CL2016002444A1 - Celda solar con una pluralidad de subceldas combinadas con una estructura de metalizacion. - Google Patents

Celda solar con una pluralidad de subceldas combinadas con una estructura de metalizacion.

Info

Publication number
CL2016002444A1
CL2016002444A1 CL2016002444A CL2016002444A CL2016002444A1 CL 2016002444 A1 CL2016002444 A1 CL 2016002444A1 CL 2016002444 A CL2016002444 A CL 2016002444A CL 2016002444 A CL2016002444 A CL 2016002444A CL 2016002444 A1 CL2016002444 A1 CL 2016002444A1
Authority
CL
Chile
Prior art keywords
metalization
cells combined
semi
solar cell
portions
Prior art date
Application number
CL2016002444A
Other languages
English (en)
Inventor
Peter John Cousins
Gabriel Harley
Michael Morse
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of CL2016002444A1 publication Critical patent/CL2016002444A1/es

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

<p>CELDAS SOLARES QUE TIENEN UNA PLURALIDAD DE SUBCELDAS COMBINADAS CON ESTRUCTURAS DE METALIZACION Y METODOS DE INDIVIDUALIZACION PARA FORMAR CELDAS SOLARES QUE TIENEN UNA PLURALIDAD DE SUBCELDAS COMBINADAS CON ESTRUCTURAS DE METALIZACION, EN UN EJEMPLO, UNA CELDA SOLAR INCLUYE UNA PLURALIDAD DE SUBCELDAS, CADA UNA DE LAS SUBCELDAS TIENE UNA PORCION DEL SUBSTRATO DEL SEMICONDUCTOR INDIVIDUALIZADA Y SEPARADA FISICAMENTE, LAS PORCIONES ADYACENTES DE LAS PORCIONES DE SUSTRATO SEMICONDUCTOR INDIVIDUALIZADAS Y SEPARADAS FISICAMENTE TIENEN UNA RANURA ENTRE ELLAS, LA CELDA SOLAR TAMBIEN INCLUYE UNA ESTRUCTURA DE METALIZACION MONOLITICA, UNA PORCION DE LA ESTRUCTURA DE METALIZACION MONOLITICA SE ACOPLA A UNA DE LA PLURALIDAD DE SUBCELDAS, LA RANURA ENTRE LAS PORCIONES ADYACENTES DE LAS PORCIONES DEL SUSTRATO DEL SEMICONDUCTOR SEPARADAS E INDIVIDUALIZADAS FISICAMENTE EXPONE UNA PORCION DE LA ESTRUCTURA DE METALIZACION MONOLITICA.</p>
CL2016002444A 2014-03-28 2016-09-28 Celda solar con una pluralidad de subceldas combinadas con una estructura de metalizacion. CL2016002444A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/229,543 US9496437B2 (en) 2014-03-28 2014-03-28 Solar cell having a plurality of sub-cells coupled by a metallization structure

Publications (1)

Publication Number Publication Date
CL2016002444A1 true CL2016002444A1 (es) 2017-02-24

Family

ID=54191554

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016002444A CL2016002444A1 (es) 2014-03-28 2016-09-28 Celda solar con una pluralidad de subceldas combinadas con una estructura de metalizacion.

Country Status (13)

Country Link
US (4) US9496437B2 (es)
EP (1) EP3123528B1 (es)
JP (2) JP6736828B2 (es)
KR (1) KR20160140774A (es)
CN (2) CN106463555B (es)
AU (1) AU2015236210A1 (es)
BR (1) BR112016022560A2 (es)
CL (1) CL2016002444A1 (es)
MX (1) MX2016012344A (es)
PH (1) PH12016501676A1 (es)
SG (1) SG11201607956YA (es)
TW (1) TW201601336A (es)
WO (1) WO2015148575A1 (es)

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US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10600922B2 (en) 2014-03-28 2020-03-24 Sunpower Corporation Solar cells with tunnel dielectrics
US10840392B2 (en) 2014-03-28 2020-11-17 Sunpower Corporation Solar cells with tunnel dielectrics
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules

Also Published As

Publication number Publication date
EP3123528B1 (en) 2021-07-14
JP2017509140A (ja) 2017-03-30
JP7078213B2 (ja) 2022-05-31
JP6736828B2 (ja) 2020-08-05
EP3123528A4 (en) 2017-08-16
EP3123528A1 (en) 2017-02-01
CN106463555A (zh) 2017-02-22
CN109103276A (zh) 2018-12-28
US20170062640A1 (en) 2017-03-02
US9496437B2 (en) 2016-11-15
WO2015148575A1 (en) 2015-10-01
TW201601336A (zh) 2016-01-01
MX2016012344A (es) 2016-12-02
US11398576B2 (en) 2022-07-26
JP2020109863A (ja) 2020-07-16
US9893222B2 (en) 2018-02-13
US20180130920A1 (en) 2018-05-10
SG11201607956YA (en) 2016-10-28
BR112016022560A2 (pt) 2017-08-15
KR20160140774A (ko) 2016-12-07
PH12016501676B1 (en) 2017-02-06
CN109103276B (zh) 2023-03-24
CN106463555B (zh) 2018-08-21
US20150280028A1 (en) 2015-10-01
US20200279967A1 (en) 2020-09-03
PH12016501676A1 (en) 2017-02-06
AU2015236210A1 (en) 2016-07-14
US10608133B2 (en) 2020-03-31

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