CN103262266A - 包括选择性发射极的太阳能电池的制造方法 - Google Patents

包括选择性发射极的太阳能电池的制造方法 Download PDF

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Publication number
CN103262266A
CN103262266A CN2011800480183A CN201180048018A CN103262266A CN 103262266 A CN103262266 A CN 103262266A CN 2011800480183 A CN2011800480183 A CN 2011800480183A CN 201180048018 A CN201180048018 A CN 201180048018A CN 103262266 A CN103262266 A CN 103262266A
Authority
CN
China
Prior art keywords
solar cell
cell substrate
glassy layer
dopant
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800480183A
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English (en)
Chinese (zh)
Inventor
乔兰塔·奥考斯卡-奥策尔
乔格·伊森伯格
安德里亚斯·特佩
马蒂亚斯·盖格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102010033030A external-priority patent/DE102010033030A1/de
Priority claimed from DE102010054182A external-priority patent/DE102010054182A1/de
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of CN103262266A publication Critical patent/CN103262266A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2011800480183A 2010-08-02 2011-08-02 包括选择性发射极的太阳能电池的制造方法 Pending CN103262266A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102010033030A DE102010033030A1 (de) 2010-08-02 2010-08-02 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102010033030.2 2010-08-02
DE102010044313 2010-09-03
DE102010044313.1 2010-09-03
DE102010054182.6 2010-12-10
DE102010054182A DE102010054182A1 (de) 2010-09-03 2010-12-10 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
PCT/DE2011/075181 WO2012022349A2 (de) 2010-08-02 2011-08-02 Verfahren zur herstellung einer solarzelle mit einem selektiven emitter

Publications (1)

Publication Number Publication Date
CN103262266A true CN103262266A (zh) 2013-08-21

Family

ID=45605464

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800480183A Pending CN103262266A (zh) 2010-08-02 2011-08-02 包括选择性发射极的太阳能电池的制造方法

Country Status (4)

Country Link
EP (1) EP2601691A2 (de)
KR (1) KR20130108271A (de)
CN (1) CN103262266A (de)
WO (1) WO2012022349A2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394012A (zh) * 2017-08-18 2017-11-24 常州亿晶光电科技有限公司 一种硅片激光掺杂se的扩散工艺
CN110896116A (zh) * 2018-09-10 2020-03-20 浙江清华柔性电子技术研究院 晶体硅太阳能电池扩散层及其制备方法、电池、组件
CN111180530A (zh) * 2019-12-27 2020-05-19 天津爱旭太阳能科技有限公司 一种选择性发射极电池的制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664015B2 (en) * 2011-10-13 2014-03-04 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
DE102012018746A1 (de) * 2012-09-21 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
CN104157736A (zh) * 2014-08-15 2014-11-19 内蒙古日月太阳能科技有限责任公司 太阳能电池制备方法及太阳能电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010010813A1 (de) 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394012A (zh) * 2017-08-18 2017-11-24 常州亿晶光电科技有限公司 一种硅片激光掺杂se的扩散工艺
CN110896116A (zh) * 2018-09-10 2020-03-20 浙江清华柔性电子技术研究院 晶体硅太阳能电池扩散层及其制备方法、电池、组件
CN111180530A (zh) * 2019-12-27 2020-05-19 天津爱旭太阳能科技有限公司 一种选择性发射极电池的制备方法

Also Published As

Publication number Publication date
WO2012022349A3 (de) 2013-07-18
EP2601691A2 (de) 2013-06-12
KR20130108271A (ko) 2013-10-02
WO2012022349A2 (de) 2012-02-23

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Application publication date: 20130821