CN103119694A - 掩蔽材料的去除 - Google Patents

掩蔽材料的去除 Download PDF

Info

Publication number
CN103119694A
CN103119694A CN2010800629333A CN201080062933A CN103119694A CN 103119694 A CN103119694 A CN 103119694A CN 2010800629333 A CN2010800629333 A CN 2010800629333A CN 201080062933 A CN201080062933 A CN 201080062933A CN 103119694 A CN103119694 A CN 103119694A
Authority
CN
China
Prior art keywords
cerium
solution
ammonium
resist
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800629333A
Other languages
English (en)
Chinese (zh)
Inventor
阿里·阿法扎里-阿达卡尼
托马斯·H·鲍姆
卡尔·E·博格斯
埃马纽尔·I·库珀
道格拉斯·塞沃
马修·科恩
马默德·科加斯泰
罗纳德·W·努内斯
乔治·加布里尔·托蒂尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Entegris Inc
Original Assignee
Advanced Technology Materials Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/636,015 external-priority patent/US8367555B2/en
Application filed by Advanced Technology Materials Inc, International Business Machines Corp filed Critical Advanced Technology Materials Inc
Publication of CN103119694A publication Critical patent/CN103119694A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010800629333A 2009-12-11 2010-12-10 掩蔽材料的去除 Pending CN103119694A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/636,015 2009-12-11
US12/636,015 US8367555B2 (en) 2009-12-11 2009-12-11 Removal of masking material
US35624210P 2010-06-18 2010-06-18
US61/356,242 2010-06-18
PCT/US2010/059800 WO2011072188A2 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage

Publications (1)

Publication Number Publication Date
CN103119694A true CN103119694A (zh) 2013-05-22

Family

ID=44146190

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800629333A Pending CN103119694A (zh) 2009-12-11 2010-12-10 掩蔽材料的去除

Country Status (7)

Country Link
EP (1) EP2510538A4 (fr)
JP (1) JP2013513824A (fr)
KR (1) KR20120108984A (fr)
CN (1) CN103119694A (fr)
SG (1) SG181642A1 (fr)
TW (1) TW201140254A (fr)
WO (1) WO2011072188A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487900A (zh) * 2012-05-18 2015-04-01 安格斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液
TWI899164B (zh) * 2020-02-25 2025-10-01 日商德山股份有限公司 釕之半導體用處理液

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012097143A2 (fr) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations utilisables en vue de l'élimination de particules produites par des solutions contenant du cérium
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
CN103235491A (zh) * 2013-04-07 2013-08-07 北京七星华创电子股份有限公司 一种抗蚀剂剥离液及其应用
WO2015070168A1 (fr) * 2013-11-11 2015-05-14 Tokyo Electron Limited Procédé et matériel pour l'élimination améliorée de polymère post-gravure et l'élimination de masque dur
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
CN106435616B (zh) * 2016-10-10 2018-09-07 深圳大学 一种TiNC膜的退镀液及退镀工艺
KR101971459B1 (ko) * 2017-06-05 2019-04-23 재원산업 주식회사 유기발광소자 제조용 도전 부재 세정용 조성물 및 이를 이용한 세정방법
WO2019151001A1 (fr) * 2018-02-05 2019-08-08 富士フイルム株式会社 Procédé de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et kit de traitement de substrat

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231803A (zh) * 1996-09-24 1999-10-13 罗伯特·博施有限公司 无线传输位置信息及有效信息的方法及发射/接收装置
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
US20050282391A1 (en) * 2004-06-16 2005-12-22 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064101A (ja) * 2000-08-21 2002-02-28 Casio Comput Co Ltd クロム層を有する配線の形成方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2003017465A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231803A (zh) * 1996-09-24 1999-10-13 罗伯特·博施有限公司 无线传输位置信息及有效信息的方法及发射/接收装置
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
US20050282391A1 (en) * 2004-06-16 2005-12-22 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487900A (zh) * 2012-05-18 2015-04-01 安格斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
CN104487900B (zh) * 2012-05-18 2019-07-23 恩特格里斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
TWI899164B (zh) * 2020-02-25 2025-10-01 日商德山股份有限公司 釕之半導體用處理液
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Also Published As

Publication number Publication date
WO2011072188A2 (fr) 2011-06-16
EP2510538A2 (fr) 2012-10-17
SG181642A1 (en) 2012-07-30
JP2013513824A (ja) 2013-04-22
EP2510538A4 (fr) 2014-03-26
WO2011072188A3 (fr) 2011-09-15
TW201140254A (en) 2011-11-16
KR20120108984A (ko) 2012-10-05

Similar Documents

Publication Publication Date Title
CN103119694A (zh) 掩蔽材料的去除
US10446389B2 (en) Formulations for the removal of particles generated by cerium-containing solutions
US8367555B2 (en) Removal of masking material
KR100368193B1 (ko) 수성 세정 조성물
CN1184299C (zh) 光刻胶洗涤组合物
JP4755060B2 (ja) 残留物を除去するための水性洗浄組成物及びそれを使用する方法
US6703319B1 (en) Compositions and methods for removing etch residue
CN101187789B (zh) 去除光致抗蚀剂、蚀刻残余物和barc的配制料
JP5449256B2 (ja) 水系洗浄組成物及びその使用方法
JP6707451B2 (ja) 表面の残留物を除去するための洗浄配合物
CN100529039C (zh) 干蚀刻后的洗涤液组合物及半导体装置的制造方法
CN101883688A (zh) 用来从半导体基板除去金属硬掩模蚀刻残余物的组合物
JP5146445B2 (ja) 洗浄用組成物、半導体素子の製造方法
JP2002543272A (ja) 半導体デバイス用の、有機残留物およびプラズマエッチングされた残留物を洗浄するための組成物
TW200925269A (en) Compounds for photoresist stripping
US20250069947A1 (en) Semiconductor device with composite barrier structure and method for fabricating the same
US12341054B2 (en) Method for fabricating semiconductor device with chelating agent
CN111902379B (zh) 清洗组合物
JP2008177532A (ja) 半導体ウェハーの処理方法
TW200304586A (en) Composite for stripping photoresist and the manufacturing method of semiconductor device using the same
TWI883535B (zh) 基板處理方法
Del Puppo et al. Photoresist removal using gaseous sulfur trioxide cleaning technology
JP5125636B2 (ja) 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
US20140187460A1 (en) Removal of masking material
KR20000001789A (ko) 반도체 장치의 세정 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ANGES INC.

Free format text: FORMER OWNER: ADVANCED TECHNOLOGY MATERIALS, INC.

Effective date: 20150409

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150409

Address after: Massachusetts, USA

Applicant after: MYKROLIS Corp.

Applicant after: International Business Machines Corp.

Address before: American Connecticut

Applicant before: Advanced Technology Materials, Inc.

Applicant before: International Business Machines Corp.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130522