CN101556830B - Shift register and grid electrode driving device thereof - Google Patents

Shift register and grid electrode driving device thereof Download PDF

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CN101556830B
CN101556830B CN2008101037830A CN200810103783A CN101556830B CN 101556830 B CN101556830 B CN 101556830B CN 2008101037830 A CN2008101037830 A CN 2008101037830A CN 200810103783 A CN200810103783 A CN 200810103783A CN 101556830 B CN101556830 B CN 101556830B
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thin film
film transistor
output terminal
shift register
gate
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CN101556830A (en
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韩承佑
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BOE Technology Group Co Ltd
K Tronics Suzhou Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Abstract

本发明涉及一种移位寄存器及其栅极驱动装置。移位寄存器包括直接沉积在阵列基板上的六个薄膜晶体管,其中第一薄膜晶体管的栅极与源极之间设置电容,其漏极与第一时钟信号输出端连接;第二薄膜晶体管的栅极与第三薄膜晶体管的栅极连接;第四薄膜晶体管的栅极与其漏极连接,其漏极与移位起始信号输出端或上一级输出端连接,其源极与第一薄膜晶体管的栅极连接;第五薄膜晶体管的栅极与第一时钟信号输出端连接;第六薄膜晶体管的栅极与第二时钟信号输出端连接。本发明保持了本级输出端的无效状态,栅线不会出现漂浮,也不会受到与栅线相连的其它噪声电压的影响,移位寄存器可靠地保持无效状态,不会导致错误操作。

Figure 200810103783

The invention relates to a shift register and a gate driving device thereof. The shift register includes six thin film transistors directly deposited on the array substrate, wherein a capacitor is set between the gate and the source of the first thin film transistor, and its drain is connected to the first clock signal output terminal; the gate of the second thin film transistor The pole is connected to the gate of the third thin film transistor; the gate of the fourth thin film transistor is connected to the drain, the drain is connected to the shift start signal output terminal or the output terminal of the previous stage, and the source is connected to the first thin film transistor The gate of the fifth thin film transistor is connected to the first clock signal output end; the gate of the sixth thin film transistor is connected to the second clock signal output end. The invention maintains the invalid state of the output end of the current stage, the gate line will not float, and will not be affected by other noise voltages connected to the gate line, and the shift register will reliably maintain the invalid state without causing erroneous operations.

Figure 200810103783

Description

移位寄存器及其栅极驱动装置Shift register and its gate driving device

技术领域technical field

本发明涉及一种移位寄存器及其栅极驱动装置,特别是一种液晶显示器的移位寄存器及其栅极驱动装置。 The invention relates to a shift register and a gate drive device thereof, in particular to a shift register of a liquid crystal display and a gate drive device thereof. the

背景技术Background technique

薄膜晶体管液晶显示器(TFT-LCD)具有重量轻、厚度薄和耗电小等特点,广泛应用于手机、显示器、电视机等装置中。 Thin film transistor liquid crystal display (TFT-LCD) has the characteristics of light weight, thin thickness and low power consumption, and is widely used in mobile phones, monitors, televisions and other devices. the

为了显示图像,TFT-LCD用m×n点排列的逐行扫描矩阵显示。TFT-LCD驱动器主要包括栅极驱动器和数据驱动器,数据驱动器将输入的显示数据及时钟信号定时顺序锁存,转换成模拟信号后输入到液晶面板的数据线,栅极驱动器将输入的时钟信号通过移位寄存器转换,切换成开启/关断电压,顺次施加到液晶面板的栅线上。在有源矩阵薄膜晶体管液晶显示器(AMTFT-LCD)中,栅极驱动器中的移位寄存器用于产生扫描栅线的扫描信号,数据驱动器中的移位寄存器用于选择数据线模块。 In order to display images, TFT-LCD displays with a progressive scan matrix of m×n dots. The TFT-LCD driver mainly includes a gate driver and a data driver. The data driver latches the input display data and clock signals in a timing sequence, converts them into analog signals and inputs them to the data lines of the LCD panel, and the gate driver passes the input clock signals through The shift register is converted and switched to turn on/off voltage, which is applied to the grid lines of the liquid crystal panel in sequence. In an active matrix thin film transistor liquid crystal display (AMTFT-LCD), the shift register in the gate driver is used to generate a scan signal for scanning the gate lines, and the shift register in the data driver is used to select the data line module. the

在现有技术移位寄存器中,移位寄存器由数级(stage)连接构成,第一级中起始信号接于输入端,根据各级的输出信号,按顺序选择数个栅线。移位寄存器工作中,要求其各级在有效(inable)状态以外的其它全部时间均保持无效(disable)状态,但现有技术移位寄存器使栅线漂浮(floating),同时受噪声电压影响,移位寄存器的各级不能保持无效状态,导致错误操作。图4为现有技术移位寄存器的结构示意图,包括四个薄膜晶体管,其中第一薄膜晶体管M1的漏极连接时钟信号输出端CKV,栅极与源极之间设置电容Cb,源极与第二薄膜晶体管M2的漏极连接,且与本级输出端OUTn连接;第二薄膜晶体管M2的源极与电源负端VSS连接,栅极与第三薄膜晶体管M3 的栅极连接,且与下一级输出端OUTn+1连接;第三薄膜晶体管M3的源极与电源负端VSS连接,漏极分别与第一薄膜晶体管M1的栅极和第四薄膜晶体管M4的源极连接;第四薄膜晶体管M4的漏极与其栅极连接,且与上一级输出端OUTn-1连接。如图4所示,在第一薄膜晶体管M1和第二薄膜晶体管M2为关闭的无效状态时,栅线会出现漂浮,因此,受到与栅线相连的其它噪声电压的影响,移位寄存器不能保持无效状态,并导致错误操作。 In the shift register in the prior art, the shift register is composed of stages. The start signal of the first stage is connected to the input terminal, and several gate lines are selected in order according to the output signals of each stage. In the operation of the shift register, it is required that all stages of the shift register remain in the disabled state at all times other than the effective (inable) state, but the shift register in the prior art makes the gate line floating (floating), and is affected by the noise voltage at the same time. The stages of the shift register cannot remain inactive, resulting in erroneous operation. 4 is a schematic structural diagram of a shift register in the prior art, which includes four thin film transistors, wherein the drain of the first thin film transistor M1 is connected to the clock signal output terminal CKV, a capacitor Cb is set between the gate and the source, and the source is connected to the second TFT. The drain of the second thin film transistor M2 is connected to the output terminal OUTn of the current stage; the source of the second thin film transistor M2 is connected to the negative terminal VSS of the power supply, the gate is connected to the gate of the third thin film transistor M3, and connected to the next The stage output terminal OUTn+1 is connected; the source of the third thin film transistor M3 is connected to the negative power supply terminal VSS, and the drain is respectively connected to the gate of the first thin film transistor M1 and the source of the fourth thin film transistor M4; the fourth thin film transistor The drain of M4 is connected to its gate, and is connected to the output terminal OUTn-1 of the previous stage. As shown in Figure 4, when the first thin film transistor M1 and the second thin film transistor M2 are in the inactive state of being turned off, the gate line will float, therefore, the shift register cannot maintain Invalid state and results in erroneous operation. the

现有技术为了保持移位寄存器各级的无效状态防止错误操作,一般采用增加额外供电电路的方法,但该方法直接导致成本上升。 In the prior art, in order to maintain the invalid state of each stage of the shift register and prevent erroneous operations, a method of adding an extra power supply circuit is generally adopted, but this method directly leads to an increase in cost. the

发明内容Contents of the invention

本发明的目的是提供一种移位寄存器及其栅极驱动装置,有效克服现有移位寄存器栅极漂浮导致错误操作等技术缺陷。 The purpose of the present invention is to provide a shift register and a gate driving device thereof, which can effectively overcome technical defects such as gate floating of the existing shift register and other technical defects. the

为了实现上述目的,本发明提供了一种移位寄存器,包括直接沉积在阵列基板上的六个薄膜晶体管,其中六个薄膜晶体管分别为: In order to achieve the above object, the present invention provides a shift register, including six thin film transistors deposited directly on the array substrate, wherein the six thin film transistors are:

第一薄膜晶体管,其栅极与源极之间设置电容,其漏极与第一时钟信号输出端连接,其源极与本级输出端连接; The first thin film transistor has a capacitance between its gate and source, its drain is connected to the first clock signal output terminal, and its source is connected to the output terminal of the current stage;

第二薄膜晶体管,其栅极与下一级输出端连接,其漏极与本级输出端连接,其源极与电源负端连接; The gate of the second thin film transistor is connected to the output terminal of the next stage, its drain is connected to the output terminal of the current stage, and its source is connected to the negative terminal of the power supply;

第三薄膜晶体管,其栅极分别与第二薄膜晶体管的栅极和下一级输出端连接,其漏极与第一薄膜晶体管的栅极连接,其源极与电源负端连接; The gate of the third thin film transistor is respectively connected to the gate of the second thin film transistor and the output terminal of the next stage, its drain is connected to the gate of the first thin film transistor, and its source is connected to the negative terminal of the power supply;

第四薄膜晶体管,其栅极与其漏极连接,其漏极与移位起始信号输出端或上一级输出端连接,其源极分别与第一薄膜晶体管的栅极和第三薄膜晶体管的漏极连接; The gate of the fourth thin film transistor is connected to its drain, its drain is connected to the output terminal of the shift start signal or the output terminal of the previous stage, and its source is connected to the gate of the first thin film transistor and the gate of the third thin film transistor respectively. drain connection;

第五薄膜晶体管,其栅极与第一时钟信号输出端连接,其漏极分别与第四薄膜晶体管的栅极和漏极连接,其源极与本级输出端连接; The gate of the fifth thin film transistor is connected to the first clock signal output terminal, the drain is respectively connected to the gate and drain of the fourth thin film transistor, and the source is connected to the output terminal of the current stage;

第六薄膜晶体管,其栅极与第二时钟信号输出端连接,其漏极与第五薄膜晶体管的源极和本级输出端连接,其源极与电源负端连接。 The gate of the sixth thin film transistor is connected to the second clock signal output terminal, the drain is connected to the source of the fifth thin film transistor and the output terminal of the current stage, and the source is connected to the negative terminal of the power supply. the

