CH500590A - Verfahren zum Herstellen eines Transistors - Google Patents
Verfahren zum Herstellen eines TransistorsInfo
- Publication number
- CH500590A CH500590A CH716467A CH716467A CH500590A CH 500590 A CH500590 A CH 500590A CH 716467 A CH716467 A CH 716467A CH 716467 A CH716467 A CH 716467A CH 500590 A CH500590 A CH 500590A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1966S0103928 DE1564608B2 (de) | 1966-05-23 | 1966-05-23 | Verfahren zum herstellen eines transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH500590A true CH500590A (de) | 1970-12-15 |
Family
ID=7525526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH716467A CH500590A (de) | 1966-05-23 | 1967-05-22 | Verfahren zum Herstellen eines Transistors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3535771A (de) |
| AT (1) | AT267613B (de) |
| CH (1) | CH500590A (de) |
| DE (1) | DE1564608B2 (de) |
| GB (1) | GB1137373A (de) |
| NL (1) | NL6703638A (de) |
| SE (1) | SE356636B (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3601888A (en) * | 1969-04-25 | 1971-08-31 | Gen Electric | Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor |
| US4213807A (en) * | 1979-04-20 | 1980-07-22 | Rca Corporation | Method of fabricating semiconductor devices |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL204025A (de) * | 1955-03-23 | |||
| US2856320A (en) * | 1955-09-08 | 1958-10-14 | Ibm | Method of making transistor with welded collector |
| US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
| NL252131A (de) * | 1959-06-30 | |||
| US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
| US3341375A (en) * | 1964-07-08 | 1967-09-12 | Ibm | Fabrication technique |
-
1966
- 1966-05-23 DE DE1966S0103928 patent/DE1564608B2/de active Granted
-
1967
- 1967-03-08 NL NL6703638A patent/NL6703638A/xx unknown
- 1967-05-19 US US639885A patent/US3535771A/en not_active Expired - Lifetime
- 1967-05-22 AT AT475467A patent/AT267613B/de active
- 1967-05-22 GB GB23602/67A patent/GB1137373A/en not_active Expired
- 1967-05-22 CH CH716467A patent/CH500590A/de not_active IP Right Cessation
- 1967-05-23 SE SE07246/67A patent/SE356636B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6703638A (de) | 1967-11-24 |
| SE356636B (de) | 1973-05-28 |
| DE1564608B2 (de) | 1976-11-18 |
| US3535771A (en) | 1970-10-27 |
| AT267613B (de) | 1969-01-10 |
| DE1564608A1 (de) | 1970-05-14 |
| GB1137373A (en) | 1968-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1938365B2 (de) | Verfahren zum herstellen eines transistors | |
| CH505473A (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
| CH440462A (de) | Verfahren zum Herstellen eines Anschlusses an einer Halbleitervorrichtung | |
| AT296390B (de) | Verfahren zur Herstellung eines Feldeffekttransistors | |
| DE1803028B2 (de) | Verfahren zum herstellen eines feldeffekttransistors | |
| CH490511A (de) | Verfahren zum Herstellen eines Formstückes | |
| AT264596B (de) | Verfahren zum Herstellen eines Transistors | |
| AT278093B (de) | Verfahren zur Herstellung eines Transistors | |
| CH447393A (de) | Verfahren zum Herstellen von Feldeffekttransistoren | |
| CH441510A (de) | Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ | |
| CH387720A (de) | Verfahren zum Herstellen eines thermoelektrischen Bauelementes | |
| DE1800347B2 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| AT267613B (de) | Verfahren zum Herstellen eines Transistors | |
| CH457630A (de) | Verfahren zum Herstellen eines Halbleiterdetektors | |
| AT324426B (de) | Verfahren zum herstellen eines pnp-silizium-transistors | |
| CH385349A (de) | Verfahren zum Herstellen eines Transistors | |
| CH414019A (de) | Verfahren zum Herstellen eines Halbleiter-Bauelements | |
| CH474857A (de) | Verfahren zum Herstellen eines Germanium-Planar-Transistors | |
| AT292786B (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| DE2037589B2 (de) | Verfahren zum herstellen eines sperrschicht-feldeffekttransistors | |
| CH481489A (de) | Verfahren zur Herstellung eines Transistors | |
| CH474859A (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
| AT292787B (de) | Verfahren zum Herstellen eines Transistors | |
| AT286361B (de) | Verfahren zum herstellen eines diffusionstransistors aus silizium | |
| CH483121A (de) | Verfahren zum Herstellen eines Germaniumtransistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |