CA2543151C - Substrat de gan, methode de developpement de gan et methode de production du substrat de gan - Google Patents

Substrat de gan, methode de developpement de gan et methode de production du substrat de gan Download PDF

Info

Publication number: CA2543151C
Authority: CA; Canada
Prior art keywords: regions; gan; defect accumulating; single crystal; facets
Prior art date: 2001-10-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA002543151A

Other languages

English (en)

Other versions

CA2543151A1 (fr

Inventor

Kensaku Motoki

Ryu Hirota

Takuji Okahisa

Seiji Nakahata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-10-09

Filing date

2002-10-01

Publication date

2009-09-08

2002-09-17 Priority claimed from JP2002269387A external-priority patent/JP3801125B2/ja

2002-10-01 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

2002-10-01 Priority to CA002670071A priority Critical patent/CA2670071A1/fr

2003-04-09 Publication of CA2543151A1 publication Critical patent/CA2543151A1/fr

2009-09-08 Application granted granted Critical

2009-09-08 Publication of CA2543151C publication Critical patent/CA2543151C/fr

2022-10-01 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 493
238000000034 method Methods 0.000 title claims description 103
230000007547 defect Effects 0.000 claims abstract description 582
239000013078 crystal Substances 0.000 claims abstract description 559
239000000758 substrate Substances 0.000 abstract description 128
230000009471 action Effects 0.000 abstract description 2
229910002601 GaN Inorganic materials 0.000 description 412
239000011295 pitch Substances 0.000 description 69
229910052594 sapphire Inorganic materials 0.000 description 67
239000010980 sapphire Substances 0.000 description 67
235000012431 wafers Nutrition 0.000 description 63
239000010408 film Substances 0.000 description 60
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 44
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 43
229910001218 Gallium arsenide Inorganic materials 0.000 description 41
238000009825 accumulation Methods 0.000 description 31
239000007789 gas Substances 0.000 description 31
239000000463 material Substances 0.000 description 30
238000002248 hydride vapour-phase epitaxy Methods 0.000 description 23
238000002488 metal-organic chemical vapour deposition Methods 0.000 description 18
239000006185 dispersion Substances 0.000 description 17
UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 16
238000000429 assembly Methods 0.000 description 15
230000000712 assembly Effects 0.000 description 15
238000003776 cleavage reaction Methods 0.000 description 15
238000004519 manufacturing process Methods 0.000 description 15
238000005498 polishing Methods 0.000 description 15
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 15
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
230000014509 gene expression Effects 0.000 description 14
230000007017 scission Effects 0.000 description 14
230000007423 decrease Effects 0.000 description 13
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
229910052681 coesite Inorganic materials 0.000 description 12
229910052906 cristobalite Inorganic materials 0.000 description 12
229910052760 oxygen Inorganic materials 0.000 description 12
238000012545 processing Methods 0.000 description 12
229910052682 stishovite Inorganic materials 0.000 description 12
229910052905 tridymite Inorganic materials 0.000 description 12
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
125000004429 atom Chemical group 0.000 description 10
230000006870 function Effects 0.000 description 10
229910000069 nitrogen hydride Inorganic materials 0.000 description 10
229910052814 silicon oxide Inorganic materials 0.000 description 10
229910021529 ammonia Inorganic materials 0.000 description 9
239000002019 doping agent Substances 0.000 description 9
230000009467 reduction Effects 0.000 description 9
239000012808 vapor phase Substances 0.000 description 9
238000009792 diffusion process Methods 0.000 description 8
238000005530 etching Methods 0.000 description 8
238000000227 grinding Methods 0.000 description 8
229910052984 zinc sulfide Inorganic materials 0.000 description 8
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
230000008569 process Effects 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
229910052799 carbon Inorganic materials 0.000 description 6
238000000206 photolithography Methods 0.000 description 6
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
229910010271 silicon carbide Inorganic materials 0.000 description 6
230000008901 benefit Effects 0.000 description 5
238000011109 contamination Methods 0.000 description 5
235000015220 hamburgers Nutrition 0.000 description 5
229910052751 metal Inorganic materials 0.000 description 5
239000002184 metal Substances 0.000 description 5
230000000737 periodic effect Effects 0.000 description 5
239000007787 solid Substances 0.000 description 5
239000013598 vector Substances 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
208000012868 Overgrowth Diseases 0.000 description 4
229910052581 Si3N4 Inorganic materials 0.000 description 4
238000006243 chemical reaction Methods 0.000 description 4
239000012141 concentrate Substances 0.000 description 4
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
238000000151 deposition Methods 0.000 description 4
150000004767 nitrides Chemical class 0.000 description 4
238000005092 sublimation method Methods 0.000 description 4
RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
238000003491 array Methods 0.000 description 3
230000008033 biological extinction Effects 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
239000012159 carrier gas Substances 0.000 description 3
208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 3
238000009826 distribution Methods 0.000 description 3
230000004438 eyesight Effects 0.000 description 3
229910052733 gallium Inorganic materials 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
229910052739 hydrogen Inorganic materials 0.000 description 3
238000004020 luminiscence type Methods 0.000 description 3
125000004433 nitrogen atom Chemical group N* 0.000 description 3
230000002250 progressing effect Effects 0.000 description 3
230000002441 reversible effect Effects 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
238000010408 sweeping Methods 0.000 description 3
239000010409 thin film Substances 0.000 description 3
229910052727 yttrium Inorganic materials 0.000 description 3
241000579294 Piriqueta Species 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000005540 biological transmission Effects 0.000 description 2
125000004432 carbon atom Chemical group C* 0.000 description 2
230000000295 complement effect Effects 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
230000002349 favourable effect Effects 0.000 description 2
238000002073 fluorescence micrograph Methods 0.000 description 2
239000012212 insulator Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
229910003465 moissanite Inorganic materials 0.000 description 2
230000008450 motivation Effects 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
238000000059 patterning Methods 0.000 description 2
229910052697 platinum Inorganic materials 0.000 description 2
230000000630 rising effect Effects 0.000 description 2
WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
238000005308 sum rule Methods 0.000 description 2
230000002459 sustained effect Effects 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
238000001947 vapour-phase growth Methods 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910004541 SiN Inorganic materials 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
125000004122 cyclic group Chemical group 0.000 description 1
230000007850 degeneration Effects 0.000 description 1
230000001934 delay Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
239000010432 diamond Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
-1 e.g. Substances 0.000 description 1
239000012467 final product Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910021478 group 5 element Inorganic materials 0.000 description 1
238000001534 heteroepitaxy Methods 0.000 description 1
238000001657 homoepitaxy Methods 0.000 description 1
230000036039 immunity Effects 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000001976 improved effect Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000009545 invasion Effects 0.000 description 1
238000011835 investigation Methods 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
239000000155 melt Substances 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
230000002040 relaxant effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000011343 solid material Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000008093 supporting effect Effects 0.000 description 1
238000012360 testing method Methods 0.000 description 1
230000001052 transient effect Effects 0.000 description 1
230000032258 transport Effects 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000000927 vapour-phase epitaxy Methods 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Led Devices (AREA)