为了实现上述目的,本发明还提供了一种栅极驱动装置,包括移位起始信号输出端和五个移位寄存器,其中五个移位寄存器分别与电源负端、第一时钟信号输出端和第二时钟信号输出端连接,并且所述五个移位寄存器中,第一移位寄存器与移位起始信号输出端连接,具有第一输出端;第二移位寄存器与第一移位寄存器的第一输出端连接,其第二输出端与所述第一移位寄存器连接;第三移位寄存器与第二移位寄存器的第二输出端连接,其第三输出端与所述第二移位寄存器连接;第四移位寄存器与第三移位寄存器的第三输出端连接,其第四输出端与所述第三移位寄存器连接;第五移位寄存器与第四移位寄存器的第四输出端连接,具有第五输出端。 In order to achieve the above object, the present invention also provides a gate drive device, including a shift start signal output terminal and five shift registers, wherein the five shift registers are respectively connected to the negative terminal of the power supply and the output terminal of the first clock signal. It is connected with the second clock signal output end, and among the five shift registers, the first shift register is connected with the shift start signal output end and has a first output end; the second shift register is connected with the first shift register The first output end of the register is connected, and its second output end is connected with the first shift register; the third shift register is connected with the second output end of the second shift register, and its third output end is connected with the first shift register. Two shift registers are connected; the fourth shift register is connected with the third output end of the third shift register, and its fourth output end is connected with the third shift register; the fifth shift register is connected with the fourth shift register The fourth output terminal of is connected, and has a fifth output terminal. the

本发明提出了一种直接沉积在阵列基板上的移位寄存器和栅极驱动装置,通过第一时钟信号输出端和第二时钟信号输出端依次输出的高电平有效保持了本级输出端的无效状态,栅线不会出现漂浮,也不会受到与栅线相连的其它噪声电压的影响,移位寄存器可靠地保持无效状态,不会导致错误操作。与现有技术为了防止错误操作采用增加额外供电电路的技术方案相比,本发明不需增加额外供电电路,具有成本低等特点。 The present invention proposes a shift register and a gate drive device directly deposited on the array substrate, and the high level sequentially output by the first clock signal output terminal and the second clock signal output terminal effectively maintains the invalidity of the output terminal of the current stage. state, the gate line will not float, and will not be affected by other noise voltages connected to the gate line, and the shift register will reliably maintain an invalid state without causing erroneous operations. Compared with the technical solution of adding an extra power supply circuit in order to prevent wrong operation in the prior art, the present invention does not need to add an extra power supply circuit, and has the characteristics of low cost and the like. the

下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。 The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. the

附图说明Description of drawings

图1a为本发明移位寄存器一种结构的等效电路图; Fig. 1 a is the equivalent circuit diagram of a kind of structure of shift register of the present invention;

图1b为本发明移位寄存器另一种结构的等效电路图; Fig. 1 b is the equivalent circuit diagram of another kind of structure of shift register of the present invention;

图2为本发明移位寄存器的工作时序图; Fig. 2 is the working sequence diagram of shift register of the present invention;

图3为本发明栅极驱动装置的结构示意图; FIG. 3 is a schematic structural diagram of a gate drive device of the present invention;

图4为现有技术移位寄存器的结构示意图。 FIG. 4 is a schematic structural diagram of a shift register in the prior art. the

具体实施方式Detailed ways

图1a为本发明移位寄存器一种结构的等效电路图,图1b为本发明移位寄存器另一种结构的等效电路图。如图1a、图1b所示,本发明移位寄存器的主体结构包括六个薄膜晶体管和相应的输入输出端,六个薄膜晶体管分别为第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5和第六薄膜晶体管T6,输入输出端分别为本级输出端OUTn、上一级输出端OUTn-1、下一级输出端OUTn+1、第一时钟信号输出端CKV1、第二时钟信号输出端CKV2、移位起始信号输出端STV和电源负端VSS。 Fig. 1a is an equivalent circuit diagram of one structure of the shift register of the present invention, and Fig. 1b is an equivalent circuit diagram of another structure of the shift register of the present invention. As shown in Figure 1a and Figure 1b, the main structure of the shift register of the present invention includes six thin film transistors and corresponding input and output terminals, and the six thin film transistors are respectively the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor The input and output terminals of the transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5 and the sixth thin film transistor T6 are respectively the output terminal OUTn of the current stage, the output terminal OUTn-1 of the previous stage, the output terminal OUTn+1 of the next stage, The first clock signal output terminal CKV1 , the second clock signal output terminal CKV2 , the shift start signal output terminal STV and the negative power supply terminal VSS. the

