CN106029217A - 等离子体前级热反应器系统 - Google Patents
等离子体前级热反应器系统 Download PDFInfo
- Publication number
- CN106029217A CN106029217A CN201580009058.5A CN201580009058A CN106029217A CN 106029217 A CN106029217 A CN 106029217A CN 201580009058 A CN201580009058 A CN 201580009058A CN 106029217 A CN106029217 A CN 106029217A
- Authority
- CN
- China
- Prior art keywords
- plasma reactor
- plasma
- subsystem
- prime
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012423 maintenance Methods 0.000 claims abstract description 24
- 238000001816 cooling Methods 0.000 claims description 20
- 230000008676 import Effects 0.000 claims 5
- 238000007599 discharging Methods 0.000 claims 1
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 149
- 238000000034 method Methods 0.000 abstract description 52
- 239000002245 particle Substances 0.000 abstract description 21
- 238000010926 purge Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461949217P | 2014-03-06 | 2014-03-06 | |
| US61/949,217 | 2014-03-06 | ||
| PCT/US2015/015048 WO2015134156A1 (en) | 2014-03-06 | 2015-02-09 | Plasma foreline thermal reactor system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106029217A true CN106029217A (zh) | 2016-10-12 |
Family
ID=54016800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580009058.5A Pending CN106029217A (zh) | 2014-03-06 | 2015-02-09 | 等离子体前级热反应器系统 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150252473A1 (2) |
| JP (1) | JP2017510453A (2) |
| KR (1) | KR102351585B1 (2) |
| CN (1) | CN106029217A (2) |
| TW (1) | TWI692542B (2) |
| WO (1) | WO2015134156A1 (2) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114025863A (zh) * | 2019-06-25 | 2022-02-08 | 应用材料公司 | 真空前级管道中用于颗粒收集的高效率捕捉器 |
| CN116670323A (zh) * | 2020-12-01 | 2023-08-29 | 应用材料公司 | 用于减少节流阀漂移的主动冷却式前级管道陷阱 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| US10337105B2 (en) | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
| US10535506B2 (en) | 2016-01-13 | 2020-01-14 | Mks Instruments, Inc. | Method and apparatus for deposition cleaning in a pumping line |
| WO2017131404A1 (ko) * | 2016-01-26 | 2017-08-03 | 주성엔지니어링(주) | 기판처리장치 |
| KR102567720B1 (ko) * | 2016-01-26 | 2023-08-17 | 주성엔지니어링(주) | 기판 처리 장치 |
| SG11201807177VA (en) | 2016-04-13 | 2018-10-30 | Applied Materials Inc | Apparatus for exhaust cooling |
| JP6698871B2 (ja) * | 2016-04-15 | 2020-05-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 酸素プラズマ洗浄サイクルの使用によるプラズマ軽減固形物回避 |
| CN109563617B (zh) * | 2016-08-26 | 2021-06-08 | 应用材料公司 | 低压升降杆腔硬件 |
| JP6606670B2 (ja) * | 2017-01-30 | 2019-11-20 | パナソニックＩｐマネジメント株式会社 | フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法 |
| US10695713B2 (en) | 2017-01-30 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Flux recovery device, and reflow apparatus and gas exchange method using the same |
| US20180226234A1 (en) | 2017-02-09 | 2018-08-09 | Applied Materials, Inc. | Plasma abatement technology utilizing water vapor and oxygen reagent |
| JP6918146B2 (ja) | 2017-05-19 | 2021-08-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 液体および固体の排出物を収集して後に反応させて気体の排出物にする装置 |
| GB2564399A (en) * | 2017-07-06 | 2019-01-16 | Edwards Ltd | Improvements in or relating to pumping line arrangements |
| WO2019120358A1 (de) * | 2017-12-21 | 2019-06-27 | centrotherm international AG | Verfahren zum betrieb einer abscheideanlage |
| US10889891B2 (en) * | 2018-05-04 | 2021-01-12 | Applied Materials, Inc. | Apparatus for gaseous byproduct abatement and foreline cleaning |
| US11221182B2 (en) | 2018-07-31 | 2022-01-11 | Applied Materials, Inc. | Apparatus with multistaged cooling |
| US11306971B2 (en) | 2018-12-13 | 2022-04-19 | Applied Materials, Inc. | Heat exchanger with multistaged cooling |
| TWI783382B (zh) * | 2020-03-18 | 2022-11-11 | 日商國際電氣股份有限公司 | 基板處理裝置，排氣裝置及半導體裝置的製造方法 |
| KR102300561B1 (ko) * | 2020-07-31 | 2021-09-13 | 삼성전자주식회사 | 증착 시스템 및 공정 시스템 |
| US11745229B2 (en) | 2020-08-11 | 2023-09-05 | Mks Instruments, Inc. | Endpoint detection of deposition cleaning in a pumping line and a processing chamber |
| US11664197B2 (en) | 2021-08-02 | 2023-05-30 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20230083516A (ko) * | 2021-12-03 | 2023-06-12 | 삼성전자주식회사 | 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법 |
| KR102490651B1 (ko) * | 2022-08-18 | 2023-01-20 | 주식회사 미래보 | 반도체 공정 시 발생하는 반응부산물 포집 장치의 신속 교체를 통한 공정 정지 로스 감축 시스템 |
| US12159765B2 (en) | 2022-09-02 | 2024-12-03 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20240115465A (ko) | 2023-01-19 | 2024-07-26 | 삼성전자주식회사 | 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치 |
| US12455119B2 (en) | 2023-04-10 | 2025-10-28 | Applied Materials, Inc. | Regenerator for foreline heating |
| KR102814486B1 (ko) * | 2024-01-24 | 2025-05-29 | 주식회사 에이치피에스피 | 고압 기판 처리 장치 및 그에 사용되는 콜드 트랩 |
| WO2025250609A1 (en) * | 2024-05-30 | 2025-12-04 | Lam Research Corporation | Coating surfaces within a pumping path of a processing tool |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6156667A (en) * | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| CN102317686A (zh) * | 2009-02-11 | 2012-01-11 | 爱德华兹有限公司 | 处理废气流的方法 |
| CN102640255A (zh) * | 2009-12-03 | 2012-08-15 | 应用材料公司 | 用于对处理系统中的排放气体进行处理的方法和设备 |
| CN203002192U (zh) * | 2012-12-28 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种过氧化氢等离子体灭菌器的废气分解装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3171593B2 (ja) * | 1990-10-09 | 2001-05-28 | 東京エレクトロン株式会社 | トラップ装置 |
| JP2996524B2 (ja) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | ポリイミド硬化装置 |
| JPH05195952A (ja) | 1992-01-17 | 1993-08-06 | Matsushita Electric Ind Co Ltd | クライオパネル装置 |
| JPH115012A (ja) * | 1997-06-16 | 1999-01-12 | Kenji Inoue | 排ガス処理方法および処理装置 |
| JP2000026971A (ja) * | 1998-07-10 | 2000-01-25 | Kokusai Electric Co Ltd | Ｃｖｄ装置の排ガス処理装置 |
| JP2000262841A (ja) * | 1999-03-18 | 2000-09-26 | Kokusai Electric Co Ltd | トラップ装置及び半導体製造装置 |
| US6291938B1 (en) | 1999-12-31 | 2001-09-18 | Litmas, Inc. | Methods and apparatus for igniting and sustaining inductively coupled plasma |
| JP4549563B2 (ja) * | 2001-03-22 | 2010-09-22 | 三菱電機株式会社 | ハロゲン含有ガスの処理装置 |
| US7060234B2 (en) * | 2001-07-18 | 2006-06-13 | Applied Materials | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| JP2005142377A (ja) * | 2003-11-07 | 2005-06-02 | Mitsubishi Heavy Ind Ltd | クリーニングガスのリサイクルシステム |
| US20060090773A1 (en) | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| GB0505674D0 (en) * | 2005-03-22 | 2005-04-27 | Boc Group Plc | Trap device |
| US20090175771A1 (en) * | 2006-03-16 | 2009-07-09 | Applied Materials, Inc. | Abatement of effluent gas |
| KR101041026B1 (ko) * | 2008-09-01 | 2011-06-13 | 한국에너지기술연구원 | 공동형 플라즈마 토치, 플라즈마/가스 혼합형 연소장치 및이를 이용한 용융방법 |
| US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
-
2015
- 2015-02-09 WO PCT/US2015/015048 patent/WO2015134156A1/en not_active Ceased
- 2015-02-09 KR KR1020167027155A patent/KR102351585B1/ko active Active
- 2015-02-09 CN CN201580009058.5A patent/CN106029217A/zh active Pending
- 2015-02-09 JP JP2016573647A patent/JP2017510453A/ja active Pending
- 2015-02-24 US US14/630,631 patent/US20150252473A1/en not_active Abandoned
- 2015-03-06 TW TW104107225A patent/TWI692542B/zh active
-
2019
- 2019-03-28 US US16/368,170 patent/US10920315B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6156667A (en) * | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| CN102317686A (zh) * | 2009-02-11 | 2012-01-11 | 爱德华兹有限公司 | 处理废气流的方法 |
| CN102640255A (zh) * | 2009-12-03 | 2012-08-15 | 应用材料公司 | 用于对处理系统中的排放气体进行处理的方法和设备 |
| CN203002192U (zh) * | 2012-12-28 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种过氧化氢等离子体灭菌器的废气分解装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114025863A (zh) * | 2019-06-25 | 2022-02-08 | 应用材料公司 | 真空前级管道中用于颗粒收集的高效率捕捉器 |
| CN116670323A (zh) * | 2020-12-01 | 2023-08-29 | 应用材料公司 | 用于减少节流阀漂移的主动冷却式前级管道陷阱 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015134156A1 (en) | 2015-09-11 |
| JP2017510453A (ja) | 2017-04-13 |
| TW201600623A (zh) | 2016-01-01 |
| US10920315B2 (en) | 2021-02-16 |
| KR102351585B1 (ko) | 2022-01-13 |
| US20190226083A1 (en) | 2019-07-25 |
| US20150252473A1 (en) | 2015-09-10 |
| TWI692542B (zh) | 2020-05-01 |
| KR20160130261A (ko) | 2016-11-10 |
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