CH489905A - Halbleiterbauelement mit mindestens zwei an die Oberfläche tretenden Zonen unterschiedlichen Leitfähigkeitstyps - Google Patents

Halbleiterbauelement mit mindestens zwei an die Oberfläche tretenden Zonen unterschiedlichen Leitfähigkeitstyps

Info

Publication number
CH489905A
CH489905A CH822169A CH822169A CH489905A CH 489905 A CH489905 A CH 489905A CH 822169 A CH822169 A CH 822169A CH 822169 A CH822169 A CH 822169A CH 489905 A CH489905 A CH 489905A
Authority
CH
Switzerland
Prior art keywords
zones
semiconductor component
conductivity types
different conductivity
emerging
Prior art date
Application number
CH822169A
Other languages
English (en)
Inventor
Philips John
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH489905A publication Critical patent/CH489905A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
CH822169A 1968-05-31 1969-05-29 Halbleiterbauelement mit mindestens zwei an die Oberfläche tretenden Zonen unterschiedlichen Leitfähigkeitstyps CH489905A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73360668A 1968-05-31 1968-05-31

Publications (1)

Publication Number Publication Date
CH489905A true CH489905A (de) 1970-04-30

Family

ID=24948356

Family Applications (1)

Application Number Title Priority Date Filing Date
CH822169A CH489905A (de) 1968-05-31 1969-05-29 Halbleiterbauelement mit mindestens zwei an die Oberfläche tretenden Zonen unterschiedlichen Leitfähigkeitstyps

Country Status (10)

Country Link
US (1) US3525910A (de)
JP (1) JPS4921983B1 (de)
BE (1) BE733661A (de)
BR (1) BR6909280D0 (de)
CH (1) CH489905A (de)
DE (1) DE1925393A1 (de)
FR (1) FR2009776A1 (de)
GB (1) GB1211978A (de)
IE (1) IE33787B1 (de)
SE (1) SE355261B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631307A (en) * 1970-02-13 1971-12-28 Itt Semiconductor structures having improved high-frequency response and power dissipation capabilities
US3878553A (en) * 1972-12-26 1975-04-15 Texas Instruments Inc Interdigitated mesa beam lead diode and series array thereof
FR2254879B1 (de) * 1973-12-12 1977-09-23 Alsthom Cgee
DE2525390A1 (de) * 1975-06-06 1976-12-16 Siemens Ag Steuerbares halbleiterbauelement
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
US4402004A (en) * 1978-01-07 1983-08-30 Tokyo Shibaura Denki Kabushiki Kaisha High current press pack semiconductor device having a mesa structure
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
GB2145559A (en) * 1983-08-26 1985-03-27 Philips Electronic Associated Interdigitated semiconductor device
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices
US5661315A (en) * 1995-12-28 1997-08-26 Asea Brown Boveri Ag Controllable power semiconductor component
US6081039A (en) * 1997-12-05 2000-06-27 International Rectifier Corporation Pressure assembled motor cube
US11031343B2 (en) 2019-06-21 2021-06-08 International Business Machines Corporation Fins for enhanced die communication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ

Also Published As

Publication number Publication date
DE1925393A1 (de) 1969-12-04
BR6909280D0 (pt) 1973-01-02
IE33787B1 (en) 1974-10-30
IE33787L (en) 1969-11-30
JPS4921983B1 (de) 1974-06-05
BE733661A (de) 1969-11-03
FR2009776A1 (de) 1970-02-06
SE355261B (de) 1973-04-09
GB1211978A (en) 1970-11-11
US3525910A (en) 1970-08-25

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Legal Events

Date Code Title Description
PL Patent ceased