CH409886A - Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium - Google Patents

Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium

Info

Publication number
CH409886A
CH409886A CH1454261A CH1454261A CH409886A CH 409886 A CH409886 A CH 409886A CH 1454261 A CH1454261 A CH 1454261A CH 1454261 A CH1454261 A CH 1454261A CH 409886 A CH409886 A CH 409886A
Authority
CH
Switzerland
Prior art keywords
germanium
crystal silicon
manufacturing disks
disks
manufacturing
Prior art date
Application number
CH1454261A
Other languages
English (en)
Inventor
Josef Dr Grabmeier
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH409886A publication Critical patent/CH409886A/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1454261A 1958-10-15 1961-12-14 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium CH409886A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60264A DE1090868B (de) 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
DES73154A DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
CH409886A true CH409886A (de) 1966-03-31

Family

ID=43127708

Family Applications (2)

Application Number Title Priority Date Filing Date
CH7918459A CH386702A (de) 1958-10-15 1959-10-08 Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze
CH1454261A CH409886A (de) 1958-10-15 1961-12-14 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH7918459A CH386702A (de) 1958-10-15 1959-10-08 Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze

Country Status (5)

Country Link
CH (2) CH386702A (de)
DE (2) DE1090868B (de)
FR (2) FR1235174A (de)
GB (2) GB898096A (de)
NL (1) NL274787A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0729815A1 (de) * 1995-02-28 1996-09-04 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen von Scheiben

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH292927A (de) * 1950-01-13 1953-08-31 Western Electric Co Verfahren und Einrichtung zur Erzeugung von Halbleiterkristallen.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0729815A1 (de) * 1995-02-28 1996-09-04 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen von Scheiben
US5918587A (en) * 1995-02-28 1999-07-06 Shin-Etsu Handotai Co., Ltd. Method of producing slices

Also Published As

Publication number Publication date
FR81564E (fr) 1963-10-11
DE1090868B (de) 1960-10-13
GB898096A (en) 1962-06-06
DE1207636B (de) 1965-12-23
GB938917A (en) 1963-10-09
NL274787A (de) 1964-09-25
FR1235174A (fr) 1960-10-26
CH386702A (de) 1965-01-15

Similar Documents

Publication Publication Date Title
CH416582A (de) Verfahren zum Herstellen von kristallischem Silizium für Halbleiteranordnungen
CH398248A (de) Verfahren zum Gewinnen reinsten Halbleitermaterials für elektrotechnische Zwecke
CH416576A (de) Verfahren zum Herstellen von Körpern aus hochgereinigtem Halbleitermaterial
CH426745A (de) Verfahren zum Herstellen von dünnen, einkristallinen halbleitenden Schichten
CH370996A (de) Verfahren zum Reinigen von festem Material
CH395342A (de) Verfahren zum Behandeln von Transistoren
CH391106A (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH414865A (de) Verfahren zum Herstellen von gleichzeitig mehreren Halbleiterbauelementen
CH426742A (de) Verfahren zum Herstellen von einkristallinem Silizium
CH386116A (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben aus Silizium
CH367898A (de) Verfahren zum Herstellen von Halbleitervorrichtungen
CH401633A (de) Verfahren zum Ätzen von im wesentlichen einkristallinen Halbleiterkörpern
CH387176A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH413110A (de) Verfahren zum Herstellen von gesinterten Halbleiterkörpern
CH377418A (de) Verfahren zum Herstellen von aus halbleitendem Material bestehenden Schenkeln für Thermoelemente
AT241818B (de) Verfahren zum Stabilisieren von Polyurethanen
CH425736A (de) Verfahren zum Herstellen einkristalliner Halbleiterstäbe
CH401634A (de) Verfahren zum formgebenden Bearbeiten von Halbleiterkristallen
CH386702A (de) Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze
CH369830A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkörpern
CH360481A (de) Verfahren zum Herstellen von Zellstrukturbaukörpern
CH410196A (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH370306A (de) Verfahren und Maschine zum Herstellen von Zahnrädern und Zahnstangen
CH371845A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
CH372384A (de) Verfahren zum Herstellen einer Halbleitervorrichtung