TW200607013A - Vacuum treatment device - Google Patents

Vacuum treatment device

Info

Publication number
TW200607013A
TW200607013A TW094121933A TW94121933A TW200607013A TW 200607013 A TW200607013 A TW 200607013A TW 094121933 A TW094121933 A TW 094121933A TW 94121933 A TW94121933 A TW 94121933A TW 200607013 A TW200607013 A TW 200607013A
Authority
TW
Taiwan
Prior art keywords
chamber
treatment chamber
carrying
treatment
treatment device
Prior art date
Application number
TW094121933A
Other languages
English (en)
Chinese (zh)
Other versions
TWI380356B (2
Inventor
Seiichi Takahashi
Takehisa Miyaya
Soo-Boo Lim
Masayuki Satou
Kengo Tsutsumi
Yohei Ono
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200607013A publication Critical patent/TW200607013A/zh
Application granted granted Critical
Publication of TWI380356B publication Critical patent/TWI380356B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW094121933A 2004-06-30 2005-06-29 Vacuum treatment device TW200607013A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004193569 2004-06-30

Publications (2)

Publication Number Publication Date
TW200607013A true TW200607013A (en) 2006-02-16
TWI380356B TWI380356B (2) 2012-12-21

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121933A TW200607013A (en) 2004-06-30 2005-06-29 Vacuum treatment device

Country Status (7)

Country Link
US (1) US7682481B2 (2)
JP (1) JP4673308B2 (2)
KR (1) KR100808820B1 (2)
CN (1) CN100492599C (2)
DE (1) DE112005001539B4 (2)
TW (1) TW200607013A (2)
WO (1) WO2006003880A1 (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
EP4056740A1 (de) * 2021-03-10 2022-09-14 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP3453223B2 (ja) * 1994-08-19 2003-10-06 東京エレクトロン株式会社 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Also Published As

Publication number Publication date
CN100492599C (zh) 2009-05-27
DE112005001539T5 (de) 2007-05-16
JP4673308B2 (ja) 2011-04-20
US7682481B2 (en) 2010-03-23
US20070151669A1 (en) 2007-07-05
DE112005001539B4 (de) 2013-04-25
JPWO2006003880A1 (ja) 2008-04-17
KR100808820B1 (ko) 2008-03-03
CN1977363A (zh) 2007-06-06
WO2006003880A1 (ja) 2006-01-12
TWI380356B (2) 2012-12-21
KR20070032968A (ko) 2007-03-23

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent