CN106932138A - A kind of MEMS pressure sensor and preparation method thereof, electronic installation - Google Patents
A kind of MEMS pressure sensor and preparation method thereof, electronic installation Download PDFInfo
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- CN106932138A CN106932138A CN201511029874.0A CN201511029874A CN106932138A CN 106932138 A CN106932138 A CN 106932138A CN 201511029874 A CN201511029874 A CN 201511029874A CN 106932138 A CN106932138 A CN 106932138A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a kind of MEMS pressure sensor and preparation method thereof, electronic installation.Methods described includes providing substrate, and the composite bottom electrode of the first interlayer dielectric layer and the patterning on first interlayer dielectric layer is formed with the substrate, and the composite bottom electrode includes the screen layer and electrode layer that sequentially form；The sacrificial material layer of the second interlayer dielectric layer and patterning is deposited on composite bottom electrode, to cover the composite bottom electrode；Top electrodes are formed on the second interlayer dielectric layer and the sacrificial material layer, to cover second interlayer dielectric layer and the sacrificial material layer；The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, exposes the electrode layer in the composite bottom electrode in outside；In one layer of the side wall and bottom deposit of the described first opening and the top electrodes identical material layer, to form the reeded contact hole of tool.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS pressure sensor
And preparation method thereof, electronic installation.
Background technology
With continuing to develop for semiconductor technology, in motion sensor (motion sensor) class product
In the market, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming
Most main flow, state-of-the-art technology, and with the renewal of technology, the hair of this kind of transmission sensors product
Exhibition direction is the smaller size of scale, high-quality electric property and lower loss.
Wherein, MEMS pressure sensor is widely used in automotive electronics：Such as TPMS, engine machine
Oil pressure force snesor, automobile brake system air pressure probe, air intake manifold of automotive engine pressure
Sensor (TMAP), common rail for diesel engine pressure sensor；Consumer electronics：As tire gauge, sphygmomanometer,
Cupboard scale, health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, baking box, dust catcher pressure
Force snesor, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater are used
Liquid level pressure sensor；Industrial electronic：Such as digital pressure gauge, digital stream scale, industrial dispensing
Weigh.
In the prior art pressure sensor including type polar distance variable capacitance sensor, changed area electric capacity pass
Sensor and dielectric constant variable type capacitance sensor, wherein the type polar distance variable capacitance sensor includes
Fixed plate (fixed plate) and movable plate electrode (moving plate), wherein described under the effect of the pressure
Movable plate electrode (moving plate) is moved, and the distance between the fixed plate and movable plate electrode become
Change, electric capacity changes, the change of pressure is obtained by the change detection of the electric capacity.
Two main problems are faced with the development of pressure sensor：First is pressure sensor
(PS) drift；Such as pressure sensor height (Altitude) and temperature (TEMP) drift,
Temperature and pressure can all cause the PS to drift about, and second is static working current (VSK) electric current mistake
Low problem, the too low problem of electric current is possible as the too high problem of contact resistance.
Therefore, there is above-mentioned drawback in the prior art, it is necessary to existing pressure sensor structure and
Preparation method is improved, and to eliminate above mentioned problem, improves the performance and yield of device.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be in specific embodiment party
Further described in formula part.Summary of the invention is not meant to attempt to limit
Go out the key feature and essential features of technical scheme required for protection, do not mean that more and attempt really
The protection domain of fixed technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation of MEMS pressure sensor
Method, methods described includes：
Substrate is provided, the first interlayer dielectric layer is formed with the substrate and positioned at first interlayer
The composite bottom electrode of the patterning on dielectric layer, the composite bottom electrode includes the shielding for sequentially forming
Layer and electrode layer；
The sacrificial material layer of the second interlayer dielectric layer and patterning is deposited on the composite bottom electrode, with
Cover the composite bottom electrode；
Top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer, it is described to cover
Second interlayer dielectric layer and the sacrificial material layer；
The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, exposes position
Electrode layer in the composite bottom electrode in outside；
In one layer of the side wall and bottom deposit of the described first opening and the top electrodes identical material layer,
To be partially filled with first opening, the reeded contact hole of tool is formed.
Alternatively, methods described is still further comprised：
The top electrodes are patterned, is open with forming second on the top electrodes, exposed described sacrificial
Domestic animal material layer；
The sacrificial material layer is removed, with top electrodes cavity formed below；
Form coating above the top electrodes, with fill it is described second opening and the contact hole in
Groove.
Alternatively, the step of forming the composite bottom electrode includes：
Substrate is provided, cmos device is formed with the substrate, described the is deposited on the substrate
One interlayer dielectric layer, the screen layer and the electrode layer；
The screen layer and the electrode layer are patterned, to form main body and the position of the composite bottom electrode
Interconnection structure on the outside of the main body.
Alternatively, the step of depositing second interlayer dielectric layer and the sacrificial material layer for patterning is wrapped
Include：
Second interlayer dielectric layer and the sacrificial material layer are deposited, to cover the composite bottom electrode；
The sacrificial material layer is patterned, it is sacrificial described in the both sides of the composite bottom electrode main body top to remove
Domestic animal material layer.
Alternatively, the electrode layer and/or the top electrodes select SiGe.
Present invention also offers a kind of MEMS pressure sensor, it is characterised in that the MEMS pressures
Force snesor includes：
Bottom electrode, the bottom electrode includes the screen layer and electrode layer that sequentially form；
Top electrodes, positioned at the top of the bottom electrode, and the top electrodes and the bottom electrode
Between be formed with cavity；
Contact hole, electrically connects, wherein described positioned at the top of the electrode layer and with the top electrodes
The concave structure of contact hole.
Alternatively, the bottom electrode includes electrode body and the mutual link on the outside of the electrode body
Structure, wherein the contact hole is located at the top of the interconnection structure.
Alternatively, the contact hole is centrally formed fluted, its overall concave ring, the spill ring
Bottom connect the electrode layer, the two ends that the spill is changed connect the top electrodes.
Alternatively, the electrode layer, the top electrodes and/or the contact hole select SiGe.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS pressure sensor.
The present invention is in order to solve problems of the prior art, there is provided a kind of MEMS pressure sensings
The preparation method of device, wherein the sensor selects the composite bottom electrode, the composite bottom electrode to include
The screen layer and electrode layer for sequentially forming, for example its can select SiGe (500A)/cushion
(TiN:The composite bed of 250A)/AlCu9000A/TiN250A, is sensed by the composite bed with control pressure
The drift of device, wherein, when the top electrodes and the bottom electrode are interconnected, the contact hole is simultaneously
Non-full filled but be partially filled with to form the reeded contact hole of tool, and the contact hole is selected
SiGe, static working current (VSK) electric current is reduced by described improvement, further improves the MEMS
The sensitivity of pressure sensor and yield.
Brief description of the drawings
Drawings below of the invention is in this as a part of the invention for understanding the present invention.In accompanying drawing
Embodiments of the invention and its description are shown, for explaining device of the invention and principle.In accompanying drawing
In,
Fig. 1 a-1l are the structural representation of sensor described in the embodiment of the invention；
Fig. 2 is the preparation technology stream of MEMS pressure sensor described in the embodiment of the invention
Cheng Tu.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more thoroughly
Understand.It is, however, obvious to a person skilled in the art that the present invention can be without one
Or multiple these details and be carried out.In other examples, in order to avoid obscuring with the present invention,
It is not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and should not be construed as being limited to this
In propose embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will be originally
The scope of invention fully passes to those skilled in the art.In the accompanying drawings, for clarity, Ceng He areas
Size and relative size may be exaggerated.Same reference numerals represent identical element from start to finish.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or during layer, it can directly on other elements or layer, adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element or layer between two parties.Conversely, when element is claimed
It is " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other units
When part or layer, then in the absence of element or layer between two parties.Although it should be understood that term first, the can be used
2nd, the third various elements of description, part, area, floor and/or part, these elements, part, area,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish element, part,
Area, floor or part and another element, part, area, floor or part.Therefore, the present invention is not being departed from
Under teaching, the first element discussed below, part, area, floor or part be represented by the second element,
Part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ",
" ... on ", " above " etc., can describe for convenience herein and by using so as in description figure
A shown element or feature and other elements or the relation of feature.It should be understood that except shown in figure
Orientation beyond, spatial relationship term be intended to also include use and operate in device different orientation.Example
Such as, if device upset in accompanying drawing, then, it is described as " below other elements " or " its it
Under " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, example
Property term " ... below " and " ... under " may include it is upper and lower two orientation.Device can additionally take
Correspondingly explained to (being rotated by 90 ° or other orientations) and spatial description language as used herein.
