CN104233473A - Seed crystal melting height measurement device for universal ingot furnace and measurement method therefor - Google Patents
Seed crystal melting height measurement device for universal ingot furnace and measurement method therefor Download PDFInfo
- Publication number
- CN104233473A CN104233473A CN201410517436.8A CN201410517436A CN104233473A CN 104233473 A CN104233473 A CN 104233473A CN 201410517436 A CN201410517436 A CN 201410517436A CN 104233473 A CN104233473 A CN 104233473A
- Authority
- CN
- China
- Prior art keywords
- height
- crystal bar
- long
- seed crystal
- ingot furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 159
- 238000005259 measurement Methods 0.000 title abstract description 11
- 238000002844 melting Methods 0.000 title abstract description 5
- 230000008018 melting Effects 0.000 title abstract description 5
- 238000000691 measurement method Methods 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000010453 quartz Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 19
- 238000009434 installation Methods 0.000 claims description 13
- 239000004519 grease Substances 0.000 claims description 8
- 238000012856 packing Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005266 casting Methods 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000000523 sample Substances 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000004484 Briquette Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a seed crystal melting height measurement device for a universal ingot furnace and a measurement method therefor. The measurement method comprises the following specific steps: arranging a measurement device with good leakproofness at a cooling argon buckling portion at the top of an ingot furnace, fixing a long quartz crystal bar with a customized length on the measurement device, during the measuring process of the seed crystal height, manually adjusting the height of the long quartz crystal bar, and calculating the melting length of the seed crystal through the declining height of the long quartz crystal bar. The measurement device and the measurement method disclosed by the invention overcome the technical problem that in the prior art, the efficient ingot casting technology cannot be applied to the ingot furnace without a probe hole to measure the seed crystal melting height; the long quartz crystal bar with the customized length avoids the potential safety hazards caused by over high long quartz crystal bar and waste of the quartz raw material.
Description
Technical field
The present invention relates to the brilliant measuring apparatus field of photovoltaic art ingot casting furnace superintendent, particularly, relate to the measuring apparatus for general ingot furnace seed crystal fusing height and measuring method.
Background technology
Polysilicon is current topmost photovoltaic material, and polysilicon mostly takes directional solidification processes to prepare, casting polycrystalline silicon has the advantages such as easy and simple to handle, single feeds intake greatly, production cost is low compared with pulling of crystals, but there is a large amount of crystal boundaries and defect in polysilicon in castingprocesses, crystal boundary and defect can introduce deep energy level in silicon forbidden band, the deathnium of easy formation photogenerated minority carriers, and then the photoelectric transformation efficiency reducing polycrystalline silicon battery plate.Therefore, casting polycrystalline silicon number of grain boundaries how is reduced and defect concentration improves the research focus of polycrystal silicon cell photoelectric transformation efficiency at present.
At present, cast in the industry the method that high quality polysilicon generally adopts seed crystal seeding, one adopts monocrystalline silico briquette as seed crystal, and monocrystal seeding can reduce number of grain boundaries and defect concentration, effectively improves the photoelectric transformation efficiency of silicon chip quality and polycrystal silicon cell; But monocrystalline adds the production cost of silicon chip as seed crystal, further battery needs to adopt alkali making herbs into wool, increases production difficulty; Another kind adopts silicon chip fragment in production process as seed crystal, do not increase any production cost, just can reach the object of cost efficiency compared with conventional foundry ingot.
No matter be adopt monocrystalline or fragment as seed crystal, all relate to the requirement to seed crystal fusing extent control, only guaranteed seed portion fusing just can grow high-quality silicon ingot, measure seed crystal fusing fusing degree and become the principal element determining Ingot quality, measure with the open long crystal bar of quartz when measuring seed crystal fusing height, adopt the long crystal bar test of quartz that is high-purity, high temperature resistant, even thickness in molten silicon, measure the height that furnace chamber remains quartzy long crystal bar outward, indirect calculation goes out the fusing height of polysilicon.The current producer of ingot furnace is in the industry many, as U.S. GT, Germany PVA, domestic Zhejiang crystalline substance is contained, capital fortune is logical etc., GT, the ingot furnaces such as brilliant victory are built-in with the exploration hole of quartzy long crystal bar, and PVA polycrystalline silicon ingot or purifying furnace needs custom probe aperture apparatus, and different ingot furnace furnace chamber height differs, existing is measure on the ingot furnace being configured with exploration hole to the measurement of seed crystal fusing height in ingot furnace, long for quartz crystal bar is inserted and secured in corresponding exploration hole, the fusing height of seed crystal in ingot furnace is judged by the falling head calculating quartzy long crystal bar, the ingot furnace not configuring exploration hole then cannot carry out the measurement of seed crystal fusing height, existing measuring method cannot promote efficient ingot casting technology on this kind of ingot furnace, therefore, existing measuring method is not suitable for the measurement of seed crystal fusing height in general ingot furnace.
Summary of the invention
Technical problem to be solved by this invention is to provide the measuring apparatus and the measuring method that melt height for general ingot furnace seed crystal, overcomes existing measuring method and cannot apply the technical problem that efficient ingot casting technology measures seed crystal fusing height on the ingot furnace not configuring exploration hole.
The present invention's adopted technical scheme that solves the problem is: for the measuring apparatus of general ingot furnace seed crystal fusing height, comprise exploration hole interface pedestal, stationary installation, exploration hole interface pedestal offers fixed orifices, the outer cylinder of stationary installation one end is set to helicitic texture, the other end is connected with exploration hole interface pedestal, exploration hole interface pedestal and stationary installation inside are provided with through hole, stationary installation is also provided with the nut coordinated with sealing-ring, metal gasket, pass through nut, long for quartz crystal bar is fixed in through hole by the cooperation of metal gasket and helicitic texture, described exploration hole interface pedestal is arranged on ingot furnace top open part.Long for quartz crystal bar is inserted in through hole, sealing-ring is placed under metal gasket, again nut sleeve be located at helicitic texture and slowly tighten, metal gasket press seal circle is made to fix quartzy long crystal bar, realize the sealing of quartzy long crystal bar and measuring apparatus, ingot furnace top open part is the cooling argon gas export of ingot furnace, the circular flange of measuring apparatus screw or exploration hole interface pedestal is fixed on ingot furnace top open part, realize the sealing between measuring apparatus and ingot furnace, so, melting measuring process highly at whole seed crystal is seal in intact environment at one; During measurement, unscrew nut, adjust the height of quartzy long crystal bar, manual detection when contacting seed crystal, measures and records the height of quartzy long crystal bar, the fusing of seed crystal thereupon, the height of the long crystal bar of manual setting quartz gradually, until whole seed crystal melting process terminates, measure and record the height of quartzy long crystal bar, the difference of altitude of quartzy long crystal bar is the height of seed crystal fusing; Afterwards, determine that quartzy long crystal bar puts in order the position at place, guarantee deformation to occur bottom quartzy long crystal bar during ingot casting, the cooling argon gas in furnace chamber shields to the long crystal bar of quartz; By arranging a measuring apparatus at the cooling argon gas export of ingot furnace top of chamber, even if make also can apply efficient ingot casting technology to measure seed crystal fusing height at the ingot furnace not arranging exploration hole, instant invention overcomes prior art and cannot apply the technical problem that efficient ingot casting technology measures seed crystal fusing height on the ingot furnace not configuring exploration hole.
Further, the length of the long crystal bar of quartz is that the height of the long crystal bar of the quartz customized is the furnace chamber height of described ingot furnace, exploration hole interface height, hand-held height sum deduct seed crystal height, quartz crucible height, graphite bottom plate heights sum according to specific table customization height.The actual height of the furnace chamber of ingot furnace when furnace chamber height is practical application, exploration hole interface height is the height of the measuring apparatus of actual measurement, hand-held height is the height of the long crystal bar of quartz being exposed at measuring apparatus outside, seed crystal height is the elemental height of seed crystal, and quartz crucible height, graphite bottom plate heights are respectively the quartz crucible height, the graphite bottom plate heights that use ingot furnace to coordinate with reality, the long crystal bar standard size of quartz measuring in the industry seed crystal fusing height is at present that diameter is about 9mm, length is about 1825mm, and different brands ingot furnace furnace chamber height is different, 1825mm length is for long some ingot furnace, the long crystal bar of quartz puts in order the outer excessive height of rear furnace chamber, certain potential safety hazard is there is in this to ingot casting, and bring unnecessary difficulty to elevation carrection, quartzy long crystal bar is long in addition wastes material, add production cost, the different ingot furnace key distinction is that furnace roof is to DS radiating block height and furnace roof, exploration hole height is different with graphite bottom plate heights, the long boule length of industry universal is improper to some ingot furnaces, therefore the long crystal bar proposed for different ingot furnace customization different lengths is necessary, therefore, the present invention is first according to ingot furnace used in actual seed crystal melting process, exploration hole interface arrangement, quartz crucible, the height of graphite base plate and hand-held height calculate the height of the long crystal bar of required quartz, in addition, the long crystal bar ride out of quartz is no more than 1000mm, be convenient to the measurement that quartzy long crystal bar puts in order position, customize the long crystal bar of quartz of corresponding height again, the too high potential safety hazard caused of quartzy long crystal bar is avoided by the height customizing quartzy long crystal bar, and the waste of silica starting material.
Further, described hand-held height is 150 ~ 400mm.Quartz long crystal bar reserve certain hand-held height, be convenient to manual setting quartz long crystal bar height, suitable hand-held height convenient operation, make measure time operate safer, measure more accurate.
Further, exploration hole interface pedestal bottom offer with rubber packing with the use of groove.The groove of exploration hole interface pedestal bottom and rubber packing with the use of, increase the cushion effect of the through hole contact position of quartzy long crystal bar and gaging hole interface pedestal, avoid quartzy long crystal bar impaired in artificial adjustment process.
Further, appropriate vacuum grease smeared by rubber packing.To make between rubber packing and groove fixing more stable, better tightness, prevents gas leakage.
Further, appropriate vacuum grease smeared by sealing-ring.The stopping property that vacuum grease can strengthen quartzy long crystal bar and exploration hole interface arrangement further smeared by sealing-ring, prevents gas leakage.
For the measuring method of the measuring apparatus of general ingot furnace seed crystal fusing height, comprise the following steps:
First, long for the quartz of customized lengths crystal bar is inserted in through hole, lentamente long for quartz crystal bar is moved down, until quartzy long crystal bar touches the seed crystal in ingot furnace, sealing-ring is placed under metal gasket, again nut sleeve be located at helicitic texture and slowly tighten, making metal gasket press seal circle fix quartzy long crystal bar, record the elemental height of quartzy long crystal bar;
Secondly, ingot furnace is heated, makes the seed crystal melted by heat in stove, in measuring process, unscrew the height of the long crystal bar of nut manual regulation quartz, quartzy long crystal bar is contacted with seed crystal all the time in measuring process, and records the falling head of quartzy long crystal bar;
Then, calculated the fusing height of seed crystal by the height of the decline of the long crystal bar of quartz, when the height of seed crystal fusing meets the requirements, measuring process terminates, and stops heating, records the height of quartzy long crystal bar;
Finally, carried by long for quartz crystal bar to the quartzy long crystal bar of argon shield cooling, long for quartz crystal bar is fixed on argon shield district by fastening nut.
To sum up, the invention has the beneficial effects as follows:
1, the present invention is by arranging a measuring apparatus at the cooling argon gas export of ingot furnace top of chamber, even if make also can apply efficient ingot casting technology to measure seed crystal fusing height on the ingot furnace not arranging exploration hole, overcome prior art and cannot apply the technical problem that efficient ingot casting technology measures seed crystal fusing height on the ingot furnace not configuring exploration hole.
2, the present invention avoids the too high potential safety hazard caused of quartzy long crystal bar by the height customizing quartzy long crystal bar.
3, the present invention avoids the waste of the too high silica starting material caused of quartzy long crystal bar by the height customizing quartzy long crystal bar.
4, the present invention is by smearing vacuum grease to sealing-ring, improves the stopping property of quartzy long crystal bar and exploration hole interface arrangement.
Accompanying drawing explanation
Fig. 1 is nut;
Fig. 2 is metal gasket;
Fig. 3 is measuring apparatus schematic diagram;
Fig. 4 is measuring apparatus upward view;
Fig. 5 is metal closures.
Mark and corresponding component title in accompanying drawing:
1-nut; 2-metal gasket; 3-stationary installation; 4-exploration hole interface pedestal; 5-fixed orifices; 6-groove; 7-through hole; 8-metal closures, 31-helicitic texture.
Embodiment
Below in conjunction with embodiment and accompanying drawing, to the detailed description further of the present invention's do, but embodiments of the present invention are not limited thereto; Those skilled in the art also can make many distortion and improvement on basis of the present invention, the change of material, the change of size dimension, and the configuration aspects done on basis of the present invention is changed accordingly and all should be considered as protection scope of the present invention.
Embodiment:
As shown in Fig. 1 to 5, the present invention relates to the measuring apparatus for general ingot furnace seed crystal fusing height, comprise exploration hole interface pedestal 4, stationary installation 3, exploration hole interface pedestal 4 offers fixed orifices 5, the outer cylinder of stationary installation 3 one end is set to helicitic texture 31, the other end is connected with exploration hole interface pedestal 4, exploration hole interface pedestal 4 and stationary installation 3 inside are provided with through hole 7, stationary installation 3 is also provided with the nut 1 coordinated with sealing-ring, metal gasket 2, by nut 1, long for quartz crystal bar is fixed in through hole 7 by the cooperation of metal gasket 2 and helicitic texture 31, appropriate vacuum grease smeared by sealing-ring, exploration hole interface pedestal 4 is arranged on ingot furnace top open part, the long crystal bar of quartz is the quartz pushrod according to specific table customization height, the height of the long crystal bar of the quartz customized is the furnace chamber height of ingot furnace, exploration hole interface height, hand-held height sum deducts seed crystal height, quartz crucible height, graphite bottom plate heights sum, hand-held height is 150-400mm, exploration hole interface pedestal 4 bottom offer with rubber packing with the use of groove 6, appropriate vacuum grease smeared by rubber packing, when need not detect fusing for a long time under casting ingot process, long for quartz crystal bar can be replaced with metal closures 8 and be used for sealing.
As shown in Figures 1 to 3, the invention still further relates to the measuring method of the measuring apparatus for general ingot furnace seed crystal fusing height, comprise the following steps:
First, long for the quartz of customized lengths crystal bar is inserted in through hole 7, lentamente long for quartz crystal bar is moved down, until quartzy long crystal bar touches the seed crystal in ingot furnace, metal gasket places sealing-ring 2 times, again nut 1 be set in helicitic texture 31 and slowly tighten, making metal gasket 2 press seal circle fix quartzy long crystal bar, record the elemental height of quartzy long crystal bar;
Secondly, ingot furnace is heated, makes the seed crystal melted by heat in stove, in measuring process, unscrew the height of the long crystal bar of nut 1 manual regulation quartz, quartzy long crystal bar is contacted with seed crystal all the time in measuring process, and records the falling head of quartzy long crystal bar;
Then, calculated the fusing height of seed crystal by the height of the decline of the long crystal bar of quartz, when the height of seed crystal fusing meets the requirements, measuring process terminates, and stops heating, records the height of quartzy long crystal bar;
Finally, carried by long for quartz crystal bar to the quartzy long crystal bar of argon shield cooling, long for quartz crystal bar is fixed on argon shield district by fastening nut 1.
The measuring method of seed crystal fusing height extends on the PVA ingot furnace that can not directly measure or the ingot furnace not having device exploration hole by the present invention, and the present invention is that this type of ingot furnace is provided with general measuring apparatus.
As mentioned above, the present invention can be realized preferably.
Claims (7)
1. for the measuring apparatus of general ingot furnace seed crystal fusing height, comprise exploration hole interface pedestal (4), stationary installation (3), exploration hole interface pedestal (4) offers fixed orifices (5), the outer cylinder of stationary installation (3) one end is set to helicitic texture (31), the other end is connected with exploration hole interface pedestal (4), exploration hole interface pedestal (4) and stationary installation (3) inside are provided with through hole (7), it is characterized in that, described stationary installation (3) is also provided with the nut (1) coordinated with sealing-ring, metal gasket (2), by nut (1), long for quartz crystal bar is fixed in through hole (7) by the cooperation of metal gasket (2) and helicitic texture (31), described exploration hole interface pedestal (4) is arranged on ingot furnace top open part.
2. the measuring apparatus for general ingot furnace seed crystal fusing height according to claim 1, it is characterized in that, the length of the long crystal bar of described quartz is that the height of the long crystal bar of the quartz customized is the furnace chamber height of described ingot furnace, exploration hole interface height, hand-held height sum deduct seed crystal height, quartz crucible height, graphite bottom plate heights sum according to specific table customization height.
3. the measuring apparatus for general ingot furnace seed crystal fusing height according to claim 2, it is characterized in that, described hand-held height is 150 ~ 400mm.
4. the measuring apparatus for general ingot furnace seed crystal fusing height according to claim 1, is characterized in that, exploration hole interface pedestal (4) bottom offer with rubber packing with the use of groove (6).
5. the measuring apparatus for general ingot furnace seed crystal fusing height according to claim 4, it is characterized in that, appropriate vacuum grease smeared by described rubber packing.
6., according to the arbitrary described measuring apparatus for general ingot furnace seed crystal fusing height of claim 1 to 5, it is characterized in that, appropriate vacuum grease smeared by described sealing-ring.
7., for the measuring method of the measuring apparatus of general ingot furnace seed crystal fusing height, it is characterized in that, comprise the following steps:
First, long for the quartz of customized lengths crystal bar is inserted in through hole (7), lentamente long for quartz crystal bar is moved down, until quartzy long crystal bar touches the seed crystal in ingot furnace, metal gasket places sealing-ring under (2), again nut (1) be set in helicitic texture (31) and slowly tighten, making metal gasket (2) press seal circle fix quartzy long crystal bar, record the elemental height of quartzy long crystal bar;
Secondly, ingot furnace is heated, makes the seed crystal melted by heat in stove, in measuring process, unscrew the height of the long crystal bar of nut (1) manual regulation quartz, quartzy long crystal bar is contacted with seed crystal all the time in measuring process, and records the falling head of quartzy long crystal bar;
Then, calculated the fusing height of seed crystal by the height of the decline of the long crystal bar of quartz, when the height of seed crystal fusing meets the requirements, measuring process terminates, and stops heating, records the height of quartzy long crystal bar;
Finally, carried by long for quartz crystal bar to the quartzy long crystal bar of argon shield cooling, long for quartz crystal bar is fixed on argon shield district by fastening nut (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410517436.8A CN104233473B (en) | 2014-09-30 | 2014-09-30 | Measurement apparatus and measuring method for general ingot furnace seed crystal fusing height |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410517436.8A CN104233473B (en) | 2014-09-30 | 2014-09-30 | Measurement apparatus and measuring method for general ingot furnace seed crystal fusing height |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104233473A true CN104233473A (en) | 2014-12-24 |
| CN104233473B CN104233473B (en) | 2016-08-24 |
Family
ID=52222339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410517436.8A Expired - Fee Related CN104233473B (en) | 2014-09-30 | 2014-09-30 | Measurement apparatus and measuring method for general ingot furnace seed crystal fusing height |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104233473B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06234592A (en) * | 1985-01-14 | 1994-08-23 | Komatsu Electron Metals Co Ltd | Production of semiconductor silicon single crystal |
| CN202099411U (en) * | 2011-04-06 | 2012-01-04 | 镇江荣德新能源科技有限公司 | Automatic measuring device for crystal growth speed of multi-crystal furnace |
| CN102692199A (en) * | 2012-06-11 | 2012-09-26 | 苏州禹石自动化工程技术有限公司 | Unfused silicon ingot height measuring system |
| CN202482491U (en) * | 2012-02-03 | 2012-10-10 | 昆山中辰矽晶有限公司 | Height analysis apparatus |
| CN202755099U (en) * | 2012-09-06 | 2013-02-27 | 镇江荣德新能源科技有限公司 | Solid liquid interface determination device for silicon ingot furnace |
| CN203144556U (en) * | 2013-02-21 | 2013-08-21 | 无锡开日能源科技股份有限公司 | Device for measuring height of crystal |
| CN103409797A (en) * | 2013-08-27 | 2013-11-27 | 天威新能源控股有限公司 | Device for measuring long crystal bar of ingot furnace |
| CN203382851U (en) * | 2013-08-01 | 2014-01-08 | 安徽大晟新能源设备科技有限公司 | Testing device for melting thickness of seed crystals of pseudo-single crystal ingot furnace |
| CN203384363U (en) * | 2013-07-25 | 2014-01-08 | 天津市亚安科技股份有限公司 | Nut sealing structure |
| CN103668449A (en) * | 2012-09-06 | 2014-03-26 | 镇江荣德新能源科技有限公司 | Solid-liquid interface determination device for silicon ingot furnace |
| CN203728966U (en) * | 2014-03-07 | 2014-07-23 | 江苏华盛天龙光电设备股份有限公司 | Crystal measurement device of polycrystal furnace |
| TW201432102A (en) * | 2013-02-08 | 2014-08-16 | Sino American Silicon Prod Inc | Ingot measurement rod |
| CN204058658U (en) * | 2014-09-30 | 2014-12-31 | 天威新能源控股有限公司 | A kind of measuring apparatus for general ingot furnace seed crystal fusing height |
-
2014
- 2014-09-30 CN CN201410517436.8A patent/CN104233473B/en not_active Expired - Fee Related
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06234592A (en) * | 1985-01-14 | 1994-08-23 | Komatsu Electron Metals Co Ltd | Production of semiconductor silicon single crystal |
| CN202099411U (en) * | 2011-04-06 | 2012-01-04 | 镇江荣德新能源科技有限公司 | Automatic measuring device for crystal growth speed of multi-crystal furnace |
| CN202482491U (en) * | 2012-02-03 | 2012-10-10 | 昆山中辰矽晶有限公司 | Height analysis apparatus |
| CN102692199A (en) * | 2012-06-11 | 2012-09-26 | 苏州禹石自动化工程技术有限公司 | Unfused silicon ingot height measuring system |
| CN103668449A (en) * | 2012-09-06 | 2014-03-26 | 镇江荣德新能源科技有限公司 | Solid-liquid interface determination device for silicon ingot furnace |
| CN202755099U (en) * | 2012-09-06 | 2013-02-27 | 镇江荣德新能源科技有限公司 | Solid liquid interface determination device for silicon ingot furnace |
| TW201432102A (en) * | 2013-02-08 | 2014-08-16 | Sino American Silicon Prod Inc | Ingot measurement rod |
| CN203144556U (en) * | 2013-02-21 | 2013-08-21 | 无锡开日能源科技股份有限公司 | Device for measuring height of crystal |
| CN203384363U (en) * | 2013-07-25 | 2014-01-08 | 天津市亚安科技股份有限公司 | Nut sealing structure |
| CN203382851U (en) * | 2013-08-01 | 2014-01-08 | 安徽大晟新能源设备科技有限公司 | Testing device for melting thickness of seed crystals of pseudo-single crystal ingot furnace |
| CN103409797A (en) * | 2013-08-27 | 2013-11-27 | 天威新能源控股有限公司 | Device for measuring long crystal bar of ingot furnace |
| CN203728966U (en) * | 2014-03-07 | 2014-07-23 | 江苏华盛天龙光电设备股份有限公司 | Crystal measurement device of polycrystal furnace |
| CN204058658U (en) * | 2014-09-30 | 2014-12-31 | 天威新能源控股有限公司 | A kind of measuring apparatus for general ingot furnace seed crystal fusing height |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104233473B (en) | 2016-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101148777B (en) | Method and device for growing gallium-mixing silicon monocrystal by czochralski method | |
| CN202139324U (en) | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace | |
| CN103103604A (en) | Manufacturing method of large-size C-oriented sapphire crystals | |
| CN102936747A (en) | Method for casting ingot of pseudo-single crystal through large-sized crucible | |
| CN201058893Y (en) | Device for growing gallium-doped silicon single crystal by Czochralski method | |
| CN102181925A (en) | Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method | |
| CN106435714A (en) | Polycrystalline silicon solution liquid level distance positioning method | |
| CN208976814U (en) | Aluminium alloy smelting, heat preservation, casting all-in-one oven | |
| CN204058658U (en) | A kind of measuring apparatus for general ingot furnace seed crystal fusing height | |
| CN206052206U (en) | A kind of sapphire single-crystal furnace | |
| CN104233473B (en) | Measurement apparatus and measuring method for general ingot furnace seed crystal fusing height | |
| CN208419812U (en) | Length-measuring appliance is used in a kind of production of silicon single crystal rod | |
| CN101774583A (en) | Crucible device for polycrystalline silicon growth process | |
| CN103397378A (en) | Preparation method of polycrystalline silicon ingot | |
| CN100552096C (en) | A kind of improved BaY that is applicable to 2F 8The temperature gradient method of single crystal growth and device thereof | |
| CN203923449U (en) | A kind of low-energy consumption single-crystal stove | |
| CN207877928U (en) | A kind of crystal height measuring device of polycrystalline silicon ingot or purifying furnace | |
| CN205175504U (en) | Measurement device for seed crystal height in liquid silicon of high temperature in polycrystalline silicon ingot furnace | |
| CN214060708U (en) | Czochralski single crystal thermal field | |
| CN205893456U (en) | Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system | |
| CN203639604U (en) | Flexible shaft lifting type single crystal furnace | |
| CN207811928U (en) | The single crystal growing furnace of heat shielding component is set | |
| CN209276672U (en) | A kind of vertical pulling heavy Sb-admixed silicon monocrystal antimony source purifying plant | |
| CN109097822A (en) | A kind of carbon content method reduced in monocrystalline crystal bar | |
| CN207793470U (en) | The single crystal growing furnace of applicating energy-saving type thermal field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160824 Termination date: 20170930 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |