CN106830708A - Half-reflection and half-transmission glass with electro-magnetic screen function - Google Patents

Half-reflection and half-transmission glass with electro-magnetic screen function Download PDF

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CN106830708A
CN106830708A CN201710174404.6A CN201710174404A CN106830708A CN 106830708 A CN106830708 A CN 106830708A CN 201710174404 A CN201710174404 A CN 201710174404A CN 106830708 A CN106830708 A CN 106830708A
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refractive index
layer
high refractive
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substrate
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马志锋
孙官恩
张莉
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YICHANG NANBO DISPLAY DEVICES Co Ltd
CSG Holding Co Ltd
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YICHANG NANBO DISPLAY DEVICES Co Ltd
CSG Holding Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/154Deposition methods from the vapour phase by sputtering
    • C03C2218/156Deposition methods from the vapour phase by sputtering by magnetron sputtering

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Abstract

本发明公开了一种具有电磁屏蔽功能的半反半透玻璃,包括玻璃基板,玻璃基板上由内至外设有多层介质膜,介质膜采用高折射率层和低折射率层进行交叉设置;其中最内层和最外层介质膜为高折射率层;除最外层介质膜的其它高折射率层中,其中某一层高折射率层采用高折射率透明导电材料制成,具体材质为氧化铟锡、氧化锌铝或掺氟氧化锡,折射率为1.8~2.5。该玻璃集成了电磁屏蔽和半反半透功能,一方面减少了生产工序,降低了生产成本,另一方面置于内层的透明导电材料将得到更好的保护,具有可靠性更高的电磁屏蔽功能。The invention discloses a semi-reflective and semi-transparent glass with electromagnetic shielding function, which comprises a glass substrate, on which a multi-layer dielectric film is arranged from inside to outside, and the dielectric film adopts a high refractive index layer and a low refractive index layer to intersect. ; wherein the innermost and outermost dielectric films are high-refractive-index layers; among the other high-refractive-index layers except the outermost dielectric film, one of the high-refractive-index layers is made of a high-refractive-index transparent conductive material, specifically The material is indium tin oxide, zinc aluminum oxide or fluorine-doped tin oxide, and the refractive index is 1.8~2.5. The glass integrates electromagnetic shielding and transflective functions. On the one hand, it reduces the production process and production cost. On the other hand, the transparent conductive material placed in the inner layer will be better protected and has a more reliable electromagnetic shielding function.

Description

具有电磁屏蔽功能的半反半透玻璃Transflective and translucent glass with electromagnetic shielding function

技术领域technical field

本发明涉及透明导电玻璃领域,具体为一种具有电磁屏蔽功能的半反半透玻璃。The invention relates to the field of transparent conductive glass, in particular to a semi-reflective and semi-transparent glass with electromagnetic shielding function.

背景技术Background technique

但随着电子技术的高速发展,电子设备的密集程度越来越大,电磁干扰情况也越来越突出。为确保电子设置在工作时不会受到外界电磁场的干扰,同时不对该环境中其他设备造成不允许的电磁干扰,电磁屏蔽膜及其设计也变得尤为重要。However, with the rapid development of electronic technology, the density of electronic equipment is increasing, and the electromagnetic interference is becoming more and more prominent. In order to ensure that the electronic device will not be disturbed by the external electromagnetic field when it is working, and at the same time not cause unacceptable electromagnetic interference to other equipment in the environment, the electromagnetic shielding film and its design have become particularly important.