CA002543151A 2001-10-09 2002-10-01 Substrat de gan, methode de developpement de gan et methode de production du substrat de gan Expired - Fee Related CA2543151C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA002670071A CA2670071A1 (fr)	2001-10-09	2002-10-01	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP2001311018		2001-10-09
JP2001-311018		2001-10-09
JP2002269387A JP3801125B2 (ja)	2001-10-09	2002-09-17	単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
JP2002-269387		2002-09-17
CA002406347A CA2406347C (fr)	2001-10-09	2002-10-01	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002406347A Division CA2406347C (fr)	2001-10-09	2002-10-01	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002670071A Division CA2670071A1 (fr)	2001-10-09	2002-10-01	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan

Publications (2)

Publication Number	Publication Date
CA2543151A1 CA2543151A1 (fr)	2003-04-09
CA2543151C true CA2543151C (fr)	2009-09-08

Family

ID=36577311

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002543151A Expired - Fee Related CA2543151C (fr)	2001-10-09	2002-10-01	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan

Country Status (1)

Country	Link
CA (1)	CA2543151C (fr)

2002
- 2002-10-01 CA CA002543151A patent/CA2543151C/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CA2543151A1 (fr)	2003-04-09

Legal Events

Date	Code	Title	Description
2006-05-02	EEER	Examination request
2011-10-03	MKLA	Lapsed

Publication	Publication Date	Title
CA2406347C (fr)	2008-03-25	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan
US7473315B2 (en)	2009-01-06	AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate
US6468882B2 (en)	2002-10-22	Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
US7771532B2 (en)	2010-08-10	Nitride semiconductor substrate and method of producing same
CA2403310C (fr)	2007-07-10	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin
US20080006201A1 (en)	2008-01-10	Method of growing gallium nitride crystal
US8097528B2 (en)	2012-01-17	Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
US7354477B2 (en)	2008-04-08	Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
US20070280872A1 (en)	2007-12-06	Method of growing gallium nitride crystal and gallium nitride substrate
CA2543151C (fr)	2009-09-08	Substrat de gan, methode de developpement de gan et methode de production du substrat de gan
JP2009057276A (ja)	2009-03-19	単結晶窒化ガリウム基板
CA2543950C (fr)	2009-08-25	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin
JP4218687B2 (ja)	2009-02-04	単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法