具体地,第一薄膜晶体管T1的栅极与源极之间设置电容Cb,其漏极与第一时钟信号输出端CKV1连接,其源极与本级输出端OUTn连接;第二薄膜晶体管T2的栅极与第三薄膜晶体管T3的栅极连接,并连接下一级输出端OUTn+1,其漏极与第一薄膜晶体管T1的源极连接,并连接本级输出端OUTn,其源极与电源负端VSS连接;第三薄膜晶体管T3的栅极与第二薄膜晶体管T2的栅极连接,并连接下一级输出端OUTn+1,其漏极分别与第一薄膜晶体管T1的栅极和第四薄膜晶体管T4的源极连接,其源极与电源负端VSS连接;第四薄膜晶体管T4的栅极与其漏极连接,其漏极分别与第五薄膜晶体管T5的漏极连接,并连接移位起始信号输出端STV或上一级输出端OUTn-1,其源极分别与第一薄膜晶体管T1的栅极和第三薄膜晶体管T3的漏极连接;第五薄膜晶体管T5的栅极与第一时钟信号输出端CKV1连接,其漏极分别与第四薄膜晶体管T4的栅极和漏极连接,其源极与第六薄膜晶体管T6的漏极连接,并连接本级输出端OUTn;第六薄膜晶体管T6的栅极与第二时钟信号输出端CKV2连接,其漏极与第五薄膜晶体管T5的源极连接,并连接本级输出端OUTn,其源极与电源负端VSS连接。由于本发明上述薄膜晶体管直接沉积在阵列基板上,因此上述源极和漏极是相对的,实际使用中可以将相应的源极设置成漏极,将相应的漏极设置成源极。 Specifically, a capacitor Cb is provided between the gate and source of the first thin film transistor T1, its drain is connected to the first clock signal output terminal CKV1, and its source is connected to the output terminal OUTn of the current stage; the second thin film transistor T2 The gate is connected to the gate of the third thin film transistor T3, and connected to the output terminal OUTn+1 of the next stage, and its drain is connected to the source of the first thin film transistor T1, and connected to the output terminal OUTn of the current stage, and its source is connected to The negative terminal VSS of the power supply is connected; the gate of the third thin film transistor T3 is connected to the gate of the second thin film transistor T2, and connected to the output terminal OUTn+1 of the next stage, and its drain is respectively connected to the gate of the first thin film transistor T1 and The source of the fourth thin film transistor T4 is connected, and its source is connected to the negative power supply terminal VSS; the gate of the fourth thin film transistor T4 is connected to its drain, and its drains are respectively connected to the drain of the fifth thin film transistor T5, and connected to The shift start signal output terminal STV or the output terminal OUTn-1 of the previous stage, its source is respectively connected to the gate of the first thin film transistor T1 and the drain of the third thin film transistor T3; the gate of the fifth thin film transistor T5 connected to the first clock signal output terminal CKV1, its drain connected to the gate and drain of the fourth thin film transistor T4, its source connected to the drain of the sixth thin film transistor T6, and connected to the output terminal OUTn of the current stage; The gate of the sixth thin film transistor T6 is connected to the second clock signal output terminal CKV2, the drain is connected to the source of the fifth thin film transistor T5, and connected to the output terminal OUTn of the current stage, and the source is connected to the negative power supply terminal VSS. Since the thin film transistor of the present invention is directly deposited on the array substrate, the source and the drain are opposite, and in actual use, the corresponding source can be set as the drain, and the corresponding drain can be set as the source. the

图2为本发明移位寄存器的工作时序图。如图1a和图2所示,对于位于 第一个位置的移位寄存器,首先第一时钟信号输出端CKV1输出高电平(第二时钟信号输出端CKV2为低电平),由于第五薄膜晶体管T5的栅极与第一时钟信号输出端CKV1连接,所以第五薄膜晶体管T5启动,第五薄膜晶体管T5的源极与漏极导通;由于第五薄膜晶体管T5的漏极与移位起始信号输出端STV连接,第五薄膜晶体管T5的源极与本级输出端OUTn连接,而此时移位起始信号输出端STV的输出为低电平,所以本级输出端OUTn也为低电平,保持无效状态。此过程中,由于下一级输出端OUTn+1为低电平,第二薄膜晶体管T2和第三薄膜晶体管T3处于截止状态;由于第二时钟信号输出端CKV2为低电平,第六薄膜晶体管T6处于截止状态。 Fig. 2 is a working sequence diagram of the shift register of the present invention. As shown in Figure 1a and Figure 2, for the shift register at the first position, first the first clock signal output terminal CKV1 outputs a high level (the second clock signal output terminal CKV2 is low level), because the fifth film The gate of the transistor T5 is connected to the first clock signal output terminal CKV1, so the fifth thin film transistor T5 is started, and the source and drain of the fifth thin film transistor T5 are turned on; The start signal output terminal STV is connected, the source of the fifth thin film transistor T5 is connected to the output terminal OUTn of the current stage, and at this time, the output of the shift start signal output terminal STV is low, so the output terminal OUTn of the current stage is also low level, remain inactive. During this process, since the output terminal OUTn+1 of the next stage is at low level, the second thin film transistor T2 and the third thin film transistor T3 are in an off state; since the second clock signal output terminal CKV2 is at low level, the sixth thin film transistor T6 is in cut-off state. the

随后第二时钟信号输出端CKV2输出高电平(第一时钟信号输出端CKV1为低电平),由于第六薄膜晶体管T6的栅极与第二时钟信号输出端CKV2连接,所以第六薄膜晶体管T6启动,第六薄膜晶体管T6的源极与漏极导通;由于第六薄膜晶体管T6的漏极与本级输出端OUTn连接,第六薄膜晶体管T6的源极与电源负端VSS连接,所以本级输出端OUTn也为低电平,保持无效状态。此过程中,移位起始信号输出端STV的输出为高电平,由于第四薄膜晶体管T4的栅极与其漏极连接,所以第四薄膜晶体管T4则启动,第四薄膜晶体管T4的源极与漏极导通,第四薄膜晶体管T4的源极也为高电平,由于此时本级输出端OUTn为低电平,所以处于高电平的第四薄膜晶体管T4的源极与低电平的本级输出端OUTn之间的电容Cb充电。由于下一级输出端OUTn+1为低电平,第二薄膜晶体管T2和第三薄膜晶体管T3处于截止状态。 Then the second clock signal output terminal CKV2 outputs a high level (the first clock signal output terminal CKV1 is low level), and since the gate of the sixth thin film transistor T6 is connected to the second clock signal output terminal CKV2, the sixth thin film transistor T6 T6 starts, and the source and drain of the sixth thin film transistor T6 are turned on; since the drain of the sixth thin film transistor T6 is connected to the output terminal OUTn of the current stage, and the source of the sixth thin film transistor T6 is connected to the negative terminal VSS of the power supply, so The output terminal OUTn of this stage is also low level and remains in an invalid state. During this process, the output of the shift start signal output terminal STV is at a high level, and since the gate of the fourth thin film transistor T4 is connected to its drain, the fourth thin film transistor T4 is activated, and the source of the fourth thin film transistor T4 It is connected with the drain, and the source of the fourth thin film transistor T4 is also at a high level. Since the output terminal OUTn of this stage is at a low level at this time, the source of the fourth thin film transistor T4 at a high level is connected to the low level. The capacitor Cb between the flat output terminals OUTn of the current stage is charged. Since the output terminal OUTn+1 of the next stage is at low level, the second thin film transistor T2 and the third thin film transistor T3 are in a cut-off state. the

