2001-02-13 |
| CA2380145A1 (fr) | 2001-02-01 |
| JP4836377B2 (ja) | 2011-12-14 |
| DE69940563D1 (de) | 2009-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |