CH389103A - Halbleiteranordnung für Schaltzwecke - Google Patents

Halbleiteranordnung für Schaltzwecke

Info

Publication number
CH389103A
CH389103A CH1256960A CH1256960A CH389103A CH 389103 A CH389103 A CH 389103A CH 1256960 A CH1256960 A CH 1256960A CH 1256960 A CH1256960 A CH 1256960A CH 389103 A CH389103 A CH 389103A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
switching purposes
switching
purposes
semiconductor
Prior art date
Application number
CH1256960A
Other languages
English (en)
Inventor
Strull Gene
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH389103A publication Critical patent/CH389103A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1256960A 1959-11-10 1960-11-10 Halbleiteranordnung für Schaltzwecke CH389103A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85211559A 1959-11-10 1959-11-10

Publications (1)

Publication Number Publication Date
CH389103A true CH389103A (de) 1965-03-15

Family

ID=25312530

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1256960A CH389103A (de) 1959-11-10 1960-11-10 Halbleiteranordnung für Schaltzwecke

Country Status (4)

Country Link
CH (1) CH389103A (de)
DE (1) DE1190582C2 (de)
FR (1) FR1281944A (de)
GB (1) GB918816A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212642C2 (de) * 1962-05-29 1966-10-13 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
DE1212643B (de) * 1963-10-26 1966-03-17 Siemens Ag Steuerbares Halbleiterbauelement vom pnpn-Typ und Verfahren zum Herstellen
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper
DE2860654D1 (en) 1977-09-08 1981-08-06 Gen Electric Co Ltd Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
FR1163963A (fr) * 1955-11-16 1958-10-03 Sperry Rand Corp Circuit de commande de transistron avec transistron à pointes à plusieurs émetteurs
BE556305A (de) * 1956-04-18
NL233303A (de) * 1957-11-30

Also Published As

Publication number Publication date
DE1190582C2 (de) 1965-12-09
FR1281944A (fr) 1962-01-19
DE1190582B (de) 1965-04-08
GB918816A (en) 1963-02-20

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