CH416579A - Method for producing a semiconductor component and semiconductor component produced according to this method - Google Patents

Method for producing a semiconductor component and semiconductor component produced according to this method

Info

Publication number
CH416579A
CH416579A CH1590963A CH1590963A CH416579A CH 416579 A CH416579 A CH 416579A CH 1590963 A CH1590963 A CH 1590963A CH 1590963 A CH1590963 A CH 1590963A CH 416579 A CH416579 A CH 416579A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
producing
produced according
component produced
semiconductor
Prior art date
Application number
CH1590963A
Other languages
German (de)
Inventor
C New Thorndike
W Dolan Robert
N Knopp Adalbert
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US249496A external-priority patent/US3362858A/en
Priority claimed from US249530A external-priority patent/US3249831A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH416579A publication Critical patent/CH416579A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
CH1590963A 1963-01-04 1963-12-24 Method for producing a semiconductor component and semiconductor component produced according to this method CH416579A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US249496A US3362858A (en) 1963-01-04 1963-01-04 Fabrication of semiconductor controlled rectifiers
US249530A US3249831A (en) 1963-01-04 1963-01-04 Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Publications (1)

Publication Number Publication Date
CH416579A true CH416579A (en) 1966-07-15

Family

ID=26940112

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1590963A CH416579A (en) 1963-01-04 1963-12-24 Method for producing a semiconductor component and semiconductor component produced according to this method

Country Status (2)

Country Link
CH (1) CH416579A (en)
DE (1) DE1439958A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443139A1 (en) * 1978-12-01 1980-06-27 Radiotechnique Compelec Mesa structure monolithic triac esp. light operated type - has two thyristors sharing oppositely conducting regions and terminal bridging vertically divided base layer

Also Published As

Publication number Publication date
DE1439958A1 (en) 1970-01-15

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