CA966764A - In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide - Google Patents

In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide

Info

Publication number
CA966764A
CA966764A CA152,909A CA152909A CA966764A CA 966764 A CA966764 A CA 966764A CA 152909 A CA152909 A CA 152909A CA 966764 A CA966764 A CA 966764A
Authority
CA
Canada
Prior art keywords
gallium arsenide
vapor phase
phase growth
during vapor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA152,909A
Other languages
English (en)
Other versions
CA152909S (en
Inventor
James V. Dilorenzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA966764A publication Critical patent/CA966764A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421Arsenides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3438Doping during depositing
    • H10P14/3441Conductivity type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/056Gallium arsenide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
CA152,909A 1972-03-22 1972-09-29 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide Expired CA966764A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide

Publications (1)

Publication Number Publication Date
CA966764A true CA966764A (en) 1975-04-29

Family

ID=22892179

Family Applications (1)

Application Number Title Priority Date Filing Date
CA152,909A Expired CA966764A (en) 1972-03-22 1972-09-29 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide

Country Status (4)

Country Link
US (1) US3808072A (fr)
BE (2) BE797086A (fr)
CA (1) CA966764A (fr)
DE (1) DE2313471C3 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
DE102011052353A1 (de) * 2011-08-02 2013-02-07 Krones Aktiengesellschaft Schrumpftunnel

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1444502B2 (de) * 1963-08-01 1970-01-08 IBM Deutschland Internationale Büro-Maschinen OmbH, 7032 Sindelfingen Verfahren zur Regelung der Schärfe von an Galliumarsenid-Einkristallen zu bildenden pn-übergängen
US3522118A (en) * 1965-08-17 1970-07-28 Motorola Inc Gas phase etching
US3480491A (en) * 1965-11-17 1969-11-25 Ibm Vapor polishing technique
US3592706A (en) * 1968-03-20 1971-07-13 Bell Telephone Labor Inc Selective etching technique for semiconductors

Also Published As

Publication number Publication date
US3808072A (en) 1974-04-30
DE2313471A1 (de) 1973-10-04
DE2313471C3 (de) 1980-01-17
DE2313471B2 (fr) 1978-06-01
BE797085A (fr) 1973-07-16
BE797086A (fr) 1973-07-16

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