半反半透显示在车载后视镜、智能家居等方面的应用越来越广泛。当前的半反半透显示主要是通过在显示屏外设置具有半反半透光学特性的玻璃来实现。半反半透的光学特性主要利用光的干涉原理,通过设置多层特定厚度的高、低折射率的膜系来实现。而对于电磁屏蔽的处理,往往通过设置单独的导电膜层来实现,例如直接在显示模组上沉积透明导电层ITO等。这种产品结构复杂,一方面增加新的工序和成本,另一方面导电材料往往不能得到有效保护,导致屏蔽效果衰减严重。Transflective and transflective displays are more and more widely used in vehicle rearview mirrors, smart homes, etc. The current transflective display is mainly realized by arranging glass with transflective optical properties outside the display screen. The optical properties of semi-reflective and semi-transparent mainly utilize the interference principle of light, and are realized by setting multiple layers of high- and low-refractive-index film systems with specific thicknesses. For the treatment of electromagnetic shielding, it is often realized by setting a separate conductive film layer, such as directly depositing a transparent conductive layer ITO on the display module. The structure of this kind of product is complex, on the one hand, new processes and costs are added, on the other hand, conductive materials are often not effectively protected, resulting in serious attenuation of the shielding effect.

发明内容Contents of the invention

本发明所要解决的技术问题是提供一种具有电磁屏蔽功能的半反半透玻璃,将透明导电材料置于内层,能够减少了生产工序,降低了生产成本,提高电磁屏蔽的可靠性。The technical problem to be solved by the present invention is to provide a semi-reflective and semi-transparent glass with electromagnetic shielding function. The transparent conductive material is placed in the inner layer, which can reduce the production process, reduce the production cost, and improve the reliability of electromagnetic shielding.

为解决上述技术问题,本发明所采用的技术方案是:一种具有电磁屏蔽功能的半反半透玻璃,包括玻璃基板,玻璃基板上由内至外设有多层介质膜,介质膜采用高折射率层和低折射率层进行交叉设置;其中最内层和最外层介质膜为高折射率层;除最外层介质膜的其它高折射率层中,其中某一层高折射率层采用高折射率透明导电材料制成,具体材质为氧化铟锡、氧化锌铝或掺氟氧化锡,折射率为1.8~2.5。In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a kind of semi-reflective and semi-transparent glass with electromagnetic shielding function, including a glass substrate, and a multi-layer dielectric film is arranged on the glass substrate from the inside to the outside, and the dielectric film adopts high The refractive index layer and the low refractive index layer are arranged crosswise; the innermost and outermost dielectric films are high refractive index layers; among the other high refractive index layers except the outermost dielectric film, one of the high refractive index layers Made of transparent conductive material with high refractive index, the specific material is indium tin oxide, zinc aluminum oxide or fluorine-doped tin oxide, and the refractive index is 1.8-2.5.

所述最外层介质膜的高折射率层和其它非高折射率透明导电材料制成高折射率层的材质为TiO2、Nb2O5、Si3N4、Ta2O5或ZrO2,折射率为1.8~2.5,折射率为1.8~2.5。The material of the high refractive index layer of the outermost dielectric film and other non-high refractive index transparent conductive materials is TiO 2 , Nb 2 O 5 , Si 3 N 4 , Ta 2 O 5 or ZrO 2 , The refractive index is 1.8-2.5, and the refractive index is 1.8-2.5.

所述低折射率层的材质为SiO2、MgF2、SiON;折射率为1.35~1.65。The material of the low refractive index layer is SiO 2 , MgF 2 , SiON; the refractive index is 1.35˜1.65.

所述玻璃基板上由内至外设有高折射率层、低折射率层和高折射率层;位于玻璃基板与低折射率层之间的高折射率层采用高折射率透明导电材料制成。The glass substrate is provided with a high-refractive index layer, a low-refractive-index layer and a high-refractive-index layer from the inside to the outside; the high-refractive-index layer located between the glass substrate and the low-refractive-index layer is made of a high-refractive-index transparent conductive material .

进一步地,所述采用高折射率透明导电材料制成的高折射率层的厚度为50-80nm,另外的高折射率层的厚度为40-70nm,低折射率层的厚度为50-80nm。Further, the thickness of the high refractive index layer made of high refractive index transparent conductive material is 50-80nm, the thickness of the other high refractive index layer is 40-70nm, and the thickness of the low refractive index layer is 50-80nm.

