CH398801A - Process for the production of a p-doped region in a crystalline semiconductor body - Google Patents

Process for the production of a p-doped region in a crystalline semiconductor body

Info

Publication number
CH398801A
CH398801A CH168962A CH168962A CH398801A CH 398801 A CH398801 A CH 398801A CH 168962 A CH168962 A CH 168962A CH 168962 A CH168962 A CH 168962A CH 398801 A CH398801 A CH 398801A
Authority
CH
Switzerland
Prior art keywords
production
doped region
semiconductor body
crystalline semiconductor
crystalline
Prior art date
Application number
CH168962A
Other languages
German (de)
Inventor
Nagorsen Hans
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH398801A publication Critical patent/CH398801A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/22Metal melt containing the element to be diffused
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CH168962A 1961-03-11 1962-02-12 Process for the production of a p-doped region in a crystalline semiconductor body CH398801A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES72936A DE1225393B (en) 1961-03-11 1961-03-11 Use of a gold alloy with the usual boron contents for the production of a p-doped area in a crystalline semiconductor body

Publications (1)

Publication Number Publication Date
CH398801A true CH398801A (en) 1966-03-15

Family

ID=7503569

Family Applications (1)

Application Number Title Priority Date Filing Date
CH168962A CH398801A (en) 1961-03-11 1962-02-12 Process for the production of a p-doped region in a crystalline semiconductor body

Country Status (4)

Country Link
CH (1) CH398801A (en)
DE (1) DE1225393B (en)
GB (1) GB952035A (en)
NL (1) NL275311A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1101769B (en) * 1959-05-30 1961-03-09 Duerrwaechter E Dr Doduco Process for the production of gold-boron alloys and the use of these alloys for doping semiconductor materials

Also Published As

Publication number Publication date
GB952035A (en) 1964-03-11
NL275311A (en)
DE1225393B (en) 1966-09-22

Similar Documents

Publication Publication Date Title
CH447610A (en) Process for the production of a copolymer
CH410664A (en) Process for making shaped abrasive articles
CH410008A (en) Process for the production of new amino alcohols
AT259226B (en) Process for the production of a copolymer
CH371187A (en) Method for producing a doped zone in a semiconductor body
CH473585A (en) Process for the production of a cariostatic mixture
CH406779A (en) Process for the production of an oxide coating on a preferably monocrystalline body made of semiconductor material
CH423019A (en) Process for the production of a covered superconductor
AT307030B (en) Process for the production of a shaped body
CH491886A (en) Process for the production of a pregnadiene
CH434729A (en) Process for the production of a molded body with high dimensional accuracy
CH375799A (en) Method for producing a semiconductor body
CH398797A (en) Process for the production of a p-doped region in bodies made of monocrystalline semiconductor material
CH398801A (en) Process for the production of a p-doped region in a crystalline semiconductor body
AT246014B (en) Process for the production of a valve bag
CH371521A (en) Process for the production of a highly doped area in semiconductor bodies
CH379180A (en) Process for the production of a zipper
CH405292A (en) Process for the production of new homo-steroids
AT257180B (en) Process for the production of a transition piece
CH402192A (en) Process for the production of semiconductor arrangements with a single-crystal semiconductor body
CH409574A (en) Process for the production of a semiconductor component
AT238766B (en) Process for the production of a body from monocrystalline semiconductor material
CH432671A (en) Process for the production of a vanadium-containing, ferromagnetic body
CH421912A (en) Process for the production of a single-crystal semiconductor body from germanium or silicon
AT239851B (en) Method for producing a semiconductor body