CH362061A - Verfahren zum Herstellen von reinem Bornitrid - Google Patents

Verfahren zum Herstellen von reinem Bornitrid

Info

Publication number
CH362061A
CH362061A CH362061DA CH362061A CH 362061 A CH362061 A CH 362061A CH 362061D A CH362061D A CH 362061DA CH 362061 A CH362061 A CH 362061A
Authority
CH
Switzerland
Prior art keywords
production
boron nitride
pure boron
pure
nitride
Prior art date
Application number
Other languages
English (en)
Inventor
Egon Prof Dr Wiberg
Original Assignee
Siemens Und Halske Aktiengesel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Und Halske Aktiengesel filed Critical Siemens Und Halske Aktiengesel
Publication of CH362061A publication Critical patent/CH362061A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/003—Coating on a liquid substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH362061D 1954-06-13 1954-10-21 Verfahren zum Herstellen von reinem Bornitrid CH362061A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES39578A DE976899C (de) 1954-06-13 1954-06-13 Gasentladungsanlage zur Herstellung eines Stabes aus hochreinem Silicium
DES40843A DE1042539B (de) 1954-06-13 1954-09-15 Verfahren zum Herstellen ultrareiner Halbleiterkristalle
DES58066A DE1151782B (de) 1954-06-13 1958-04-30 Verfahren zum Herstellen hochgereinigter einkristalliner Halbleiterstaebe

Publications (1)

Publication Number Publication Date
CH362061A true CH362061A (de) 1962-05-31

Family

ID=27212571

Family Applications (3)

Application Number Title Priority Date Filing Date
CH362061D CH362061A (de) 1954-06-13 1954-10-21 Verfahren zum Herstellen von reinem Bornitrid
CH355220D CH355220A (de) 1954-06-13 1954-10-21 Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
CH7245559A CH376584A (de) 1954-06-13 1959-04-23 Verfahren zum Herstellen einkristalliner Halbleiterstäbe

Family Applications After (2)

Application Number Title Priority Date Filing Date
CH355220D CH355220A (de) 1954-06-13 1954-10-21 Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
CH7245559A CH376584A (de) 1954-06-13 1959-04-23 Verfahren zum Herstellen einkristalliner Halbleiterstäbe

Country Status (6)

Country Link
US (2) US2992984A (de)
CH (3) CH362061A (de)
DE (5) DE1017795B (de)
FR (3) FR1131422A (de)
GB (3) GB795191A (de)
NL (1) NL105537C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162137A3 (en) * 1984-05-21 1987-05-13 Toshiba Tungaloy Co. Ltd. Method for preparing boron nitride

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DE1245332B (de) * 1961-09-14 1967-07-27 Gen Electric Vorrichtung zur kontinuierlichen Herstellung von Einkristallen durch Abscheidung aus der Dampfphase
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US3245761A (en) * 1962-10-11 1966-04-12 Norton Co Apparatus for making magnesium oxide crystals
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion
DE1444530B2 (de) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
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DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1248014B (de) * 1963-12-05 1967-08-24 Siemens Ag Verfahren zum Abscheiden von Halbleitermaterial unter Anwendung einer elektrischen Glimmentladung
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US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
FR1492063A (fr) * 1966-04-05 1967-08-18 Commissariat Energie Atomique Perfectionnement aux fours électriques haute fréquence pour la fabrication en continu de réfractaires électrofondus
GB1227331A (de) * 1967-04-14 1971-04-07
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
CH540995A (de) * 1971-03-22 1973-08-31 Bbc Brown Boveri & Cie Verfahren zum Aufbringen einer Schutzschicht auf einen Körper
US4068025A (en) * 1971-03-22 1978-01-10 Brown, Boveri & Company Limited Method of applying a protective coating to a body
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DE2636348A1 (de) * 1976-08-12 1978-02-16 Wacker Chemitronic Verfahren zur herstellung von reinem, elementarem halbleitermaterial
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US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
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FR2403646A1 (fr) 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
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EP3539924A1 (de) * 2018-03-14 2019-09-18 ETH Zurich Neuartige vinylphosphine und daraus erhältliche photoinitiatoren
CN111574909B (zh) * 2020-04-23 2021-11-02 华北电力大学（保定） 一种抗击穿型环氧树脂-氮化硼复合材料的制备方法
CN112827319B (zh) * 2020-12-23 2023-03-03 四川天采科技有限责任公司 一种含低浓度硅烷与碳二以上轻烃类的氯基SiC-CVD外延尾气全温程变压吸附提氢与循环再利用方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162137A3 (en) * 1984-05-21 1987-05-13 Toshiba Tungaloy Co. Ltd. Method for preparing boron nitride

Also Published As

Publication number Publication date
FR1220648A (fr) 1960-05-25
CH376584A (de) 1964-04-15
DE976899C (de) 1964-07-23
GB795191A (en) 1958-05-21
DE1042539B (de) 1958-11-06
CH355220A (de) 1961-06-30
GB812818A (en) 1959-04-29
FR1131422A (fr) 1957-02-21
DE1017795B (de) 1957-10-17
NL105537C (de) 1963-08-15
DE1151782B (de) 1963-07-25
FR1125277A (fr) 1956-10-29
DE1023889B (de) 1958-02-06
US2999737A (en) 1961-09-12
GB890230A (en) 1962-02-28
US2992984A (en) 1961-07-18

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