对于3层具有电磁屏蔽功能的半反半透结构表示为:基板/H1/L/H,其中H代表高折射率材料,TiO2、Nb2O5、Si3N4、Ta2O5或ZrO2,折射率为1.8~2.5,对应膜厚范围40-70nm;L代表低折射率材料,所述低折射率层的材质为SiO2、MgF2、SiON;折射率为1.35~1.65,对应膜厚为50-80nm;H1为高折射率的透明导电氧化物,具体材质为氧化铟锡、氧化锌铝或掺氟氧化锡,折射率为1.8~2.5,膜厚为50-80nm,方块电阻为40-25欧。For the transflective and semi-transparent structure with three layers of electromagnetic shielding function, it is expressed as: substrate/H1/L/H, where H represents high refractive index materials, TiO 2 , Nb 2 O 5 , Si 3 N 4 , Ta 2 O 5 or ZrO 2 , the refractive index is 1.8-2.5, corresponding to the film thickness range of 40-70nm; L represents the low refractive index material, and the material of the low refractive index layer is SiO 2 , MgF 2 , SiON; the refractive index is 1.35-1.65, corresponding to The film thickness is 50-80nm; H1 is a transparent conductive oxide with high refractive index. For 40-25 euros.

所述玻璃基板上由内至外设有高折射率层、低折射率层、高折射率层、低折射率层和高折射率层;除最外层高折射率层以外的其它高折射率层中,某一高折射率层采用高折射率透明导电材料制成。The glass substrate is provided with a high-refractive index layer, a low-refractive-index layer, a high-refractive-index layer, a low-refractive-index layer and a high-refractive-index layer from inside to outside; Among the layers, a certain high-refractive-index layer is made of a high-refractive-index transparent conductive material.

进一步地,所述采用高折射率透明导电材料制成的高折射率层的厚度为20-120nm,其他的高折射率层中,靠近基板的高折射率层的厚度为25-45nm,远离基板的高折射率层的厚度为50-70nm,贴近基板的低折射率层的厚度为0-20nm,远离基板的低折射率层的厚度为80-120nm。Further, the thickness of the high refractive index layer made of high refractive index transparent conductive material is 20-120nm, among other high refractive index layers, the thickness of the high refractive index layer close to the substrate is 25-45nm, and the thickness of the high refractive index layer away from the substrate is 20-120nm. The thickness of the high refractive index layer is 50-70nm, the thickness of the low refractive index layer close to the substrate is 0-20nm, and the thickness of the low refractive index layer far away from the substrate is 80-120nm.

对于5具有电磁屏蔽功能的半反半透结构表示为:基板/H1/L/H/L/H或基板/H/L/H1/L/H,其中H代表高折射率材料,TiO2、Nb2O5、Si3N4、Ta2O5或ZrO2,折射率为1.8~2.5,贴近基板的H层膜厚范围25-45nm,远离基板的H层膜厚范围为50-70nm;L代表低折射率材料,所述低折射率层的材质为SiO2、MgF2、SiON;折射率为1.35~1.65,贴近基板的L层膜厚范围0-20nm,远离基板的L层膜厚范围为80-120nm;H1为高折射率的透明导电氧化物,具体材质为氧化铟锡、氧化锌铝或掺氟氧化锡,折射率为1.8~2.5,膜厚为20-120nm,方块电阻为100-12欧。For 5, the semi-reflective and semi-transparent structure with electromagnetic shielding function is expressed as: substrate/H1/L/H/L/H or substrate/H/L/H1/L/H, where H represents high refractive index materials, TiO 2 , Nb 2 O 5 , Si 3 N 4 , Ta 2 O 5 or ZrO 2 , the refractive index is 1.8-2.5, the thickness of the H layer close to the substrate is in the range of 25-45nm, and the thickness of the H layer far away from the substrate is in the range of 50-70nm; L stands for low refractive index material, the material of the low refractive index layer is SiO 2 , MgF 2 , SiON; the refractive index is 1.35-1.65, the film thickness of the L layer close to the substrate is in the range of 0-20nm, and the film thickness of the L layer far away from the substrate The range is 80-120nm; H1 is a transparent conductive oxide with high refractive index, the specific material is indium tin oxide, zinc aluminum oxide or fluorine-doped tin oxide, the refractive index is 1.8-2.5, the film thickness is 20-120nm, and the sheet resistance is 100-12 Euros.

传统生产方案中,半反半透镜和屏蔽功能层属于两个范畴,往往采用两种工序来分别实现。半反半透镜产品采用高低折射率的绝缘介质膜层堆叠来实现;针对屏蔽层,往往采用涂布导电涂层,或者真空沉积导电金属来实现。本发明将透明导电材料作为半反半透镜膜系中的一层,从而将半反反透光学和屏蔽性能进行集成,同时透明导电材料作为低层膜不容易受到损伤和腐蚀,具有优良的信赖性。In the traditional production scheme, the semi-reflective mirror and the shielding functional layer belong to two categories, and are often realized separately by two processes. Semi-reflective half-lens products are realized by stacking high and low refractive index insulating dielectric films; for shielding layers, they are often realized by coating conductive coatings or vacuum-depositing conductive metals. In the present invention, the transparent conductive material is used as a layer in the semi-reflective and semi-lens film system, so as to integrate the semi-reflective optical and shielding performance, and at the same time, the transparent conductive material is not easy to be damaged and corroded as a low-layer film, and has excellent reliability .

本发明具有以下有益效果:The present invention has the following beneficial effects:

本发明将透明导电膜膜层作为半反半透膜系中的一层高折射率膜层,集成了电磁屏蔽和半反半透功能,一方面减少了生产工序,降低了生产成本,另一方面置于内层的透明导电材料将得到更好的保护,透明导电材料作为低层膜不容易受到损伤和腐蚀,具有优良的信赖性,具有可靠性更高的电磁屏蔽功能,并可实现半反半透的光学效果。In the present invention, the transparent conductive film layer is used as a layer of high refractive index film layer in the semi-reflective and semi-transparent film system, which integrates the electromagnetic shielding and semi-reflective and semi-transparent functions. On the one hand, the production process is reduced, and the production cost is reduced. On the one hand, the transparent conductive material placed in the inner layer will be better protected. As a low-layer film, the transparent conductive material is not easy to be damaged and corroded, has excellent reliability, has a more reliable electromagnetic shielding function, and can realize semi-reflective Translucent optical effect.

具体实施方式detailed description

下面结合实施例,进一步阐明本发明。这些实施例应理解为仅用于说明本发明而不是用于限制本发明的保护范围。在阅读了本发明记载的内容之后,本领域技术人员可以对本发明作各种改动或修改,这些等效变化和修饰同样落入本发明权利要求书所限定的范围。Below in conjunction with embodiment, further illustrate the present invention. These examples should be understood as only for illustrating the present invention but not for limiting the protection scope of the present invention. After reading the contents of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent changes and modifications also fall within the scope defined by the claims of the present invention.

以下的实例和对比例中,H层代表高折射率材料,具体为Nb2O5,折射率为2.5,L为低折射率材料,具体为SiO2,折射率为1.46,H1层为ITO,折射率为2.1。Nb2O5、SiO2、ITO均采用真空磁控溅射法制备,本底真空为3*10-4Pa,基板温度为330℃。Nb2O5层的沉积采用NbOx靶(X=1.5),工艺气体为200sccm氩气,氧气为80sccm;SiO2层的沉积采用纯硅靶,工艺气体为200sccm氩气,氧气为50sccm;ITO层的沉积采用ITO靶,工艺气体为200sccm氩气,氧气为2sccm。In the following examples and comparative examples, the H layer represents a high refractive index material, specifically Nb 2 O 5 , with a refractive index of 2.5, L is a low refractive index material, specifically SiO 2 , with a refractive index of 1.46, and the H1 layer is ITO. The refractive index is 2.1. Nb 2 O 5 , SiO 2 , and ITO were all prepared by vacuum magnetron sputtering, the background vacuum was 3*10 -4 Pa, and the substrate temperature was 330°C. The deposition of Nb 2 O 5 layer adopts NbOx target (X=1.5), the process gas is 200 sccm argon, and the oxygen is 80 sccm; the deposition of SiO 2 layer adopts pure silicon target, the process gas is 200 sccm argon, and the oxygen is 50 sccm; The ITO target was used for the deposition, the process gas was 200 sccm argon, and the oxygen was 2 sccm.

