CN102403406B - Preparation method for back contact type silicon solar cell - Google Patents
Preparation method for back contact type silicon solar cell Download PDFInfo
- Publication number
- CN102403406B CN102403406B CN2011103740324A CN201110374032A CN102403406B CN 102403406 B CN102403406 B CN 102403406B CN 2011103740324 A CN2011103740324 A CN 2011103740324A CN 201110374032 A CN201110374032 A CN 201110374032A CN 102403406 B CN102403406 B CN 102403406B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- film
- sensitive surface
- nesa coating
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 90
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 13
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 5
- 238000010422 painting Methods 0.000 claims description 5
- 239000005297 pyrex Substances 0.000 claims description 5
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 30
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000006062 fragmentation reaction Methods 0.000 abstract description 2
- 238000013467 fragmentation Methods 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种背接触硅太阳能电池的制备方法，包括如下步骤：(1)在硅片的受光面进行制绒，然后开设孔洞；(2)在上述硅片的受光面进行涂源扩散制结，在受光面和孔洞内形成PN结；(3)在上述受光面和孔洞内的PN结上设置透明导电膜；(4)周边刻蚀，然后在硅片受光面的透明导电膜上镀设减反射膜；(5)在上述硅片的非镀膜面上制备贯孔电极、背金属电极、背钝化场，即可得到所述背接触硅太阳能电池；所述贯孔电极与透明导电膜电连通。本发明制备得到的背接触硅太阳能电池的受光面没有电极遮挡，避免了遮光损失，显著提高了光电转化效率；需要开设的孔洞也大大减少，从而大大降低了碎片率，而且简化了制备工序。
The invention discloses a method for preparing a back-contact silicon solar cell, which comprises the following steps: (1) performing texturing on the light-receiving surface of a silicon wafer, and then opening holes; (2) performing coating source diffusion on the light-receiving surface of the silicon wafer Make a junction, form a PN junction on the light-receiving surface and the hole; (3) set a transparent conductive film on the above-mentioned light-receiving surface and the PN junction in the hole; (5) prepare a through-hole electrode, a back metal electrode, and a back passivation field on the non-coated surface of the above-mentioned silicon wafer to obtain the back-contact silicon solar cell; the through-hole electrode and the transparent The conductive film is in electrical communication. The light-receiving surface of the back-contact silicon solar cell prepared by the invention is not shielded by electrodes, which avoids light-shielding loss and significantly improves the photoelectric conversion efficiency; the number of holes to be opened is also greatly reduced, thereby greatly reducing the fragmentation rate and simplifying the preparation process.
Description
Technical field
The present invention relates to a kind of preparation method of back contact silicon solar cell, belong to crystal-silicon solar cell and manufacture field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential a kind of alternative energy source.At present, in all solar cells, silicon solar cell is one of solar cell obtained business promotion on a large scale, this is that very abundant reserves are arranged in the earth's crust due to silicon materials, silicon solar cell is compared the solar cell of other types simultaneously, excellent electric property and mechanical performance are arranged, silicon solar cell in the photovoltaic field in occupation of consequence.Therefore, the silicon solar cell of research and development high performance-price ratio has become one of main direction of studying of various countries photovoltaic enterprise.
The electricity generating principle of silicon solar cell is based on the photovoltaic effect of semiconductor PN.Solar cell has many types and structure at present, and commonplace way is that the both positive and negative polarity of solar cell is placed in respectively to its sensitive surface and shady face, and similar solar cell can be realized by low-resistance metal positive and negative interconnected.Yet this class solar cell is blocked and exists larger shading to lose by electrode because of a lot of districts area on its sensitive surface, thereby has lost one part of current.
For improving the loss of the photoelectric conversion that said structure brings, the solar cell of existing various structures is developed, wherein there is a class to be called " back of the body contact " battery, the both positive and negative polarity that is characterized in battery all is located at shady face, this structure can reduce the shading loss of sensitive surface, increase photoelectric conversion efficiency, and be conducive to interconnecting between solar cell.
In prior art, realize that " back of the body contact " solar cell device has following several scheme:
A kind of is the shady face that PN junction is arranged on device, and sensitive surface does not have PN junction, but list of references (R.A. Sinton, Y. Kwark, J.Y. Gan, R.M. Swanson, IEEE Electron Device Letters, Vol. ED-7. No. 10, October 1986); The battery of this structure needs the splendid silicon chip of quality (being mainly that minority carrier lifetime is enough large), to guarantee the electric current that sensitive surface produces, can pass through the electrode that whole base reaches shady face; So such sun solar cell is very fastidious to raw material, under current manufacture level, has been difficult to large-scale promotion, and manufacturing cost is very high.
First scheme is MWT battery (Metal wrap through), and its PN junction still is made in the sensitive surface of device, makes tens to tens holes that run through whole device simultaneously, and the hole inwall is provided with low-resistance electrode and is connected with the sensitive surface electrode; So the photoelectric current that sensitive surface produces can be conducted to by electrode in hole the shady face respective electrode place of device.This scheme has solved the weakness of aforementioned back contact solar cell well, can utilize the solar cell of the higher electricity conversion of the silicon chip manufacturing of existing level, increases hardly cost simultaneously.At present existing a plurality of patents disclose its relevant art, as WO2010126346, JP2010080576, JP2010080578, US20100276772, US20090188550, US20090178707 and KR1020100098993 etc., the common trait of these structures is electrodes that sensitive surface also retains small part, thereby also can have certain shading loss, affected the further raising of electricity conversion.
In order to address the above problem, there is again the researcher to propose the electrodeless new construction battery device of sensitive surface (Emitter wrap through is called for short EWT); Be characterized in that PN junction still is made in the sensitive surface of device, make tens thousand of the holes that run through whole device simultaneously, hole inwall high-concentration dopant has PN junction, and be connected with the respective electrode of shady face by low-resistance electrode, so the photoelectric current that sensitive surface produces can be conducted to by electrode in hole the shady face place of device.A plurality of patents have related to relevant art, as US7851696, CA2596827, US7144751, CA2530743, US20090320922, US20110086466, WO2005006402, CA2530684, US7649141, WO2005018007, WO2005076959, WO2005076960, WO2006029250, US7863084 and KR1020110011053.Although the shading that this technology has avoided front electrode to bring loss, but in order to guarantee that the sensitive surface electric current transfers to the back side without loss, up to ten thousand holes need to be set, and need to form high-concentration dopant in hole, these conditions had both caused its preparation technology very complicated, and cost is high; Simultaneously, too much hole has also affected the mechanical strength of device, there will be the situation of a large amount of silicon chip fragmentations during production.
Summary of the invention
The object of the invention is to provide a kind of preparation method of back contact silicon solar cell.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation method of back contact silicon solar cell comprises the steps:
(1) sensitive surface at silicon chip carries out making herbs into wool, then offers hole;
(2) sensitive surface at above-mentioned silicon chip carries out painting source diffusion system knot, in sensitive surface and hole, forms PN junction;
(3) after removing phosphorus silicon or Pyrex, on the PN junction in above-mentioned sensitive surface and hole, nesa coating is set;
(4) peripheral etching, the nesa coating of removal silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) prepare perforation electrode, back of the body metal electrode, back of the body passivation field on the non-coated surface of above-mentioned silicon chip, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection.
Above, described silicon chip can be p-type or N-shaped.Described back of the body passivation field is dopant or the medium passivating film identical with described conductive wafer type, or two kinds all have.Back of the body passivation field and back of the body metal electrode electric connection, and both with the perforation electrode only depend on air insulation isolate and polarity of electrode contrary.
The non-coated surface of the silicon chip in described step (5) refers to that silicon chip does not plate the face of establishing antireflective film, i.e. the non-coated with antireflection face of silicon chip.
Described painting source diffusion system knot is prior art, refer to that the mode that adopts silk screen printing or spin coating or inkjet printing will contain the slurry of doped chemical composition or solution or ink and cover the silicon chip surface that needs system is tied, more the process high-temperature process obtains PN junction.Described doped chemical composition, refer to phosphorous or boron element, and such as the p-type silicon chip should cover containing slurry or solution or the ink of mixing P elements, and the N-shaped silicon chip should cover slurry or solution or ink containing the boron-doping element.
In technique scheme, the quantity of described step (1) Hole is 2 ~ 500.Preferably, the quantity of described step (1) Hole is 9 ~ 100.
In technique scheme, the nesa coating in described step (3) is ito thin film, SnO
2Film, In
2O
3Film, ZnO film, Cd
2SnO
4Film or FTO film.These are all prior aries, and wherein, ito thin film refers to the indium oxide transparent conductive film of tin dope, and the FTO film refers to SnO
2The nesa coating of doped F.Certainly, above-mentioned nesa coating can also be selected from CuGaO
2, CuInO
2, SrCu
2O
2, or ZnO mixes B, Al, Ga, In etc.
In technique scheme, the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.Preferably, the thickness of described nesa coating is 100 ~ 500 nm.
Another kind of technical scheme correspondingly, a kind of preparation method of back contact silicon solar cell, comprise the steps:
(1) offer hole at silicon chip surface, then at its sensitive surface, carry out making herbs into wool;
(2) sensitive surface at above-mentioned silicon chip carries out painting source diffusion system knot, in sensitive surface and hole, forms PN junction;
(3) after removing phosphorus silicon or Pyrex, on the PN junction in above-mentioned sensitive surface and hole, nesa coating is set;
(4) peripheral etching, the nesa coating of removal silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) prepare perforation electrode, back of the body metal electrode, back of the body passivation field on the non-coated surface of above-mentioned silicon chip, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection.
In technique scheme, the quantity of described step (1) Hole is 2 ~ 500.
In technique scheme, the nesa coating in described step (3) is ito thin film, SnO
2Film, In
2O
3Film, ZnO film, Cd
2SnO
4Film or FTO film.
In technique scheme, the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1. the present invention has prepared a kind of new back contact silicon solar cell, with existing MWT battery, compares, and battery sensitive surface of the present invention does not have electrode to block, and has avoided the shading loss, has significantly improved electricity conversion; With existing EWT battery, compare, the hole that battery of the present invention need to be offered greatly reduces, thereby greatly reduces fragment rate, and has simplified preparation section.
2. preparation method of the present invention is simple, and does not need high-quality silicon chip, thus with low cost, be suitable for large-scale production.
3. the present invention utilizes nesa coating to replace the electrode on sensitive surface, has taken into account printing opacity and electric current collection, thereby there is no blocking of sensitive surface electrode, significantly improved electricity conversion, and unified appearance is attractive in appearance.
The accompanying drawing explanation
Accompanying drawing 1 ~ 8th, the preparation process schematic diagram of the embodiment of the present invention one;
Accompanying drawing 9 is structural representations of back contact silicon solar cell in the embodiment of the present invention one.
Wherein: 1, silicon chip; 2, PN junction; 3, electrically conducting transparent ito thin film; 4, hole; 5, antireflective coating; 6, perforation electrode; 7, back of the body metal electrode; 8, back of the body passivation field.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment mono-
Shown in Fig. 1 ~ 9, a kind of preparation method of back contact silicon solar cell, silicon chip is p-type, comprises the steps:
The first step, making herbs into wool, its objective is by chemical reaction and make the silicon chip surface of light originally form scraggly structure to extend the light propagation path surperficial at it, thus the absorption that improves 1 pair of light of silicon chip; After making herbs into wool, the structural representation of silicon chip as shown in Figure 1;
Second step is offered hole 4 on silicon chip, and number is 100, and its effect is the electric current of cell piece sensitive surface to be guided to the shady face of cell piece at the interior electrode that can arrange of hole 4, so just can be so that the positive pole of cell piece and negative pole all are positioned at the back side of cell piece; Can adopt the mode of laser, machine drilling or chemical corrosion to carry out perforate; After perforate, the structural representation of silicon chip as shown in Figure 2;
The 3rd step at the phosphorous slurry of silicon chip sensitive surface silk screen printing, forms PN junction 2 at sensitive surface after 800 ℃ of heat treatments, and hole 4 inwalls also form PN junction 2 simultaneously, then remove phosphorosilicate glass with hydrofluoric acid; Structural representation after the formation PN junction as shown in Figure 3;
The 4th step, the electrically conducting transparent ito thin film 3 that 500nm is thick is plated on PN junction, comprises hole 4 inwalls and silicon chips periphery, as shown in Figure 4; Here the purpose of electrically conducting transparent ito thin film is to replace traditional metal electrode, effectively collects the photoelectric current that the conduction sensitive surface produces, and does not block incident light; The method of plating ito thin film has a variety of, such as methods such as magnetron sputtering, organic metal vapour deposition, vacuum vapor deposition method, chemical vapour deposition technique, spraying process, sol-gel process, the auxiliary vapour depositions of electrostatic spray; In the present embodiment, ito thin film adopts the mode plated film of magnetron sputtering;
The 5th step, peripheral etching, purpose is to remove the electrically conducting transparent ito thin film of hole silicon chips periphery, avoids short circuit; In embodiments of the present invention, adopt the side etching 15min of plasma gas to silicon chip 1, wherein SF in plasma gas
6Flow be 200scm, O
2Flow be 30scm, N
2Flow be 300scm, pressure selection is 100Pa, glow power is chosen as 700W; Structural representation after the silicon chips periphery etching as shown in Figure 5;
The 6th step, plating silicon nitride anti-reflecting film 5 on electrically conducting transparent ito thin film 3, the effect of this film is the reflection that reduces sunlight, maximally utilises solar energy; In the present embodiment, adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, the plasma enhanced chemical vapor deposition method) form antireflective coating on silicon chip; The structural representation of coated with antireflection film 5 rear silicon chips as shown in Figure 6;
The 7th step, on the non-coated with antireflection face of silicon chip, silk screen printing perforation electrode 6 is as negative pole; In the present embodiment, can also perforation electrode 6 be deposited on silicon chip 1 by methods such as vacuum evaporation, sputters; Prepare perforation electrode 6 and electrically conducting transparent ito thin film 3 electric connections, its structural representation as shown in Figure 7;
The 8th step, on the non-coated with antireflection face of silicon chip, silk screen printing back of the body metal electrode 7 is as anodal; In the present embodiment, can also will carry on the back metal electrode 7 by methods such as vacuum evaporation, sputters is deposited on silicon chip; Prepare the structural representation of back electrode 7 as shown in Figure 8;
The 9th step, silk screen printing aluminium back of the body passivation field 8 on the non-coated with antireflection face of silicon chip; In the present embodiment, can also aluminium be carried on the back to the passivation field by methods such as vacuum evaporation, sputters is deposited on silicon chip; Prepare the structural representation of aluminium back of the body passivation field 8 as shown in Figure 9; Wherein, back of the body passivation field 8 and back of the body metal electrode 7 electric connections, the two and perforation electrode 6 only depend on the air insulation isolation.
Fig. 9 is the structural representation of the back contact silicon solar cell obtained prepared according to the methods of the invention.
Embodiment bis-
A kind of preparation method of back contact silicon solar cell, silicon chip is N-shaped, comprises the steps:
The first step, making herbs into wool; Its objective is by chemical reaction and make the silicon chip surface of light originally form scraggly structure to extend the light propagation path surperficial at it, thereby improve the absorption of silicon chip to light;
Second step is offered hole on silicon chip, and number is 60, and its effect is electrode can be set in through hole the electric current of cell piece sensitive surface is guided to the shady face of cell piece, so just can be so that the positive pole of cell piece and negative pole all are positioned at the back side of cell piece; In the present embodiment, can adopt the mode of laser, machine drilling or chemical corrosion to carry out perforate;
The 3rd step at the surface screen-printed boracic slurry of silicon chip, forms PN junction at sensitive surface after 800 ℃ of heat treatments, and the hole inwall also forms PN junction simultaneously, and removes Pyrex with hydrofluoric acid;
The 4th step, the thick electrically conducting transparent SnO by 300 nm
2: F film (FTO) is plated on PN junction, comprises hole inwall and silicon chips periphery; Here electrically conducting transparent SnO
2: the purpose of F film is to replace traditional metal electrode, effectively collects the photoelectric current that the conduction sensitive surface produces, and does not block incident light; Plating SnO
2: the method for F film has a variety of, such as methods such as magnetron sputtering, organic metal vapour deposition, vacuum vapor deposition method, chemical vapour deposition technique, spraying process, sol-gel process, the auxiliary vapour depositions of electrostatic spray; In an embodiment, SnO
2: the F film adopts the magnetically controlled sputter method plated film;
The 5th step, peripheral etching; Purpose is to remove peripheral electrically conducting transparent SnO
2: F film and PN junction, avoid short circuit; In an embodiment, adopt the side etching 15min of plasma gas to silicon chip, wherein SF in plasma gas
6Flow be 200scm, O
2Flow be 30scm, N
2Flow be 300scm, pressure selection is 100Pa, glow power is chosen as 700W;
The 6th step, adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, the plasma enhanced chemical vapor deposition method) at SnO
2: applying silicon oxide antireflective coating on the F film, the effect of this film is the reflection that reduces sunlight, maximally utilises solar energy; In the present embodiment, form antireflective coating on silicon chip;
The 7th step, on the non-coated with antireflection face of silicon chip, silk screen printing perforation silver electrode is as positive pole; In the present embodiment, can also by the methods such as vacuum evaporation, sputter by the perforation electrode deposition on silicon chip; Prepare perforation electrode and electrically conducting transparent SnO
2: the F Electrical is communicated with;
The 8th step, on the non-coated with antireflection face of silicon chip, silk screen printing back of the body silver electrode is as negative pole; In the present embodiment, can also back electrode be deposited on silicon chip by methods such as vacuum evaporation, sputters;
The 9th step, carry out silk screen printing phosphorus slurry at the non-coated with antireflection face of silicon chip and adulterate and use PECVD method grown silicon nitride, as compound back of the body passivation field; Wherein, the composite back passivation layer is communicated with back of the body silver electrode electricity, and the two and perforation silver electrode only depend on the air insulation isolation; Can obtain the back contact silicon solar cell.
The above is only the application's preferred implementation, makes those skilled in the art can understand or realize the application.Multiple modification to these embodiment will be apparent to one skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the application's spirit or scope, realization in other embodiments.Therefore, the application will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (2)
1. the preparation method of a back contact silicon solar cell, is characterized in that, comprises the steps:
(1) sensitive surface at silicon chip carries out making herbs into wool, then offers hole;
(2) sensitive surface at above-mentioned silicon chip carries out painting source diffusion system knot, in sensitive surface and hole, forms PN junction;
(3) after removing phosphorus silicon or Pyrex, on the PN junction in above-mentioned sensitive surface and hole, nesa coating is set;
(4) peripheral etching, the nesa coating of removal silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) prepare perforation electrode, back of the body metal electrode, back of the body passivation field on the non-coated surface of above-mentioned silicon chip, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection;
The quantity of described step (1) Hole is 9 ~ 100.
2. the preparation method of back contact silicon solar cell according to claim 1, it is characterized in that: the nesa coating in described step (3) is ito thin film, SnO
2Film, In
2O
3Film, ZnO film, Cd
2SnO
4Film or FTO film.
3, the preparation method of back contact silicon solar cell according to claim 1 is characterized in that: the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
4, the preparation method of back contact silicon solar cell according to claim 3 is characterized in that: the thickness of described nesa coating is 100 ~ 500 nm.
5,A kind of preparation method of back contact silicon solar cell, is characterized in that, comprises the steps:
(1) offer hole at silicon chip surface, then at its sensitive surface, carry out making herbs into wool;
(2) sensitive surface at above-mentioned silicon chip carries out painting source diffusion system knot, in sensitive surface and hole, forms PN junction;
(3) after removing phosphorus silicon or Pyrex, on the PN junction in above-mentioned sensitive surface and hole, nesa coating is set;
(4) peripheral etching, the nesa coating of removal silicon chips periphery; Then on the nesa coating of silicon chip sensitive surface, antireflective coating is established in plating;
(5) prepare perforation electrode, back of the body metal electrode, back of the body passivation field on the non-coated surface of above-mentioned silicon chip, can obtain described back contact silicon solar cell; Described perforation electrode and nesa coating electric connection;
The quantity of described step (1) Hole is 2 ~ 500.
