CA3083227A1 - Circuit de pixels a obturateur global et procede pour des applications de vision artificielle - Google Patents

Circuit de pixels a obturateur global et procede pour des applications de vision artificielle Download PDF

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Publication number
CA3083227A1
CA3083227A1 CA3083227A CA3083227A CA3083227A1 CA 3083227 A1 CA3083227 A1 CA 3083227A1 CA 3083227 A CA3083227 A CA 3083227A CA 3083227 A CA3083227 A CA 3083227A CA 3083227 A1 CA3083227 A1 CA 3083227A1
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Canada
Prior art keywords
photodiode
storage diode
photodiodes
adjacent
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CA3083227A
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English (en)
Inventor
Erez Tadmor
David Cohen
Giora Yahav
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Magic Leap Inc
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Magic Leap Inc
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Publication date
Application filed by Magic Leap Inc filed Critical Magic Leap Inc
Publication of CA3083227A1 publication Critical patent/CA3083227A1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S11/00—Systems for determining distance or velocity not using reflection or reradiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Un dispositif de capteur d'image comprend une pluralité de cellules de pixels agencées dans un réseau de pixels, un circuit de commande pour commander une phase d'exposition et une phase d'échantillonnage du dispositif de capteur d'image. Chaque cellule de la pluralité de cellules de pixels comprend une photodiode, une diode de stockage et une région de diffusion flottante. Le circuit de commande est conçu pour activer la photodiode dans une pluralité de fenêtres temporelles afin de détecter la lumière réfléchie par une cible à la suite d'une pluralité correspondante d'impulsions lumineuses émises, avec un temps de retard prédéterminé entre chaque fenêtre temporelle et une impulsion lumineuse émise correspondante. La photodiode peut être activée à l'aide d'une pluralité d'impulsions de tension de polarisation ou d'une pluralité d'impulsions de signal d'obturateur global.
CA3083227A 2017-12-13 2018-12-13 Circuit de pixels a obturateur global et procede pour des applications de vision artificielle Pending CA3083227A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762598390P 2017-12-13 2017-12-13
US62/598,390 2017-12-13
PCT/US2018/065556 WO2019118786A1 (fr) 2017-12-13 2018-12-13 Circuit de pixels à obturateur global et procédé pour des applications de vision artificielle

Publications (1)

Publication Number Publication Date
CA3083227A1 true CA3083227A1 (fr) 2019-06-20

Family

ID=66696356

Family Applications (1)

Application Number Title Priority Date Filing Date
CA3083227A Pending CA3083227A1 (fr) 2017-12-13 2018-12-13 Circuit de pixels a obturateur global et procede pour des applications de vision artificielle

Country Status (9)

Country Link
US (4) US10804301B2 (fr)
EP (2) EP4095913B1 (fr)
JP (1) JP7308830B2 (fr)
KR (1) KR102700625B1 (fr)
CN (1) CN111466029B (fr)
AU (1) AU2018386190A1 (fr)
CA (1) CA3083227A1 (fr)
IL (2) IL308768A (fr)
WO (1) WO2019118786A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11444109B2 (en) 2017-12-13 2022-09-13 Magic Leap, Inc. Global shutter pixel circuit and method for computer vision applications
EP4273576A4 (fr) * 2020-12-31 2025-02-26 Wuhan Juxin Micro-Electronics Co., Ltd. Unité de détection à utiliser dans un capteur d'image temps de vol et son procédé de démodulation

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3065320B1 (fr) * 2017-04-18 2020-02-07 Stmicroelectronics (Crolles 2) Sas Pixel de detection de temps de vol
CN111837144B (zh) 2018-03-13 2024-07-26 奇跃公司 使用机器学习的增强图像深度感测
US10598936B1 (en) * 2018-04-23 2020-03-24 Facebook Technologies, Llc Multi-mode active pixel sensor
US10917596B2 (en) 2018-08-29 2021-02-09 Himax Imaging Limited Pixel circuit for generating output signals in response to incident radiation
US10791286B2 (en) 2018-12-13 2020-09-29 Facebook Technologies, Llc Differentiated imaging using camera assembly with augmented pixels
US10855896B1 (en) * 2018-12-13 2020-12-01 Facebook Technologies, Llc Depth determination using time-of-flight and camera assembly with augmented pixels
US10791282B2 (en) 2018-12-13 2020-09-29 Fenwick & West LLP High dynamic range camera assembly with augmented pixels
EP3914997A4 (fr) 2019-01-25 2022-10-12 Magic Leap, Inc. Oculométrie à l'aide d'images ayant différents temps d'exposition
US11448739B2 (en) * 2019-03-08 2022-09-20 Synaptics Incorporated Derivation of depth information from time-of-flight (TOF) sensor data
JP7329963B2 (ja) * 2019-05-17 2023-08-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
EP3973347B1 (fr) 2019-05-20 2025-03-26 Magic Leap, Inc. Systèmes et techniques pour estimer la pose d'un oeil
WO2021030034A1 (fr) 2019-08-15 2021-02-18 Apple Inc. Cartographie de profondeur à l'aide d'un multiplexage spatial de phase d'éclairage
US11438486B2 (en) * 2019-08-26 2022-09-06 Qualcomm Incorporated 3D active depth sensing with laser pulse train bursts and a gated sensor
US12439732B1 (en) * 2019-09-25 2025-10-07 Gigajot Technology, Inc. Time-of-flight pixel sensor with high modulation contrast
US10902623B1 (en) 2019-11-19 2021-01-26 Facebook Technologies, Llc Three-dimensional imaging with spatial and temporal coding for depth camera assembly
US20210156881A1 (en) * 2019-11-26 2021-05-27 Faro Technologies, Inc. Dynamic machine vision sensor (dmvs) that performs integrated 3d tracking
US11079515B2 (en) * 2019-12-18 2021-08-03 Microsoft Technology Licensing, Llc Micro lens time-of-flight sensor having micro lens heights that vary based on image height
KR20210083983A (ko) * 2019-12-27 2021-07-07 에스케이하이닉스 주식회사 이미지 센싱 장치
US11194160B1 (en) 2020-01-21 2021-12-07 Facebook Technologies, Llc High frame rate reconstruction with N-tap camera sensor
KR102890989B1 (ko) * 2020-03-10 2025-11-25 에스케이하이닉스 주식회사 이미지 센서 및 이를 포함하는 촬영 장치
US11763472B1 (en) 2020-04-02 2023-09-19 Apple Inc. Depth mapping with MPI mitigation using reference illumination pattern
US11743616B2 (en) 2020-04-27 2023-08-29 Semiconductor Components Industries, Llc Imaging system with time-of-flight sensing
US12123952B2 (en) 2020-04-27 2024-10-22 Semiconductor Components Industries, Llc Imaging system with time-of-flight sensing
US11825228B2 (en) * 2020-05-20 2023-11-21 Meta Platforms Technologies, Llc Programmable pixel array having multiple power domains
CN111601053B (zh) * 2020-05-20 2021-07-27 上海炬佑智能科技有限公司 一种图像传感器、全局快门控制方法及计算机存储介质
WO2021252153A1 (fr) * 2020-06-11 2021-12-16 Apple Inc. Capteur d'image à obturateur global à capacité de détection de temps de vol
CN111885316B (zh) * 2020-07-09 2022-07-29 深圳奥辰光电科技有限公司 一种图像传感器像素电路、图像传感器及深度相机
KR102817675B1 (ko) 2020-07-15 2025-06-09 매직 립, 인코포레이티드 비구면 각막 모델을 사용한 눈 추적
WO2022099594A1 (fr) * 2020-11-13 2022-05-19 深圳市汇顶科技股份有限公司 Circuit de mesure de temps de vol, système, procédé et dispositif électronique
US11509848B2 (en) * 2021-01-11 2022-11-22 Microsoft Technology Licensing, Llc Photodiode assembly
DE102021000508A1 (de) * 2021-02-02 2022-08-04 Daimler Truck AG Verfahren zum Kalibrieren einer Gated-Kamera, Steuereinrichtung zur Durchführung eines solchen Verfahrens, Kalibrierungsvorrichtung mit einer solchen Steuereinnchtung und Kraftfahrzeug mit einer solchen Kalibrierungsvorrichtung
FR3121231B1 (fr) * 2021-03-29 2023-05-19 St Microelectronics Crolles 2 Sas Capteur iTOF
CN115225834A (zh) 2021-04-21 2022-10-21 三星电子株式会社 用于改变合并模式的深度传感器和图像信号处理器
CN113271419B (zh) * 2021-05-20 2023-05-09 上海韦尔半导体股份有限公司 低pls全局快门像素结构及其驱动时序控制方法
CN113219476B (zh) * 2021-07-08 2021-09-28 武汉市聚芯微电子有限责任公司 测距方法、终端及存储介质
US12007510B2 (en) * 2021-10-05 2024-06-11 Lg Innotek Co., Ltd. System and method for differential comparator-based time-of-flight measurement with amplitude estimation
CN114879167A (zh) * 2022-05-07 2022-08-09 四川创安微电子有限公司 一种像素电路、光电信号采集方法及系统和测距传感器
CN117221686B (zh) * 2022-05-30 2025-03-18 华为技术有限公司 一种图像传感器的像素和图像传感器
US12270948B2 (en) * 2022-08-05 2025-04-08 Meta Platforms Technologies, Llc Source-camera assembly with light path for a reference pixel
US20240085561A1 (en) * 2022-09-08 2024-03-14 Samsung Electronics Co., Ltd. Image sensor for distance measurement and camera module including the same
CN115619880A (zh) * 2022-09-30 2023-01-17 青岛海信移动通信技术股份有限公司 一种终端设备、数据存储方法和存储介质
US12452553B2 (en) 2024-03-14 2025-10-21 Semiconductor Components Industries, Llc Time gated pixel with HDR capability
US12532089B2 (en) * 2024-06-27 2026-01-20 Semiconductor Components Industries, Llc Global shutter image sensor with parasitic light leakage correction

