CN105102668B - 蒸镀掩模、蒸镀掩模准备体、蒸镀掩模的制造方法、及有机半导体元件的制造方法 - Google Patents

蒸镀掩模、蒸镀掩模准备体、蒸镀掩模的制造方法、及有机半导体元件的制造方法 Download PDF

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Publication number
CN105102668B
CN105102668B CN201480017634.6A CN201480017634A CN105102668B CN 105102668 B CN105102668 B CN 105102668B CN 201480017634 A CN201480017634 A CN 201480017634A CN 105102668 B CN105102668 B CN 105102668B
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mask
metal
metal mask
thickness
vapor deposition
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CN105102668A (zh
Inventor
小幡胜也
武田利彦
川崎博司
西村佑行
真木淳
落合洋光
广部吉纪
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Priority to CN201910052563.8A priority Critical patent/CN109913802B/zh
Priority to CN201811201328.4A priority patent/CN109554663B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201480017634.6A 2013-03-26 2014-03-24 蒸镀掩模、蒸镀掩模准备体、蒸镀掩模的制造方法、及有机半导体元件的制造方法 Active CN105102668B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910052563.8A CN109913802B (zh) 2013-03-26 2014-03-24 蒸镀掩模、带框架的蒸镀掩模、及它们的制造方法
CN201811201328.4A CN109554663B (zh) 2013-03-26 2014-03-24 蒸镀掩模、带框架的蒸镀掩模、及它们的制造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013063295 2013-03-26
JP2013-063295 2013-03-26
JP2014-059432 2014-03-24
PCT/JP2014/058045 WO2014157068A1 (ja) 2013-03-26 2014-03-24 蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、及び有機半導体素子の製造方法
JP2014059432A JP5812139B2 (ja) 2013-03-26 2014-03-24 蒸着マスク、蒸着マスク準備体、蒸着マスクの製造方法、及び有機半導体素子の製造方法

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CN201910052563.8A Division CN109913802B (zh) 2013-03-26 2014-03-24 蒸镀掩模、带框架的蒸镀掩模、及它们的制造方法
CN201811201328.4A Division CN109554663B (zh) 2013-03-26 2014-03-24 蒸镀掩模、带框架的蒸镀掩模、及它们的制造方法

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CN105102668A CN105102668A (zh) 2015-11-25
CN105102668B true CN105102668B (zh) 2019-02-19

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US (4) US10597766B2 (2)
JP (1) JP5812139B2 (2)
KR (4) KR101934244B1 (2)
CN (1) CN105102668B (2)
TW (4) TWI665320B (2)
WO (1) WO2014157068A1 (2)

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