CA3043564C - Procede de formation d'une couche d'alumine a la surface d'un substrat metallique - Google Patents

Procede de formation d'une couche d'alumine a la surface d'un substrat metallique

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Publication number
CA3043564C
CA3043564C CA3043564A CA3043564A CA3043564C CA 3043564 C CA3043564 C CA 3043564C CA 3043564 A CA3043564 A CA 3043564A CA 3043564 A CA3043564 A CA 3043564A CA 3043564 C CA3043564 C CA 3043564C
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Prior art keywords
layer
aluminum
metallic substrate
substrate
halogen
Prior art date
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CA3043564A
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English (en)
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CA3043564A1 (fr
Inventor
Marjorie Christine CAVARROC
Stephane KNITTEL
Florence BERGERON
Ludvik Martinu
Jolenta SAPIEHA
Simon LOQUAI
Original Assignee
Safran SA
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Publication date
Application filed by Safran SA filed Critical Safran SA
Priority to CA3043564A priority Critical patent/CA3043564C/fr
Priority to US17/610,975 priority patent/US12492463B2/en
Priority to EP20732998.8A priority patent/EP4025719A1/fr
Priority to PCT/FR2020/050708 priority patent/WO2020229747A1/fr
Priority to CN202080036200.6A priority patent/CN113825857B/zh
Publication of CA3043564A1 publication Critical patent/CA3043564A1/fr
Application granted granted Critical
Publication of CA3043564C publication Critical patent/CA3043564C/fr
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0057Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/024Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025Metallic sublayers
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694Halides
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/5806Thermal treatment
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • C23C14/5853Oxidation
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/403Oxides of aluminium, magnesium or beryllium
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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Abstract

L'invention concerne un procédé de formation d'une couche d'alumine (203) à la surface d'un substrat métallique (201) en alliage comprenant de l'aluminium, le procédé comprenant au moins : - le dépôt d'une première couche d'aluminium sur une surface du substrat métallique, - le dépôt d'une deuxième couche par dépôt en phase vapeur sur la première couche, la deuxième couche comprenant de l'aluminium, un halogène et de l'oxygène, et - le traitement thermique du substrat revêtu des première et deuxième couches sous atmosphère oxydante afin de former la couche d'alumine à la surface du substrat métallique.

Description

1 Description Titre de ('invention : Procede de formation d'une couche d'alumine a la surface d'un substrat metallique Domaine Technique La presente invention concerne un procede de formation d'une couche d'alumine a la surface d'un substrat metallique de sorte a conferer audit substrat une protection contre I'oxydation et la corrosion a haute temperature. L'invention concerne notamment la protection d'un substrat destine a etre utilise dans une turbomachine aeronautique.
Technique anterieure L'emploi de superalliages a base de nickel dans les turbomachines aeronautiques est connu. Dans I'optique de reduire Ie poids des turbomachines, des alliages comprenant des metaux moins lourds tels que l'aluminium ont ete developpes. A titre d'exemple, on peut citer les alliages a base d'aluminure de titane (aussi appeles alliages TiAI) qui presentent de bonnes caracteristiques mecaniques et qui sont significativement plus legers que les superalliages a base de nickel.
II est toutefois souhaitable d'ameliorer la resistance de ces alliages a I'oxydation et a la corrosion a haute temperature, c'est-a-dire a des temperatures superieures a 800°C. Des solutions pour former une couche d'alumine protectrice a la surface de ce type d'alliages ont ete developpees. En particulier, la publication Hornauer et al. (Surface and Coatings Technology, 2003, 174, pp.1182-1186) a propose une solution dans laquelle il y a d'abord implantation de chlore par un procede plasma a la surface de la piece puis dans laquelle la couche d'alumine protectrice est formee.
Cette solution presente toutefois I'inconvenient de conduire localement, pres de la surface de la piece, a un appauvrissement en aluminium lors de la formation de la couche d'alumine. Cet appauvrissement en aluminium peut resulter en une alteration indesirable des proprietes du substrat a haute temperature, notamment du fait de la formation de phases intermetalliques fragiles qui diminuent la duree de vie en fatigue du materiau.5 2 Expose de ('invention La presente invention concerne un procede de formation d'une couche d'alumine a la surface d'un substrat metallique en alliage comprenant de l'aluminium, Ie procede comprenant au moins : - Ie depot d'une premiere couche d'aluminium sur une surface du substrat metallique, - Ie depot d'une deuxieme couche par depot en phase vapeur sur la premiere couche, la deuxieme couche comprenant de l'aluminium, un halogene et de I'oxygene, et - Ie traitement thermique du substrat revetu des premiere et deuxieme couches sous atmosphere oxydante afin de former la couche d'alumine a la surface du substrat metallique.
L'invention propose une solution dans laquelle une couche intermediaire d'aluminium (premiere couche) est deposee sur Ie substrat avant depot de la deuxieme couche comprenant l'aluminium, I'halogene et de I'oxygene. Cette premiere couche apporte l'aluminium pour former la couche d'alumine lors du traitement thermique en atmosphere oxydante. Du fait de cet apport, Ie phenomene d'appauvrissement local en aluminium du substrat metallique sous-jacent rencontre dans l'art anterieur est reduit, voire elimine.
Dans un exemple de realisation, I'epaisseur de la premiere couche est superieure ou egale a 20 nm.
Une telle valeur d'epaisseur permet avantageusement de reduire davantage encore Ie phenomene d'appauvrissement en aluminium du substrat sous-jacent lors de la formation de la couche d'alumine.
Dans un exemple de realisation, I'epaisseur de la premiere couche est inferieure ou egale a 1000 nm, par exemple a 500 nm.
Le fait de limiter I'epaisseur de la premiere couche permet d'eviter tout risque que l'aluminium ne diffuse depuis la premiere couche vers le substrat sous-jacent et y induise une modification structurelle.
En particulier, I'epaisseur de la premiere couche peut etre comprise entre 20 nm et 1000 nm, par exemple entre 20 nm et 500 nm.5 3 Dans un exemple de realisation, la deuxieme couche est deposee par un procede choisi parmi Ie depot physique en phase vapeur, Ie depot chimique en phase vapeur, Ie depot chimique en phase vapeur assiste par plasma et la cementation en caisse.
La deuxieme couche comprend un compose de formule AIOnXm dans laquelle n et m sont chacun strictement positifs et X represente I'halogene.
En particulier, la deuxieme couche peut comprendre un melange d'halogenure d'aluminium et d'oxyhalogenure d'aluminium, eventuellement avec de I'alumine.
Dans un exemple de realisation, I'halogene est Ie fluor. Dans ce dernier cas, la deuxieme couche peut comprendre un compose de formule AIOnFm dans laquelle n et m sont chacun strictement positifs. En particulier, la deuxieme couche peut comprendre un melange de fluorure d'aluminium et d'oxyfluorure d'aluminium, eventuellement avec de I'alumine. En variante, I'halogene est Ie chlore.
Dans un exemple de realisation, I'epaisseur de la deuxieme couche est superieure ou egale a 10 pm, de preference comprise entre 10 pm et 50 pm. Une telle epaisseur permet de favoriser la croissance de la couche d'alumine d'une part, et de minimiser les contraintes internes dans la couche d'autre part, ce qui permet a la couche d'eviter tout risque de defaut d'adhesion sur Ie substrat.
Dans un exemple de realisation, la deuxieme couche est deposee a partir d'une phase vapeur comprenant un gaz halogene, de I'oxygene et de l'aluminium.
Par exemple, la deuxieme couche est deposee a partir d'une phase vapeur comprenant du fluor, de I'oxygene et de l'aluminium. Lorsque I'halogene est du fluor, la phase vapeur peut comporter du CF4, du CzF6, du SiF4 du SFe ou un melange de ces composes, ainsi que de I'oxygene et de l'aluminium.
