CH415859A - Dispositif semi-conducteur à effet de champ - Google Patents

Dispositif semi-conducteur à effet de champ

Info

Publication number: CH415859A
Authority: CH; Switzerland
Prior art keywords: field effect; effect device; semiconductor field; semiconductor; field
Prior art date: 1961-12-16

Application number

CH1436162A

Other languages

English (en)

Inventor

Teszner Stanislas

Original Assignee

Teszner Stanislas

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1961-12-16

Filing date

1962-12-07

Publication date

1966-06-30

1962-12-07 Application filed by Teszner Stanislas filed Critical Teszner Stanislas

1966-06-30 Publication of CH415859A publication Critical patent/CH415859A/fr

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions

CH1436162A 1961-12-16 1962-12-07 Dispositif semi-conducteur à effet de champ CH415859A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR882222A FR1317256A (fr)	1961-12-16	1961-12-16	Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets

Publications (1)

Publication Number	Publication Date
CH415859A true CH415859A (fr)	1966-06-30

Family

ID=8768888

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH1436162A CH415859A (fr)	1961-12-16	1962-12-07	Dispositif semi-conducteur à effet de champ

Country Status (7)

Country	Link
US (1)	US3274461A (fr)
BE (1)	BE655058A (fr)
CH (1)	CH415859A (fr)
DE (1)	DE1207015B (fr)
FR (1)	FR1317256A (fr)
GB (1)	GB1010192A (fr)
NL (1)	NL286774A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1377330A (fr) *	1963-07-26	1964-11-06		Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
US3381188A (en) *	1964-08-18	1968-04-30	Hughes Aircraft Co	Planar multi-channel field-effect triode
US3381187A (en) *	1964-08-18	1968-04-30	Hughes Aircraft Co	High-frequency field-effect triode device
US3354362A (en) *	1965-03-23	1967-11-21	Hughes Aircraft Co	Planar multi-channel field-effect tetrode
US3430113A (en) *	1965-10-04	1969-02-25	Us Air Force	Current modulated field effect transistor
NL6711612A (fr) *	1966-12-22	1968-06-24
DE1764911A1 (de) *	1968-09-02	1971-12-02	Telefunken Patent	Unipolaranordnung
FR2157740B1 (fr) *	1971-10-29	1976-10-29	Thomson Csf
DE2263091C2 (de) *	1971-12-27	1983-01-27	Fujitsu Ltd., Kawasaki, Kanagawa	Feldeffekttransistor
JPS5134268B2 (fr) *	1972-07-13	1976-09-25
US3938241A (en) *	1972-10-24	1976-02-17	Motorola, Inc.	Vertical channel junction field-effect transistors and method of manufacture
US3855608A (en) *	1972-10-24	1974-12-17	Motorola Inc	Vertical channel junction field-effect transistors and method of manufacture
US4132996A (en) *	1976-11-08	1979-01-02	General Electric Company	Electric field-controlled semiconductor device
US4170019A (en) *	1977-08-05	1979-10-02	General Electric Company	Semiconductor device with variable grid openings for controlling turn-off pattern
US4191602A (en) *	1978-04-24	1980-03-04	General Electric Company	Liquid phase epitaxial method of making a high power, vertical channel field effect transistor
DE2926741C2 (de) *	1979-07-03	1982-09-09	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Feldeffekt-Transistor und Verfahren zu seiner Herstellung
US5032538A (en) *	1979-08-10	1991-07-16	Massachusetts Institute Of Technology	Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) *	1979-08-10	1994-03-29	Massachusetts Institute Of Technology	Semiconductor embedded layer technology including permeable base transistor
US4378629A (en) *	1979-08-10	1983-04-05	Massachusetts Institute Of Technology	Semiconductor embedded layer technology including permeable base transistor, fabrication method
US4364073A (en) *	1980-03-25	1982-12-14	Rca Corporation	Power MOSFET with an anode region
FR2501913A1 (fr) *	1981-03-10	1982-09-17	Thomson Csf	Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
FR2514949A1 (fr) *	1981-10-16	1983-04-22	Thomson Csf	Transistor a effet de champ a canal vertical
US4641174A (en) *	1983-08-08	1987-02-03	General Electric Company	Pinch rectifier
EP0167812A1 (fr) *	1984-06-08	1986-01-15	Eaton Corporation	JFET vertical à double porte
US4670764A (en) *	1984-06-08	1987-06-02	Eaton Corporation	Multi-channel power JFET with buried field shaping regions
US4635084A (en) *	1984-06-08	1987-01-06	Eaton Corporation	Split row power JFET
CN111306097B (zh) *	2020-03-06	2025-05-13	杭州兰锝净化科技有限公司	一种高强度扩散器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB500342A (en) *	1937-09-18	1939-02-07	British Thomson Houston Co Ltd	Improvements relating to dry surface-contact electric rectifiers
CH307776A (de) *	1952-01-08	1955-06-15	Ericsson Telefon Ab L M	Kontaktvorrichtung an einem Halbleiterelement.
DE1080696B (de) *	1956-12-10	1960-04-28	Stanislas Teszner	Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
US2968750A (en) *	1957-03-20	1961-01-17	Clevite Corp	Transistor structure and method of making the same
US3044909A (en) *	1958-10-23	1962-07-17	Shockley William	Semiconductive wafer and method of making the same
US3025438A (en) *	1959-09-18	1962-03-13	Tungsol Electric Inc	Field effect transistor