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844398A1 (fr) 2002-09-11 2004-03-12 St Microelectronics Sa Photodetecteur d'un capteur d'images
JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
KR100649861B1 (ko) * 2005-12-22 2006-11-27 매그나칩 반도체 유한회사 이미지 센서 제조방법
US8289427B2 (en) 2006-11-30 2012-10-16 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
KR101467509B1 (ko) 2008-07-25 2014-12-01 삼성전자주식회사 이미지 센서 및 이미지 센서 동작 방법
US8089036B2 (en) 2009-04-30 2012-01-03 Omnivision Technologies, Inc. Image sensor with global shutter and in pixel storage transistor
KR101605046B1 (ko) 2009-07-29 2016-03-21 삼성전자주식회사 싱글 게이트 픽셀 및 싱글 게이트 픽셀 동작 방법
JP5740413B2 (ja) * 2010-01-06 2015-06-24 メサ・イメージング・アー・ゲーＭｅｓａ Ｉｍａｇｉｎｇ Ａｇ ピクセルアレイと記憶アレイを別個に備える復調センサ
EP2395369A1 (fr) 2010-06-09 2011-12-14 Thomson Licensing Imageur de temps de vol
US8642938B2 (en) * 2012-01-13 2014-02-04 Omnivision Technologies, Inc. Shared time of flight pixel
KR102286111B1 (ko) 2014-08-21 2021-08-04 삼성전자주식회사 단위 픽셀, 상기 단위 픽셀을 포함하는 이미지 센서, 및 상기 단위 픽셀을 포함하는 이미지 처리 시스템
US9826214B2 (en) 2014-09-08 2017-11-21 Microsoft Technology Licensing, Llc. Variable resolution pixel
US9437633B2 (en) * 2014-11-06 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor
US9461088B2 (en) * 2014-12-01 2016-10-04 Omnivision Technologies, Inc. Image sensor pixel with multiple storage nodes
US9871065B2 (en) * 2014-12-22 2018-01-16 Google Inc. RGBZ pixel unit cell with first and second Z transfer gates
KR102363433B1 (ko) 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
KR102327846B1 (ko) * 2015-06-19 2021-11-18 삼성전자주식회사 빛 샘 방지를 위한 촬영 장치 및 그 촬영 장치의 이미지 센서
EP3333893B1 (fr) 2015-08-04 2020-02-19 Panasonic Intellectual Property Management Co., Ltd. Dispositif d'imagerie à semi-conducteurs
JP6799538B2 (ja) 2015-08-04 2020-12-16 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置の駆動方法
US10762651B2 (en) 2016-09-30 2020-09-01 Magic Leap, Inc. Real time calibration for time-of-flight depth measurement
KR102570346B1 (ko) 2016-10-20 2023-08-25 에스케이하이닉스 주식회사 쉴드들을 가진 이미지 센서 및 그 제조 방법
FR3060250B1 (fr) * 2016-12-12 2019-08-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'image pour capter une image en 2d et une profondeur
US10616519B2 (en) * 2016-12-20 2020-04-07 Microsoft Technology Licensing, Llc Global shutter pixel structures with shared transfer gates
CN108700664A (zh) * 2017-02-06 2018-10-23 松下知识产权经营株式会社 三维运动取得装置及三维运动取得方法
FR3065320B1 (fr) * 2017-04-18 2020-02-07 Stmicroelectronics (Crolles 2) Sas Pixel de detection de temps de vol
US10397554B2 (en) * 2017-05-16 2019-08-27 Samsung Electronics Co., Ltd. Time-resolving sensor using shared PPD+SPAD pixel and spatial-temporal correlation for range measurement
AU2018386190A1 (en) 2017-12-13 2020-06-04 Magic Leap, Inc. Global shutter pixel circuit and method for computer vision applications
US11368643B2 (en) * 2018-02-01 2022-06-21 Suteng Innovation Technology Co., Ltd. Pulsed time-of-flight sensor, pulsed time-of-flight pixel array and operation method therefor
CN111837144B (zh) * 2018-03-13 2024-07-26 奇跃公司 使用机器学习的增强图像深度感测

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11444109B2 (en) 2017-12-13 2022-09-13 Magic Leap, Inc. Global shutter pixel circuit and method for computer vision applications
US11894400B2 (en) 2017-12-13 2024-02-06 Magic Leap, Inc. Global shutter pixel circuit and method for computer vision applications
EP4273576A4 (fr) * 2020-12-31 2025-02-26 Wuhan Juxin Micro-Electronics Co., Ltd. Unité de détection à utiliser dans un capteur d'image temps de vol et son procédé de démodulation

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US11894400B2 (en) 2024-02-06
EP4095913A3 (fr) 2023-03-15
US10804301B2 (en) 2020-10-13
US11444109B2 (en) 2022-09-13
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US20230040144A1 (en) 2023-02-09
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AU2018386190A1 (en) 2020-06-04
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US20190181171A1 (en) 2019-06-13
EP3724921B1 (fr) 2022-07-27
CN111466029A (zh) 2020-07-28
US20190181169A1 (en) 2019-06-13
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EP3724921A4 (fr) 2021-03-24
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