CN107123700A - A kind of hollow polyimide fiber solar micro battery and its manufacture method - Google Patents

A kind of hollow polyimide fiber solar micro battery and its manufacture method Download PDF

Info

Publication number
CN107123700A
CN107123700A CN201710269490.9A CN201710269490A CN107123700A CN 107123700 A CN107123700 A CN 107123700A CN 201710269490 A CN201710269490 A CN 201710269490A CN 107123700 A CN107123700 A CN 107123700A
Authority
CN
China
Prior art keywords
film
film layer
pin
polyimide fiber
prepare
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710269490.9A
Other languages
Chinese (zh)
Inventor
郭清海
郭品铧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Mengtai Textile Fiber Co Ltd
Original Assignee
Guangdong Mengtai Textile Fiber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Mengtai Textile Fiber Co Ltd filed Critical Guangdong Mengtai Textile Fiber Co Ltd
Priority to CN201710269490.9A priority Critical patent/CN107123700A/en
Priority to PCT/CN2017/000331 priority patent/WO2018195675A1/en
Publication of CN107123700A publication Critical patent/CN107123700A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to a kind of hollow polyimide fiber solar micro battery and its manufacture method, carry out in following processing steps：Hollow polyimide fiber cleaning → hollow polyimide fiber surface aluminium plating membrane → on aluminium plating membrane prepare the first PIN film layers → prepares the 2nd PIN film layers → TCO or ITO nesa coating layer are prepared in the 2nd PIN film layers in the first PIN film layers.Have the advantages that pliability is strong, spinnability is strong, photoelectricity transfer effect is high.

Description

一种中空聚酰亚胺纤维太阳能微电池及其制造方法A kind of hollow polyimide fiber solar cell and its manufacturing method

技术领域technical field

本发明涉及一种中空聚酰亚胺纤维太阳能微电池及其制造方法。The invention relates to a hollow polyimide fiber solar micro battery and a manufacturing method thereof.

背景技术Background technique

太阳能以其环保、取之不尽等优点受到了人们青睐；随着技术不断创新，太阳能已在不少领域得到应用。然而，现有太阳能电池体积大、不可挠等特点制约其在一些行业领域的发展。Solar energy is favored by people for its advantages of environmental protection and inexhaustibility; with continuous technological innovation, solar energy has been applied in many fields. However, the large size and inflexibility of existing solar cells restrict their development in some industries.

发明内容Contents of the invention

本发明的目的在于提供一种可挠性强、可纺性强、光电转移效果高的中空聚酰亚胺纤维太阳能微电池及其制造方法。The object of the present invention is to provide a hollow polyimide fiber solar micro-battery with strong flexibility, strong spinnability and high photoelectric transfer effect and its manufacturing method.

本发明目的的实现，采用六室连续VHF-PECVD即六室连续超高频率等离子体辅助化学气相沉积技术，在中空聚酰亚胺纤维表面生成双层PIN膜层结构，提高其光电转移效果。The object of the present invention is achieved by using six-chamber continuous VHF-PECVD, that is, six-chamber continuous ultra-high frequency plasma-assisted chemical vapor deposition technology, to form a double-layer PIN film structure on the surface of the hollow polyimide fiber to improve its photoelectric transfer effect.

本发明，按以下工艺步骤进行：中空聚酰亚胺纤维清洗→中空聚酰亚胺纤维表面镀铝膜层→在镀铝膜层上制备第一PIN膜层→在第一PIN膜层上制备第二PIN膜层→在第二PIN膜层上制备TCO或ITO透明导电膜层；The present invention is carried out according to the following process steps: cleaning of hollow polyimide fiber → aluminized film layer on the surface of hollow polyimide fiber → preparing the first PIN film layer on the aluminized film layer → preparing on the first PIN film layer The second PIN film layer → prepare a TCO or ITO transparent conductive film layer on the second PIN film layer;

所述中空聚酰亚胺纤维清洗利用超声波清洗并干燥处理；The hollow polyimide fiber is cleaned by ultrasonic cleaning and dried;

所述中空聚酰亚胺纤维表面镀铝膜层采用测控溅射技术，在中空聚酰亚胺纤维外表面镀一层铝膜层而作为负电极，铝膜层厚度为300~400nm，镀膜温度为200~300℃；The aluminum coating layer on the surface of the hollow polyimide fiber adopts measurement and control sputtering technology, and a layer of aluminum film layer is coated on the outer surface of the hollow polyimide fiber as a negative electrode. The thickness of the aluminum film layer is 300~400nm, and the coating temperature 200~300℃;

所述第一PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在镀铝膜层上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第一PIN膜层的制备；The preparation of the first PIN film layer is to adopt six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the aluminum-coated film layer, the power excitation frequency is 13.56MHz, and the film thickness is 50~100nm; Prepare an I-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 300-400nm; then, prepare a P-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 50-100nm to complete the first PIN film layer preparation of

所述第二PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在第一PIN膜层的P型非晶硅薄膜上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第二PIN膜层的制备；The preparation of the second PIN film layer is to use six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the P-type amorphous silicon film of the first PIN film layer, and the power excitation frequency is 13.56MHz. The thickness of the film is 50~100nm; then prepare an I-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 300~400nm; then, prepare a P-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 50~ 100nm, complete the preparation of the second PIN film layer;

所述TCO或ITO透明导电膜层的制备是采用磁控溅射镀膜技术，在第二PIN膜层的P型非晶硅薄膜上制备TCO或ITO透明导电薄膜并引出正电极。The TCO or ITO transparent conductive film layer is prepared by magnetron sputtering coating technology, and the TCO or ITO transparent conductive film is prepared on the P-type amorphous silicon film of the second PIN film layer and a positive electrode is drawn out.

本发明，具有以下积极效果：The present invention has the following positive effects:

1）、聚酰亚胺纤维具有良好的可纺性，可以制成各类特殊场合使用的纺织品。由于具有耐高低温特性、阻燃性，不熔滴，离火自熄以及极佳的隔温性，聚酰亚胺纤维隔热防护服穿着舒适，皮肤适应性好，永久阻燃，而且尺寸稳定、安全性好、使用寿命长，和其他纤维相比，由于材料本身的导热系数低，也是绝佳的隔温材料，是防护服装的理想纤维材料；本发明采用中空聚酰亚胺纤维更好地强化其可挠性、可纺性，根据需要，可制造出不同形状、大小的太阳能微电池；1) Polyimide fiber has good spinnability and can be made into various textiles for special occasions. Due to its high and low temperature resistance, flame retardancy, non-melting, self-extinguishing when away from fire and excellent temperature insulation, polyimide fiber thermal insulation protective clothing is comfortable to wear, good skin adaptability, permanent flame retardancy, and the size Stability, good safety, long service life, compared with other fibers, due to the low thermal conductivity of the material itself, it is also an excellent heat insulation material, and is an ideal fiber material for protective clothing; the hollow polyimide fiber used in the present invention is more Better enhance its flexibility and spinnability, and according to needs, solar micro-batteries of different shapes and sizes can be manufactured;

2）、采用六室连续VHF-PECVD即六室连续超高频率等离子体辅助化学气相沉积技术，在中空聚酰亚胺纤维表面生成双层PIN膜层结构，提高其光电转移效果。2) Using six-chamber continuous VHF-PECVD, that is, six-chamber continuous ultra-high frequency plasma-assisted chemical vapor deposition technology, to form a double-layer PIN film structure on the surface of the hollow polyimide fiber to improve its photoelectric transfer effect.

本发明，具有可挠性强、可纺性强、光电转移效果高的优点，利用中空聚酰亚胺纤维的可编织性，根据需要制造不同形状、不同容量太阳能电池，可以应用到窗帘、广告牌、装饰品、玩具等领域。The present invention has the advantages of strong flexibility, strong spinnability, and high photoelectric transfer effect. Using the weavability of hollow polyimide fibers, solar cells of different shapes and capacities can be manufactured according to needs, and can be applied to curtains, advertisements, etc. Cards, decorations, toys and other fields.

附图说明Description of drawings

图1是本发明的一个实施例的结构示意图。Fig. 1 is a structural schematic diagram of an embodiment of the present invention.

图中，1、中空聚酰亚胺纤维；2、镀铝膜层；3、第一PIN膜层；4、第二PIN膜层；5、TCO或ITO透明导电膜层。In the figure, 1. hollow polyimide fiber; 2. aluminized film layer; 3. first PIN film layer; 4. second PIN film layer; 5. TCO or ITO transparent conductive film layer.

具体实施方式detailed description

参照图1，一种中空聚酰亚胺纤维太阳能微电池的制造方法，按以下工艺步骤进行：中空聚酰亚胺纤维清洗→中空聚酰亚胺纤维表面镀铝膜层→在镀铝膜层上制备第一PIN膜层→在第一PIN膜层上制备第二PIN膜层→在第二PIN膜层上制备TCO或ITO透明导电膜层；With reference to Fig. 1, a kind of manufacturing method of hollow polyimide fiber solar energy micro-battery is carried out according to the following process steps: hollow polyimide fiber cleaning→hollow polyimide fiber surface aluminized film layer→aluminized film layer Prepare the first PIN film layer → prepare the second PIN film layer on the first PIN film layer → prepare a TCO or ITO transparent conductive film layer on the second PIN film layer;

所述中空聚酰亚胺纤维清洗利用超声波清洗并干燥处理；The hollow polyimide fiber is cleaned by ultrasonic cleaning and dried;

所述中空聚酰亚胺纤维表面镀铝膜层采用测控溅射技术，在中空聚酰亚胺纤维1的外表面镀一层铝膜层2而作为负电极，铝膜层厚度为300~400nm，镀膜温度为200~300℃；The aluminum coating layer on the surface of the hollow polyimide fiber adopts measurement and control sputtering technology, and an aluminum film layer 2 is coated on the outer surface of the hollow polyimide fiber 1 as a negative electrode, and the thickness of the aluminum film layer is 300~400nm , the coating temperature is 200~300℃;

所述第一PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在镀铝膜层上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第一PIN膜层3的制备；The preparation of the first PIN film layer is to adopt six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the aluminum-coated film layer, the power excitation frequency is 13.56MHz, and the film thickness is 50~100nm; Prepare an I-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 300-400nm; then, prepare a P-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 50-100nm to complete the first PIN film layer 3 preparation;

所述第二PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在第一PIN膜层的P型非晶硅薄膜上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第二PIN膜层4的制备；The preparation of the second PIN film layer is to use six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the P-type amorphous silicon film of the first PIN film layer, and the power excitation frequency is 13.56MHz. The thickness of the film is 50~100nm; then prepare an I-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 300~400nm; then, prepare a P-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 50~ 100nm, complete the preparation of the second PIN film layer 4;

所述TCO或ITO透明导电膜层的制备是采用磁控溅射镀膜技术，在第二PIN膜层的P型非晶硅薄膜上制备TCO或ITO透明导电薄膜5并引出正电极。The TCO or ITO transparent conductive film layer is prepared by magnetron sputtering coating technology, and the TCO or ITO transparent conductive film 5 is prepared on the P-type amorphous silicon film of the second PIN film layer and a positive electrode is drawn out.

本发明，按上述方法制造单元纤维太阳能微电池，再把所有单元纤维太阳能微电池并联或/和串联连接起来而形成太阳能微电池。In the present invention, the unit fiber solar micro-batteries are manufactured according to the above method, and then all the unit fiber solar micro-batteries are connected in parallel or/and in series to form a solar micro-battery.

Claims (2)

1.一种中空聚酰亚胺纤维太阳能微电池的制造方法，按以下工艺步骤进行：中空聚酰亚胺纤维清洗→中空聚酰亚胺纤维表面镀铝膜层→在镀铝膜层上制备第一PIN膜层→在第一PIN膜层上制备第二PIN膜层→在第二PIN膜层上制备TCO或ITO透明导电膜层；1. A method for manufacturing a hollow polyimide fiber solar energy micro-battery is carried out according to the following process steps: hollow polyimide fiber cleaning → hollow polyimide fiber surface aluminized film layer → preparation on the aluminized film layer The first PIN film layer → prepare the second PIN film layer on the first PIN film layer → prepare a TCO or ITO transparent conductive film layer on the second PIN film layer; 所述中空聚酰亚胺纤维清洗利用超声波清洗并干燥处理；The hollow polyimide fiber is cleaned by ultrasonic cleaning and dried; 所述中空聚酰亚胺纤维表面镀铝膜层采用测控溅射技术，在中空聚酰亚胺纤维外表面镀一层铝膜层而作为负电极，铝膜层厚度为300~400nm，镀膜温度为200~300℃；The aluminum coating layer on the surface of the hollow polyimide fiber adopts measurement and control sputtering technology, and a layer of aluminum film layer is coated on the outer surface of the hollow polyimide fiber as a negative electrode. The thickness of the aluminum film layer is 300~400nm, and the coating temperature 200~300℃; 所述第一PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在镀铝膜层上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第一PIN膜层的制备；The preparation of the first PIN film layer is to adopt six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the aluminum-coated film layer, the power excitation frequency is 13.56MHz, and the film thickness is 50~100nm; Prepare an I-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 300-400nm; then, prepare a P-type amorphous silicon film with a power excitation frequency of 60MHz and a film thickness of 50-100nm to complete the first PIN film layer preparation of 所述第二PIN膜层的制备是采用六室连续VHF~PECVD镀膜设备，先在第一PIN膜层的P型非晶硅薄膜上制备N型非晶硅薄膜，电源激发频率为13.56MHz，薄膜厚度为50~100nm；再制备I型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为300~400nm；然后，制备P型非晶硅薄膜，电源激发频率为60MHz，薄膜厚度为50~100nm，完成第二PIN膜层的制备；The preparation of the second PIN film layer is to use six-chamber continuous VHF~PECVD film coating equipment, first prepare an N-type amorphous silicon film on the P-type amorphous silicon film of the first PIN film layer, and the power excitation frequency is 13.56MHz. The thickness of the film is 50~100nm; then prepare an I-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 300~400nm; then, prepare a P-type amorphous silicon film, the power excitation frequency is 60MHz, and the film thickness is 50~ 100nm, complete the preparation of the second PIN film layer; 所述TCO或ITO透明导电膜层的制备是采用磁控溅射镀膜技术，在第二PIN膜层的P型非晶硅薄膜上制备TCO或ITO透明导电薄膜并引出正电极。The TCO or ITO transparent conductive film layer is prepared by magnetron sputtering coating technology, and the TCO or ITO transparent conductive film is prepared on the P-type amorphous silicon film of the second PIN film layer and a positive electrode is drawn out. 2.一种中空聚酰亚胺纤维太阳能微电池，其特征在于由权利要求1方法所制造。2. A hollow polyimide fiber solar cell, characterized in that it is manufactured by the method of claim 1.
CN201710269490.9A 2017-04-24 2017-04-24 A kind of hollow polyimide fiber solar micro battery and its manufacture method Pending CN107123700A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710269490.9A CN107123700A (en) 2017-04-24 2017-04-24 A kind of hollow polyimide fiber solar micro battery and its manufacture method
PCT/CN2017/000331 WO2018195675A1 (en) 2017-04-24 2017-04-28 Hollow polyimide fiber solar micro-battery and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710269490.9A CN107123700A (en) 2017-04-24 2017-04-24 A kind of hollow polyimide fiber solar micro battery and its manufacture method

Publications (1)

Publication Number Publication Date
CN107123700A true CN107123700A (en) 2017-09-01

Family

ID=59724982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710269490.9A Pending CN107123700A (en) 2017-04-24 2017-04-24 A kind of hollow polyimide fiber solar micro battery and its manufacture method

Country Status (2)

Country Link
CN (1) CN107123700A (en)
WO (1) WO2018195675A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101517740A (en) * 2006-03-18 2009-08-26 索林塔有限公司 Monolithic integrated circuit for non-planar solar cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19909417A1 (en) * 1999-03-04 2000-11-16 Manfred Baumgaertner Solar collector made of fibers
US6706963B2 (en) * 2002-01-25 2004-03-16 Konarka Technologies, Inc. Photovoltaic cell interconnection
CN101431128B (en) * 2008-12-02 2010-06-09 华中科技大学 A kind of preparation method of amorphous silicon laminated solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101517740A (en) * 2006-03-18 2009-08-26 索林塔有限公司 Monolithic integrated circuit for non-planar solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘荣厚: "《新能源工程》", 31 October 2006, 中国农业出版社 *

Also Published As

Publication number Publication date
WO2018195675A1 (en) 2018-11-01

Similar Documents

Publication Publication Date Title
CN106129251B (en) Structure and preparation method of a flexible perovskite battery
CN107946405B (en) A kind of manufacturing method of passivated contact solar cell
CN109888110B (en) Preparation method of laminated perovskite solar cell
US20140308773A1 (en) Method of fabricating heterojunction battery
CN104319349A (en) Perovskite type solar cell with sputtering ZnO as electron transfer layer and preparation
CN105070843A (en) A kind of perovskite solar cell and preparation method thereof
CN104576788A (en) Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof
CN105932075B (en) One kind back of the body crystalline silicon heterojunction solar cell and preparation method thereof
CN104835872A (en) Flexible heterojunction film solar cell and preparation method thereof
CN107217232A (en) A kind of method for improving zinc oxide transparent conductive film chemical stability
CN107681053A (en) A kind of preparation method of bonding self-encapsulating perovskite battery
CN107394043A (en) A kind of flexible optoelectronic conversion equipment and preparation method thereof
CN104425651B (en) A low-temperature process for preparing heterojunction solar cells with no grid on the front
CN105336807A (en) Heterojunction solar cell and preparation method thereof and solar cell module
CN104733567A (en) Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery
CN112614942B (en) PEG-modified carbon electrode, preparation method thereof and perovskite battery prepared by using PEG-modified carbon electrode
CN107123700A (en) A kind of hollow polyimide fiber solar micro battery and its manufacture method
CN103441190B (en) PN junction manufacture method in a kind of solar cell
CN105845829B (en) A perovskite solar cell
CN104409528B (en) Electrode and application before the HAZO/AZO composite transparent conductions that a kind of wide spectrum characteristic improves
CN203932119U (en) Graphene electrodes fexible film perovskite solar cell
CN106449814A (en) Two-sided passivating heterojunction solar battery and preparation method thereof
CN104576802A (en) Composite battery based on silicon thin films and silicon nanowire heterojunction and preparation method of composite battery
CN103972321B (en) Fibrous silicon-based thin-film solar cell and preparation method thereof
CN104393060B (en) Hidden crack-preventing photovoltaic module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 515500 Guangdong city of Jieyang Province East Jie Industrial Park of West (affiliated building first floor)

Applicant after: Guangdong Meng hi tech fiber Limited by Share Ltd

Address before: 515500 Guangdong city of Jieyang Province East Jie Industrial Park of West (affiliated building first floor)

Applicant before: Guangdong Mengtai Textile Fiber Co., Ltd.

CB02 Change of applicant information
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170901

WD01 Invention patent application deemed withdrawn after publication