CH310689A - Process for the production of vinyltrichlorosilane. - Google Patents
Process for the production of vinyltrichlorosilane.Info
- Publication number
- CH310689A CH310689A CH310689DA CH310689A CH 310689 A CH310689 A CH 310689A CH 310689D A CH310689D A CH 310689DA CH 310689 A CH310689 A CH 310689A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- chlorosilane
- vinyltrichlorosilane
- reaction
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 12
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 title claims description 8
- 239000005050 vinyl trichlorosilane Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000005046 Chlorosilane Substances 0.000 claims description 7
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- -1 alkyl radical Chemical group 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003747 Grignard reaction Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- OCBFFGCSTGGPSQ-UHFFFAOYSA-N [CH2]CC Chemical compound [CH2]CC OCBFFGCSTGGPSQ-UHFFFAOYSA-N 0.000 description 1
- NUHPRPBUYOGFHX-UHFFFAOYSA-N butan-2-yl(trichloro)silane Chemical compound CCC(C)[Si](Cl)(Cl)Cl NUHPRPBUYOGFHX-UHFFFAOYSA-N 0.000 description 1
- FQEKAFQSVPLXON-UHFFFAOYSA-N butyl(trichloro)silane Chemical compound CCCC[Si](Cl)(Cl)Cl FQEKAFQSVPLXON-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GBXOGFTVYQSOID-UHFFFAOYSA-N trichloro(2-methylpropyl)silane Chemical compound CC(C)C[Si](Cl)(Cl)Cl GBXOGFTVYQSOID-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
Description
Verfahren zur Herstellung von Vinyltrichlorsilan. Gegenstand des Hauptpatentes ist ein Verfahren zur Herstellung von Methyl- trichlorsilan, das dadurch gekennzeichnet ist, dass man ein Ohlorsilan der allgemeinen Formel RSiC13, worin R ein Alkylradikal von mindestens zwei Kohlenstoffatomen bedeu tet, auf eine Temperatur von 350-800 C er hitzt.
Die vorliegende Erfindung bezieht sich auf ein Verfahren zur Herstellung von Vinyl- trichlorsilan. Das Verfahren weist den Vorteil auf, von relativ billigen Stoffen ausgehen zu können und wirtschaftlich zu arbeiten. Es ist dadurch gekennzeichnet, dass man. ein Chlor- silan der allgemeinen Formel RSiC13, in welchem Pv ein Alkylradikal mit wenigstens zwei C-Atomen in der Dampfphase auf eine Temperatur von 540-820 C erhitzt.
Bisher war die Herstellung von Vinyl- trichlorsilan mit Schwierigkeiten behaftet. Die Grignardreaktion ergibt keine befrie digenden Ausbeuten an diesem Produkt, ebensowenig wie die Reaktion von Vinyl- chlorid mit Silicium.
Wie erwähnt, haben die erfindungsgemäss umzusetzenden Ohlorsilane ein Alkylradikal R von wenigstens zwei C-Atomen. Vorzugs weise enthält dieses Radikal wenigstens ein Kohlenstoffatom in y-Stellung zum Silicium, d. h. das entsprechende Radikal ist ein Pro- pylrest oder ein höheres Homologes des Propyls. Als verfahrensgemäss umzusetzende Chlor- silane eignen sich insbesondere die folgenden:
Propyltrichlorsilan Isobutyltrichlorsilan Äthyltrichlorsilan Hexyltrichlorsilan Octadecyltrichlorsilan Die genannten Silane werden pyrolytisch geknackt, indem man sie in der Gasphase auf eine Temperatur von 540-820 C erhitzt, wobei optimale Ausbeuten im Temperatur bereich von 600-700 C erhalten werden. Unter den genannten Bedingungen knacken die höheren Alkylradikale unter Abgabe von Wasserstoff und Vinylsubstitutionsproduk- ten.
Gewünschtenfalls kann die Krackreaktion in Gegenwart eines Katalysators durchgeführt werden. Als solcher eignet sich eine Mischung von 10% Aluminiumoxyd mit 90% Kiesel säure. Die Gegenwart eines Katalysators erhöht die Reaktionsgeschwindigkeit und damit auch die Ausbeute an Vinyltrichlor- silan.
Wenn die Ausgangsstoffe auf die oben genannten Temperaturen gebracht werden, beginnt der Krackprozess sofort zu laufen. Indessen steigert sich die Ausbeute an Krack- produkt mit zunehmender Reaktionsdauer. Das Verfahren eignet sich auch gut zur kon tinuierlichen Durchführung, indem unge- krackt gebliebene Anteile in die Reaktion zurückgeführt werden können.
