CH437536A - Flächentransistor mit einem kammförmig ausgebildeten Emitterbereich - Google Patents

Flächentransistor mit einem kammförmig ausgebildeten Emitterbereich

Info

Publication number
CH437536A
CH437536A CH1520264A CH1520264A CH437536A CH 437536 A CH437536 A CH 437536A CH 1520264 A CH1520264 A CH 1520264A CH 1520264 A CH1520264 A CH 1520264A CH 437536 A CH437536 A CH 437536A
Authority
CH
Switzerland
Prior art keywords
comb
emitter area
shaped emitter
flat transistor
transistor
Prior art date
Application number
CH1520264A
Other languages
English (en)
Inventor
A Forrest Richard
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH437536A publication Critical patent/CH437536A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
CH1520264A 1963-11-29 1964-11-25 Flächentransistor mit einem kammförmig ausgebildeten Emitterbereich CH437536A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US326989A US3309585A (en) 1963-11-29 1963-11-29 Junction transistor structure with interdigitated configuration having features to minimize localized heating

Publications (1)

Publication Number Publication Date
CH437536A true CH437536A (de) 1967-06-15

Family

ID=23274649

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1520264A CH437536A (de) 1963-11-29 1964-11-25 Flächentransistor mit einem kammförmig ausgebildeten Emitterbereich

Country Status (4)

Country Link
US (1) US3309585A (de)
CH (1) CH437536A (de)
DE (1) DE1439975A1 (de)
GB (1) GB1032599A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439760B2 (de) * 1964-12-19 1976-06-24 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Transistor und verfahren zu seiner herstellung
DE1465450B1 (de) * 1964-12-22 1970-07-23 As Danfoss Elektronisches Festk¦rperbauelement zum Schalten
DE1514008B2 (de) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg Flaechentransistor
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
US3457631A (en) * 1965-11-09 1969-07-29 Gen Electric Method of making a high frequency transistor structure
GB1142674A (en) * 1966-02-18 1969-02-12 Mullard Ltd Improvements in and relating to insulated gate field effect transistors
US3503124A (en) * 1967-02-08 1970-03-31 Frank M Wanlass Method of making a semiconductor device
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
US3896486A (en) * 1968-05-06 1975-07-22 Rca Corp Power transistor having good thermal fatigue capabilities
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices
US3600646A (en) * 1969-12-18 1971-08-17 Rca Corp Power transistor
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
US4291329A (en) * 1979-08-31 1981-09-22 Westinghouse Electric Corp. Thyristor with continuous recombination center shunt across planar emitter-base junction
JPH06342803A (ja) * 1992-05-29 1994-12-13 Texas Instr Inc <Ti> トランジスタ
US5467456A (en) * 1992-06-16 1995-11-14 Ncr Corporation High speed bus branches with compact physical spacing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US3124640A (en) * 1960-01-20 1964-03-10 Figure
US3214652A (en) * 1962-03-19 1965-10-26 Motorola Inc Transistor comprising prong-shaped emitter electrode
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor

Also Published As

Publication number Publication date
DE1439975A1 (de) 1968-12-19
GB1032599A (en) 1966-06-15
US3309585A (en) 1967-03-14

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