CA966764A - In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide - Google Patents
In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenideInfo
- Publication number
- CA966764A CA966764A CA152,909A CA152909A CA966764A CA 966764 A CA966764 A CA 966764A CA 152909 A CA152909 A CA 152909A CA 966764 A CA966764 A CA 966764A
- Authority
- CA
- Canada
- Prior art keywords
- gallium arsenide
- vapor phase
- phase growth
- during vapor
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00237060A US3808072A (en) | 1972-03-22 | 1972-03-22 | In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA966764A true CA966764A (en) | 1975-04-29 |
Family
ID=22892179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA152,909A Expired CA966764A (en) | 1972-03-22 | 1972-09-29 | In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3808072A (fr) |
| BE (2) | BE797086A (fr) |
| CA (1) | CA966764A (fr) |
| DE (1) | DE2313471C3 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4421576A (en) * | 1981-09-14 | 1983-12-20 | Rca Corporation | Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
| DE102011052353A1 (de) * | 2011-08-02 | 2013-02-07 | Krones Aktiengesellschaft | Schrumpftunnel |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1444502B2 (de) * | 1963-08-01 | 1970-01-08 | IBM Deutschland Internationale Büro-Maschinen OmbH, 7032 Sindelfingen | Verfahren zur Regelung der Schärfe von an Galliumarsenid-Einkristallen zu bildenden pn-übergängen |
| US3522118A (en) * | 1965-08-17 | 1970-07-28 | Motorola Inc | Gas phase etching |
| US3480491A (en) * | 1965-11-17 | 1969-11-25 | Ibm | Vapor polishing technique |
| US3592706A (en) * | 1968-03-20 | 1971-07-13 | Bell Telephone Labor Inc | Selective etching technique for semiconductors |
-
1972
- 1972-03-22 US US00237060A patent/US3808072A/en not_active Expired - Lifetime
- 1972-09-29 CA CA152,909A patent/CA966764A/en not_active Expired
-
1973
- 1973-03-17 DE DE2313471A patent/DE2313471C3/de not_active Expired
- 1973-03-21 BE BE129046A patent/BE797086A/fr not_active IP Right Cessation
- 1973-03-21 BE BE129045A patent/BE797085A/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US3808072A (en) | 1974-04-30 |
| DE2313471A1 (de) | 1973-10-04 |
| DE2313471C3 (de) | 1980-01-17 |
| DE2313471B2 (fr) | 1978-06-01 |
| BE797085A (fr) | 1973-07-16 |
| BE797086A (fr) | 1973-07-16 |
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