CH412817A - Verfahren zur Herstellung eines dendritischen Kristalls - Google Patents

Verfahren zur Herstellung eines dendritischen Kristalls

Info

Publication number
CH412817A
CH412817A CH50361A CH50361A CH412817A CH 412817 A CH412817 A CH 412817A CH 50361 A CH50361 A CH 50361A CH 50361 A CH50361 A CH 50361A CH 412817 A CH412817 A CH 412817A
Authority
CH
Switzerland
Prior art keywords
producing
dendritic crystal
dendritic
crystal
Prior art date
Application number
CH50361A
Other languages
English (en)
Inventor
I Bennett Allan
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH412817A publication Critical patent/CH412817A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH50361A 1960-01-18 1961-01-17 Verfahren zur Herstellung eines dendritischen Kristalls CH412817A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2982A US3058915A (en) 1960-01-18 1960-01-18 Crystal growing process

Publications (1)

Publication Number Publication Date
CH412817A true CH412817A (de) 1966-05-15

Family

ID=21703497

Family Applications (1)

Application Number Title Priority Date Filing Date
CH50361A CH412817A (de) 1960-01-18 1961-01-17 Verfahren zur Herstellung eines dendritischen Kristalls

Country Status (4)

Country Link
US (1) US3058915A (de)
CH (1) CH412817A (de)
DE (1) DE1222022B (de)
GB (1) GB913677A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301226A (de) * 1962-12-03
US3251655A (en) * 1963-09-27 1966-05-17 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4620897A (en) * 1983-09-19 1986-11-04 Fujitsu Limited Method for growing multicomponent compound semiconductor crystals
GB8427915D0 (en) * 1984-11-05 1984-12-12 Tsl Thermal Syndicate Plc Vitreous silica products
JP3132094B2 (ja) * 1991-10-22 2001-02-05 日立金属株式会社 単結晶の製造方法および単結晶製造装置
DE60316337T2 (de) * 2002-10-18 2008-06-05 Evergreen Solar Inc., Marlborough Verfahren und vorrichtung zur kristallzüchtung
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
WO2006029872A1 (de) * 2004-09-17 2006-03-23 Universität Hamburg Strahlendurchlässiges bauelement sowie verfahren zur herstellung desselben
CN106948004A (zh) * 2009-09-02 2017-07-14 Gtat公司 在经调节压力下使用氦的高温工艺改进
CN111610204B (zh) * 2019-02-25 2021-06-29 浙江大学 一种具有确定孪晶取向的纳米孪晶试样进行原位力学试验的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
GB769426A (en) * 1953-08-05 1957-03-06 Ass Elect Ind Improvements relating to the manufacture of crystalline material
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
NL98843C (de) * 1956-07-02
NL212548A (de) * 1956-11-28

Also Published As

Publication number Publication date
DE1222022B (de) 1966-08-04
GB913677A (en) 1962-12-28
US3058915A (en) 1962-10-16

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