对比例1:三层普通膜系半反半透结构为:基板/H/L/H,其中H代表高折射率材料,基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,底层H层的膜厚为50nm,顶层H层的膜厚为50nm;L代表低折射率材料,选取SiO2,折射率1.46,膜厚为60nm。从基板空气面(非膜层面)测试反射率为45%,反射为蓝绿色,均匀色度空间(L,a,b)中L=72,a=-10,b=-22。Comparative example 1: The semi-reflective and semi-transparent structure of the three-layer common film system is: substrate/H/L/H, where H represents a high refractive index material, the substrate is a transparent substrate glass, and the H layer is Nb 2 O 5 , with a refractive index of 2.5 , the film thickness of the bottom H layer is 50nm, and the film thickness of the top H layer is 50nm; L represents a low refractive index material, choose SiO 2 , the refractive index is 1.46, and the film thickness is 60nm. The reflectance measured from the air surface (non-film layer) of the substrate is 45%, and the reflection is blue-green. In the uniform chromaticity space (L, a, b), L=72, a=-10, b=-22.

对比例2:三层普通膜系半反半透结构为:基板/H/L/H1,其中基板为透明基板玻璃,H代表高折射率材料,H层为Nb2O5,折射率为2.5,膜厚为50nm;L代表低折射率材料,选取SiO2,折射率1.46,膜厚为78nm。H1层为ITO,折射率为2.1,膜厚为60nm,方块电阻为30欧。从基板空气面(非膜层面)测试反射率为40%,反射为蓝绿色,均匀色度空间(L,a,b)中L=70,a=-10,b=-22。Comparative example 2: The semi-reflective and semi-transparent structure of the three-layer common film system is: substrate/H/L/H1, where the substrate is a transparent substrate glass, H represents a high refractive index material, and the H layer is Nb 2 O 5 with a refractive index of 2.5 , the film thickness is 50nm; L represents a low-refractive index material, SiO 2 is selected, the refractive index is 1.46, and the film thickness is 78nm. The H1 layer is ITO with a refractive index of 2.1, a film thickness of 60nm, and a sheet resistance of 30Ω. The reflectance measured from the air surface (non-film layer) of the substrate is 40%, and the reflection is blue-green. In the uniform chromaticity space (L, a, b), L=70, a=-10, b=-22.

对比例3:三层普通膜系半反半透结构为:H1/基板/H/L/H,其中H代表高折射率材料,本实例中选取基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,底层H层的膜厚为50nm,顶层H层的膜厚为50nm;L代表低折射率材料,本实例中选取SiO2,折射率1.46,膜厚为60nm。H1层为ITO,折射率为2.1,膜厚为60nm,方块电阻为30欧。从基板空气面(非膜层面)测试反射率为48%,反射为蓝绿色,均匀色度空间(L,a,b)中L=73,a=-10,b=-22。Comparative Example 3: The semi-reflective and semi-transparent structure of the three-layer common film system is: H1/substrate/H/L/H, where H represents a high refractive index material. In this example, the substrate is selected as a transparent substrate glass, and the H layer is Nb 2 O 5 , the refractive index is 2.5, the film thickness of the bottom H layer is 50nm, and the film thickness of the top H layer is 50nm; L represents a low refractive index material. In this example, SiO 2 is selected with a refractive index of 1.46 and a film thickness of 60nm. The H1 layer is ITO with a refractive index of 2.1, a film thickness of 60nm, and a sheet resistance of 30Ω. The reflectance measured from the air surface (non-film layer) of the substrate is 48%, and the reflection is blue-green. In the uniform chromaticity space (L, a, b), L=73, a=-10, b=-22.

实施例1:三层普通膜系半反半透结构为:基板/H1/L/H,其中H代表高折射率材料,本实例中选取基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,顶层H层的膜厚为50nm;L代表低折射率材料,本实例中选取SiO2,折射率1.46,膜厚为80nm。H1层为ITO,折射率为2.1,膜厚为60nm,方块电阻为30欧。从基板空气面(非膜层面)测试反射率为50%,反射为蓝绿色,均匀色度空间(L,a,b)中L=73,a=-10,b=-22。Example 1: The semi-reflective and semi-transparent structure of the three-layer common film system is: substrate/H1/L/H, wherein H represents a high refractive index material. In this example, the substrate is selected as a transparent substrate glass, and the H layer is Nb 2 O 5 . The refractive index is 2.5, and the film thickness of the top H layer is 50nm; L represents a low refractive index material. In this example, SiO 2 is selected, with a refractive index of 1.46, and a film thickness of 80nm. The H1 layer is ITO with a refractive index of 2.1, a film thickness of 60nm, and a sheet resistance of 30Ω. The reflectance measured from the air surface (non-film layer) of the substrate is 50%, and the reflection is blue-green. In the uniform chromaticity space (L, a, b), L=73, a=-10, b=-22.

对比例1-3与实施例1相比,其屏蔽效能及反射率见下表1:Comparative example 1-3 is compared with embodiment 1, and its shielding effectiveness and reflectivity are shown in the following table 1:

表1Table 1

对比例1为常规的半反半透镜膜系,其膜层全部为绝缘介质,不具有电磁屏蔽功能。对比例2将ITO膜放在表层,对比例3将ITO层设置在基板的另外一面。对比例2和3的ITO层暴露在膜层外部,其容易受到腐蚀和破坏,无论是整个膜层的电磁屏蔽和光学反射率的耐候性也大大降低。实施例1中膜系中H1膜层为透明导电材料,且设置在膜层底部,外部有膜层波保护,其具有电磁屏蔽功能,同时具有良好的耐候性。Comparative Example 1 is a conventional semi-reflective and semi-lens film system, and its film layers are all insulating media without electromagnetic shielding function. In Comparative Example 2, the ITO film was placed on the surface layer, and in Comparative Example 3, the ITO layer was placed on the other side of the substrate. The ITO layer of Comparative Examples 2 and 3 is exposed outside the film layer, which is easily corroded and damaged, and the electromagnetic shielding and weather resistance of the entire film layer are also greatly reduced. The H1 film layer in the film system in Example 1 is a transparent conductive material, and it is arranged at the bottom of the film layer, and the film layer is protected outside, which has the function of electromagnetic shielding and good weather resistance.

对比例4:五层普通膜系半反半透结构为:基板/H/L/H/L/H,其中H代表高折射率材料,本实例中选取基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,底层H层的膜厚为15nm,中间层H层的膜厚为84nm,顶层H层的膜厚为50nm;L代表低折射率材料,本实例中选取SiO2,折射率1.46,底部L层的膜厚为22nm,上层L层的膜厚为88nm。从基板空气面(非膜层面)测试反射率为50%,反射色近乎无色,均匀色度空间(L,a,b)中L=76,a=0,b=-1。Comparative example 4: The semi-reflective and semi-transparent structure of the five-layer common film system is: substrate/H/L/H/L/H, where H represents a high refractive index material. In this example, the substrate is selected as a transparent substrate glass, and the H layer is Nb 2 O 5 , the refractive index is 2.5, the film thickness of the bottom H layer is 15nm, the film thickness of the middle layer H layer is 84nm, and the film thickness of the top H layer is 50nm; L represents a low refractive index material, and SiO 2 is selected in this example , the refractive index is 1.46, the film thickness of the bottom L layer is 22nm, and the film thickness of the upper L layer is 88nm. The reflectance measured from the air surface (non-film surface) of the substrate is 50%, the reflection color is almost colorless, and L=76, a=0, b=-1 in the uniform chromaticity space (L, a, b).

