CN1092558A - 一种击穿电压高的薄有源层半导体器件 - Google Patents

一种击穿电压高的薄有源层半导体器件 Download PDF

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Publication number
CN1092558A
CN1092558A CN94100698.0A CN94100698A CN1092558A CN 1092558 A CN1092558 A CN 1092558A CN 94100698 A CN94100698 A CN 94100698A CN 1092558 A CN1092558 A CN 1092558A
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CN
China
Prior art keywords
region
transistor
base
layer
semiconductor
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Pending
Application number
CN94100698.0A
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English (en)
Chinese (zh)
Inventor
A·李特温
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
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Telefonaktiebolaget LM Ericsson AB
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Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of CN1092558A publication Critical patent/CN1092558A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

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  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CN94100698.0A 1993-01-25 1994-01-25 一种击穿电压高的薄有源层半导体器件 Pending CN1092558A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9300210 1993-01-25
SE9300210A SE500814C2 (sv) 1993-01-25 1993-01-25 Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
US08/669,848 US5659190A (en) 1993-01-25 1996-06-26 Semiconductor device in a thin active layer with high breakdown voltage

Publications (1)

Publication Number Publication Date
CN1092558A true CN1092558A (zh) 1994-09-21

Family

ID=26661632

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94100698.0A Pending CN1092558A (zh) 1993-01-25 1994-01-25 一种击穿电压高的薄有源层半导体器件

Country Status (5)

Country Link
US (1) US5659190A (fr)
EP (1) EP0623951B1 (fr)
JP (1) JPH06349849A (fr)
CN (1) CN1092558A (fr)
SE (1) SE500814C2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101467261B (zh) * 2006-06-12 2011-01-26 苏沃塔公司 用于小线宽和下降的线宽的jfet的可扩展工艺和结构

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283414A (ja) * 1994-04-05 1995-10-27 Toshiba Corp Ｍｏｓ型半導体装置
DE4418206C2 (de) * 1994-05-25 1999-01-14 Siemens Ag CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
US6043555A (en) * 1995-04-13 2000-03-28 Telefonaktiebolget Lm Ericsson Bipolar silicon-on-insulator transistor with increased breakdown voltage
US5852559A (en) * 1996-09-24 1998-12-22 Allen Bradley Company, Llc Power application circuits utilizing bidirectional insulated gate bipolar transistor
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
DE19800715A1 (de) * 1998-01-12 1999-07-15 Bremicker Auto Elektrik Elektrisches Halbleiterelement sowie Verfahren zur Herstellung eines Halbleiterelementes
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6291304B1 (en) 1999-09-15 2001-09-18 Taiwan Semiconductor Manufacturing Company Method of fabricating a high voltage transistor using P+ buried layer
US6245609B1 (en) 1999-09-27 2001-06-12 Taiwan Semiconductor Manufacturing Company High voltage transistor using P+ buried layer
EP2058854B1 (fr) * 2007-11-07 2014-12-03 Acreo Swedish ICT AB Dispositif semi-conducteur
JP6459416B2 (ja) * 2014-11-12 2019-01-30 富士電機株式会社 半導体装置
US9935628B2 (en) 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
GB201604796D0 (en) 2015-11-10 2016-05-04 Analog Devices Global A combined isolator and power switch
US9698594B2 (en) 2015-11-10 2017-07-04 Analog Devices Global Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
TWI747235B (zh) * 2020-04-16 2021-11-21 世界先進積體電路股份有限公司 高壓半導體裝置
US11121212B1 (en) 2020-05-28 2021-09-14 Vanguard International Semiconductor Corporation High-voltage semiconductor device
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件

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US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
CA1131801A (fr) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconducteur
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
US4868624A (en) * 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
NL8200464A (nl) * 1982-02-08 1983-09-01 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
JP2825322B2 (ja) * 1989-09-13 1998-11-18 株式会社東芝 誘電体分離構造を有する半導体基板の製造方法
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101467261B (zh) * 2006-06-12 2011-01-26 苏沃塔公司 用于小线宽和下降的线宽的jfet的可扩展工艺和结构

Also Published As

Publication number Publication date
EP0623951B1 (fr) 1998-07-08
EP0623951A1 (fr) 1994-11-09
SE500814C2 (sv) 1994-09-12
US5659190A (en) 1997-08-19
SE9300210L (sv) 1994-07-26
JPH06349849A (ja) 1994-12-22
SE9300210D0 (sv) 1993-01-25

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