CA799642A - Insulated-gate field-effect transistor - Google Patents

Insulated-gate field-effect transistor

Info

Publication number: CA799642A
Authority: CA; Canada
Prior art keywords: insulated; effect transistor; gate field; gate; field
Prior art date: 1968-11-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA799642A

Inventor

Okumura Tomisaburo

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electronics Corp

Publication date

1968-11-19

1968-11-19 Application granted granted Critical

1968-11-19 Publication of CA799642A publication Critical patent/CA799642A/en

Status Expired legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1

CA799642A Insulated-gate field-effect transistor Expired CA799642A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA799642T

Publications (1)

Publication Number	Publication Date
CA799642A true CA799642A (en)	1968-11-19

Family

ID=36267654

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA799642A Expired CA799642A (en)			Insulated-gate field-effect transistor

Country Status (1)

Country	Link
CA (1)	CA799642A (en)

0
- CA CA799642A patent/CA799642A/en not_active Expired

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