CN102403405B - Manufacturing method for back contact type silicon solar cell - Google Patents
Manufacturing method for back contact type silicon solar cell Download PDFInfo
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- CN102403405B CN102403405B CN201110373861.0A CN201110373861A CN102403405B CN 102403405 B CN102403405 B CN 102403405B CN 201110373861 A CN201110373861 A CN 201110373861A CN 102403405 B CN102403405 B CN 102403405B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 94
- 239000010703 silicon Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000005297 pyrex Substances 0.000 claims description 5
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 34
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000006062 fragmentation reaction Methods 0.000 abstract description 2
- 238000013467 fragmentation Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种背接触硅太阳能电池的制备方法，包括如下步骤：(1)在硅片表面开设孔洞，然后在其受光面进行制绒；(2)在硅片的受光面扩散制结，在硅片受光面、周边及孔洞内形成PN结；(3)在硅片受光面、周边和孔洞内的PN结上设置透明导电膜；(4)对硅片周边进行刻蚀，去除硅片周边的透明导电膜和PN结；然后在硅片受光面的透明导电膜上镀设减反射膜；(5)在硅片的非镀膜面上制备贯孔电极、背金属电极、背钝化场，即可得到所述背接触硅太阳能电池。本发明制备得到的背接触硅太阳能电池的受光面没有电极遮挡，避免了遮光损失，显著提高了光电转化效率；需要开设的孔洞也大大减少，从而大大降低了碎片率，而且简化了制备工序。
The invention discloses a method for preparing a back-contact silicon solar cell, which comprises the following steps: (1) opening holes on the surface of a silicon wafer, and then performing texturing on the light-receiving surface thereof; , forming a PN junction on the light-receiving surface, periphery and holes of the silicon wafer; (3) setting a transparent conductive film on the light-receiving surface, periphery and PN junctions in the holes of the silicon wafer; (4) etching the periphery of the silicon wafer to remove silicon The transparent conductive film and PN junction around the chip; then the anti-reflection film is plated on the transparent conductive film on the light-receiving surface of the silicon chip; field, the back contact silicon solar cell can be obtained. The light-receiving surface of the back-contact silicon solar cell prepared by the present invention is not shielded by electrodes, avoids light-shielding loss, and significantly improves photoelectric conversion efficiency; the number of holes to be opened is also greatly reduced, thereby greatly reducing the fragmentation rate, and simplifying the preparation process.
Description
Technical field
The present invention relates to a kind of preparation method of back contact silicon solar cell, belong to crystal-silicon solar cell and manufacture field.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential alternative energy source of one.At present, in all solar cells, silicon solar cell is one of solar cell obtaining business promotion on a large scale, this is because silicon materials have very abundant reserves in the earth's crust, silicon solar cell is compared the solar cell of other types simultaneously, have excellent electric property and mechanical performance, silicon solar cell in photovoltaic field in occupation of consequence.Therefore, the silicon solar cell of research and development high performance-price ratio has become one of main direction of studying of photovoltaic enterprise of various countries.
The electricity generating principle of silicon solar cell is the photovoltaic effect of based semiconductor PN junction.Solar cell has many types and structure at present, and commonplace way is that the both positive and negative polarity of solar cell is placed in respectively to its sensitive surface and shady face, and similar solar cell can be realized by low-resistance metal positive and negative interconnected.But this class solar cell is blocked and exists larger shading to lose by electrode because of a lot of districts area on its sensitive surface, thereby has lost one part of current.
For improving the loss of the photoelectric conversion that said structure brings, the solar cell of existing various structures is developed, wherein there is a class to be called " back of the body contact " battery, the both positive and negative polarity that is characterized in battery is all located at shady face, this structure can reduce the shading loss of sensitive surface, increase photoelectric conversion efficiency, and be conducive to interconnecting between solar cell.
In prior art, realize " back of the body contact " solar cell device and have following several scheme:
Be the shady face that PN junction is arranged on device, and sensitive surface does not have PN junction, can list of references (R.A. Sinton, Y. Kwark, J.Y. Gan, R.M. Swanson, IEEE Electron Device Letters, Vol. ED-7. No. 10, October 1986); The battery of this structure needs the splendid silicon chip of quality (being mainly that minority carrier lifetime is enough large), to guarantee that electric current that sensitive surface produces can pass through whole base and reach the electrode of shady face; So such sun solar cell is very fastidious to raw material, has been difficult to large-scale promotion under current manufacture level, and manufacturing cost is very high.
