CN100347321C - 高热导率的铜合金材料 - Google Patents
高热导率的铜合金材料 Download PDFInfo
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- CN100347321C CN100347321C CNB2003101109094A CN200310110909A CN100347321C CN 100347321 C CN100347321 C CN 100347321C CN B2003101109094 A CNB2003101109094 A CN B2003101109094A CN 200310110909 A CN200310110909 A CN 200310110909A CN 100347321 C CN100347321 C CN 100347321C
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- 239000000956 alloy Substances 0.000 title claims abstract description 26
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 13
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 abstract description 14
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000003723 Smelting Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 12
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000010946 fine silver Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910011687 LiCu Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种高热导率的铜合金材料,它由按重量百分比计的以下组分组成:0.0010%—0.0050%的Li,0.10%—0.20%的Te,余量为Cu。它以纯铜、纯锂、纯碲为原料经真空熔炼制得。其热导率比纯紫铜高28%,比纯银高21%,电导率≥100%(IACS)。
Description
一、技术领域
本发明涉及合金,特别是高热导率和高电导率的铜合金材料制造领域。
二、背景技术
当今时代电子技术突飞猛进,电子元器件飞速发展,如一只晶片上集成的晶体管越来越多,从大规模集成电路已进入到超大规模集成电路。单位面积上的晶体管越多,耗能就越多,散热就成了大问题。预计在2005年一只晶片上集成2亿个晶体管,它就会热得象“核反应堆”,到2010年若一只晶片上集成的晶体管翻一番,就会热到火箭发射时高温气体喷嘴的水平,到2015年若晶体管集成数目再翻番,就会热得与太阳表面温度一样高。因此,超大规模芯片的耗能和散热将成为一个根本性限制,并成为制约整个信息产业乃至全球经济发展的大问题。又如通讯系统,功能越来越多,数据传送越来越快,数码就越来越庞大,耗能越来越巨大,所产生的热量就十分巨大,热能不能迅速散去,热量积累起来,就会烧坏机器。再如地对空导弹系统,假设原来同时控制三枚导弹,现同时控制6枚导弹,码子至少增加一倍,耗能至少翻一番,倘若热量不迅速散去,机器很快就会热得无法工作,甚至烧坏。因此,散热成为各种高科技、军事产品发展的大敌。
在现有导热金属材料中,纯银的热导率最高(λ=405~414wm-1k-1),纯紫铜次之(λ=388~391wm-1k-1),但是,现有常规导热材料正面临飞速发展的高新技术产业,尤其是电子业的挑战,已不能满足对高导热材料的要求。
三、发明内容
本发明的目的是提供一种高热导率的铜合金材料,它具有比纯紫铜、甚至比纯银更好的导热性能。本发明的目的通过由以下技术方案加以实现:一种高热导率的铜合金材料,它由按重量百分比计的以下组分组成:0.0010%-0.0050%的Li,0.10%-0.20%的Te,余量为Cu。
本发明的工艺过程如下:根据上述合金中各组分的含量要求,采用纯铜、纯锂和纯碲为原料,分别经过真空熔炼,分别制出LiCu合金和TeCu合金,再将上述两合金通过真空熔炼,制得含量合符要求的LiTeCu合金。
经微观研究及机理分析得知,Te在铜中以化合物的形式溶于铜中,呈链状平行排,沿晶界和晶内分布,Li起脱氧作用和渗入Te元素后,成线状分布,产生第二相,呈沉淀强化,大大提高了合金的热导率和电导率。本发明经西南交通大学分析测试中心检测其热导率λ=491~502wm-1k-1(SI制)。该材料热导率比纯紫铜(λ=388~391wm-1k-1)高28%,比纯银高21%左右(纯银的热导率最高,纯紫铜次之)。经中国测试技术研究院检测,其电导率≥100%IACS。
四、具体实施方式
实旋例1:按照上述工艺过程,第一步:真空熔炼制得LiCu及TeCu合金,第二步:将两合金真空熔炼制得下述重量百分比含量的铜合金材料:
Li 0.0020%
Te 0.12%
Cu 余量
该合金热导率498wm-1k-1(SI),电导率102.1%(IACS)。
实旋例2:工艺过程同上,真空熔炼制得下述重量百分比含量的铜合金材料:
Li 0.0030%
Te 0.15%
Cu 余量
该合金热导率502wm-1k-1(SI),电导率102.4%(IACS)。
实旋例3:工艺过程同上,真空熔炼制得下述重量百分比含量的铜合金材料:
Li 0.0040%
Te 0.18%
Cu 余量
该合金热导率491wm-1k-1(SI),电导率101.5%(IACS)。
Claims (4)
1、一种铜合金材料,其特征是,它由按重量百分比计的以下组分组成:
0.0010%-0.0050%的Li,
0.10%-0.20%的Te,
余量为Cu。
2、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0020%的Li,
0.12%的Te,
余量为Cu。
3、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0030%的Li,
0.15%的Te,
余量为Cu。
4、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0040%的Li,
0.18%的Te,
余量为Cu。
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101109094A CN100347321C (zh) | 2003-11-11 | 2003-11-11 | 高热导率的铜合金材料 |
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| CNB2003101109094A CN100347321C (zh) | 2003-11-11 | 2003-11-11 | 高热导率的铜合金材料 |
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| Publication Number | Publication Date |
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| CN1544672A CN1544672A (zh) | 2004-11-10 |
| CN100347321C true CN100347321C (zh) | 2007-11-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101768682B (zh) * | 2010-02-08 | 2011-10-05 | 四川鑫炬矿业资源开发股份有限公司 | 一种高导易切削铜硒锂合金材料 |
| CN105112714A (zh) * | 2015-09-08 | 2015-12-02 | 周欢 | 一种高导铜合金材料 |
| CN105112721A (zh) * | 2015-09-08 | 2015-12-02 | 周欢 | 一种铜稀土合金材料 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4347413A (en) * | 1978-07-28 | 1982-08-31 | Hitachi, Ltd. | Electrodes of vacuum circuit breaker |
| US4499009A (en) * | 1981-12-21 | 1985-02-12 | Mitsubishi Denki Kabushiki Kaisha | Electrode composition for vacuum switch |
| US4717436A (en) * | 1985-03-27 | 1988-01-05 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device |
| CN1410569A (zh) * | 2002-09-18 | 2003-04-16 | 四川鑫炬矿业资源开发股份有限公司 | 接触网导线用铜合金材料 |
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2003
- 2003-11-11 CN CNB2003101109094A patent/CN100347321C/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4347413A (en) * | 1978-07-28 | 1982-08-31 | Hitachi, Ltd. | Electrodes of vacuum circuit breaker |
| US4499009A (en) * | 1981-12-21 | 1985-02-12 | Mitsubishi Denki Kabushiki Kaisha | Electrode composition for vacuum switch |
| US4717436A (en) * | 1985-03-27 | 1988-01-05 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device |
| CN1410569A (zh) * | 2002-09-18 | 2003-04-16 | 四川鑫炬矿业资源开发股份有限公司 | 接触网导线用铜合金材料 |
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