En variante, la deuxieme couche est deposee a partir d'une phase vapeur comprenant du chlore, de I'oxygene et de l'aluminium. Lorsque I'halogene est du chlore, la phase vapeur peut comporter du SiCI4, du CI2 ou un melange de ces composes, ainsi que de I'oxygene et de l'aluminium.
Dans un exemple de realisation, la deuxieme couche est deposee par pulverisation d'une cible comprenant de l'aluminium dans une atmosphere comprenant de I'oxygene et Ie gaz halogene.
Dans un exemple de realisation, Ie traitement thermique est realise a une temperature superieure ou egale a 800 °C.5 4 Dans un exemple de realisation, Ie substrat metallique est en alliage a base d'aluminure de titane.
Dans un exemple de realisation, Ie substrat metallique est une piece de turbomachine, par exemple une piece de turbomachine aeronautique.
Selon un autre de ses aspects, I'invention concerne egalement un substrat metallique revetu comprenant : - un substrat metallique en alliage comprenant de l'aluminium, - une premiere couche d'aluminium sur une surface du substrat metallique, et - une deuxieme couche comprenant de l'aluminium, un halogene et de I'oxygene, la deuxieme couche recouvrant la premiere couche.
Le substrat metallique revetu introduit ci-dessus correspond au produit intermediate obtenu lors de la mise en ceuvre du procede decrit plus haut avant le traitement thermique en atmosphere oxydante.
Dans un exemple de realisation, la premiere couche a une epaisseur superieure ou egale a 20 nm. L'epaisseur de la premiere couche peut etre inferieure ou egale a 1000 nm, par exemple a 500 nm. En particulier, l'epaisseur de la premiere couche peut etre comprise entre 20 nm et 1000 nm, par exemple entre 20 nm et 500 nm.
Dans un mode de realisation, I'halogene de la deuxieme couche est le fluor.
En particulier, la deuxieme couche peut comprendre un compose de formule AIOnFm dans laquelle n et m sont chacun strictement positifs. En particulier, la deuxieme couche peut comprendre un melange de fluorure d'aluminium et d'oxyfluorure d'aluminium, eventuellement avec de l'alumine.
Description des figures [Fig. 1] La figure 1 illustre le substrat recouvert de la premiere couche d'aluminium apres mise en ceuvre d'une premiere etape d'un exemple de procede selon I'invention. [Fig. 2] La figure 2 illustre le substrat recouvert des premiere et deuxieme couches apres mise en ceuvre d'une deuxieme etape d'un exemple de procede selon I'invention. [Fig. 3] La figure 3 illustre le substrat recouvert d'une couche d'alumine de surface obtenue apres traitement thermique sous atmosphere oxydante.5 [Fig. 4] La figure 4 decrit de maniere schematique un dispositif pour Ie depot en phase vapeur de couches sur un substrat pouvant etre mis en oeuvre dans Ie cadre de I'invention. [Fig. 5] La figure 5 represente une photographic obtenue par microscopic electronique a balayage du resultat obtenu apres mise en oeuvre d'un procede selon I'invention. [Fig. 6] La figure 6 represente une photographic obtenue par microscopic electronique a balayage du resultat obtenu apres mise en oeuvre d'un procede hors invention dans lequel la premiere couche d'aluminium n'est pas deposee.
Description des modes de realisation La presente invention concerne Ie revetement d'un substrat metallique 11 en alliage comprenant de l'aluminium. Le substrat traite peut etre un alliage a base d'aluminure de titane, comme un alliage gamma-TiAI.
Le substrat traite peut constituer une piece de turbomachine, et par exemple une piece de turbomachine aeronautique. Le substrat est destine a etre utilise en atmosphere oxydante et a une temperature superieure ou egale a 800°C. Le substrat peut par exemple etre une piece de turbine. II peut par exemple s'agir d'une aube de turbine ou d'un secteur d'anneau de turbine.
La premiere couche d'aluminium 12 est tout d'abord deposee sur une surface externe S du substrat. La premiere couche 12 peut etre deposee au contact de la surface externe S du substrat. La premiere couche 12 formee d'aluminium elementaire (Al) peut etre deposee par mise en oeuvre d'une technique connue en soi. En particulier, elle peut etre deposee par depot physique en phase vapeur, par exemple par evaporation sous vide ou par pulverisation. La premiere couche d'aluminium 12 peut etre deposee par d'autres methodes de depot comme par exemple un depot electrochimique, un depot chimique en phase vapeur (CVD pour l'acronyme anglais Chemical Vapor Deposition), un depot chimique en phase vapeur assiste par plasma (PECVD pour l'acronyme anglais Plasma Enhanced Chemical Vapor Deposition) ou encore par cementation en caisse. La temperature imposee lors du depot de la premiere couche 12 peut etre comprise entre 20°C et 600°C, par exemple entre 20°C et 400°C.5 6 Dans un exemple de realisation, la premiere couche d'aluminium 12 peut etre deposee par pulverisation radiofrequence magnetron, par exemple de puissance egale a 200 W, sous une pression reduite, par exemple a 0,66 bar, en utilisant un debit d'argon, par exemple de 60 centimetres cube standards par minute, et en temperature, par exemple a 400 °C.
La premiere couche 12 peut avoir une epaisseur ei comprise entre 20 nm et 1000 nm.
Le substrat metallique 11 recouvert de la premiere couche 12 est illustre a la figure 1.
On forme ensuite la deuxieme couche 13 comprenant de I'aluminium, un halogene et de I'oxygene sur la premiere couche 12. La deuxieme couche 13 peut etre deposee au contact de la premiere couche 12. La premiere couche 12 est intercalee entre le substrat 11 et la deuxieme couche 13. Cette deuxieme couche 13 est formee par depot en phase vapeur.
Comme indique plus haut, la deuxieme couche 13 comprend un compose de formule AIOnXm dans laquelle n et m sont chacun strictement positifs et X represente I'halogene. La deuxieme couche 13 peut comprendre un melange d'halogenure d'aluminium et d'oxyhalogenure d'aluminium, eventuellement avec de l'alumine.
L'halogene peut etre le fluor ou le chlore comme indique plus haut.
La deuxieme couche 13 peut comprendre en pourcentages atomiques : - 3% a 70% d'halogene, par exemple de 55% a 65% d'halogene, - de 5% a 40% d'aluminium, par exemple de 10% a 30% d'aluminium, et - del% a 20% d'oxygene, par exemple de 3% a 15% d'oxygene.
La deuxieme couche 13 peut presenter un rapport atomique entre I'halogene et I'oxygene compris entre 2:1 et 8:1.
Les inventeurs ont constate que I'halogene est un activateur de la reaction de formation de l'alumine par oxydation de I'aluminium present avec I'oxygene.
La deuxieme couche 13 est realisee par depot en phase vapeur, et en particulier par pulverisation cathodique magnetron. La temperature imposee lors du depot de la deuxieme couche 13 peut etre comprise entre 20°C et 800°C, par exemple entre 20°C et 400°C.5 7 La figure 4 represente schematiquement un dispositif permettant de realiser un depot par pulverisation cathodique magnetron.
Dans une chambre 101, un gaz est introduit par I'entree 106 et un plasma est genere entre la cible 105 et Ie substrat 111 a recouvrir. Sous I'effet d'un champ electrique, obtenu en imposant une tension entre la cible 105 et Ie substrat 111, des electrons sont generes par la cible et peuvent ioniser par collision les atomes constitutifs du plasma. La presence d'un champ magnetique genere par un aimant 104 dispose a proximite de la cible 105 confine les electrons generes a proximite de la cible et augmente la probabilite que la collision entre un electron et un atome du plasma y ait lieu. Lorsqu'une telle collision a lieu, une espece de haute energie est generee, et cette derniere peut venir bombarder la cible 105 et arracher, par choc elastique, des particules de la cible 105. Les particules de la cible 105 ainsi arrachees peuvent alors se deposer sur Ie substrat 111 pour former Ie depot.
