CH421913A - Verfahren zur Herstellung einkristalliner Aufwachsschichten auf einkristallinen Grundkörpern aus Halbleitermaterial - Google Patents

Verfahren zur Herstellung einkristalliner Aufwachsschichten auf einkristallinen Grundkörpern aus Halbleitermaterial

Info

Publication number
CH421913A
CH421913A CH950364A CH950364A CH421913A CH 421913 A CH421913 A CH 421913A CH 950364 A CH950364 A CH 950364A CH 950364 A CH950364 A CH 950364A CH 421913 A CH421913 A CH 421913A
Authority
CH
Switzerland
Prior art keywords
monocrystalline
production
semiconductor material
base bodies
bodies made
Prior art date
Application number
CH950364A
Other languages
English (en)
Inventor
Nickl Julius Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH421913A publication Critical patent/CH421913A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/079—Inert carrier gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CH950364A 1963-11-05 1964-07-21 Verfahren zur Herstellung einkristalliner Aufwachsschichten auf einkristallinen Grundkörpern aus Halbleitermaterial CH421913A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES88180A DE1244733B (de) 1963-11-05 1963-11-05 Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern

Publications (1)

Publication Number Publication Date
CH421913A true CH421913A (de) 1966-10-15

Family

ID=7514281

Family Applications (1)

Application Number Title Priority Date Filing Date
CH950364A CH421913A (de) 1963-11-05 1964-07-21 Verfahren zur Herstellung einkristalliner Aufwachsschichten auf einkristallinen Grundkörpern aus Halbleitermaterial

Country Status (6)

Country Link
US (1) US3293074A (de)
CH (1) CH421913A (de)
DE (1) DE1244733B (de)
GB (1) GB1075398A (de)
NL (1) NL6410122A (de)
SE (1) SE309967B (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229986B (de) * 1964-07-21 1966-12-08 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleiter-materials
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US3338209A (en) * 1965-10-23 1967-08-29 Sperry Rand Corp Epitaxial deposition apparatus
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
US3549424A (en) * 1967-02-24 1970-12-22 United Aircraft Corp Method for producing filamentary boron
DE1619999A1 (de) * 1967-04-07 1970-03-26 Siemens Ag Vorrichtung zum thermischen Behandeln von scheibenfoermigen Koerpern fuer Halbleiterzwecke
DE1916818A1 (de) * 1968-06-28 1970-03-12 Euratom Verfahren und Vorrichtung zur Vakuumaufdampfung monokristalliner Schichten
US3627590A (en) * 1968-12-02 1971-12-14 Western Electric Co Method for heat treatment of workpieces
DE1913676A1 (de) * 1969-03-18 1970-09-24 Siemens Ag Verfahren zum Abscheiden von Schichten aus halbleitendem bzw. isolierendem Material aus einem stroemenden Reaktionsgas auf erhitzte Halbleiterkristalle bzw. zum Dotieren solcher Kristalle aus einem stroemenden dotierenden Gas
US3610202A (en) * 1969-05-23 1971-10-05 Siemens Ag Epitactic apparatus
US3868924A (en) * 1969-06-30 1975-03-04 Siemens Ag Apparatus for indiffusing dopants into semiconductor material
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
US3805735A (en) * 1970-07-27 1974-04-23 Siemens Ag Device for indiffusing dopants into semiconductor wafers
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US3710757A (en) * 1970-12-09 1973-01-16 Texas Instruments Inc Continuous deposition system
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4171235A (en) * 1977-12-27 1979-10-16 Hughes Aircraft Company Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
US4499354A (en) * 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4524719A (en) * 1983-09-06 1985-06-25 Anicon, Inc. Substrate loading means for a chemical vapor deposition apparatus
JPS6169962A (ja) * 1984-09-13 1986-04-10 Agency Of Ind Science & Technol 霧化薄膜作製装置
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US5122394A (en) * 1985-12-23 1992-06-16 Atochem North America, Inc. Apparatus for coating a substrate
US4928627A (en) * 1985-12-23 1990-05-29 Atochem North America, Inc. Apparatus for coating a substrate
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3884810T2 (de) * 1988-06-22 1994-05-05 Advanced Semiconductor Mat Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag.
US5680502A (en) * 1995-04-03 1997-10-21 Varian Associates, Inc. Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield
JPH08306632A (ja) * 1995-04-27 1996-11-22 Shin Etsu Handotai Co Ltd 気相エピタキシャル成長装置
JP3206375B2 (ja) * 1995-06-20 2001-09-10 信越半導体株式会社 単結晶薄膜の製造方法
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
DE10157946A1 (de) * 2001-11-27 2003-06-05 Osram Opto Semiconductors Gmbh Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US20070283783A1 (en) * 2005-08-10 2007-12-13 Mercuri Robert A Process for the production of nano-scale metal particles
US20070286778A1 (en) * 2005-08-10 2007-12-13 Mercuri Robert A Apparatus for the continuous production of nano-scale metal particles
US20070283782A1 (en) * 2005-08-10 2007-12-13 Mercuri Robert A Continuous process for the production of nano-scale metal particles

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (de) * 1951-03-07 1900-01-01
GB749293A (en) * 1954-03-17 1956-05-23 Ohio Commw Eng Co Method and apparatus for deposition of materials by thermal decomposition
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs
NL256255A (de) * 1959-11-02
DE1197059B (de) 1963-06-27 1965-07-22 Siemens Ag Vorrichtung zur Herstellung einkristalliner Schichten auf einkristallinen Grundkoerpern, vorzugsweise auf Scheiben, aus Halbleitermaterial

Also Published As

Publication number Publication date
SE309967B (de) 1969-04-14
DE1244733B (de) 1967-07-20
NL6410122A (de) 1965-05-06
US3293074A (en) 1966-12-20
GB1075398A (en) 1967-07-12

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