Das erfindungsgemässe Verfahren ist be sonders wertvoll, weil neben dem Vinyl- trichlorsilan nur kleine Anteile an uner wünschten Nebenprodukten erhalten werden. <I>Beispiel:</I> 1240 g einer Mischung von n-Butyl- trichlorsilan, sec-Butyltrichlorsilan und Iso- butyltrichlorsilan werden durch ein Quarzrohr geleitet, das mit Tonplatten gefüllt ist. Der Durchsatz beträgt 2,9 cxn@ pro Minute und die Reaktionstemperatur 650 C. Die ent weichenden Gase werden durch einen Wasser kühler geleitet, worin sich<B>991</B> g Reaktions produkt ansammeln.
Die Destillation des letzteren ergibt 91g Vinyltrichlorsilan.
Process for the production of vinyltrichlorosilane. The main patent relates to a process for the production of methyltrichlorosilane, which is characterized in that a chlorosilane of the general formula RSiC13, where R is an alkyl radical of at least two carbon atoms, is heated to a temperature of 350-800 C.
The present invention relates to a process for the production of vinyl trichlorosilane. The process has the advantage of being able to start from relatively cheap substances and of working economically. It is characterized by the fact that one. a chlorosilane of the general formula RSiC13, in which Pv heats an alkyl radical with at least two carbon atoms in the vapor phase to a temperature of 540-820 C.
Up to now, the production of vinyl trichlorosilane has been fraught with difficulties. The Grignard reaction does not give satisfactory yields of this product, any more than the reaction of vinyl chloride with silicon.
As mentioned, the chlorosilanes to be reacted according to the invention have an alkyl radical R of at least two carbon atoms. Preferably, this radical contains at least one carbon atom in the y-position to the silicon, d. H. the corresponding radical is a propyl radical or a higher homologue of propyl. The following chlorosilanes to be converted according to the process are particularly suitable:
Propyltrichlorosilane Isobutyltrichlorosilane Ethyltrichlorosilane Hexyltrichlorosilane Octadecyltrichlorosilane The silanes mentioned are cracked pyrolytically by heating them in the gas phase to a temperature of 540-820 C, with optimal yields in the temperature range of 600-700 C being obtained. Under the conditions mentioned, the higher alkyl radicals crack with the release of hydrogen and vinyl substitution products.
If desired, the cracking reaction can be carried out in the presence of a catalyst. A mixture of 10% aluminum oxide with 90% silica is suitable as such. The presence of a catalyst increases the reaction rate and thus also the yield of vinyltrichlorosilane.
When the starting materials are brought to the above-mentioned temperatures, the cracking process starts immediately. Meanwhile, the yield of cracked product increases with increasing reaction time. The process is also well suited for continuous implementation, in that fractions that have remained uncracked can be returned to the reaction.
The process according to the invention is particularly valuable because, in addition to the vinyl trichlorosilane, only small proportions of undesired by-products are obtained. <I> Example: </I> 1240 g of a mixture of n-butyltrichlorosilane, sec-butyltrichlorosilane and isobutyltrichlorosilane are passed through a quartz tube which is filled with clay plates. The throughput is 2.9 cxn @ per minute and the reaction temperature is 650 C. The escaping gases are passed through a water cooler in which 991 g of reaction product collect.
Distillation of the latter gives 91 g of vinyl trichlorosilane.
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB300013X | 1950-01-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH310689A true CH310689A (en) | 1955-10-31 |
Family
ID=10300634
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH300013D CH300013A (en) | 1950-01-09 | 1951-01-08 | Process for the production of a chlorosilane. |
| CH310688D CH310688A (en) | 1950-01-09 | 1951-01-08 | Process for the production of dimethyldichlorosilane. |
| CH310689D CH310689A (en) | 1950-01-09 | 1951-01-08 | Process for the production of vinyltrichlorosilane. |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH300013D CH300013A (en) | 1950-01-09 | 1951-01-08 | Process for the production of a chlorosilane. |
| CH310688D CH310688A (en) | 1950-01-09 | 1951-01-08 | Process for the production of dimethyldichlorosilane. |
Country Status (2)
| Country | Link |
|---|---|
| CH (3) | CH300013A (en) |
| NL (1) | NL80177C (en) |
-
0
- NL NL80177D patent/NL80177C/xx active
-
1951
- 1951-01-08 CH CH300013D patent/CH300013A/en unknown
- 1951-01-08 CH CH310688D patent/CH310688A/en unknown
- 1951-01-08 CH CH310689D patent/CH310689A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL80177C (en) | |
| CH300013A (en) | 1954-07-15 |
| CH310688A (en) | 1955-10-31 |
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