CN100347321C - 高热导率的铜合金材料 - Google Patents

高热导率的铜合金材料 Download PDF

Info

Publication number
CN100347321C
CN100347321C CNB2003101109094A CN200310110909A CN100347321C CN 100347321 C CN100347321 C CN 100347321C CN B2003101109094 A CNB2003101109094 A CN B2003101109094A CN 200310110909 A CN200310110909 A CN 200310110909A CN 100347321 C CN100347321 C CN 100347321C
Authority
CN
China
Prior art keywords
alloy material
pure
heat conductivity
alloy
high heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003101109094A
Other languages
English (en)
Other versions
CN1544672A (zh
Inventor
罗毅
黄庆生
程志毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHENGDU JINGZUO TECHNOLOGY DEVELOPMENT Co Ltd
Original Assignee
CHENGDU JINGZUO TECHNOLOGY DEVELOPMENT Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHENGDU JINGZUO TECHNOLOGY DEVELOPMENT Co Ltd filed Critical CHENGDU JINGZUO TECHNOLOGY DEVELOPMENT Co Ltd
Priority to CNB2003101109094A priority Critical patent/CN100347321C/zh
Publication of CN1544672A publication Critical patent/CN1544672A/zh
Application granted granted Critical
Publication of CN100347321C publication Critical patent/CN100347321C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Conductive Materials (AREA)

Abstract

一种高热导率的铜合金材料,它由按重量百分比计的以下组分组成:0.0010%—0.0050%的Li,0.10%—0.20%的Te,余量为Cu。它以纯铜、纯锂、纯碲为原料经真空熔炼制得。其热导率比纯紫铜高28%,比纯银高21%,电导率≥100%(IACS)。

Description

高热导率的铜合金材料
一、技术领域
本发明涉及合金,特别是高热导率和高电导率的铜合金材料制造领域。
二、背景技术
当今时代电子技术突飞猛进,电子元器件飞速发展,如一只晶片上集成的晶体管越来越多,从大规模集成电路已进入到超大规模集成电路。单位面积上的晶体管越多,耗能就越多,散热就成了大问题。预计在2005年一只晶片上集成2亿个晶体管,它就会热得象“核反应堆”,到2010年若一只晶片上集成的晶体管翻一番,就会热到火箭发射时高温气体喷嘴的水平,到2015年若晶体管集成数目再翻番,就会热得与太阳表面温度一样高。因此,超大规模芯片的耗能和散热将成为一个根本性限制,并成为制约整个信息产业乃至全球经济发展的大问题。又如通讯系统,功能越来越多,数据传送越来越快,数码就越来越庞大,耗能越来越巨大,所产生的热量就十分巨大,热能不能迅速散去,热量积累起来,就会烧坏机器。再如地对空导弹系统,假设原来同时控制三枚导弹,现同时控制6枚导弹,码子至少增加一倍,耗能至少翻一番,倘若热量不迅速散去,机器很快就会热得无法工作,甚至烧坏。因此,散热成为各种高科技、军事产品发展的大敌。
在现有导热金属材料中,纯银的热导率最高(λ=405~414wm-1k-1),纯紫铜次之(λ=388~391wm-1k-1),但是,现有常规导热材料正面临飞速发展的高新技术产业,尤其是电子业的挑战,已不能满足对高导热材料的要求。
三、发明内容
本发明的目的是提供一种高热导率的铜合金材料,它具有比纯紫铜、甚至比纯银更好的导热性能。本发明的目的通过由以下技术方案加以实现:一种高热导率的铜合金材料,它由按重量百分比计的以下组分组成:0.0010%-0.0050%的Li,0.10%-0.20%的Te,余量为Cu。
本发明的工艺过程如下:根据上述合金中各组分的含量要求,采用纯铜、纯锂和纯碲为原料,分别经过真空熔炼,分别制出LiCu合金和TeCu合金,再将上述两合金通过真空熔炼,制得含量合符要求的LiTeCu合金。
经微观研究及机理分析得知,Te在铜中以化合物的形式溶于铜中,呈链状平行排,沿晶界和晶内分布,Li起脱氧作用和渗入Te元素后,成线状分布,产生第二相,呈沉淀强化,大大提高了合金的热导率和电导率。本发明经西南交通大学分析测试中心检测其热导率λ=491~502wm-1k-1(SI制)。该材料热导率比纯紫铜(λ=388~391wm-1k-1)高28%,比纯银高21%左右(纯银的热导率最高,纯紫铜次之)。经中国测试技术研究院检测,其电导率≥100%IACS。
四、具体实施方式
实旋例1:按照上述工艺过程,第一步:真空熔炼制得LiCu及TeCu合金,第二步:将两合金真空熔炼制得下述重量百分比含量的铜合金材料:
Li    0.0020%
Te    0.12%
Cu    余量
该合金热导率498wm-1k-1(SI),电导率102.1%(IACS)。
实旋例2:工艺过程同上,真空熔炼制得下述重量百分比含量的铜合金材料:
Li    0.0030%
Te    0.15%
Cu    余量
该合金热导率502wm-1k-1(SI),电导率102.4%(IACS)。
实旋例3:工艺过程同上,真空熔炼制得下述重量百分比含量的铜合金材料:
Li    0.0040%
Te    0.18%
Cu    余量
该合金热导率491wm-1k-1(SI),电导率101.5%(IACS)。

Claims (4)

