CN106932138B - A kind of MEMS pressure sensor and preparation method thereof, electronic device - Google Patents
A kind of MEMS pressure sensor and preparation method thereof, electronic device Download PDFInfo
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- CN106932138B CN106932138B CN201511029874.0A CN201511029874A CN106932138B CN 106932138 B CN106932138 B CN 106932138B CN 201511029874 A CN201511029874 A CN 201511029874A CN 106932138 B CN106932138 B CN 106932138B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a kind of MEMS pressure sensors and preparation method thereof, electronic device.The method includes providing substrate, it is formed with the first interlayer dielectric layer and the patterned composite bottom electrode on first interlayer dielectric layer on the substrate, the composite bottom electrode includes the shielded layer and electrode layer sequentially formed；The second interlayer dielectric layer and patterned sacrificial material layer are deposited, on composite bottom electrode to cover the composite bottom electrode；Top electrodes are formed on the second interlayer dielectric layer and the sacrificial material layer, to cover second interlayer dielectric layer and the sacrificial material layer；The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, expose the electrode layer being located in the composite bottom electrode in outside；In the side wall and one layer of bottom deposit material layer identical with the top electrodes of first opening, has reeded contact hole to be formed.
Description
Technical field
The present invention relates to semiconductor field, in particular it relates to a kind of MEMS pressure sensor and preparation method thereof,
Electronic device.
Background technique
With the continuous development of semiconductor technology, motion sensor (motion sensor) class product in the market, intelligence
Energy mobile phone, integrated CMOS and MEMS (MEMS) device have become most mainstream, state-of-the-art technology, and with technology
Update, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower
Loss.
Wherein, MEMS pressure sensor is widely used in automotive electronics: such as TPMS, engine oil pressure sensor, vapour
Vehicle brake system air pressure probe, air intake manifold of automotive engine pressure sensor (TMAP), common rail for diesel engine pressure pass
Sensor；Consumer electronics: such as tire gauge, sphygmomanometer, cupboard scale, health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, oven,
Dust catcher pressure sensor, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level
Pressure sensor；Industrial electronic: such as digital pressure gauge, digital stream scale, industrial batching weighing.
Pressure sensor includes type polar distance variable capacitance sensor, capacitor sensor with changed area and change in the prior art
Dielectric constant type capacitance sensor, wherein including fixed plate (fixed plate) and dynamic in the type polar distance variable capacitance sensor
Pole plate (moving plate), wherein the movable plate electrode (moving plate) is moved under the effect of the pressure, it is described fixed
The distance between pole plate and movable plate electrode change, and capacitor changes, and obtain pressure by the variation detection of the capacitor
Variation.
Two main problems are faced in the development of pressure sensor: first is the drift of pressure sensor (PS)；
Such as pressure sensor height (Altitude) and temperature (TEMP) drift, temperature and pressure can all cause the PS to drift about, the
Second is that the problem that static working current (VSK) electric current is too low, it is excessively high that the too low problem of electric current is possible as contact resistance
Problem.
Therefore, above-mentioned drawback exists in the prior art, need to existing pressure sensor structure and preparation method into
Row improves, and to eliminate the above problem, improves the performance and yield of device.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention is in order to overcome the problems, such as that presently, there are provide a kind of preparation method of MEMS pressure sensor, the side
Method includes:
Substrate is provided, be formed with the first interlayer dielectric layer on the substrate and is located on first interlayer dielectric layer
Patterned composite bottom electrode, the composite bottom electrode includes the shielded layer and electrode layer sequentially formed；
The second interlayer dielectric layer and patterned sacrificial material layer are deposited on the composite bottom electrode, described in covering
Composite bottom electrode；
Top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer, to cover second interlayer
Dielectric layer and the sacrificial material layer；
The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, exposes and is located at outside
Electrode layer in the composite bottom electrode；
In the side wall and one layer of bottom deposit material layer identical with the top electrodes of first opening, partially to fill out
First opening is filled, is formed and has reeded contact hole.
Optionally, the method may further comprise:
The top electrodes are patterned, to form the second opening on the top electrodes, expose the sacrificial material layer；
The sacrificial material layer is removed, to form cavity below the top electrodes；
Coating is formed above the top electrodes, to fill the groove in second opening and the contact hole.
Optionally, the step of forming the composite bottom electrode include:
Substrate is provided, cmos device is formed on the substrate, deposits first interlayer dielectric on the substrate
Layer, the shielded layer and the electrode layer；
The shielded layer and the electrode layer are patterned, to form the main body of the composite bottom electrode and be located at the master
The interconnection structure of external side.
Optionally, it deposits second interlayer dielectric layer and the step of patterned sacrificial material layer includes:
Second interlayer dielectric layer and the sacrificial material layer are deposited, to cover the composite bottom electrode；
The sacrificial material layer is patterned, to remove expendable material described in two sides above the composite bottom electrode main body
Layer.
Optionally, the electrode layer and/or the top electrodes select SiGe.
The present invention also provides a kind of MEMS pressure sensors, which is characterized in that the MEMS pressure sensor includes:
Bottom electrode, the bottom electrode include the shielded layer and electrode layer sequentially formed；
Top electrodes are formed positioned at the top of the bottom electrode, and between the top electrodes and the bottom electrode
There is cavity；
Contact hole, positioned at the electrode layer top and be electrically connected with the top electrodes, wherein the contact hole is in
Concave structure.
Optionally, the bottom electrode includes electrode body and the interconnection structure on the outside of the electrode body, wherein
The contact hole is located at the top of the interconnection structure.
Optionally, the contact hole is centrally formed fluted, whole concave ring, the bottom connection of the spill ring
The electrode layer, the both ends that the spill is changed connect the top electrodes.
Optionally, the electrode layer, the top electrodes and/or the contact hole select SiGe.
The present invention also provides a kind of electronic devices, including above-mentioned MEMS pressure sensor.
In order to solve the problems in the existing technology the present invention, provides a kind of preparation side of MEMS pressure sensor
Method, wherein the sensor selects composite bottom electrode, the composite bottom electrode includes the shielded layer and electrode sequentially formed
Layer, such as it can select SiGe (500A)/buffer layer (TiN:250A)/AlCu9000A/TiN250A composite layer, pass through institute
Composite layer is stated to control the drift of pressure sensor, wherein described when the top electrodes and the bottom electrode are interconnected
Contact hole and non-full filled but be partially filled with to be formed and have reeded contact hole, and the contact hole selects SiGe,
By the improvement reduce static working current (VSK) electric current, further increase the MEMS pressure sensor sensitivity and
Yield.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 a-1l is the structural schematic diagram of sensor described in the embodiment of the invention；
Fig. 2 is the preparation technology flow chart of MEMS pressure sensor described in the embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiments.
Embodiment one
The pressure sensor of the invention is further described with reference to the accompanying drawing, wherein Fig. 1 a-1l is this hair
The structural schematic diagram of sensor described in a bright specific embodiment.
Step 10 is executed, substrate is provided, the first interlayer dielectric layer 101 is formed in the substrate and positioned at described first
Patterned composite bottom electrode on interlayer dielectric layer, the composite bottom electrode include 102 He of shielded layer sequentially formed
Electrode layer 103.
Specifically, the substrate includes at least semiconductor substrate in this step, is formed in the semiconductor substrate
Cmos device, the cmos device includes active device and/or passive device, wherein the kind of the active device and passive device
Class and number can be selected according to specific needs, it is not limited to a certain.
It is sequentially depositing first interlayer dielectric layer 101, the shielded layer 102 and the electrode layer on the substrate
103；The first interlayer dielectric layer 101 is stated in a specific embodiment of the invention selects SiO2, but it is not limited to the example.
Wherein, the electrode layer 103 selects SiGe；The shielded layer 102 can select metal material, but be not limited to
The embodiment.
Buffer layer (not shown) can also be wherein formed between the shielded layer 102 and the electrode layer 103, it is described
Buffer layer can select TiN.
In this embodiment, the composite bottom electrode includes SiGe, buffer layer TiN, AlCu and TiN, thickness difference
For SiGe 500A, buffer layer (buff layer) TiN:250A, AlCu 9000A and TiN 250A.
By setting the composite layer for the bottom electrode, the drift of pressure sensor can control.
Then the shielded layer 102 and the electrode layer 103 are patterned, to form the main body of the composite bottom electrode
1031 and the interconnection structure 1032 on the outside of the main body, as illustrated in figure 1 c, wherein patterning method may include described
Patterned photoresist layer is formed on electrode layer 103, then using the photoresist layer as shielded layer 102 described in mask etch and institute
State electrode layer 103.
