CH466298A - Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten - Google Patents

Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten

Info

Publication number
CH466298A
CH466298A CH1154865A CH1154865A CH466298A CH 466298 A CH466298 A CH 466298A CH 1154865 A CH1154865 A CH 1154865A CH 1154865 A CH1154865 A CH 1154865A CH 466298 A CH466298 A CH 466298A
Authority
CH
Switzerland
Prior art keywords
isoquinolobenzodiazepine
derivatives
preparation
new
new isoquinolobenzodiazepine
Prior art date
Application number
CH1154865A
Other languages
English (en)
Inventor
Ott Hans
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Publication of CH466298A publication Critical patent/CH466298A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D471/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04Ortho-condensed systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/17Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Rectifiers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thyristors (AREA)
CH1154865A 1964-08-07 1965-08-17 Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten CH466298A (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
CH466298A true CH466298A (de) 1968-12-15

Family

ID=27541415

Family Applications (5)

Application Number Title Priority Date Filing Date
CH1112065A CH460031A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824568A CH460008A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH824468A CH460007A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH824368A CH460033A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH1154865A CH466298A (de) 1964-08-07 1965-08-17 Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten

Family Applications Before (4)

Application Number Title Priority Date Filing Date
CH1112065A CH460031A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824568A CH460008A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH824468A CH460007A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH824368A CH460033A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate

Country Status (17)

Country Link
BE (1) BE668687A (de)
BG (1) BG17566A3 (de)
BR (4) BR6572394D0 (de)
CA (1) CA953297A (de)
CH (5) CH460031A (de)
CY (1) CY613A (de)
DE (3) DE1514363B1 (de)
ES (1) ES337005A1 (de)
FI (1) FI46968C (de)
FR (2) FR4985M (de)
GB (7) GB1084598A (de)
IL (1) IL24214A (de)
MC (1) MC542A1 (de)
MY (1) MY7100223A (de)
NL (4) NL6510287A (de)
NO (1) NO120580B (de)
SE (5) SE312863B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (de) 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
EP0603971A3 (de) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Halbleiteranordnung mit passivierten Seitenflächen und Verfahren zu ihrer Herstellung.
EP0603973A3 (de) * 1992-12-23 1995-06-28 Philips Electronics Nv Halbleiteranordnung mit durch Gräben separierten p-n Übergängen und Verfahren zu ihrer Herstellung.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL255453A (de) * 1960-02-04
NL284599A (de) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
GB1112334A (en) 1968-05-01
GB1133376A (en) 1968-11-13
FR5364M (de) 1967-09-11
CH460033A (de) 1968-07-31
CY613A (en) 1971-10-01
BR6572394D0 (pt) 1973-08-14
NL6611133A (de) 1967-02-10
GB1126352A (en) 1968-09-05
NL6607936A (de) 1966-12-12
IL24214A (en) 1969-06-25
BE668687A (de) 1966-02-23
DE1564537B2 (de) 1973-01-25
SE351641B (de) 1972-12-04
CH460008A (de) 1968-07-31
CH460031A (de) 1968-07-31
GB1126353A (en) 1968-09-05
NL129867C (de) 1900-01-01
SE345040B (de) 1972-05-08
BR6680263D0 (pt) 1973-03-01
SE322227B (de) 1970-04-06
DE1620295C3 (de) 1975-05-22
DE1620295A1 (de) 1970-02-19
CA953297A (en) 1974-08-20
ES337005A1 (es) 1968-01-16
BR6572393D0 (pt) 1973-08-14
BR6681707D0 (pt) 1973-09-06
DE1620295B2 (de) 1974-10-03
GB1120488A (en) 1968-07-17
DE1514363B1 (de) 1970-06-18
DE1620294A1 (de) 1970-02-05
MY7100223A (en) 1971-12-31
DE1564537A1 (de) 1970-07-30
FI46968C (fi) 1973-08-10
FR4985M (de) 1967-04-10
GB1126354A (en) 1968-09-05
NO120580B (de) 1970-11-09
SE350500B (de) 1972-10-30
MC542A1 (fr) 1966-04-06
CH460007A (de) 1968-07-31
NL6510287A (de) 1966-02-08
SE312863B (de) 1969-07-28
BG17566A3 (bg) 1973-11-10
FI46968B (de) 1973-05-02
GB1084598A (en) 1967-09-27

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