随后第一时钟信号输出端CKV1输出高电平(第二时钟信号输出端CKV2和移位起始信号输出端STV为低电平),则第五薄膜晶体管T5处于导通状态,第四薄膜晶体管T4处于截止状态,电容Cb积累的电荷使第一薄膜晶体管T1的栅极处于高电平,第一薄膜晶体管T1则启动,第一薄膜晶体管T1的源极与漏极导通,第一时钟信号输出端CKV1输出的高电平由本级输出端OUTn输出。此过程中,由于下一级输出端OUTn+1为低电平,第二薄膜晶体管T2和 第三薄膜晶体管T3处于截止状态;由于第二时钟信号输出端CKV2为低电平,第六薄膜晶体管T6处于截止状态。 Then the first clock signal output terminal CKV1 outputs a high level (the second clock signal output terminal CKV2 and the shift start signal output terminal STV are low level), then the fifth thin film transistor T5 is in a conducting state, and the fourth thin film transistor T4 is in the off state, the charge accumulated in the capacitor Cb makes the gate of the first thin film transistor T1 at a high level, the first thin film transistor T1 is started, the source and drain of the first thin film transistor T1 are turned on, and the first clock signal The high level output by the output terminal CKV1 is output by the output terminal OUTn of the current stage. During this process, since the output terminal OUTn+1 of the next stage is at low level, the second thin film transistor T2 and the third thin film transistor T3 are in an off state; since the second clock signal output terminal CKV2 is at low level, the sixth thin film transistor T6 is in cut-off state. the

在此之后,移位起始信号输出端STV一直为低电平,第二时钟信号输出端CKV2输出高电平(第一时钟信号输出端CKV1为低电平),第六薄膜晶体管T6启动,第六薄膜晶体管T6的源极与漏极导通;由于第六薄膜晶体管T6的漏极与本级输出端OUTn连接,第六薄膜晶体管T6的源极与电源负端VSS连接,所以本级输出端OUTn也为低电平,保持无效状态。此过程中,由于下一级输出端OUTn+1为高电平,第二薄膜晶体管T2和第三薄膜晶体管T3处于导通状态,第二薄膜晶体管T2的源极与漏极导通使本级输出端OUTn与电源负端VSS连接,进一步保证了本级输出端OUTn的低电平,第三薄膜晶体管T3的源极与漏极导通使第四薄膜晶体管T4的源极与低电平的本级输出端OUTn之间的电容Cb放电。因此,无论第一薄膜晶体管T1和第二薄膜晶体管T2是否处于上拉(pull-up)或下拉(pull-down),本级输出端OUTn均保持无效状态。 After that, the shift start signal output terminal STV is always low level, the second clock signal output terminal CKV2 outputs high level (the first clock signal output terminal CKV1 is low level), the sixth thin film transistor T6 is activated, The source and drain of the sixth thin film transistor T6 are turned on; since the drain of the sixth thin film transistor T6 is connected to the output terminal OUTn of the current stage, and the source of the sixth thin film transistor T6 is connected to the negative terminal VSS of the power supply, the output of the current stage Terminal OUTn is also low level and remains inactive. During this process, since the output terminal OUTn+1 of the next stage is at a high level, the second thin film transistor T2 and the third thin film transistor T3 are in the conduction state, and the source and drain of the second thin film transistor T2 are turned on so that the current stage The output terminal OUTn is connected to the negative terminal VSS of the power supply, which further ensures the low level of the output terminal OUTn of this stage, and the source and drain of the third thin film transistor T3 are turned on so that the source of the fourth thin film transistor T4 is connected to the low level. The capacitor Cb between the output terminals OUTn of the current stage is discharged. Therefore, no matter whether the first thin film transistor T1 and the second thin film transistor T2 are pulled up (pull-up) or pulled down (pull-down), the output terminal OUTn of the current stage remains inactive. the

对于位于第二个位置及其以后位置的移位寄存器,其工作原理与前述过程基本相同,所不同的是,由于第四薄膜晶体管T4的栅极与上一级输出端OUTn-1连接,在上一级输出端OUTn-1输出高电平时,第四薄膜晶体管T4启动,使处于高电平的第四薄膜晶体管T4的源极与低电平的本级输出端OUTn之间的电容Cb充电,并在下一个时刻实现本级的高电平输出。 For the shift register located in the second position and subsequent positions, its working principle is basically the same as the aforementioned process, the difference is that since the gate of the fourth thin film transistor T4 is connected to the output terminal OUTn-1 of the previous stage, in When the output terminal OUTn-1 of the upper stage outputs a high level, the fourth thin film transistor T4 is activated, so that the capacitor Cb between the source of the fourth thin film transistor T4 at a high level and the output terminal OUTn of the current stage at a low level is charged. , and realize the high-level output of this stage at the next moment. the

如图1b、图2所示,首先第一时钟信号输出端CKV1输出高电平(第二时钟信号输出端CKV2为低电平),第五薄膜晶体管T5启动,其源极与漏极导通,由于第五薄膜晶体管T5的漏极与低电平的上一级输出端连接,所以本级输出端也为低电平,保持无效状态。此过程中,第二薄膜晶体管T2、第三薄膜晶体管T3和第六薄膜晶体管T6处于截止状态。 As shown in Figure 1b and Figure 2, first the first clock signal output terminal CKV1 outputs a high level (the second clock signal output terminal CKV2 is low level), the fifth thin film transistor T5 is started, and its source and drain are turned on , because the drain of the fifth thin film transistor T5 is connected to the low-level output terminal of the previous stage, so the output terminal of the current stage is also low-level and remains inactive. During this process, the second thin film transistor T2, the third thin film transistor T3 and the sixth thin film transistor T6 are in an off state. the

随后第二时钟信号输出端CKV2输出高电平(第一时钟信号输出端CKV1为低电平),第六薄膜晶体管T6启动,其源极与漏极导通,由于第六薄膜晶 体管T6的源极与电源负端VSS连接,所以本级输出端也为低电平,保持无效状态。此过程中,第二薄膜晶体管T2和第三薄膜晶体管T3处于截止状态。 Then the second clock signal output terminal CKV2 outputs a high level (the first clock signal output terminal CKV1 is low level), the sixth thin film transistor T6 starts, and its source and drain are turned on, because the sixth thin film transistor T6 The source of the power supply is connected to the negative terminal VSS of the power supply, so the output terminal of this stage is also at a low level and remains in an invalid state. During this process, the second thin film transistor T2 and the third thin film transistor T3 are in an off state. the

之后,第一时钟信号输出端CKV1输出高电平(第二时钟信号输出端CKV2为低电平),第五薄膜晶体管T5启动,其源极与漏极导通,由于此时上一级输出端输出高电平,而第五薄膜晶体管T5的漏极与上一级输出端连接,所以上一级输出端输出的高电平由本级输出端输出。此过程中,第二薄膜晶体管T2、第三薄膜晶体管T3和第六薄膜晶体管T6处于截止状态。 Afterwards, the first clock signal output terminal CKV1 outputs a high level (the second clock signal output terminal CKV2 is low level), the fifth thin film transistor T5 is started, and its source and drain are turned on. terminal outputs a high level, and the drain of the fifth thin film transistor T5 is connected to the output terminal of the previous stage, so the high level output from the output terminal of the previous stage is output by the output terminal of the current stage. During this process, the second thin film transistor T2, the third thin film transistor T3 and the sixth thin film transistor T6 are in an off state. the

在此之后,上一级输出端一直为低电平,第二时钟信号输出端CKV2输出高电平(第一时钟信号输出端CKV1为低电平),第六薄膜晶体管T6启动,其源极与漏极导通,本级输出端为低电平,保持无效状态。此过程中,第二薄膜晶体管T2和第三薄膜晶体管T3处于导通状态,进一步保证了本级输出端的低电平,同时使第四薄膜晶体管T4的源极与低电平的本级输出端之间的电容Cb放电。因此,无论第一薄膜晶体管T1和第二薄膜晶体管T2是否处于上拉(pull-up)或下拉(pull-down),本级输出端均保持无效状态。 After that, the output terminal of the upper stage is always at low level, the second clock signal output terminal CKV2 outputs high level (the first clock signal output terminal CKV1 is low level), the sixth thin film transistor T6 is activated, and its source Conducted with the drain, the output of this stage is low and remains inactive. During this process, the second thin film transistor T2 and the third thin film transistor T3 are in the conduction state, which further ensures the low level of the output terminal of the current stage, and at the same time makes the source of the fourth thin film transistor T4 and the low level output terminal of the current stage The capacitor Cb between discharges. Therefore, no matter whether the first thin film transistor T1 and the second thin film transistor T2 are pulled up (pull-up) or pulled down (pull-down), the output terminal of the current stage remains inactive. the

其它位置移位寄存器的工作过程可通过如图1b所示结构和图2所示工作时序图得出,不再赘述。 The working process of other position shift registers can be obtained through the structure shown in FIG. 1 b and the working sequence diagram shown in FIG. 2 , and will not be repeated here. the

从本发明上述技术方案可以看出,本发明移位寄存器通过第一时钟信号输出端CKV1和第二时钟信号输出端CKV2依次输出的高电平有效保持了输出端的无效状态,栅线不会出现漂浮,也不会受到与栅线相连的其它噪声电压的影响,移位寄存器可靠地保持无效状态,不会导致错误操作。 It can be seen from the above technical solution of the present invention that the shift register of the present invention effectively maintains the invalid state of the output terminal through the high level sequentially output by the first clock signal output terminal CKV1 and the second clock signal output terminal CKV2, and the gate line will not appear Floating and unaffected by other noise voltages connected to the gate lines, the shift register remains reliably inactive without causing erroneous operation. the

本发明移位寄存器可以通过液晶显示器阵列工艺中的5次掩膜工艺或4次掩膜工艺来实现,通过在基板有源区域外的空余部分或基板边缘处排列薄膜晶体管,然后将其直接沉积在阵列基板上。 The shift register of the present invention can be realized by 5 masking processes or 4 masking processes in the liquid crystal display array process, by arranging thin film transistors in the vacant part outside the active area of the substrate or at the edge of the substrate, and then directly depositing them on the array substrate. the

图3为本发明栅极驱动装置的结构示意图。如图3所示,栅极驱动装置的主体结构包括五个移位寄存器、移位起始信号输出端STV、第一时钟信号输出端CKV1、第二时钟信号输出端CKV2和电源负端VSS,每个移位寄存器分 别与电源负端VSS、第一时钟信号输出端CKV1和第二时钟信号输出端CKV2连接,其中每个移位寄存器与电源负端VSS连接用于接收栅极关断电压,每个移位寄存器与第一时钟信号输出端CKV1和第二时钟信号输出端CKV2连接用于接收第一时钟信号和第二时钟信号,进一步地,第一移位寄存器SFT1与第二移位寄存器SFT2的第二输出端OUT2连接,用于接收第二移位寄存器SFT2的第二输出信号,同时第一移位寄存器SFT1的第一输出端OUT1与第二移位寄存器SFT2连接,用于向第二移位寄存器SFT2输出第一输出信号。二移位寄存器SFT2与第三移位寄存器SFT3的第三输出端OUT3连接,用于接收第三移位寄存器SFT3的第三输出信号,同时第二移位寄存器SFT2的第二输出端OUT2与第三移位寄存器SFT3连接,用于向第三移位寄存器SFT3输出第二输出信号。第三移位寄存器SFT3与第四移位寄存器SFT4的第四输出端OUT4连接,用于接收第四移位寄存器SFT4的第四输出信号,同时第三移位寄存器SFT3的第三输出端OUT3与第四移位寄存器SFT4连接,用于向第四移位寄存器SFT4输出第三输出信号。第四移位寄存器SFT4与第五移位寄存器SFT5的第五输出端OUT5连接,用于接收第五移位寄存器SFT5的第五输出信号,同时第四移位寄存器SFT4的第四输出端OUT4与第五移位寄存器SFT5连接,用于向第五移位寄存器SFT5输出第四输出信号。第五移位寄存器SFT5的第五输出端OUT5与第四移位寄存器SFT4连接,用于向第四移位寄存器SFT4输出第五输出信号。 FIG. 3 is a schematic structural diagram of a gate driving device of the present invention. As shown in FIG. 3, the main structure of the gate driving device includes five shift registers, a shift start signal output terminal STV, a first clock signal output terminal CKV1, a second clock signal output terminal CKV2, and a negative power supply terminal VSS. Each shift register is respectively connected to the negative power supply terminal VSS, the first clock signal output terminal CKV1 and the second clock signal output terminal CKV2, wherein each shift register is connected to the negative power supply terminal VSS for receiving the gate cut-off voltage , each shift register is connected to the first clock signal output terminal CKV1 and the second clock signal output terminal CKV2 for receiving the first clock signal and the second clock signal, further, the first shift register SFT1 and the second shift register SFT1 The second output terminal OUT2 of the register SFT2 is connected to receive the second output signal of the second shift register SFT2, while the first output terminal OUT1 of the first shift register SFT1 is connected to the second shift register SFT2 for providing The second shift register SFT2 outputs the first output signal. The second shift register SFT2 is connected to the third output terminal OUT3 of the third shift register SFT3 for receiving the third output signal of the third shift register SFT3, while the second output terminal OUT2 of the second shift register SFT2 is connected to the second output terminal OUT2 of the second shift register SFT3. The three shift registers SFT3 are connected to output the second output signal to the third shift register SFT3. The third shift register SFT3 is connected to the fourth output terminal OUT4 of the fourth shift register SFT4 for receiving the fourth output signal of the fourth shift register SFT4, while the third output terminal OUT3 of the third shift register SFT3 is connected to the fourth output terminal OUT4 of the fourth shift register SFT4. The fourth shift register SFT4 is connected to output the third output signal to the fourth shift register SFT4. The fourth shift register SFT4 is connected to the fifth output terminal OUT5 of the fifth shift register SFT5 for receiving the fifth output signal of the fifth shift register SFT5, while the fourth output terminal OUT4 of the fourth shift register SFT4 is connected to The fifth shift register SFT5 is connected to output the fourth output signal to the fifth shift register SFT5. The fifth output terminal OUT5 of the fifth shift register SFT5 is connected to the fourth shift register SFT4 for outputting a fifth output signal to the fourth shift register SFT4. the

