CH653714A5 - Verfahren zur herstellung von silicium-einkristallen. - Google Patents

Verfahren zur herstellung von silicium-einkristallen. Download PDF

Info

Publication number: CH653714A5
Authority: CH; Switzerland
Prior art keywords: silicon; melt; impurities; crucible; purity
Prior art date: 1980-09-26

Application number

CH5763/81A

Other languages

German (de)

English (en)

Inventor

Frederick Schmid

Chandra P Khattak

Original Assignee

Crystal Syst

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-09-26

Filing date

1981-09-07

Publication date

1986-01-15

1981-09-07 Application filed by Crystal Syst filed Critical Crystal Syst

1986-01-15 Publication of CH653714A5 publication Critical patent/CH653714A5/de

Links

229910052710 silicon Inorganic materials 0.000 title claims description 49
239000010703 silicon Substances 0.000 title claims description 49
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 46
239000013078 crystal Substances 0.000 title claims description 31
238000004519 manufacturing process Methods 0.000 title claims description 8
238000000034 method Methods 0.000 claims description 42
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
239000000155 melt Substances 0.000 claims description 30
239000012535 impurity Substances 0.000 claims description 29
239000000377 silicon dioxide Substances 0.000 claims description 18
235000012239 silicon dioxide Nutrition 0.000 claims description 15
239000000356 contaminant Substances 0.000 claims description 11
230000008018 melting Effects 0.000 claims description 9
238000002844 melting Methods 0.000 claims description 9
238000007711 solidification Methods 0.000 claims description 6
230000008023 solidification Effects 0.000 claims description 6
238000006243 chemical reaction Methods 0.000 claims description 5
239000007795 chemical reaction product Substances 0.000 claims description 5
230000015572 biosynthetic process Effects 0.000 claims description 4
229910052739 hydrogen Inorganic materials 0.000 claims description 4
239000001257 hydrogen Substances 0.000 claims description 4
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
239000000460 chlorine Substances 0.000 claims description 3
229910052801 chlorine Inorganic materials 0.000 claims description 3
239000000376 reactant Substances 0.000 claims 2
FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 claims 1
239000003245 coal Substances 0.000 claims 1
239000012530 fluid Substances 0.000 claims 1
230000005012 migration Effects 0.000 claims 1
238000013508 migration Methods 0.000 claims 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 18
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
229910010271 silicon carbide Inorganic materials 0.000 description 13
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
239000007788 liquid Substances 0.000 description 11
239000007787 solid Substances 0.000 description 10
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
229910052750 molybdenum Inorganic materials 0.000 description 9
239000011733 molybdenum Substances 0.000 description 9
229910002804 graphite Inorganic materials 0.000 description 7
239000010439 graphite Substances 0.000 description 7
229910052799 carbon Inorganic materials 0.000 description 6
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
229910052796 boron Inorganic materials 0.000 description 5
238000010438 heat treatment Methods 0.000 description 5
239000007789 gas Substances 0.000 description 4
150000003376 silicon Chemical class 0.000 description 4
239000000463 material Substances 0.000 description 3
239000002245 particle Substances 0.000 description 3
238000007670 refining Methods 0.000 description 3
239000002893 slag Substances 0.000 description 3
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
229910002091 carbon monoxide Inorganic materials 0.000 description 2
230000006378 damage Effects 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
238000005204 segregation Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
230000001464 adherent effect Effects 0.000 description 1
229910052783 alkali metal Inorganic materials 0.000 description 1
150000001340 alkali metals Chemical class 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
-1 aluminum Chemical class 0.000 description 1
239000002585 base Substances 0.000 description 1
229910002092 carbon dioxide Inorganic materials 0.000 description 1
239000001569 carbon dioxide Substances 0.000 description 1
238000005266 casting Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
230000000994 depressogenic effect Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000012467 final product Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000013067 intermediate product Substances 0.000 description 1
NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical class Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
150000001247 metal acetylides Chemical class 0.000 description 1
229910003465 moissanite Inorganic materials 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
239000012071 phase Substances 0.000 description 1
239000000047 product Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000011863 silicon-based powder Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000003756 stirring Methods 0.000 description 1
239000000725 suspension Substances 0.000 description 1
ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
239000005052 trichlorosilane Substances 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
- F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
- F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Electroplating Methods And Accessories (AREA)

CH5763/81A 1980-09-26 1981-09-07 Verfahren zur herstellung von silicium-einkristallen. CH653714A5 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US19126080A	1980-09-26	1980-09-26

Publications (1)

Publication Number	Publication Date
CH653714A5 true CH653714A5 (de)	1986-01-15

Family

ID=22704771

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH5763/81A CH653714A5 (de)	1980-09-26	1981-09-07	Verfahren zur herstellung von silicium-einkristallen.

