CH497793A - Verfahren zum Herstellen einer Schutzschicht aus einer Silizium- oder Germaniumstickstoff- Verbindung an der Oberfläche einer Halbleiterkristalls - Google Patents

Verfahren zum Herstellen einer Schutzschicht aus einer Silizium- oder Germaniumstickstoff- Verbindung an der Oberfläche einer Halbleiterkristalls

Info

Publication number
CH497793A
CH497793A CH595567A CH595567A CH497793A CH 497793 A CH497793 A CH 497793A CH 595567 A CH595567 A CH 595567A CH 595567 A CH595567 A CH 595567A CH 497793 A CH497793 A CH 497793A
Authority
CH
Switzerland
Prior art keywords
silicon
producing
protective layer
semiconductor crystal
nitrogen compound
Prior art date
Application number
CH595567A
Other languages
English (en)
Inventor
Erich Dr Pammer
Horst Dr Panholzer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH497793A publication Critical patent/CH497793A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CH595567A 1966-04-29 1967-04-26 Verfahren zum Herstellen einer Schutzschicht aus einer Silizium- oder Germaniumstickstoff- Verbindung an der Oberfläche einer Halbleiterkristalls CH497793A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0103522 1966-04-29

Publications (1)

Publication Number Publication Date
CH497793A true CH497793A (de) 1970-10-15

Family

ID=7525247

Family Applications (1)

Application Number Title Priority Date Filing Date
CH595567A CH497793A (de) 1966-04-29 1967-04-26 Verfahren zum Herstellen einer Schutzschicht aus einer Silizium- oder Germaniumstickstoff- Verbindung an der Oberfläche einer Halbleiterkristalls

Country Status (7)

Country Link
US (1) US3574677A (de)
AT (1) AT269947B (de)
CH (1) CH497793A (de)
DE (1) DE1544287B2 (de)
GB (1) GB1134964A (de)
NL (1) NL6703642A (de)
SE (1) SE353978B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4036653A (en) * 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
JPS62134936A (ja) * 1985-12-05 1987-06-18 アニコン・インコ−ポレ−テツド 腐食耐性をもつたウエ−フア−・ボ−ト及びその製造法
DE4212501C1 (en) * 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio
JP3257587B2 (ja) * 1997-05-23 2002-02-18 日本電気株式会社 誘電体膜を用いた半導体装置の製造方法
US5874368A (en) * 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
JP2003166060A (ja) * 2001-11-30 2003-06-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Ｃｖｄ法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法
TW200424343A (en) * 2002-09-05 2004-11-16 Asml Us Inc Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition
US20060019032A1 (en) * 2004-07-23 2006-01-26 Yaxin Wang Low thermal budget silicon nitride formation for advance transistor fabrication
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
CN114429898B (zh) * 2021-12-17 2025-04-08 浙江富芯微电子有限公司 一种用于制备氮化物单晶薄膜的碳化硅复合衬底

Also Published As

Publication number Publication date
NL6703642A (de) 1967-10-30
US3574677A (en) 1971-04-13
SE353978B (de) 1973-02-19
GB1134964A (en) 1968-11-27
DE1544287B2 (de) 1975-12-04
AT269947B (de) 1969-04-10
DE1544287A1 (de) 1969-07-10

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