CN100492599C - 真空处理装置 - Google Patents

真空处理装置 Download PDF

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Publication number
CN100492599C
CN100492599C CNB2005800219785A CN200580021978A CN100492599C CN 100492599 C CN100492599 C CN 100492599C CN B2005800219785 A CNB2005800219785 A CN B2005800219785A CN 200580021978 A CN200580021978 A CN 200580021978A CN 100492599 C CN100492599 C CN 100492599C
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CN
China
Prior art keywords
chamber
processing chamber
processing
input
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2005800219785A
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English (en)
Chinese (zh)
Other versions
CN1977363A (zh
Inventor
高桥诚一
宫谷武尚
林秀夫
佐藤真幸
堤贤吾
小野洋平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN1977363A publication Critical patent/CN1977363A/zh
Application granted granted Critical
Publication of CN100492599C publication Critical patent/CN100492599C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CNB2005800219785A 2004-06-30 2005-06-28 真空处理装置 Expired - Lifetime CN100492599C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004193569 2004-06-30
JP193569/2004 2004-06-30

Publications (2)

Publication Number Publication Date
CN1977363A CN1977363A (zh) 2007-06-06
CN100492599C true CN100492599C (zh) 2009-05-27

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800219785A Expired - Lifetime CN100492599C (zh) 2004-06-30 2005-06-28 真空处理装置

Country Status (7)

Country Link
US (1) US7682481B2 (2)
JP (1) JP4673308B2 (2)
KR (1) KR100808820B1 (2)
CN (1) CN100492599C (2)
DE (1) DE112005001539B4 (2)
TW (1) TW200607013A (2)
WO (1) WO2006003880A1 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240150932A1 (en) * 2021-03-10 2024-05-09 Siltronic Ag Method of producing epitaxial layer wafers in a chamber of a deposition reactor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法
CN1468444A (zh) * 2000-10-02 2004-01-14 ���������ƴ���ʽ���� 真空处理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP3453223B2 (ja) * 1994-08-19 2003-10-06 東京エレクトロン株式会社 処理装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
CN1468444A (zh) * 2000-10-02 2004-01-14 ���������ƴ���ʽ���� 真空处理装置
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240150932A1 (en) * 2021-03-10 2024-05-09 Siltronic Ag Method of producing epitaxial layer wafers in a chamber of a deposition reactor
US12503791B2 (en) * 2021-03-10 2025-12-23 Siltronic Ag Method of producing epitaxial layer wafers in a chamber of a deposition reactor

Also Published As

Publication number Publication date
TW200607013A (en) 2006-02-16
DE112005001539T5 (de) 2007-05-16
JP4673308B2 (ja) 2011-04-20
US7682481B2 (en) 2010-03-23
US20070151669A1 (en) 2007-07-05
DE112005001539B4 (de) 2013-04-25
JPWO2006003880A1 (ja) 2008-04-17
KR100808820B1 (ko) 2008-03-03
CN1977363A (zh) 2007-06-06
WO2006003880A1 (ja) 2006-01-12
TWI380356B (2) 2012-12-21
KR20070032968A (ko) 2007-03-23

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Granted publication date: 20090527