CH392077A - Verfahren zum kontinuierlichen Ziehen dendritischer Kristalle - Google Patents

Verfahren zum kontinuierlichen Ziehen dendritischer Kristalle

Info

Publication number
CH392077A
CH392077A CH823360A CH823360A CH392077A CH 392077 A CH392077 A CH 392077A CH 823360 A CH823360 A CH 823360A CH 823360 A CH823360 A CH 823360A CH 392077 A CH392077 A CH 392077A
Authority
CH
Switzerland
Prior art keywords
dendritic crystals
continuous pulling
pulling
continuous
dendritic
Prior art date
Application number
CH823360A
Other languages
English (en)
Inventor
I Jr Bennett Allan
L Longini Richard
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH392077A publication Critical patent/CH392077A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH823360A 1959-07-23 1960-07-19 Verfahren zum kontinuierlichen Ziehen dendritischer Kristalle CH392077A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US829069A US3206286A (en) 1959-07-23 1959-07-23 Apparatus for growing crystals

Publications (1)

Publication Number Publication Date
CH392077A true CH392077A (de) 1965-05-15

Family

ID=25253438

Family Applications (1)

Application Number Title Priority Date Filing Date
CH823360A CH392077A (de) 1959-07-23 1960-07-19 Verfahren zum kontinuierlichen Ziehen dendritischer Kristalle

Country Status (4)

Country Link
US (1) US3206286A (de)
CH (1) CH392077A (de)
DE (1) DE1254131B (de)
GB (1) GB913675A (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340016A (en) * 1963-09-26 1967-09-05 Consortium Elektrochem Ind Producing and regulating translatory movement in the manufacture of semiconductor bodies
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
DE1254590B (de) * 1965-01-29 1967-11-23 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
DE2143112A1 (de) * 1971-08-27 1973-03-01 Siemens Ag Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
US4267153A (en) * 1979-08-09 1981-05-12 Mobil Tyco Solar Energy Corporation Gravity dampened guidance system
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
WO1986006109A1 (en) * 1985-04-16 1986-10-23 Energy Materials Corporation Method and apparatus for growing single crystal bodies
FR2592064B1 (fr) * 1985-12-23 1988-02-12 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
US4857278A (en) * 1987-07-13 1989-08-15 Massachusetts Institute Of Technology Control system for the czochralski process
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH085737B2 (ja) * 1990-10-17 1996-01-24 コマツ電子金属株式会社 半導体単結晶製造装置
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
JP3402038B2 (ja) * 1995-12-25 2003-04-28 信越半導体株式会社 単結晶引上げ装置
JPH10158088A (ja) * 1996-11-25 1998-06-16 Ebara Corp 固体材料の製造方法及びその製造装置
JP4059639B2 (ja) * 2001-03-14 2008-03-12 株式会社荏原製作所 結晶の引上装置
DE102009021003A1 (de) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums
US11242615B2 (en) * 2018-12-14 2022-02-08 The 13Th Research Institute Of China Electronics Technology Group Corporation Growth method and apparatus for preparing high-yield crystals
CN111733448B (zh) * 2020-08-06 2024-03-19 中国电子科技集团公司第四十六研究所 锑化铟晶体生长过程中放肩形貌的调节装置及调节方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1120560A (en) * 1913-02-11 1914-12-08 R B Mellon Automatic regulating apparatus for electrical precipitation systems.
DE429276C (de) * 1921-11-23 1926-05-22 Erwin V Gomperz Verfahren zur Herstellung von Einkristall-Metalldraehten aus der Schmelze
US2462995A (en) * 1947-04-11 1949-03-01 Gulf Oil Corp Process control system
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2737997A (en) * 1953-12-01 1956-03-13 Allwood Inc Apparatus for producing uniform mats of pourable particle material
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
NL106130C (de) * 1954-06-29
US2993301A (en) * 1955-06-03 1961-07-25 Siemens Ag Apparatus and process for making glass foil
US2907643A (en) * 1956-03-16 1959-10-06 Donald C Reynolds Apparatus for growing crystals
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2916593A (en) * 1958-07-25 1959-12-08 Gen Electric Induction heating apparatus and its use in silicon production

Also Published As

Publication number Publication date
GB913675A (en) 1962-12-28
DE1254131B (de) 1967-11-16
US3206286A (en) 1965-09-14

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