Le depot de la deuxieme couche 13 peut etre realise sous vide, par exemple a une pression inferieure ou egale a 10 Pa (75 mTorr), par exemple comprise entre 0,67 Pa (5 mTorr) et 10 Pa (75 mTorr). Durant le depot, on peut imposer : - un debit d'oxygene injecte dans la chambre 101 compris entre 1 cm3 standard par minute (seem) et 100 cm3 standards par minute, et - un debit de gaz halogene dans la chambre 101 compris entre 2,5 cm3 standards par minute et 100 cm3 standards par minute, - et optionnellement, un debit de gaz inerte injecte dans la chambre 101 compris entre 1cm3 standard par minute et 100 cm3 standards par minute.
Le gaz inerte peut par exemple etre l'argon.
Dans le cas ou I'halogene est le fluor, le gaz halogene peut etre choisi parmi le CF4, du C2F6, du SiF4 du SFe ou un melange de ces composes.
Dans le cas ou I'halogene est le chlore, le gaz halogene peut etre choisi parmi le SiCk, du CI2 ou un melange de ces composes.
La deuxieme couche 13 peut avoir une epaisseur 62 superieure ou egale a 0,1 pm, par exemple a 10 pm, par exemple comprise entre 10 pm et 100 pm.
La figure 2 represente un substrat 11 recouvert d'une premiere couche d'aluminium 12 et d'une deuxieme couche 13 telles que decrites ci-dessus.5 8 On realise ensuite un traitement thermique dans une atmosphere oxydante de sorte a former la couche d'alumine 14 a la surface S du substrat metallique.
Le traitement thermique peut etre realise a une temperature superieure ou egale a 800°C, par exemple comprise entre 800°C et 1000°C, par exemple comprise entre 850°C et 900°C.
Le traitement thermique peut etre realise sous air. Le traitement thermique peut etre un recuit.
Comme decrit ci-dessus, du fait de la presence de la couche d'aluminium 12, la croissance de la couche d'alumine 14 au cours du traitement thermique se fait en limitant voire en supprimant l'appauvrissement en aluminium a proximite de la surface S du substrat.
A la fin du traitement thermique, et comme figure schematiquement en figure 3, une couche d'alumine 14 est farmee a la surface S du substrat metallique 11.
Le traitement thermique peut egalement mener a la formation sur la couche d'alumine 14, d'une couche 15 comprenant du titane, de l'aluminium et de I'oxygene.
Dans un exemple de realisation, la couche d'alumine 14 presente une epaisseur e3 comprise entre 10 nm et 50000 nm.
La figure 5 est une photographie d'un substrat de gamma-TiAI 201 revetu par la mise en oeuvre d'un procede tel que decrit ci-dessus. Le substrat 201 est recouvert d'une couche d'alumine 203 et presentant a sa surface une couche 204 comprenant du titane, de l'aluminium et de I'oxygene.
A titre de comparaison, la figure 6 est une photographie d'un substrat de gammaTiAI 301 revetu d'une couche d'alumine 303 par un procede hors invention, ne comprenant pas le depot initial de la couche d'aluminium. Ce substrat presente egalement a sa surface une couche 304 comprenant du titane, de l'aluminium et de I'oxygene.
On peut observer que la mise en oeuvre du procede decrit ci-dessus permet de reduire significativement la zone appauvrie en aluminium (202 a la figure 5 et 302 a la figure 6) presente a la surface du substrat lors du revetement d'un substrat metallique.9 Dans les exemples presentes en figures 5 et 6, on observe en effet que la zone appauvrie en aluminium a proximite de la surface revetue du substrat fait 2 pm d'epaisseur lorsque la couche d'alumine est preparee par un procede de I'invention (zone 202 figure 5), contre 4 pm lorsque la couche d'alumine est preparee par un 5 procede hors invention (zone 302 figure 6).
Dans la presente demande, I'expression « compris(e) entre ... et ... » doit s'entendre bornes incluses sauf mention explicite du contraire.