Country Status (9)

Country	Link
JP (1)	JPS5785667A (fr)
BE (1)	BE890508A (fr)
CA (1)	CA1193522A (fr)
CH (1)	CH653714A5 (fr)
DE (1)	DE3138227A1 (fr)
FR (1)	FR2491095B1 (fr)
GB (1)	GB2084978B (fr)
IT (1)	IT1144865B (fr)
NL (1)	NL8104333A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2908125B1 (fr) *	2006-11-02	2009-11-20	Commissariat Energie Atomique	Procede de purification de silicium metallurgique par solidification dirigee
TW201012988A (en) *	2008-08-27	2010-04-01	Bp Corp North America Inc	Gas recirculation heat exchanger for casting silicon
US20110180229A1 (en) *	2010-01-28	2011-07-28	Memc Singapore Pte. Ltd. (Uen200614794D)	Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en)	2011-03-31	2012-10-04	Memc Singapore Pte. Ltd. (Uen200614794D)	Systems For Insulating Directional Solidification Furnaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2933164A1 (de) *	1979-08-16	1981-02-26	Consortium Elektrochem Ind	Verfahren zum reinigen von rohsilicium

1981
- 1981-08-26 GB GB8126055A patent/GB2084978B/en not_active Expired
- 1981-09-07 CH CH5763/81A patent/CH653714A5/de not_active IP Right Cessation
- 1981-09-16 IT IT68211/81A patent/IT1144865B/it active
- 1981-09-21 NL NL8104333A patent/NL8104333A/nl not_active Application Discontinuation
- 1981-09-25 JP JP56151930A patent/JPS5785667A/ja active Pending
- 1981-09-25 FR FR8118149A patent/FR2491095B1/fr not_active Expired
- 1981-09-25 DE DE19813138227 patent/DE3138227A1/de not_active Withdrawn
- 1981-09-25 BE BE0/206076A patent/BE890508A/fr not_active IP Right Cessation
- 1981-09-25 CA CA000386705A patent/CA1193522A/fr not_active Expired

Also Published As

Publication number	Publication date
IT1144865B (it)	1986-10-29
NL8104333A (nl)	1982-04-16
FR2491095B1 (fr)	1986-08-22
FR2491095A1 (fr)	1982-04-02
JPS5785667A (en)	1982-05-28
GB2084978B (en)	1984-07-04
BE890508A (fr)	1982-01-18
DE3138227A1 (de)	1982-07-22
GB2084978A (en)	1982-04-21
CA1193522A (fr)	1985-09-17
IT8168211A0 (it)	1981-09-16

Legal Events

Date	Code	Title	Description
1989-05-31	PL	Patent ceased
2024-10-31	PL	Patent ceased

Publication	Publication Date	Title
DE69621348T2 (de)	2002-09-05	Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle
DE69932760T2 (de)	2006-12-07	Verfahren und Vorrichtung zur Herstellung eines Siliciumstabes mit einer Struktur hergestellt durch gerichtete Erstarrung
CH670624A5 (fr)	1989-06-30
DE3390373T1 (de)	1985-01-24	Verfahren und Einrichtung zur Erzeugung von Silizium aus Fluorkieselsäure
DE69201292T2 (de)	1995-09-14	Vorrichtung zur Einkristallziehung.
DE3635064C2 (fr)	1991-11-07
EP2558232B1 (fr)	2017-07-12	Fabrication de matériaux semi-conducteurs monocristallins
DE102011002599A1 (de)	2012-07-12	Verfahren zur Herstellung eines Silizium-Ingots
DE2654063A1 (de)	1977-07-07	Verfahren zum herstellen eines bandes aus polykristallinem halbleitermaterial
DE3726171A1 (de)	1988-02-11	Verfahren und vorrichtung zur reinigung von silicium
DE2636348A1 (de)	1978-02-16	Verfahren zur herstellung von reinem, elementarem halbleitermaterial
EP0160294B1 (fr)	1988-10-12	Procédé de séparation de produits de réaction solides du silicium produit au four à arc
CH653714A5 (de)	1986-01-15	Verfahren zur herstellung von silicium-einkristallen.
EP2321220B1 (fr)	2016-04-20	Procédé d'élimination d'impuretés non métalliques de silicium métallurgique
EP0010307B1 (fr)	1982-05-12	Procédé de protection de produits carbonifères
DE3013045A1 (de)	1980-10-16	Verfahren zur herstellung massiver, perfekter einkristallbirnen aus gadolinium-gallium-granat
DE2160670A1 (de)	1972-06-22	Verfahren zur Herstellung von polykristallinen Halbleiterkörpern
DE3220341A1 (de)	1983-12-01	Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3611950A1 (de)	1987-10-22	Verfahren zum abtrennen von festen raktionsprodukten, wie kohlenstoff, aus carbothermisch erzeugtem silizium
EP2558233B1 (fr)	2019-01-02	Fabrication d'un matériau semi-conducteur cristallin
DE19845450B4 (de)	2008-11-13	Vorrichtung zur Herstellung von Siliciumcarbid-Pulver und Verfahren zur Herstellung von Siliciumcarbid-Pulver unter Verwendung dieser Vorrichtung
DE3220343A1 (de)	1983-12-01	Verfahren zum herstellen polykristalliner siliciumstaebe
EP3253908A1 (fr)	2017-12-13	Procédé de production de silicium polycristallin
DE2131407B2 (fr)	1980-12-11
AT220593B (de)	1962-04-10	Verfahren und Vorrichtung zur Herstellung von homogenen, fahlerfreien Blöcken aus reinem Silizium