CH436229A - Verfahren zum Herstellen gleichmässig dotierter Siliziumstäbe - Google Patents

Verfahren zum Herstellen gleichmässig dotierter Siliziumstäbe

Info

Publication number
CH436229A
CH436229A CH439560A CH439560A CH436229A CH 436229 A CH436229 A CH 436229A CH 439560 A CH439560 A CH 439560A CH 439560 A CH439560 A CH 439560A CH 436229 A CH436229 A CH 436229A
Authority
CH
Switzerland
Prior art keywords
production
doped silicon
silicon rods
evenly doped
evenly
Prior art date
Application number
CH439560A
Other languages
English (en)
Inventor
R Harding William
Winter Jeannette
E Winter William
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH436229A publication Critical patent/CH436229A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
CH439560A 1959-04-20 1960-04-19 Verfahren zum Herstellen gleichmässig dotierter Siliziumstäbe CH436229A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80753859A 1959-04-20 1959-04-20

Publications (1)

Publication Number Publication Date
CH436229A true CH436229A (de) 1967-05-31

Family

ID=25196610

Family Applications (1)

Application Number Title Priority Date Filing Date
CH439560A CH436229A (de) 1959-04-20 1960-04-19 Verfahren zum Herstellen gleichmässig dotierter Siliziumstäbe

Country Status (2)

Country Link
CH (1) CH436229A (de)
DE (2) DE1245331B (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
BE510303A (de) 1951-11-16
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1017795B (de) 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten

Also Published As

Publication number Publication date
DE1211592B (de) 1966-03-03
DE1245331B (de) 1967-07-27

Similar Documents

Publication Publication Date Title
CH362061A (de) Verfahren zum Herstellen von reinem Bornitrid
CH416582A (de) Verfahren zum Herstellen von kristallischem Silizium für Halbleiteranordnungen
FR1255121A (fr) Procédé de production de nitriles non saturés
BE592353A (fr) Procédé de corsion
CH478594A (de) Verfahren zum Herstellen hochreiner Siliciumstäbe
CH426745A (de) Verfahren zum Herstellen von dünnen, einkristallinen halbleitenden Schichten
CH414865A (de) Verfahren zum Herstellen von gleichzeitig mehreren Halbleiterbauelementen
CH441239A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkristallen mit sehr hoher Reinheit
FR1301940A (fr) Procédé de production du bismuth
CH426742A (de) Verfahren zum Herstellen von einkristallinem Silizium
BE591156A (fr) Procédé de recuit
CH413110A (de) Verfahren zum Herstellen von gesinterten Halbleiterkörpern
CH384556A (it) Procedimento per la produzione di zincocianamide
FR1244721A (fr) Procédé pour produire des eupolyoxy-méthylènes
FR1248252A (fr) Procédé pour la production de cyclododécanonoxime
CH425736A (de) Verfahren zum Herstellen einkristalliner Halbleiterstäbe
CH387176A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH369830A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkörpern
CH399983A (de) Verfahren zum Herstellen flacher keramischer Körper
CH360481A (de) Verfahren zum Herstellen von Zellstrukturbaukörpern
CH382296A (de) Verfahren zur Herstellung von einkristallinem Halbleitermaterial
CH442248A (de) Verfahren zum Herstellen von dotierten Halbleitereinkristallen
CH395680A (de) Verfahren zum Herstellen einkristalliner Schichten
FR1450356A (fr) Procédé de fabrication des perfluoroalcanes
FR1475602A (fr) Procédé pour la production de diamino-1-4 anthraquinone dinitrile-2-3