Step 11 is executed, the second interlayer dielectric layer and patterned sacrificial material layer are deposited on the composite bottom electrode
104, to cover the composite bottom electrode.
Specifically, the second interlayer dielectric layer is deposited first in this step, to cover the composite bottom electrode, such as Fig. 1 d
Shown, the second interlayer dielectric layer selects SiO in a specific embodiment of the invention2, but it is not limited to the example.
Then the sacrificial material layer is deposited on second interlayer dielectric layer, to cover second interlayer dielectric
Layer, as shown in fig. le；
Specifically, the sacrificial material layer selection can select organic material, conductive material and dielectric material, preferably
Advanced material layer (Advanced pattern film, APF) or SiGe.
Then the sacrificial material layer is patterned, sacrifice described in two sides above the main body to remove the composite bottom electrode
Material layer only forms the sacrificial material layer above the main body of the composite bottom electrode.
The APF material layer is preferably amorphous carbon material in the present invention, and the deposition of the APF material layer can be selected
The low pressure chemical gas of the formation such as chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or atomic layer deposition (ALD) method
Mutually one of deposition (LPCVD), laser ablation deposition (LAD) and selective epitaxy growth (SEG).It is preferred in the present invention former
Sublayer deposits (ALD) method.Preferably, chemical-mechanical planarization step is executed after deposition APF material layer, it is more smooth to obtain
Surface.
Step 12 is executed, forms top electrodes 105, on second interlayer dielectric layer and the sacrificial material layer to cover
Cover second interlayer dielectric layer and the sacrificial material layer.
Specifically, as shown in Figure 1 f, top electrodes (membrane) is formed in the top of the sacrificial material layer, wherein
The top electrodes cause deformation in extraneous pressure change, are equivalent to the top electrodes of capacitor in the pressure sensor
105, the top electrodes are changed with the distance between the bottom electrode after deformation occurs, so as to cause the change of capacitor
Change, and then obtain the variation of pressure, realizes the sensing to pressure.
Preferably, the top electrodes select SiGe, preferably polysilicon-SiGe (Poly-SiGe) is as capacitor
Top crown.
Step 13 is executed, the top electrodes and second interlayer dielectric layer are patterned, to form the first opening, is exposed
The electrode layer 103 in outside in the composite bottom electrode.
Specifically, as shown in Figure 1 g, the top electrodes and second interlayer dielectric layer are patterned in this step, with
The first opening is formed, the interconnection structure of the composite bottom electrode is exposed, for being electrically connected with bottom electrode formation.
Step 14 is executed, in the side wall and one layer of bottom deposit material identical with the top electrodes of first opening
Layer forms to be partially filled with the opening and has reeded contact hole.
Specifically, as described in Fig. 1 h, first opening is not fully filled in this step, but is partially filled with institute
Opening is stated, so as to also there is a groove in the opening, to form the connecting line of spill ring, and it is not in the prior art complete
The contact hole of full packing, to reduce contact voltage.
Further, the contact hole of the spill ring selects material identical with the top electrodes, such as selects SiGe, leads to
Crossing the improvement reduces static working current (VSK) electric current, further improves the MEMS pressure sensing by described
The sensitivity of device and yield.
Step 15 is executed, the top electrodes are patterned, is open with forming second on the top electrodes, described in exposing
Sacrificial material layer 104 removes the sacrificial material layer, to form cavity below the top electrodes.
Specifically, as shown in figure 1i, the second opening is formed in the top electrodes, exposes the sacrificial material layer, is selected
The top electrodes are etched with deep reaction ion etching (DRIE) method to be specifically formed on the top electrodes first
Machine distribution layer (Organic distribution layer, ODL), siliceous bottom antireflective coating (Si-BARC), described
The photoresist layer of deposit patterned on siliceous bottom antireflective coating (Si-BARC), or in the top electrodes only shape
At the photoresist layer patterned, pattern definition on the photoresist figure for the opening of being formed, then with the light
Photoresist layer is mask layer or with the lamination that the etching organic distribution layer, bottom antireflective coating, photoresist layer are formed is
Top electrodes described in mask etch form second opening.
It is formed on the top electrodes after the second opening, sacrificial material layer is lost by second opening
It carves, to completely remove sacrificial material layer, forms sensor cavities.
In this step, it in order to be impacted to the top electrodes while removing sacrificial material layer, selects
The biggish method of etching selectivity is etched, and dry etching, reactive ion erosion can be selected in the specific embodiment of the invention
Carve (RIE), ion beam milling, plasma etching.
Sacrificial material layer described in O base etchant etching is selected in this step, selects O in one embodiment of this invention2
Atmosphere, other a small amount of gas such as CF can also be added simultaneously4、CO2、N2, the etching pressure can be 50-200mTorr,
Preferably 100-150mTorr, power 200-600W, in the present invention the etching period be 5-80s, more preferable 10-60s,
Biggish gas flow is selected in the present invention simultaneously, preferably, in O of the present invention2Flow be 30-300sccm, more
Preferably 50-100sccm.
Step 16 is executed, forms coating above the top electrodes, to fill second opening and the contact
Groove in hole.
After forming the pressure sensor cavities, the method still further comprises deposition coating, to be filled in
The second opening formed in the top electrodes, forms closed top electrodes.
So far, the introduction of the correlation step of the manufacturing method of the pressure sensor of the embodiment of the present invention is completed.Above-mentioned
After step, it can also include the steps that forming transistor and other correlation steps, details are not described herein again.Also, in addition to upper
It states except step, the manufacturing method of the present embodiment can also include other among above-mentioned each step or between different steps
Step, these steps can realize that details are not described herein again by various techniques in the prior art.
In order to solve the problems in the existing technology the present invention, provides a kind of preparation side of MEMS pressure sensor
Method, wherein the sensor selects composite bottom electrode, the composite bottom electrode includes the shielded layer and electrode sequentially formed
Layer, such as it can select SiGe (500A)/buffer layer (TiN:250A)/AlCu9000A/TiN250A composite layer, pass through institute
Composite layer is stated to control the drift of pressure sensor, wherein described when the top electrodes and the bottom electrode are interconnected
Contact hole and non-full filled but be partially filled with to be formed and have reeded contact hole, and the contact hole selects SiGe,
By the improvement reduce static working current (VSK) electric current, further increase the MEMS pressure sensor sensitivity and
Yield.
Fig. 2 is the preparation technology flow chart of MEMS pressure sensor described in the embodiment of the invention, specific to wrap
Include following steps:
Step S1: providing substrate, is formed with the first interlayer dielectric layer on the substrate and is located at first interlayer
Patterned composite bottom electrode on dielectric layer, the composite bottom electrode include the shielded layer and electrode layer sequentially formed；
Step S2: depositing the second interlayer dielectric layer and patterned sacrificial material layer on the composite bottom electrode, with
Cover the composite bottom electrode；
Step S3: forming top electrodes on second interlayer dielectric layer and the sacrificial material layer, described in covering
Second interlayer dielectric layer and the sacrificial material layer；
Step S4: patterning the top electrodes and second interlayer dielectric layer, and to form the first opening, exposing is located at
Electrode layer in the composite bottom electrode in outside；
Step S5: the side wall being open described first and one layer of bottom deposit material layer identical with the top electrodes,
To be partially filled with first opening, is formed and have reeded contact hole.
Embodiment two
As shown in figure 11, the pressure sensor includes:
Bottom electrode, the bottom electrode include the shielded layer 102 and electrode layer 103 sequentially formed；
Top electrodes are formed positioned at the top of the bottom electrode, and between the top electrodes and the bottom electrode
There is cavity；
Contact hole, positioned at the electrode layer 103 top and be electrically connected with the top electrodes, wherein the contact hole
Concave structure.
Wherein, the bottom electrode includes electrode body and the interconnection structure on the outside of the electrode body, wherein institute
State the top that contact hole is located at the interconnection structure.
Wherein, the contact hole is centrally formed fluted, and the bottom of whole concave ring, the spill ring connects institute
Electrode layer 103 is stated, the both ends that the spill is changed connect the top electrodes.
Wherein, the electrode layer 103, the top electrodes and/or the contact hole select SiGe.
Composite bottom electrode of the present invention includes the shielded layer and electrode layer sequentially formed, such as it can select SiGe
(500A)/buffer layer (TiN:250A)/AlCu9000A/TiN250A composite layer, by the composite layer to improve pressure biography
The drift of sensor, wherein when the top electrodes and the bottom electrode are interconnected, the contact hole and non-full filled and
It is to be partially filled with to be formed and have reeded contact hole, and the contact hole selects SiGe, is reduced by the improvement static
Operating current (VSK) electric current, further improves sensitivity and the yield of the MEMS pressure sensor.
Embodiment three
The present invention also provides a kind of electronic devices, including MEMS pressure sensor described in embodiment two.Wherein, MEMS
Pressure sensor is MEMS pressure sensor described in embodiment two, or according to embodiment one preparation method obtains
MEMS pressure sensor.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment can also be
Any intermediate products including the MEMS pressure sensor.The electronic device of the embodiment of the present invention, it is above-mentioned due to having used
MEMS pressure sensor, thus there is better performance.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of preparation method of MEMS pressure sensor characterized by comprising
Substrate is provided, is formed with the first interlayer dielectric layer and the figure on first interlayer dielectric layer on the substrate
The composite bottom electrode of case, the composite bottom electrode include the shielded layer and electrode layer sequentially formed；
The second interlayer dielectric layer and patterned sacrificial material layer are deposited on the composite bottom electrode, it is described compound to cover
Bottom electrode；
Top electrodes are formed on second interlayer dielectric layer and the sacrificial material layer, to cover second interlayer dielectric
Layer and the sacrificial material layer；
The top electrodes and second interlayer dielectric layer are patterned, to form the first opening, exposes and is located at the described of outside
Electrode layer in composite bottom electrode；And
In the side wall and one layer of bottom deposit material layer identical with the top electrodes of first opening, to be partially filled with
The first opening is stated, is formed and has reeded contact hole.
2. the method according to claim 1, wherein the method may further comprise:
The top electrodes are patterned, to form the second opening on the top electrodes, expose the sacrificial material layer；
The sacrificial material layer is removed, to form cavity below the top electrodes；
Coating is formed above the top electrodes, to fill the groove in second opening and the contact hole.
3. the method according to claim 1, wherein the step of forming the composite bottom electrode includes:
Substrate is provided, cmos device is formed on the substrate, deposits first interlayer dielectric layer, institute on the substrate
State shielded layer and the electrode layer；
The shielded layer and the electrode layer are patterned, to form the main body of the composite bottom electrode and be located at outside the main body
The interconnection structure of side.
4. according to the method described in claim 3, it is characterized in that, deposition second interlayer dielectric layer and patterned described
The step of sacrificial material layer includes:
Second interlayer dielectric layer and the sacrificial material layer are deposited, to cover the composite bottom electrode；
The sacrificial material layer is patterned, to remove sacrificial material layer described in two sides above the composite bottom electrode main body.
5. the method according to claim 1, wherein the electrode layer and/or the top electrodes select SiGe.
6. a kind of MEMS pressure sensor, which is characterized in that the MEMS pressure sensor includes:
Bottom electrode, the bottom electrode include the shielded layer and electrode layer sequentially formed；
Top electrodes are formed free positioned at the top of the bottom electrode, and between the top electrodes and the bottom electrode
Chamber；
Contact hole, positioned at the electrode layer top and be electrically connected with the top electrodes, wherein the contact hole is concave
Structure.
7. MEMS pressure sensor according to claim 6, which is characterized in that the bottom electrode include electrode body and
Interconnection structure on the outside of the electrode body, wherein the contact hole is located at the top of the interconnection structure.
8. MEMS pressure sensor according to claim 6, which is characterized in that being centrally formed with for the contact hole is recessed
The bottom of slot, whole concave ring, the spill ring connects the electrode layer, and the both ends that the spill is changed connect the top
Electrode.
9. MEMS pressure sensor according to claim 6, which is characterized in that the electrode layer, the top electrodes and/
Or the contact hole selects SiGe.
10. a kind of electronic device, including MEMS pressure sensor described in one of claim 6 to 9.
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| CN108147360A (en) * | 2018-01-08 | 2018-06-12 | 杭州士兰微电子股份有限公司 | MEMS structure, MEMS component and its manufacturing method |
| CN110255489B (en) * | 2019-05-31 | 2022-07-22 | 武汉敏声新技术有限公司 | Three-dimensional monolithic integrated sensor system |
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