CN103548146A - 用于半导体器件的双有源层及其制造方法 - Google Patents

用于半导体器件的双有源层及其制造方法 Download PDF

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Publication number
CN103548146A
CN103548146A CN201280017495.8A CN201280017495A CN103548146A CN 103548146 A CN103548146 A CN 103548146A CN 201280017495 A CN201280017495 A CN 201280017495A CN 103548146 A CN103548146 A CN 103548146A
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CN
China
Prior art keywords
layer
active layer
over
providing
substrate
Prior art date
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Pending
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CN201280017495.8A
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English (en)
Chinese (zh)
Inventor
M.马尔斯
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University of Arizona
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University of Arizona
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Application filed by University of Arizona filed Critical University of Arizona
Publication of CN103548146A publication Critical patent/CN103548146A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201280017495.8A 2011-04-07 2012-04-05 用于半导体器件的双有源层及其制造方法 Pending CN103548146A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161472992P 2011-04-07 2011-04-07
US61/472,992 2011-04-07
PCT/US2012/032388 WO2012138903A2 (fr) 2011-04-07 2012-04-05 Couches actives doubles pour dispositifs à semi-conducteur et ses procédés de fabrication

Publications (1)

Publication Number Publication Date
CN103548146A true CN103548146A (zh) 2014-01-29

Family

ID=46969824

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280017495.8A Pending CN103548146A (zh) 2011-04-07 2012-04-05 用于半导体器件的双有源层及其制造方法

Country Status (6)

Country Link
EP (1) EP2695195A4 (fr)
JP (1) JP2014513425A (fr)
KR (1) KR20130138328A (fr)
CN (1) CN103548146A (fr)
SG (1) SG194073A1 (fr)
WO (1) WO2012138903A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107093557A (zh) * 2017-04-26 2017-08-25 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN107527956A (zh) * 2017-08-17 2017-12-29 京东方科技集团股份有限公司 薄膜晶体管和制备薄膜晶体管的方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
KR102127781B1 (ko) * 2013-11-29 2020-06-30 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
WO2015156891A2 (fr) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Procédé de fabrication d'un dispositif à semi-conducteur souple et dispositif à semi-conducteur souple associé
WO2017034644A2 (fr) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Procédé permettant d'obtenir un dispositif électronique et dispositif électronique correspondant
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
EP3143641A4 (fr) 2014-05-13 2018-01-17 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Procédé permettant d'obtenir un dispositif électronique et dispositif électronique correspondant
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
WO2017218898A2 (fr) 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Dispositifs électroniques et procédés connexes
CN108807547B (zh) * 2017-05-05 2021-01-22 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及其制备方法
CN108508643A (zh) * 2018-04-03 2018-09-07 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224479A (ja) * 2008-03-14 2009-10-01 Fujifilm Corp 薄膜電界効果型トランジスタおよびその製造方法
US20100219410A1 (en) * 2009-02-27 2010-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101908489A (zh) * 2009-06-02 2010-12-08 乐金显示有限公司 氧化物薄膜晶体管的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4177993B2 (ja) * 2002-04-18 2008-11-05 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5171178B2 (ja) * 2007-09-13 2013-03-27 富士フイルム株式会社 イメージセンサ及びその製造方法
JP5258467B2 (ja) * 2008-09-11 2013-08-07 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5521034B2 (ja) * 2009-05-29 2014-06-11 アリゾナ・ボード・オブ・リージェンツ，フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステート・ユニバーシティ フレキシブル半導体デバイスを高温で提供する方法およびそのフレキシブル半導体デバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224479A (ja) * 2008-03-14 2009-10-01 Fujifilm Corp 薄膜電界効果型トランジスタおよびその製造方法
US20100219410A1 (en) * 2009-02-27 2010-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101908489A (zh) * 2009-06-02 2010-12-08 乐金显示有限公司 氧化物薄膜晶体管的制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107093557A (zh) * 2017-04-26 2017-08-25 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN107093557B (zh) * 2017-04-26 2020-04-21 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN107527956A (zh) * 2017-08-17 2017-12-29 京东方科技集团股份有限公司 薄膜晶体管和制备薄膜晶体管的方法

Also Published As

Publication number Publication date
WO2012138903A3 (fr) 2013-01-31
EP2695195A4 (fr) 2014-09-17
WO2012138903A2 (fr) 2012-10-11
EP2695195A2 (fr) 2014-02-12
KR20130138328A (ko) 2013-12-18
SG194073A1 (en) 2013-11-29
JP2014513425A (ja) 2014-05-29

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Application publication date: 20140129