The purpose of term as used herein is only that description specific embodiment and not as limit of the invention
System.When using herein, " one " of singulative, " one " and " described/should " be also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " including ",
When using in this specification, the feature, integer, step, operation, element and/or part are determined
Presence, but be not excluded for one or more other features, integer, step, operation, element, part
And/or the presence or addition of group.When using herein, term "and/or" includes any of related Listed Items
And all combinations.
In order to thoroughly understand the present invention, detailed step and detailed knot will be proposed in following description
Structure, to explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but
In addition to these detailed descriptions, the present invention can also have other embodiment.
Embodiment one
The pressure sensor of the invention is further described below in conjunction with the accompanying drawings, wherein, figure
1a-1l is the structural representation of sensor described in the embodiment of the invention.
Perform step 10, there is provided substrate, the first interlayer dielectric layer 101 and position are formed with the substrate
In the composite bottom electrode of the patterning on first interlayer dielectric layer, the composite bottom electrode includes
The screen layer 102 and electrode layer 103 for sequentially forming.
Specifically, the substrate comprises at least Semiconductor substrate in this step, in the Semiconductor substrate
In be formed with cmos device, the cmos device includes active device and/or passive device, wherein
The species and number of the active device and passive device can be selected according to specific needs, not
It is confined to a certain kind.
First interlayer dielectric layer 101, the screen layer 102 and institute are sequentially depositing on the substrate
State electrode layer 103；The first interlayer dielectric layer 101 is stated in specific embodiment of the invention and selects SiO2,
But it is not limited to the example.
Wherein, the electrode layer 103 selects SiGe；The screen layer 102 can select metal material,
But it is not limited to the implementation method.
Cushion can also be formed between wherein described screen layer 102 and the electrode layer 103 (in figure not
Show), the cushion can select TiN.
In this embodiment, the composite bottom electrode includes SiGe, cushion TiN, AlCu and TiN,
Its thickness is respectively SiGe 500A, cushion (buff layer) TiN:250A, AlCu 9000A and
TiN 250A。
The composite bed is set to by by the bottom electrode, can be with the drift of control pressure sensor.
Then the screen layer 102 and the electrode layer 103 are patterned, to form the composite bottom electricity
The main body 1031 of pole and the interconnection structure 1032 on the outside of the main body, as illustrated in figure 1 c, wherein scheming
Case method can be included on the electrode layer 103 photoresist layer for forming patterning, then with described
Photoresist layer is screen layer 102 described in mask etch and the electrode layer 103.
Step 11 is performed, the second interlayer dielectric layer is deposited on the composite bottom electrode sacrificial with patterning
Domestic animal material layer 104, to cover the composite bottom electrode.
Specifically, the second interlayer dielectric layer is deposited first in this step, to cover the composite bottom electricity
Pole, as shown in Figure 1 d, second interlayer dielectric layer selects SiO in specific embodiment of the invention2, but
It is not limited to the example.
Then the sacrificial material layer is deposited on second interlayer dielectric layer, to cover the second layer
Between dielectric layer, as shown in fig. le；
Specifically, the sacrificial material layer selection can select organic material, conductive material and dielectric
Material, preferably advanced material layer (Advanced pattern film, APF) or SiGe.
Then the sacrificial material layer is patterned, to remove the main body top both sides of the composite bottom electrode
The sacrificial material layer, only forms the sacrificial material layer above the main body of the composite bottom electrode.
The APF material layers are preferably amorphous carbon material in the present invention, the APF material layers
Deposition can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or atomic layer
Low-pressure chemical vapor deposition (LPCVD), the laser ablation deposition (LAD) of the formation such as deposition (ALD) method
And the one kind in selective epitaxy growth (SEG).Preferred ald (ALD) method in the present invention.
Preferably, chemical-mechanical planarization step is performed after deposition APF material layers, to obtain more smooth table
Face.
Step 12 is performed, top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer
105, to cover second interlayer dielectric layer and the sacrificial material layer.
Specifically, as shown in Figure 1 f, top electrodes are formed in the top of the sacrificial material layer
(membrane), wherein, the top electrodes cause deformation in extraneous pressure change, and its is suitable
The top electrodes 105 of electric capacity in the pressure sensor, after the top electrodes are deformed upon and institute
State the distance between bottom electrode to change, so as to cause the change of electric capacity, and then obtain the change of pressure
Change, realize the sensing to pressure.
Preferably, the top electrodes select SiGe, preferably polysilicon-SiGe (Poly-SiGe)
As the top crown of electric capacity.
Step 13 is performed, the top electrodes and second interlayer dielectric layer is patterned, to form first
Opening, exposes the electrode layer 103 in outside in the composite bottom electrode.
Specifically, as shown in Figure 1 g, the top electrodes and second interlayer are patterned in this step
Dielectric layer, to form the first opening, exposes the interconnection structure of the composite bottom electrode, for institute
State bottom electrode and form electrical connection.
Step 14 is performed, in one layer of the side wall and bottom deposit of the described first opening and the top electrodes phase
Same material layer, to be partially filled with the opening, forms the reeded contact hole of tool.
Specifically, as described in Fig. 1 h, described first is not fully filled in this step and is open, but portion
Divide the ground filling opening, so as to also there is a groove in the opening, to form the connection of spill ring
Line, and complete filling of contact hole not of the prior art, to reduce contact voltage.
Further, the contact hole of the spill ring select with the top electrodes identical material, for example select
With SiGe, static working current (VSK) electric current is reduced by described improvement, improved into one by described
Step improves sensitivity and the yield of the MEMS pressure sensor.
Step 15 is performed, the top electrodes are patterned, is open with forming second on the top electrodes,
Expose the sacrificial material layer 104, the sacrificial material layer is removed, with square under the top electrodes
Into cavity.
Specifically, as shown in figure 1i, second is formed in the top electrodes to be open, expose the sacrifice
Material layer, etches the top electrodes, specifically, first from deep reaction ion etching (DRIE) method
Organic distribution layer (Organic distribution layer, ODL) is formed on the top electrodes, it is siliceous
Bottom antireflective coating (Si-BARC), in the siliceous bottom antireflective coating (Si-BARC)
The photoresist layer of upper deposit patterned, or only form the photoetching for having patterned in the top electrodes
Glue-line, pattern definition on the photoresist to be formed the figure of opening, then with the photoetching
Glue-line is mask layer or etches organic distribution layer, bottom antireflective coating, photoresist layer with described
The lamination of formation second opening for top electrodes described in mask etch are formed.
After the opening of formation second on the top electrodes, by the described second opening to expendable material
Layer is etched, and to remove sacrificial material layer completely, forms sensor cavities.
In this step, in order to while sacrificial material layer is removed shadow will not be caused to the top electrodes
Ring, be etched from the larger method of etching selectivity, can be selected in the specific embodiment of the invention
Dry etching, reactive ion etching (RIE), ion beam milling, plasma etching.
Sacrificial material layer described in O base etchant etchings is selected in this step, in one embodiment of the invention
Middle selection O2Atmosphere, can also simultaneously add other a small amount of gases such as CF4、CO2、N2, it is described
Etching pressure can be 50-200mTorr, and preferably 100-150mTorr, power is 200-600W,
Heretofore described etching period is 5-80s, more preferably 10-60s, while in the present invention from larger
Gas flow, preferably, in O of the present invention2Flow be 30-300sccm, more preferably 50-100
sccm。
Perform step 16, form coating above the top electrodes, with fill it is described second opening and
Groove in the contact hole.
After the pressure sensor cavities are formed, methods described still further comprises deposition coating,
To be filled in the second opening formed in the top electrodes, the top electrodes of closing are formed.
So far, the introduction of the correlation step of the manufacture method of the pressure sensor of the embodiment of the present invention is completed.
After the above step, the step of forming transistor and other correlation steps can also be included, herein not
Repeat again.Also, in addition to the foregoing steps, the manufacture method of the present embodiment can also it is above-mentioned each
Include other steps among step or between different steps, these steps can be by the prior art
Various techniques realize that here is omitted.
The present invention is in order to solve problems of the prior art, there is provided a kind of MEMS pressure sensings
The preparation method of device, wherein the sensor selects the composite bottom electrode, the composite bottom electrode to include
The screen layer and electrode layer for sequentially forming, for example its can select SiGe (500A)/cushion
(TiN:The composite bed of 250A)/AlCu9000A/TiN250A, is sensed by the composite bed with control pressure
The drift of device, wherein, when the top electrodes and the bottom electrode are interconnected, the contact hole is simultaneously
Non-full filled but be partially filled with to form the reeded contact hole of tool, and the contact hole is selected
SiGe, static working current (VSK) electric current is reduced by described improvement, further improves the MEMS
The sensitivity of pressure sensor and yield.
Fig. 2 is the preparation technology stream of MEMS pressure sensor described in the embodiment of the invention
Cheng Tu, specifically includes following steps：
Step S1：Substrate is provided, the first interlayer dielectric layer is formed with the substrate and positioned at described
The composite bottom electrode of the patterning on the first interlayer dielectric layer, the composite bottom electrode includes shape successively
Into screen layer and electrode layer；
Step S2：The sacrifice material of the second interlayer dielectric layer and patterning is deposited on the composite bottom electrode
The bed of material, to cover the composite bottom electrode；
Step S3：Top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer, with
Cover second interlayer dielectric layer and the sacrificial material layer；
Step S4：The top electrodes and second interlayer dielectric layer are patterned, to form the first opening,
Expose the electrode layer in the composite bottom electrode in outside；
Step S5：In one layer of the side wall and bottom deposit of the described first opening and the top electrodes identical
Material layer, to be partially filled with first opening, forms the reeded contact hole of tool.
Embodiment two
As shown in figure 11, the pressure sensor includes：
Bottom electrode, the bottom electrode includes the screen layer 102 and electrode layer 103 that sequentially form；
Top electrodes, positioned at the top of the bottom electrode, and the top electrodes and the bottom electrode
Between be formed with cavity；
Contact hole, electrically connects positioned at the top of the electrode layer 103 and with the top electrodes, wherein
The concave structure of contact hole.
Wherein, the bottom electrode includes electrode body and the interconnection structure on the outside of the electrode body,
Wherein described contact hole is located at the top of the interconnection structure.
Wherein, the contact hole is centrally formed fluted, its overall concave ring, the spill ring
Bottom connects the electrode layer 103, and the two ends that the spill is changed connect the top electrodes.
Wherein, the electrode layer 103, the top electrodes and/or the contact hole select SiGe.
Composite bottom electrode of the present invention includes the screen layer and electrode layer that sequentially form, and for example it can be with
From SiGe (500A)/cushion (TiN:The composite bed of 250A)/AlCu9000A/TiN250A, by institute
Composite bed is stated to improve the drift of pressure sensor, wherein, the top electrodes and the bottom electrode enter
During row interconnection, the contact hole and non-full filled but be partially filled with to form the reeded contact hole of tool,
And the contact hole selects SiGe, static working current (VSK) electric current is reduced by described improvement,
Further increase sensitivity and the yield of the MEMS pressure sensor.
Embodiment three
Present invention also offers a kind of electronic installation, including the MEMS pressure sensings described in embodiment two
Device.Wherein, MEMS pressure sensor is the MEMS pressure sensor described in embodiment two, or according to
The MEMS pressure sensor that preparation method described in embodiment one is obtained.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book,
Game machine, television set, VCD, DVD, navigator, camera, video camera, recording pen, MP3,
Any electronic product such as MP4, PSP or equipment, or it is any including the MEMS pressure sensor
Intermediate products.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS pressure sensings
Device, thus with better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-mentioned implementation
Example is only intended to citing and descriptive purpose, and is not intended to limit the invention to described embodiment
In the range of.In addition it will be appreciated by persons skilled in the art that the invention is not limited in above-mentioned implementation
Example, teaching of the invention can also make more kinds of variants and modifications, these variants and modifications
Within all falling within scope of the present invention.Protection scope of the present invention will by attached right
Book and its equivalent scope is asked to be defined.
Claims (10)
1. a kind of preparation method of MEMS pressure sensor, it is characterised in that including：
Substrate is provided, the first interlayer dielectric layer is formed with the substrate and positioned at first interlayer
The composite bottom electrode of the patterning on dielectric layer, the composite bottom electrode includes the shielding for sequentially forming
Layer and electrode layer；
The sacrificial material layer of the second interlayer dielectric layer and patterning is deposited on the composite bottom electrode, with
Cover the composite bottom electrode；
Top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer, it is described to cover
Second interlayer dielectric layer and the sacrificial material layer；
The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, exposes position
Electrode layer in the composite bottom electrode in outside；
In one layer of the side wall and bottom deposit of the described first opening and the top electrodes identical material layer,
To be partially filled with first opening, the reeded contact hole of tool is formed.
2. method according to claim 1, it is characterised in that methods described is still further comprised：
The top electrodes are patterned, is open with forming second on the top electrodes, exposed described sacrificial
Domestic animal material layer；
The sacrificial material layer is removed, with top electrodes cavity formed below；
Form coating above the top electrodes, with fill it is described second opening and the contact hole in
Groove.
3. method according to claim 1, it is characterised in that form the composite bottom electrode
Step includes：
Substrate is provided, cmos device is formed with the substrate, described the is deposited on the substrate
One interlayer dielectric layer, the screen layer and the electrode layer；
The screen layer and the electrode layer are patterned, to form main body and the position of the composite bottom electrode
Interconnection structure on the outside of the main body.
4. method according to claim 3, it is characterised in that deposition second interlayer dielectric layer
The step of with the sacrificial material layer for patterning, includes：
Second interlayer dielectric layer and the sacrificial material layer are deposited, to cover the composite bottom electrode；
The sacrificial material layer is patterned, it is sacrificial described in the both sides of the composite bottom electrode main body top to remove
Domestic animal material layer.
5. method according to claim 1, it is characterised in that the electrode layer and/or the top
Portion's electrode selects SiGe.
6. a kind of MEMS pressure sensor, it is characterised in that the MEMS pressure sensor includes：
Bottom electrode, the bottom electrode includes the screen layer and electrode layer that sequentially form；
Top electrodes, positioned at the top of the bottom electrode, and the top electrodes and the bottom electrode
Between be formed with cavity；
Contact hole, electrically connects, wherein described positioned at the top of the electrode layer and with the top electrodes
The concave structure of contact hole.
7. MEMS pressure sensor according to claim 6, it is characterised in that the bottom
Electrode includes electrode body and the interconnection structure on the outside of the electrode body, wherein contact hole position
In the top of the interconnection structure.
8. MEMS pressure sensor according to claim 6, it is characterised in that the contact
Being centrally formed for hole is fluted, and its overall concave ring, the bottom of the spill ring connects the electrode layer,
The two ends that the spill is changed connect the top electrodes.
9. MEMS pressure sensor according to claim 6, it is characterised in that the electrode
Layer, the top electrodes and/or the contact hole select SiGe.
10. a kind of described MEMS pressure sensor of one of electronic installation, including claim 6 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511029874.0A CN106932138B (en) | 2015-12-31 | 2015-12-31 | A kind of MEMS pressure sensor and preparation method thereof, electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511029874.0A CN106932138B (en) | 2015-12-31 | 2015-12-31 | A kind of MEMS pressure sensor and preparation method thereof, electronic device |
Publications (2)
| Publication Number | Publication Date |
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| CN106932138A true CN106932138A (en) | 2017-07-07 |
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| CN110255489A (en) * | 2019-05-31 | 2019-09-20 | 武汉大学 | A kind of three dimensional monolithic integrated sensor system |
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