First scheme is MWT battery (Metal wrap through), and its PN junction is still made in the sensitive surface of device, makes tens to tens holes that run through whole device simultaneously, and hole inwall is provided with low-resistance electrode and is connected with sensitive surface electrode; So the photoelectric current that sensitive surface produces can be conducted to by electrode in hole the shady face respective electrode place of device.This scheme has solved the weakness of aforementioned back contact solar cell well, can utilize the silicon chip of existing level to manufacture the solar cell of higher electricity conversion, increases hardly cost simultaneously.At present existing multiple patents disclose its relevant art, as WO2010126346, JP2010080576, JP2010080578, US20100276772, US20090188550, US20090178707 and KR1020100098993 etc., the common trait of these structures is electrodes that sensitive surface also retains small part, thereby also can there is certain shading loss, affect the further raising of electricity conversion.
In order to address the above problem, there is again researcher to propose the electrodeless new construction battery device of sensitive surface (Emitter wrap through is called for short EWT); Be characterized in that PN junction is still made in the sensitive surface of device, make tens thousand of the holes that run through whole device simultaneously, hole inwall high-concentration dopant has PN junction, and be connected with the respective electrode of shady face by low-resistance electrode, so the photoelectric current that sensitive surface produces can be conducted to by electrode in hole the shady face place of device.Multiple patents have related to relevant art, as US7851696, CA2596827, US7144751, CA2530743, US20090320922, US20110086466, WO2005006402, CA2530684, US7649141, WO2005018007, WO2005076959, WO2005076960, WO2006029250, US7863084 and KR1020110011053.Although the shading loss that this technology has avoided front electrode to bring, but in order to guarantee that sensitive surface electric current transfers to the back side without loss, up to ten thousand holes need to be set, and in hole, need to form high-concentration dopant, these conditions had both caused its preparation technology very complicated, and cost is high; Meanwhile, too much hole has also affected the mechanical strength of device, there will be the situation of a large amount of silicon chip fragmentations when production.
Summary of the invention
The object of the invention is to provide a kind of preparation method of back contact silicon solar cell.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation method of back contact silicon solar cell, comprises the steps:
(1) carry out making herbs into wool at the sensitive surface of silicon chip, then offer hole;
(2) at the sensitive surface diffusion system knot of above-mentioned silicon chip, in silicon chip sensitive surface, periphery and hole, form PN junction;
(3) remove after phosphorus silicon or Pyrex, on the PN junction in above-mentioned silicon chip sensitive surface, periphery and hole, nesa coating is set;
(4) silicon chips periphery is carried out to etching, remove nesa coating and the PN junction of silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) on the non-coated surface of above-mentioned silicon chip, prepare perforation electrode, back of the body metal electrode, back of the body passivation field, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection.
Above, described silicon chip can be p-type or N-shaped.Described back of the body passivation field is dopant or the medium passivating film identical with described conductive wafer type, or two kinds all have.Back of the body passivation field and back of the body metal electrode electric connection, and both with perforation electrode only depend on air insulation isolate and polarity of electrode contrary.
The non-coated surface of the silicon chip in described step (5) refers to that silicon chip does not plate the face of establishing antireflective film, i.e. the non-coated with antireflection face of silicon chip.
In technique scheme, the quantity of described step (1) Hole is 2 ~ 500.Preferably, the quantity of described step (1) Hole is 9 ~ 100.
In technique scheme, the nesa coating in described step (3) is ito thin film, SnO
2film, In
2o
3film, ZnO film, Cd
2snO
4film or FTO film.These are all prior aries, and wherein, ito thin film refers to the indium oxide transparent conductive film of tin dope, and FTO film refers to SnO
2the nesa coating of doped F.Certainly, above-mentioned nesa coating can also be selected from CuGaO
2, CuInO
2, SrCu
2o
2, or ZnO mixes B, Al, Ga, In etc.
In technique scheme, the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.Preferably, the thickness of described nesa coating is 100 ~ 500 nm.
Another kind of technical scheme correspondingly, a kind of preparation method of back contact silicon solar cell, comprises the steps:
(1) offer hole at silicon chip surface, then carry out making herbs into wool at its sensitive surface;
(2) at the sensitive surface diffusion system knot of above-mentioned silicon chip, in silicon chip sensitive surface, periphery and hole, form PN junction;
(3) remove after phosphorus silicon or Pyrex, on the PN junction in above-mentioned silicon chip sensitive surface, periphery and hole, nesa coating is set;
(4) silicon chips periphery is carried out to etching, remove nesa coating and the PN junction of silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) on the non-coated surface of above-mentioned silicon chip, prepare perforation electrode, back of the body metal electrode, back of the body passivation field, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection.
In technique scheme, the quantity of described step (1) Hole is 2 ~ 500.
In technique scheme, the nesa coating in described step (3) is ito thin film, SnO
2film, In
2o
3film, ZnO film, Cd
2snO
4film or FTO film.
In technique scheme, the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1. the present invention has prepared a kind of new back contact silicon solar cell, and compared with existing MWT battery, battery sensitive surface of the present invention does not have electrode to block, and has avoided shading loss, has significantly improved electricity conversion; Compared with existing EWT battery, the hole that battery of the present invention need to be offered greatly reduces, thereby greatly reduces fragment rate, and has simplified preparation section.
2. preparation method of the present invention is simple, and does not need high-quality silicon chip, thus with low cost, be suitable for large-scale production.
3. the present invention utilizes nesa coating to replace the electrode on sensitive surface, has taken into account printing opacity and electric current collection, thereby there is no blocking of sensitive surface electrode, significantly improved electricity conversion, and unified appearance is attractive in appearance.
Accompanying drawing explanation
Accompanying drawing 1 ~ 7th, the preparation process schematic diagram of the embodiment of the present invention one;
Accompanying drawing 8 is structural representations of back contact silicon solar cell in the embodiment of the present invention one.
Wherein: 1, silicon chip; 2, PN junction; 3, electrically conducting transparent SnO
2: F film; 4, hole; 5, antireflective coating; 6, perforation electrode; 7, back of the body metal electrode; 8, back of the body passivation field.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment mono-
Shown in Fig. 1 ~ 9, a kind of preparation method of back contact silicon solar cell, silicon chip is N-shaped, comprises the steps:
(1) offer hole 4 at silicon chip surface, number is 60, its effect is the shady face that electrode can be set in hole the electric current of cell piece sensitive surface is guided to cell piece, so just can make the positive pole of cell piece and negative pole all be positioned at the back side of cell piece; In the present embodiment, can adopt the mode of laser, machine drilling or chemical corrosion to carry out perforate; Then carry out making herbs into wool at its sensitive surface, its objective is by chemical reaction and make the silicon chip surface of light originally form scraggly structure to extend light at its surperficial propagation path, thereby improve the absorption of silicon chip to light; After perforate, the structural representation of silicon chip as shown in Figure 1;
(2) carry out boron diffusion on the surface of silicon chip, simultaneously hole 4 inwalls and silicon chip 1 periphery also form PN junction 2, and remove Pyrex with hydrofluoric acid; Structural representation after formation PN junction as shown in Figure 2;
(3) by electrically conducting transparent SnO thick 300nm
2: F film 3 is plated on PN junction, comprises on hole inwall and silicon chips periphery PN junction, as shown in Figure 3; Here electrically conducting transparent SnO
2: the object of F film is to replace traditional metal electrode, effectively collects the photoelectric current that conduction sensitive surface produces, and does not block incident light; Plating SnO
2: the method for F film has a variety of, such as methods such as magnetron sputtering, organic metal vapour deposition, vacuum vapor deposition method, chemical vapour deposition technique, spraying process, sol-gel process, the auxiliary vapour depositions of electrostatic spray; In the present embodiment, SnO
2: F film adopts magnetically controlled sputter method plated film;
(4) silicon chips periphery is carried out to etching; Object is to remove the electrically conducting transparent SnO of periphery
2: F film 3 and PN junction 2, avoid short circuit; The mode of etching has multiple, can be wet etching, can be also dry etching, and wherein, wet etching comprises: chemical liquids corrosion, and chemical corrosion slurry corrosion etc., dry etching comprises plasma gas corrosion etc.; In the present embodiment, adopt the mixed solution wet etching of nitric acid, hydrofluoric acid, the structural representation in hole and after silicon chips periphery etching as shown in Figure 4;
Adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) at SnO
2: applying silicon oxide antireflective coating 5 on F film 3, the effect of this film is to reduce positive reflection of light, maximally utilises solar energy; In the present embodiment, on silicon chip 1, form antireflective coating; In addition, adopting PECVD is one embodiment of the present of invention, should not be construed as limiting the invention, and in other embodiments of the invention, film plating process can also adopt additive method well-known to those skilled in the art; The structural representation of coated with antireflection film 5 rear silicon chips as shown in Figure 5;
(5) on the non-coated with antireflection face of silicon chip silk screen printing perforation electrode 6 as negative pole; In all embodiment of the present invention, can also by the method such as vacuum evaporation, sputter by perforation electrode deposition on silicon chip 1, prepare perforation electrode 6 and electrically conducting transparent SnO
2: F film 3 electricity are communicated with, and its structural representation is as shown in Figure 6;
On the non-coated with antireflection face of silicon chip, silk screen printing back of the body metal electrode 7 is as anodal; In all embodiment of the present invention, can also back of the body metal electrode 7 be deposited on silicon chip 1 by the method such as vacuum evaporation, sputter; Prepare the structural representation of back electrode as shown in Figure 7;
Carry out silk screen printing phosphorus slurry at the non-coated with antireflection face of silicon chip and adulterate and use PECVD method grown silicon nitride, as compound back of the body passivation field 8; In addition, adopting the doping of silk screen printing phosphorus slurry and PECVD method grown silicon nitride is one embodiment of the present of invention, should not be construed as limiting the invention, in other embodiments of the invention, phosphorus doping or film plating process can also adopt additive method well-known to those skilled in the art; Prepare composite back passivation field structure schematic diagram as shown in Figure 8;
Wherein, composite back passivation layer 8 is communicated with back of the body metal electrode 7 electricity, and the two and perforation electrode 6 only depend on air insulation isolation;
It shown in Fig. 8, is the structural representation of the final back-contact solar cell that obtains according to the present embodiment.
Embodiment bis-
A preparation method for back contact silicon solar cell, silicon chip is p-type, comprises the steps:
The first step, perforate on silicon chip, number is 100, its effect is the shady face that electrode can be set in through hole the electric current of cell piece sensitive surface is guided to cell piece, so just can make the positive pole of cell piece and negative pole all be positioned at the back side of cell piece; In the present embodiment, can adopt the mode of laser, machine drilling or chemical corrosion to carry out perforate;
Second step, making herbs into wool; Its objective is by chemical reaction and make the silicon chip surface of light originally form scraggly structure to extend light at its surperficial propagation path, thereby improve the absorption of silicon chip to light;
The 3rd step, carries out phosphorus diffusion on the surface of silicon chip, forms PN junction at sensitive surface, and simultaneously hole inwall and silicon chips periphery also form PN junction, and removes phosphorosilicate glass with hydrofluoric acid;
The 4th step, is plated in electrically conducting transparent ito thin film thick 500nm on PN junction, comprises on hole inwall and silicon chips periphery PN junction; Here the object of electrically conducting transparent ito thin film is to replace traditional metal electrode, effectively collects the photoelectric current that conduction sensitive surface produces, and does not block incident light; The method of plating ito thin film has a variety of, such as methods such as magnetron sputtering, organic metal vapour deposition, vacuum vapor deposition method, chemical vapour deposition technique, spraying process, sol-gel process, the auxiliary vapour depositions of electrostatic spray; In the present embodiment, ito thin film adopts the mode plated film of magnetron sputtering;
The 5th step, periphery etching; Object is to remove electrically conducting transparent ito thin film and the PN junction of silicon chips periphery, avoids short circuit; The mode of etching has multiple, can be wet etching, can be also dry etching, and wherein, wet etching comprises: chemical liquids corrosion, and chemical corrosion slurry corrosion etc., dry etching comprises plasma gas corrosion etc.; In the present embodiment, adopt the mixed solution wet etching of nitric acid, hydrofluoric acid;
The 6th step is plated silicon nitride anti-reflecting film on ito thin film, and the effect of this film is to reduce positive reflection of light, maximally utilises solar energy; In embodiments of the present invention, adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) on silicon chip, form antireflective coating; In addition, adopting PECVD is one embodiment of the present of invention, should not be construed as limiting the invention, and in other embodiments of the invention, film plating process can also adopt additive method well-known to those skilled in the art;
The 7th step, on the non-coated with antireflection face of silicon chip, silk screen printing perforation silver electrode is as positive pole; In all embodiment of the present invention, can also by the method such as vacuum evaporation, sputter by perforation electrode deposition on silicon chip; Preparing perforation electrode is communicated with electrically conducting transparent ito thin film electricity;
The 8th step, on the non-coated with antireflection face of silicon chip, silk screen printing back of the body silver electrode is as negative pole; In all embodiment of the present invention, can also back electrode be deposited on silicon chip by the method such as vacuum evaporation, sputter;
The 9th step, silk screen printing aluminium back of the body passivation field on the non-coated with antireflection face of silicon chip; In embodiments of the present invention, can also aluminium be carried on the back to passivation field by the method such as vacuum evaporation, sputter is deposited on silicon chip; Wherein, aluminium back of the body passivation field is communicated with back of the body silver electrode electricity, and the two and perforation silver electrode only depend on air insulation isolation.
The above is only the application's preferred implementation, makes those skilled in the art can understand or realize the application.To be apparent to one skilled in the art to the multiple modification of these embodiment, General Principle as defined herein can, in the case of not departing from the application's spirit or scope, realize in other embodiments.Therefore, the application will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (2)
1. a preparation method for back contact silicon solar cell, is characterized in that, comprises the steps:
(1) carry out making herbs into wool at the sensitive surface of silicon chip, then offer hole;
(2) at the sensitive surface diffusion system knot of above-mentioned silicon chip, in silicon chip sensitive surface, periphery and hole, form PN junction;
(3) remove after phosphorus silicon or Pyrex, on the PN junction in above-mentioned silicon chip sensitive surface, periphery and hole, nesa coating is set;
(4) silicon chips periphery is carried out to etching, remove nesa coating and the PN junction of silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) on the non-coated surface of above-mentioned silicon chip, prepare perforation electrode, back of the body metal electrode, back of the body passivation field, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection;
The quantity of described step (1) Hole is 9 ~ 100.
2. the preparation method of back contact silicon solar cell according to claim 1, is characterized in that: the nesa coating in described step (3) is ito thin film, SnO
2film, In
2o
3film, ZnO film, Cd
2snO
4film or FTO film.
3. the preparation method of back contact silicon solar cell according to claim 1, is characterized in that: the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
4. the preparation method of back contact silicon solar cell according to claim 3, is characterized in that: the thickness of described nesa coating is 100 ~ 500 nm.
5.a preparation method for back contact silicon solar cell, is characterized in that, comprises the steps:
(1) offer hole at silicon chip surface, then carry out making herbs into wool at its sensitive surface;
(2) at the sensitive surface diffusion system knot of above-mentioned silicon chip, in silicon chip sensitive surface, periphery and hole, form PN junction;
(3) remove after phosphorus silicon or Pyrex, on the PN junction in above-mentioned silicon chip sensitive surface, periphery and hole, nesa coating is set;
(4) silicon chips periphery is carried out to etching, remove nesa coating and the PN junction of silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) on the non-coated surface of above-mentioned silicon chip, prepare perforation electrode, back of the body metal electrode, back of the body passivation field, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection;
The quantity of described step (1) Hole is 2 ~ 500.
6. the preparation method of back contact silicon solar cell according to claim 5, is characterized in that: the nesa coating in described step (3) is ito thin film, SnO
2film, In
2o
3film, ZnO film, Cd
2snO
4film or FTO film.
7. the preparation method of back contact silicon solar cell according to claim 5, is characterized in that: the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Back contact solar cell with integrated conductive vias and method of manufacture |
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back Contact Solar Module |
| WO2011105907A1 (en) * | 2010-02-26 | 2011-09-01 | Stichting Energieonderzoek Centrum Nederland | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Back contact solar cell with integrated conductive vias and method of manufacture |
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back Contact Solar Module |
| WO2011105907A1 (en) * | 2010-02-26 | 2011-09-01 | Stichting Energieonderzoek Centrum Nederland | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method |
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