1、一种铜合金材料,其特征是,它由按重量百分比计的以下组分组成:
0.0010%-0.0050%的Li,
0.10%-0.20%的Te,
余量为Cu。
2、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0020%的Li,
0.12%的Te,
余量为Cu。
3、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0030%的Li,
0.15%的Te,
余量为Cu。
4、根据权利要求1所述的铜合金材料,其特征是它由以下组分组成:
0.0040%的Li,
0.18%的Te,
余量为Cu。
CNB2003101109094A 2003-11-11 2003-11-11 高热导率的铜合金材料 Expired - Fee Related CN100347321C (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2003101109094A CN100347321C (zh) 2003-11-11 2003-11-11 高热导率的铜合金材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2003101109094A CN100347321C (zh) 2003-11-11 2003-11-11 高热导率的铜合金材料

Publications (2)

Publication Number Publication Date
CN1544672A CN1544672A (zh) 2004-11-10
CN100347321C true CN100347321C (zh) 2007-11-07

Family

ID=34335808

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101109094A Expired - Fee Related CN100347321C (zh) 2003-11-11 2003-11-11 高热导率的铜合金材料

Country Status (1)

Country Link
CN (1) CN100347321C (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101768682B (zh) * 2010-02-08 2011-10-05 四川鑫炬矿业资源开发股份有限公司 一种高导易切削铜硒锂合金材料
CN105112714A (zh) * 2015-09-08 2015-12-02 周欢 一种高导铜合金材料
CN105112721A (zh) * 2015-09-08 2015-12-02 周欢 一种铜稀土合金材料

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347413A (en) * 1978-07-28 1982-08-31 Hitachi, Ltd. Electrodes of vacuum circuit breaker
US4499009A (en) * 1981-12-21 1985-02-12 Mitsubishi Denki Kabushiki Kaisha Electrode composition for vacuum switch
US4717436A (en) * 1985-03-27 1988-01-05 Mitsubishi Kinzoku Kabushiki Kaisha Wire for bonding a semiconductor device
CN1410569A (zh) * 2002-09-18 2003-04-16 四川鑫炬矿业资源开发股份有限公司 接触网导线用铜合金材料

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347413A (en) * 1978-07-28 1982-08-31 Hitachi, Ltd. Electrodes of vacuum circuit breaker
US4499009A (en) * 1981-12-21 1985-02-12 Mitsubishi Denki Kabushiki Kaisha Electrode composition for vacuum switch
US4717436A (en) * 1985-03-27 1988-01-05 Mitsubishi Kinzoku Kabushiki Kaisha Wire for bonding a semiconductor device
CN1410569A (zh) * 2002-09-18 2003-04-16 四川鑫炬矿业资源开发股份有限公司 接触网导线用铜合金材料

Also Published As

Publication number Publication date
CN1544672A (zh) 2004-11-10

Similar Documents

Publication Publication Date Title
Chu et al. Electrode interface optimization advances conversion efficiency and stability of thermoelectric devices
Yin et al. CALPHAD accelerated design of advanced full-Zintl thermoelectric device
Fu et al. Interface kinetic manipulation enabling efficient and reliable Mg3Sb2 thermoelectrics
Dashevsky et al. Feasibility of high performance in p‐type Ge1− xBixTe materials for thermoelectric modules
Mouko et al. Manufacturing and performances of silicide-based thermoelectric modules
Kim et al. SnSe: The rise of the ultrahigh thermoelectric performance material
CN102918661A (zh) 形成与碲化镉太阳能电池的后接触的方法
Ma et al. Elevating thermoelectric performance in the sub-ambient temperature range for electronic refrigeration
CN100347321C (zh) 高热导率的铜合金材料
Xiao et al. High-performance Ag2Se/methyl cellulose thermoelectric composites for flexible power generators
Elseman et al. Influence of nitrogen atmosphere one-step heating assisted the solution processing of Kesterite Cu2ZnSnS4 as hole extraction on the efficacy of the inverted perovskite solar cells
Jing et al. Interfacial reaction and shear strength of SnAgCu/Ni/Bi2Te3-based TE materials during aging
Bhuiyan et al. Opportunities for thermoelectric generators in supporting a low carbon economy
Cheng et al. Influences of different barrier films on microstructures and electrical properties of Bi2Te3-based joints
Li et al. Manipulating Anti‐Site Defects in α‐MgAgSb for Thermoelectric Cooling Enhancement
Lekbir et al. Performance and environmental impact analysis of thermoelectric generators through material selection and geometry optimization
Yang et al. General Screening Rules and Segmented Optimization Strategy for Efficient Thermoelectric Devices Validated by Mg3 (Sb, Bi) 2/Bi0. 5Sb1. 5Te3‐GeTe Module
Cheng et al. Fabrication of nanostructured skutterudite-based thermoelectric module and design of a maximum power point tracking system for the thermoelectric pile
Almufarij et al. Numerical analysis of the MASnI 3/CZT (Se 1− x S x) interface to boost the performance via band offset engineering
Li et al. Effect of glass frit composition on reliability of silver paste metallization in crystalline silicon solar cells
Wang et al. Output and mechanical performance of thermoelectric generator under transient heat loads
Zhao et al. Substitution energy-guided screening of diffusion barrier materials for Ag2Se-based thermoelectric coolers
Wu et al. Mechanisms of electrical fatigue and oxidation corrosion failure of micro-alloyed copper wire
Guo et al. First-principles calculations to investigate the structural stability, electronic and mechanical properties of CuGa2 and Cu9Ga4
Chen et al. Intermetallic growth and thermal impedance at the In32. 5Bi16. 5Sn/Cu interface

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee