EP2510538A4 - Élimination d'une matière de masquage - Google Patents

Élimination d'une matière de masquage

Info

Publication number
EP2510538A4
EP2510538A4 EP10836729.3A EP10836729A EP2510538A4 EP 2510538 A4 EP2510538 A4 EP 2510538A4 EP 10836729 A EP10836729 A EP 10836729A EP 2510538 A4 EP2510538 A4 EP 2510538A4
Authority
EP
European Patent Office
Prior art keywords
removal
masking material
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10836729.3A
Other languages
German (de)
English (en)
Other versions
EP2510538A2 (fr
Inventor
Ali Afzali-Ardakani
Thomas H Baum
Karl E Boggs
Emanuel I Cooper
Douglas Cywar
Matthew Kern
Mahmoud Khojasteh
George Gabriel Totir
Ronald W Nunes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
International Business Machines Corp
Original Assignee
Advanced Technology Materials Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/636,015 external-priority patent/US8367555B2/en
Application filed by Advanced Technology Materials Inc, International Business Machines Corp filed Critical Advanced Technology Materials Inc
Publication of EP2510538A2 publication Critical patent/EP2510538A2/fr
Publication of EP2510538A4 publication Critical patent/EP2510538A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP10836729.3A 2009-12-11 2010-12-10 Élimination d'une matière de masquage Withdrawn EP2510538A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/636,015 US8367555B2 (en) 2009-12-11 2009-12-11 Removal of masking material
US35624210P 2010-06-18 2010-06-18
PCT/US2010/059800 WO2011072188A2 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage

Publications (2)

Publication Number Publication Date
EP2510538A2 EP2510538A2 (fr) 2012-10-17
EP2510538A4 true EP2510538A4 (fr) 2014-03-26

Family

ID=44146190

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10836729.3A Withdrawn EP2510538A4 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage

Country Status (7)

Country Link
EP (1) EP2510538A4 (fr)
JP (1) JP2013513824A (fr)
KR (1) KR20120108984A (fr)
CN (1) CN103119694A (fr)
SG (1) SG181642A1 (fr)
TW (1) TW201140254A (fr)
WO (1) WO2011072188A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012097143A2 (fr) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations utilisables en vue de l'élimination de particules produites par des solutions contenant du cérium
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
JP2015517691A (ja) * 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
CN103235491A (zh) * 2013-04-07 2013-08-07 北京七星华创电子股份有限公司 一种抗蚀剂剥离液及其应用
WO2015070168A1 (fr) * 2013-11-11 2015-05-14 Tokyo Electron Limited Procédé et matériel pour l'élimination améliorée de polymère post-gravure et l'élimination de masque dur
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
CN106435616B (zh) * 2016-10-10 2018-09-07 深圳大学 一种TiNC膜的退镀液及退镀工艺
KR101971459B1 (ko) * 2017-06-05 2019-04-23 재원산업 주식회사 유기발광소자 제조용 도전 부재 세정용 조성물 및 이를 이용한 세정방법
WO2019151001A1 (fr) * 2018-02-05 2019-08-08 富士フイルム株式会社 Procédé de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et kit de traitement de substrat
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006113621A2 (fr) * 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Formulations pour le nettoyage de couches de photoresine implantees d'ions a partir de dispositifs microelectroniques
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19639093A1 (de) * 1996-09-24 1998-03-26 Bosch Gmbh Robert Verfahren zur drahtlosen Übertragung von Ortsinformationen und Nutzinformationen und Sende-/Empfangseinrichtung
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
JP2002064101A (ja) * 2000-08-21 2002-02-28 Casio Comput Co Ltd クロム層を有する配線の形成方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2003017465A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006113621A2 (fr) * 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Formulations pour le nettoyage de couches de photoresine implantees d'ions a partir de dispositifs microelectroniques
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Also Published As

Publication number Publication date
WO2011072188A2 (fr) 2011-06-16
EP2510538A2 (fr) 2012-10-17
SG181642A1 (en) 2012-07-30
CN103119694A (zh) 2013-05-22
JP2013513824A (ja) 2013-04-22
WO2011072188A3 (fr) 2011-09-15
TW201140254A (en) 2011-11-16
KR20120108984A (ko) 2012-10-05

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20120704

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CYWAR, DOUGLAS

Inventor name: BOGGS, KARL E.

Inventor name: KERN, MATTHEW

Inventor name: BAUM, THOMAS H.

Inventor name: TOTIR, GEORGE GABRIEL

Inventor name: AFZALI-ARDAKANI, ALI

Inventor name: NUNES, RONALD W.

Inventor name: COOPER, EMANUEL I.

Inventor name: KHOJASTEH, MAHMOUD

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NUNES, RONALD W.

Inventor name: AFZALI-ARDAKANI, ALI

Inventor name: TOTIR, GEORGE GABRIEL

Inventor name: KHOJASTEH, MAHMOUD

Inventor name: COOPER, EMANUEL I.

Inventor name: BOGGS, KARL E.

Inventor name: BAUM, THOMAS H.

Inventor name: CYWAR, DOUGLAS

Inventor name: KERN, MATTHEW

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20140225

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/311 20060101AFI20140219BHEP

Ipc: G03F 7/42 20060101ALI20140219BHEP

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 20140701