CN106663624B - 用于tsv/mems/功率器件蚀刻的化学物质 - Google Patents

用于tsv/mems/功率器件蚀刻的化学物质 Download PDF

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Publication number
CN106663624B
CN106663624B CN201580031726.4A CN201580031726A CN106663624B CN 106663624 B CN106663624 B CN 106663624B CN 201580031726 A CN201580031726 A CN 201580031726A CN 106663624 B CN106663624 B CN 106663624B
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etching
hydrogen
fluid
silicon
polymer deposition
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Chinese (zh)
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CN106663624A (zh
Inventor
沈鹏
克里斯汀·杜斯拉特
柯蒂斯·安德森
拉胡尔·古普塔
文森特·M·欧马杰
南森·斯塔福德
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN201580031726.4A 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质 Active CN106663624B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010698443.8A CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

Related Child Applications (1)

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CN202010698443.8A Division CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

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CN106663624A CN106663624A (zh) 2017-05-10
CN106663624B true CN106663624B (zh) 2020-08-14

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US (3) US9892932B2 (2)
EP (1) EP3158579A4 (2)
JP (1) JP6485972B2 (2)
KR (3) KR102539241B1 (2)
CN (2) CN106663624B (2)
SG (1) SG11201610342YA (2)
TW (3) TWI658509B (2)
WO (1) WO2015194178A1 (2)

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CN112786441B (zh) 2019-11-08 2026-01-23 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
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KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
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KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
KR20230079304A (ko) * 2020-10-05 2023-06-07 에스피피 테크놀로지스 컴퍼니 리미티드 플라스마 처리용 가스, 플라스마 처리 방법 및 플라스마 처리 장치
KR102924126B1 (ko) * 2020-10-15 2026-02-06 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
KR102924118B1 (ko) * 2020-10-15 2026-02-09 가부시끼가이샤 레조낙 플루오로부텐의 보관 방법
CN116325088A (zh) * 2020-10-15 2023-06-23 株式会社力森诺科 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法
JPWO2022080275A1 (2) * 2020-10-15 2022-04-21
CN116472258A (zh) * 2020-10-15 2023-07-21 株式会社力森诺科 氟-2-丁烯的保存方法
WO2022210043A1 (ja) * 2021-03-30 2022-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7700221B2 (ja) * 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2022234643A1 (ja) 2021-05-07 2022-11-10 東京エレクトロン株式会社 エッチング方法及びエッチング装置
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
TW202548079A (zh) 2024-03-01 2025-12-16 日商大金工業股份有限公司 沉積氣體
WO2025258395A1 (ja) * 2024-06-11 2025-12-18 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
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SG11201610342YA (en) 2017-01-27
CN106663624A (zh) 2017-05-10
EP3158579A1 (en) 2017-04-26
KR102539241B1 (ko) 2023-06-01
KR102679289B1 (ko) 2024-06-27
TWI695423B (zh) 2020-06-01
JP6485972B2 (ja) 2019-03-20
KR102444697B1 (ko) 2022-09-16
US10720335B2 (en) 2020-07-21
TW201606867A (zh) 2016-02-16
KR20170020434A (ko) 2017-02-22
US20180366336A1 (en) 2018-12-20
CN111816559B (zh) 2024-06-11
KR20220124825A (ko) 2022-09-14
US20180076046A1 (en) 2018-03-15
TW202030312A (zh) 2020-08-16
CN111816559A (zh) 2020-10-23
EP3158579A4 (en) 2018-02-21
US20170103901A1 (en) 2017-04-13
TW201929071A (zh) 2019-07-16
US9892932B2 (en) 2018-02-13
JP2017518645A (ja) 2017-07-06
WO2015194178A1 (en) 2015-12-23
KR20230079491A (ko) 2023-06-07
TWI733431B (zh) 2021-07-11
TWI658509B (zh) 2019-05-01
US10103031B2 (en) 2018-10-16

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