Claims

Revendications [Revendication 1] Procede de formation d'une couche d'alumine (14) a la surface d'un substrat metallique (11) en alliage comprenant de l'aluminium, Ie procede comprenant au moins : - Ie depot d'une premiere couche d'aluminium (12) sur une surface du substrat metallique, - Ie depot d'une deuxieme couche (13) par depot en phase vapeur sur la premiere couche, la deuxieme couche comprenant de l'aluminium, un halogene et de I'oxygene, et - Ie traitement thermique du substrat revetu des premiere et deuxieme couches sous atmosphere oxydante afin de former la couche d'alumine a la surface du substrat metallique. [Revendication 2] Procede selon la revendication 1, dans lequel I'epaisseur ei de la premiere couche d'aluminium (12) est comprise entre 20 nm et 1000 nm. [Revendication 3] Procede selon I'une des revendications 1 ou 2, dans lequel I'halogene est Ie fluor. [Revendication 4] Procede selon I'une quelconque des revendications 1 a 3, dans lequel la deuxieme couche est deposee par un procede choisi parmi Ie depot physique en phase vapeur, Ie depot chimique en phase vapeur, Ie depot chimique en phase vapeur assiste par plasma et la cementation en caisse. [Revendication 5] Procede selon I'une quelconque des revendications 1 a 4, dans lequel I'epaisseur de la deuxieme couche (13) est superieure ou egale a 10 pm. [Revendication 6] Procede selon I'une quelconque des revendications 1 a 5, dans lequel la deuxieme couche (13) est deposee a partir d'une phase gazeuse comprenant de I'oxygene, un gaz halogene et de l'aluminium. [Revendication 7] Procede selon la revendication 6, dans lequel la deuxieme couche (13) est deposee par pulverisation d'une cible (105) comprenant de CA 3043564 2019-05-1511 l'aluminium dans une atmosphere comprenant de I'oxygene et Ie gaz halogene. [Revendication 8] Procede selon I'une quelconque des revendications 1 a 7, dans lequel Ie traitement thermique est realise a une temperature superieure ou egale a 800°C. [Revendication 9] Procede selon I'une quelconque des revendications 1 a 8, dans lequel Ie substrat metallique (11) est en alliage a base d'aluminure de titane. [Revendication 10] Procede selon I'une quelconque des revendications 1 a 9, dans lequel Ie substrat metallique (11) est une piece de turbomachine. [Revendication 11] Substrat metallique revetu comprenant : - un substrat metallique (11) en alliage comprenant de l'aluminium, - une premiere couche (12) d'aluminium sur une surface du substrat metallique, et - une deuxieme couche (13) comprenant de l'aluminium, un halogene et de I'oxygene, la deuxieme couche recouvrant la premiere couche. [Revendication 12] Substrat metallique selon la revendication 11, dans lequel la premiere couche (12) a une epaisseur ei comprise entre 20 nm et 1000 nm. [Revendication 13] Substrat metallique selon I'une quelconque des revendications 11 ou 12, dans lequel la deuxieme couche (13) comprend un compose de formule AIOnFm dans laquelle n et m sont chacun strictement positifs.
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CA3043564A CA3043564C (fr) 2019-05-15 2019-05-15 Procede de formation d'une couche d'alumine a la surface d'un substrat metallique
US17/610,975 US12492463B2 (en) 2019-05-15 2020-04-24 Method for forming a layer of alumina at the surface of a metallic substrate
EP20732998.8A EP4025719A1 (fr) 2019-05-15 2020-04-24 Procédé de formation d'une couche d'alumine à la surface d'un substrat métallique
PCT/FR2020/050708 WO2020229747A1 (fr) 2019-05-15 2020-04-24 Procédé de formation d'une couche d'alumine à la surface d'un substrat métallique
CN202080036200.6A CN113825857B (zh) 2019-05-15 2020-04-24 在金属基材表面形成氧化铝层的方法

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US20220259717A1 (en) 2022-08-18
CN113825857A (zh) 2021-12-21
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WO2020229747A1 (fr) 2020-11-19
CN113825857B (zh) 2024-03-19

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