1961
- 1961-12-16 FR FR882222A patent/FR1317256A/fr not_active Expired
1962
- 1962-12-07 CH CH1436162A patent/CH415859A/fr unknown
- 1962-12-11 US US243793A patent/US3274461A/en not_active Expired - Lifetime
- 1962-12-13 GB GB47059/62A patent/GB1010192A/en not_active Expired
- 1962-12-14 NL NL286774D patent/NL286774A/nl unknown
- 1962-12-14 DE DET23200A patent/DE1207015B/de active Pending
1964
- 1964-10-30 BE BE655058A patent/BE655058A/fr unknown

Also Published As

Publication number	Publication date
DE1207015B (de)	1965-12-16
BE655058A (fr)	1965-02-15
NL286774A (nl)	1964-03-10
FR1317256A (fr)	1963-02-08
US3274461A (en)	1966-09-20
GB1010192A (en)	1965-11-17

Publication	Publication Date	Title
CH415859A (fr)	1966-06-30	Dispositif semi-conducteur à effet de champ
CH414872A (fr)	1966-06-15	Dispositif semi-conducteur à effet de champ à canaux multiples intégrés
FR1307591A (fr)	1962-10-26	Dispositif semi-conducteur
FR84004E (fr)	1964-11-13	Dispositif semi-conducteur
BE614767A (fr)	1962-09-02	Dispositif à semi-conducteurs.
FR1319847A (fr)	1963-03-01	Dispositif semi-conducteur
FR1350412A (fr)	1964-01-24	Dispositif semi-conducteur
FR1378015A (fr)	1964-11-13	Dispositif à semi-conducteur
FR1374321A (fr)	1964-10-09	Dispositif à semi-conducteurs
FR1276269A (fr)	1961-11-17	Dispositif semi-conducteur photosensible à effet de champ
FR1285776A (fr)	1962-02-23	Dispositif à effet de champ
FR1329372A (fr)	1963-06-07	Dispositif semiconducteur
FR1348742A (fr)	1964-01-10	Dispositif semi-conducteur
FR1378018A (fr)	1964-11-13	Dispositif semi-conducteur
FR1343239A (fr)	1963-11-15	Dispositif semiconducteur
FR83243E (fr)	1964-07-03	Dispositif semiconducteur perfectionné
FR1352429A (fr)	1964-02-14	Dispositif à semi-conducteur
FR1325585A (fr)	1963-04-26	Dispositif à semi-conducteur
FR1372216A (fr)	1964-09-11	Dispositif semi-conducteur
FR1423623A (fr)	1966-01-07	Transistor à effet de champ
FR1340121A (fr)	1963-10-11	Dispositif semi-conducteur
FR1325705A (fr)	1963-05-03	Dispositif semi-conducteur
FR83035E (fr)	1964-05-29	Dispositif semiconducteur
FR1380435A (fr)	1964-12-04	Dispositif semiconducteur
FR1338782A (fr)	1963-09-27	Dispositif semiconducteur