CH510328A - Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden - Google Patents

Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden

Info

Publication number
CH510328A
CH510328A CH1477369A CH1477369A CH510328A CH 510328 A CH510328 A CH 510328A CH 1477369 A CH1477369 A CH 1477369A CH 1477369 A CH1477369 A CH 1477369A CH 510328 A CH510328 A CH 510328A
Authority
CH
Switzerland
Prior art keywords
production
silicon carbide
resistance silicon
carbide diodes
diodes
Prior art date
Application number
CH1477369A
Other languages
English (en)
Inventor
Maximilian Dipl Phys Koeniger
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1477369A priority Critical patent/CH510328A/de
Priority to DE19691956011 priority patent/DE1956011A1/de
Priority to FR7035321A priority patent/FR2064080A7/fr
Publication of CH510328A publication Critical patent/CH510328A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
CH1477369A 1969-10-01 1969-10-01 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden CH510328A (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CH1477369A CH510328A (de) 1969-10-01 1969-10-01 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden
DE19691956011 DE1956011A1 (de) 1969-10-01 1969-11-07 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden
FR7035321A FR2064080A7 (en) 1969-10-01 1970-09-30 High resistance silicon-carbide diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1477369A CH510328A (de) 1969-10-01 1969-10-01 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden

Publications (1)

Publication Number Publication Date
CH510328A true CH510328A (de) 1971-07-15

Family

ID=4403709

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1477369A CH510328A (de) 1969-10-01 1969-10-01 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden

Country Status (3)

Country Link
CH (1) CH510328A (de)
DE (1) DE1956011A1 (de)
FR (1) FR2064080A7 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
JPH06333892A (ja) * 1993-03-22 1994-12-02 Fuji Electric Corp Res & Dev Ltd 電子デバイス
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid

Also Published As

Publication number Publication date
FR2064080A7 (en) 1971-07-16
DE1956011A1 (de) 1971-04-15
FR2064080B3 (de) 1973-06-08

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Legal Events

Date Code Title Description
PL Patent ceased