移位起始信号输出端STV首先输出起始脉冲,之后第一移位寄存器SFT1分别从第一时钟信号输出端CKV1和第二时钟信号输出端CKV2接收第一时钟信号和第二时钟信号,第一时钟信号为一高电平脉冲,第二时钟信号为紧接着第一时钟信号的一高电平脉冲,具有图1a所示结构的本发明第一移位寄存器SFT1工作,工作过程不再赘述;第一移位寄存器SFT1的第一输出端OUT1向第二移位寄存器SFT2输出第一输出信号后,第二移位寄存器SFT2分别从第一时钟信号输出端CKV1和第二时钟信号输出端CKV2接收第一时钟信号和 第二时钟信号,第二时钟信号为一高电平脉冲,第一时钟信号为紧接着第二时钟信号的一高电平脉冲,具有图1b所示结构的本发明第二移位寄存器SFT2工作,重复上述流程,就实现了液晶显示器的逐行扫描。 The shift start signal output terminal STV first outputs a start pulse, and then the first shift register SFT1 receives the first clock signal and the second clock signal from the first clock signal output terminal CKV1 and the second clock signal output terminal CKV2 respectively. A clock signal is a high-level pulse, and the second clock signal is a high-level pulse following the first clock signal. The first shift register SFT1 of the present invention with the structure shown in Figure 1a works, and the working process is no longer repeated. ; After the first output terminal OUT1 of the first shift register SFT1 outputs the first output signal to the second shift register SFT2, the second shift register SFT2 outputs the clock signal from the first clock signal output terminal CKV1 and the second clock signal output terminal CKV2 respectively. Receive the first clock signal and the second clock signal, the second clock signal is a high level pulse, the first clock signal is a high level pulse next to the second clock signal, the first clock signal of the present invention having the structure shown in Figure 1b The two shift registers SFT2 work, repeat the above process, and realize the progressive scanning of the liquid crystal display. the

最后应说明的是:以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围。 Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention without limitation, although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be Modifications or equivalent replacements can be made without departing from the spirit and scope of the technical solutions of the present invention. the

Claims (2)

1.一种移位寄存器,其特征在于,包括直接沉积在阵列基板上的六个薄膜晶体管,其中六个薄膜晶体管分别为:1. A shift register, characterized in that it comprises six thin film transistors directly deposited on the array substrate, wherein the six thin film transistors are respectively: 第一薄膜晶体管,其栅极与源极之间设置电容,其漏极与第一时钟信号输出端连接,其源极与本级输出端连接;The first thin film transistor has a capacitance between its gate and source, its drain is connected to the first clock signal output terminal, and its source is connected to the output terminal of the current stage; 第二薄膜晶体管,其栅极与下一级输出端连接,其漏极与本级输出端连接,其源极与电源负端连接;The gate of the second thin film transistor is connected to the output terminal of the next stage, the drain is connected to the output terminal of the current stage, and the source is connected to the negative terminal of the power supply; 第三薄膜晶体管,其栅极分别与第二薄膜晶体管的栅极和下一级输出端连接,其漏极与第一薄膜晶体管的栅极连接,其源极与电源负端连接;The gate of the third thin film transistor is respectively connected to the gate of the second thin film transistor and the output terminal of the next stage, the drain is connected to the gate of the first thin film transistor, and the source is connected to the negative terminal of the power supply; 第四薄膜晶体管,其栅极与其漏极连接,其漏极与移位起始信号输出端或上一级输出端连接,其源极分别与第一薄膜晶体管的栅极和第三薄膜晶体管的漏极连接;The gate of the fourth thin film transistor is connected to its drain, its drain is connected to the output terminal of the shift start signal or the output terminal of the previous stage, and its source is connected to the gate of the first thin film transistor and the gate of the third thin film transistor respectively. drain connection; 第五薄膜晶体管,其栅极与第一时钟信号输出端连接,其漏极分别与第四薄膜晶体管的栅极和漏极连接,其源极与本级输出端连接;The gate of the fifth thin film transistor is connected to the first clock signal output terminal, the drain is respectively connected to the gate and drain of the fourth thin film transistor, and the source is connected to the output terminal of the current stage; 第六薄膜晶体管,其栅极与第二时钟信号输出端连接,其漏极与第五薄膜晶体管的源极和本级输出端连接,其源极与电源负端连接。The gate of the sixth thin film transistor is connected to the second clock signal output terminal, the drain is connected to the source of the fifth thin film transistor and the output terminal of the current stage, and the source is connected to the negative terminal of the power supply. 2.一种包含权利要求1所述移位寄存器的栅极驱动装置,其特征在于,包括移位起始信号输出端和五个移位寄存器,其中五个移位寄存器分别与电源负端、第一时钟信号输出端和第二时钟信号输出端连接,并且所述五个移位寄存器中,第一移位寄存器与移位起始信号输出端连接,具有第一输出端;第二移位寄存器与第一移位寄存器的第一输出端连接,其第二输出端与所述第一移位寄存器连接;第三移位寄存器与第二移位寄存器的第二输出端连接,其第三输出端与所述第二移位寄存器连接;第四移位寄存器与第三移位寄存器的第三输出端连接,其第四输出端与所述第三移位寄存器连接;第五移位寄存器与第四移位寄存器的第四输出端连接,具有第五输出端。2. A gate drive device comprising the shift register according to claim 1, characterized in that it comprises a shift start signal output terminal and five shift registers, wherein the five shift registers are respectively connected to the negative terminal of the power supply, The first clock signal output end is connected with the second clock signal output end, and among the five shift registers, the first shift register is connected with the shift start signal output end and has a first output end; the second shift register The register is connected with the first output end of the first shift register, and its second output end is connected with the first shift register; the third shift register is connected with the second output end of the second shift register, and its third The output end is connected with the second shift register; the fourth shift register is connected with the third output end of the third shift register, and its fourth output end is connected with the third shift register; the fifth shift register It is connected with the fourth output end of the fourth shift register and has a fifth output end.
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