对比例5:五层普通膜系半反半透结构为:H1/基板/H/L/H/L/H,其中H代表高折射率材料,本实例中选取基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,底层H层的膜厚为15nm,中间层H层的膜厚为84nm,顶层H层的膜厚为50nm;L代表低折射率材料,本实例中选取SiO2,折射率1.46,底部L层的膜厚为22nm,上层L层的膜厚为88nm。从基板空气面(非膜层面)测试反射率为55%;基板另外一面的H1层为ITO,折射率为2.1,膜厚为95nm,方块电阻为17欧。从基板空气面(非膜层面)测试反射率为50%,反射色近乎无色,均匀色度空间(L,a,b)中L=76,a=0,b=-2。Comparative example 5: The semi-reflective and semi-transparent structure of the five-layer common film system is: H1/substrate/H/L/H/L/H, where H represents a high refractive index material. In this example, the substrate is selected as a transparent substrate glass, and the H layer is Nb 2 O 5 , the refractive index is 2.5, the film thickness of the bottom H layer is 15nm, the film thickness of the middle layer H layer is 84nm, and the film thickness of the top H layer is 50nm; L represents a low refractive index material, which is selected in this example SiO 2 has a refractive index of 1.46, the film thickness of the bottom L layer is 22 nm, and the film thickness of the upper L layer is 88 nm. The reflectance measured from the air side of the substrate (non-film layer) is 55%; the H1 layer on the other side of the substrate is ITO with a refractive index of 2.1, a film thickness of 95nm, and a sheet resistance of 17 ohms. The reflectance measured from the air surface (non-film surface) of the substrate is 50%, the reflection color is almost colorless, and L=76, a=0, b=-2 in the uniform chromaticity space (L, a, b).

实施例2:五层普通膜系半反半透结构为:基板/H1/L/H/L/H,其中H代表高折射率材料,本实例中选取基板为透明基板玻璃,H层为Nb2O5,折射率为2.5,底层H层的膜厚为33nm,顶层H层的膜厚为65nm;L代表低折射率材料,本实例中选取SiO2,折射率1.46,底部L层的膜厚为2nm,上层L层的膜厚为90nm。基板另外一面的H1层为ITO,折射率为2.1,膜厚为95nm,方块电阻为17欧。从基板空气面(非膜层面)测试反射率为48%,反射色近乎无色,均匀色度空间(L,a,b)中L=75,a=0,b=-1。Example 2: The semi-reflective and semi-transparent structure of the five-layer common film system is: substrate/H1/L/H/L/H, wherein H represents a high refractive index material. In this example, the substrate is selected as a transparent substrate glass, and the H layer is Nb 2 O 5 , the refractive index is 2.5, the film thickness of the bottom H layer is 33nm, and the film thickness of the top H layer is 65nm; L represents a low refractive index material. In this example, SiO 2 is selected, and the film thickness of the bottom L layer is 1.46. The thickness was 2 nm, and the film thickness of the upper L layer was 90 nm. The H1 layer on the other side of the substrate is ITO with a refractive index of 2.1, a film thickness of 95nm, and a sheet resistance of 17 ohms. The reflectance measured from the air surface (non-film surface) of the substrate is 48%, the reflection color is almost colorless, and L=75, a=0, b=-1 in the uniform chromaticity space (L, a, b).

对比例4-5与实施例2相比,其屏蔽效能及反射率见下表2:Comparative example 4-5 is compared with embodiment 2, and its shielding effectiveness and reflectivity are shown in the following table 2:

表2Table 2

对比例4为常规的半反半透镜膜系,其膜层全部为绝缘介质,不具有电磁屏蔽功能。对比例5将导电的ITO膜设置在基板的另外一面。对比例5的ITO层暴露在膜层外部,其容易受到腐蚀和破坏,无论是整个膜层的电磁屏蔽和光学反射率的耐候性也大大降低。实施例2中膜系中H1膜层为透明导电材料,且设置在膜层底部,外部有膜层波保护,其具有电磁屏蔽功能,同时具有良好的耐候性。Comparative Example 4 is a conventional semi-reflective and semi-lens film system, and its film layers are all insulating media without electromagnetic shielding function. In Comparative Example 5, a conductive ITO film was disposed on the other side of the substrate. The ITO layer of Comparative Example 5 is exposed outside the film layer, which is easily corroded and damaged, and the electromagnetic shielding and weather resistance of the entire film layer are also greatly reduced. The H1 film layer in the film system in Example 2 is a transparent conductive material, and it is arranged at the bottom of the film layer, and there is a film layer wave protection on the outside, which has the function of electromagnetic shielding and good weather resistance.

另外,高折射率透明导电材料制成的高折射率层还可选用氧化锌铝或掺氟氧化锡,折射率为1.8~2.5;其他高折射率材料还可选用TiO2、Si3N4、Ta2O5或ZrO2,折射率为1.8~2.5;低折射率层的还可选用MgF2或SiON;折射率为1.35~1.65。In addition, the high-refractive index layer made of high-refractive index transparent conductive materials can also be made of zinc oxide aluminum or fluorine-doped tin oxide, with a refractive index of 1.8 to 2.5; other high-refractive index materials can also be selected from TiO 2 , Si 3 N 4 , Ta 2 O 5 or ZrO 2 , the refractive index is 1.8-2.5; MgF 2 or SiON can also be used for the low-refractive index layer; the refractive index is 1.35-1.65.

Claims (7)

1. a kind of half-reflection and half-transmission glass with electro-magnetic screen function, it is characterised in that:Including glass substrate, on glass substrate by Inside to multilayer dielectric film is externally provided with, deielectric-coating is carried out arranged in a crossed manner using high refractive index layer and low-index layer;Wherein innermost layer It is high refractive index layer with outermost layer dielectric;In except other high refractive index layers of outermost layer dielectric, wherein a certain floor height is reflected Rate layer is made of high refractive index transparent conductive material, and specific material is tin indium oxide, zinc oxide aluminum or fluorine doped tin oxide, refraction Rate is 1.8 ~ 2.5.
2. glass according to claim 1, it is characterised in that:The high refractive index layer of the outermost layer dielectric is non-with other The material that high refractive index transparent conductive material is made high refractive index layer is TiO2、Nb2O5、Si3N4、Ta2O5Or ZrO2, refractive index is 1.8~2.5。
3. glass according to claim 1, it is characterised in that:The material of the low-index layer is SiO2、MgF2、SiON; Refractive index is 1.35 ~ 1.65.
4. glass according to claim 1, it is characterised in that:High index of refraction is provided with from the inside to the outside on the glass substrate Layer, low-index layer and high refractive index layer;High refractive index layer between glass substrate and low-index layer is reflected using high Rate transparent conductive material is made.
5. glass according to claim 4, it is characterised in that:The height that the use high refractive index transparent conductive material is made The thickness of index layer is 50-80nm, and the thickness of high refractive index layer in addition is 40-70nm, and the thickness of low-index layer is 50- 80nm。
6. glass according to claim 1, it is characterised in that:High index of refraction is provided with from the inside to the outside on the glass substrate Layer, low-index layer, high refractive index layer, low-index layer and high refractive index layer;Other in addition to outermost layer high refractive index layer In high refractive index layer, a certain high refractive index layer is made of high refractive index transparent conductive material.
7. glass according to claim 6, it is characterised in that:The height that the use high refractive index transparent conductive material is made The thickness of index layer is 20-120nm, is 25- near the thickness of the high refractive index layer of substrate in other high refractive index layers 45nm, the thickness away from the high refractive index layer of substrate is 50-70nm, and the thickness for pressing close to the low-index layer of substrate is 0-20nm, Thickness away from the low-index layer of substrate is 80-120nm.
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