6, the preparation method of back contact silicon solar cell according to claim 5 is characterized in that: the nesa coating in described step (3) is ito thin film, SnO
2Film, In
2O
3Film, ZnO film, Cd
2SnO
4Film or FTO film.
7, the preparation method of back contact silicon solar cell according to claim 5 is characterized in that: the thickness of the nesa coating in described step (3) is 80 ~ 1000 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103740324A CN102403406B (en) | 2011-11-22 | 2011-11-22 | Preparation method for back contact type silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103740324A CN102403406B (en) | 2011-11-22 | 2011-11-22 | Preparation method for back contact type silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102403406A CN102403406A (en) | 2012-04-04 |
| CN102403406B true CN102403406B (en) | 2013-12-04 |
Family
ID=45885413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103740324A Active CN102403406B (en) | 2011-11-22 | 2011-11-22 | Preparation method for back contact type silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102403406B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629641B (en) * | 2012-04-13 | 2014-08-06 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact silicon solar cell |
| CN102683494A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided back contact solar cell |
| CN102694069B (en) * | 2012-05-27 | 2015-05-20 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N-type double-sided back-contact crystalline silicon solar battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Back contact solar cell with integrated conductive vias and method of manufacture |
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back Contact Solar Module |
| CN102184976A (en) * | 2011-06-10 | 2011-09-14 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI415277B (en) * | 2009-11-20 | 2013-11-11 | Ind Tech Res Inst | Solar cell structure |
| NL2004310C2 (en) * | 2010-02-26 | 2011-08-30 | Stichting Energie | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method. |
-
2011
- 2011-11-22 CN CN2011103740324A patent/CN102403406B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Back contact solar cell with integrated conductive vias and method of manufacture |
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back Contact Solar Module |
| CN102184976A (en) * | 2011-06-10 | 2011-09-14 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102403406A (en) | 2012-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102208486B (en) | Preparation method of MWT (Metal Wrap Through) solar cell | |
| CN108807565A (en) | A kind of passivation contact electrode structure, applicable solar cell and production method | |
| CN102623517B (en) | Back contact type crystalline silicon solar cell and production method thereof | |
| JP2021061395A (en) | Solar cell and manufacturing method thereof | |
| CN105789342B (en) | A kind of metal oxide multilayer film back contacts crystal-silicon solar cell and preparation method thereof | |
| CN101651163B (en) | Thin film type solar cell and method for manufacturing the same | |
| CN101882650A (en) | Preparation method of solar cell with charge buried layer | |
| CN102468365A (en) | Method for manufacturing double-sided solar cell | |
| CN208806263U (en) | A kind of passivation contact electrode structure and its applicable solar battery | |
| CN102214719B (en) | Back contact heterojunction solar battery based on N-type silicon slice | |
| CN102332495A (en) | Fabrication method for crystalline silicon solar cell | |
| CN102956723B (en) | A kind of solar cell and preparation method thereof | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN102386254A (en) | Metal wrap through (MWT) back contact solar cell, preparation method and assembly thereof | |
| CN108666376A (en) | A kind of p-type back contacts solar cell and preparation method thereof | |
| CN114447025A (en) | Laminated perovskite solar cell and manufacturing method thereof | |
| CN102224601A (en) | Method for manufacturing solar cell | |
| CN103904138A (en) | Full back side contact crystalline silicon cell and preparation method thereof | |
| CN102185030A (en) | Preparation method of back contact HIT solar battery based on N-type silicon wafer | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| CN102403406B (en) | Preparation method for back contact type silicon solar cell | |
| KR20090075421A (en) | Solar cell | |
| CN108666379A (en) | A kind of p-type back contact solar cell and its preparation method | |
| CN202977438U (en) | Full back contact crystalline silicon cell | |
| CN102403404A (en) | Preparation method for back contact type photovoltaic cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee after: Artes sunshine Power Group Co. Ltd. Patentee after: Suzhou Canadian Solar Inc. Address before: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Suzhou Canadian Solar Inc. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |