CN110246760B - 蚀刻方法 - Google Patents

蚀刻方法 Download PDF

Info

Publication number
CN110246760B
CN110246760B CN201910508471.6A CN201910508471A CN110246760B CN 110246760 B CN110246760 B CN 110246760B CN 201910508471 A CN201910508471 A CN 201910508471A CN 110246760 B CN110246760 B CN 110246760B
Authority
CN
China
Prior art keywords
etching
film
lower electrode
layer film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910508471.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN110246760A (zh
Inventor
富永翔
高山航
五十岚義树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN110246760A publication Critical patent/CN110246760A/zh
Application granted granted Critical
Publication of CN110246760B publication Critical patent/CN110246760B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN201910508471.6A 2015-04-22 2016-04-21 蚀刻方法 Active CN110246760B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-087900 2015-04-22
JP2015087900A JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法
CN201610252496.0A CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610252496.0A Division CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

Publications (2)

Publication Number Publication Date
CN110246760A CN110246760A (zh) 2019-09-17
CN110246760B true CN110246760B (zh) 2023-02-17

Family

ID=55806203

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910508471.6A Active CN110246760B (zh) 2015-04-22 2016-04-21 蚀刻方法
CN201610252496.0A Expired - Fee Related CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610252496.0A Expired - Fee Related CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

Country Status (5)

Country Link
US (1) US9666446B2 (2)
EP (2) EP3086359B1 (2)
JP (1) JP6498022B2 (2)
KR (1) KR102035890B1 (2)
CN (2) CN110246760B (2)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
US9997374B2 (en) 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6385915B2 (ja) * 2015-12-22 2018-09-05 東京エレクトロン株式会社 エッチング方法
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
KR102356741B1 (ko) 2017-05-31 2022-01-28 삼성전자주식회사 절연층들을 갖는 반도체 소자 및 그 제조 방법
CN110998790B (zh) * 2017-08-04 2024-07-09 朗姆研究公司 在水平表面上的选择性沉积SiN
JP6945388B2 (ja) * 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10847374B2 (en) * 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
JP7158252B2 (ja) * 2018-02-15 2022-10-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP7018801B2 (ja) 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7325224B2 (ja) 2018-06-04 2023-08-14 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
US11270889B2 (en) 2018-06-04 2022-03-08 Tokyo Electron Limited Etching method and etching apparatus
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102554014B1 (ko) * 2018-06-15 2023-07-11 삼성전자주식회사 저온 식각 방법 및 플라즈마 식각 장치
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US10720334B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7190940B2 (ja) 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
KR102611810B1 (ko) * 2019-06-28 2023-12-07 양쯔 메모리 테크놀로지스 씨오., 엘티디. 반도체 디바이스 제조의 방법들
JP7372073B2 (ja) 2019-08-02 2023-10-31 東京エレクトロン株式会社 基板処理方法、基板処理装置及びクリーニング装置
JP7390134B2 (ja) * 2019-08-28 2023-12-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
CN114342043A (zh) 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
WO2021090516A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
CN112786441B (zh) * 2019-11-08 2026-01-23 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
JP2021174872A (ja) 2020-04-24 2021-11-01 東京エレクトロン株式会社 配管システム及び処理装置
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7595431B2 (ja) 2020-07-21 2024-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
TWI895472B (zh) * 2020-08-17 2025-09-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
JP7534046B2 (ja) 2020-08-19 2024-08-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7565763B2 (ja) * 2020-11-17 2024-10-11 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7638700B2 (ja) 2020-12-24 2025-03-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP7837163B2 (ja) * 2021-12-03 2026-03-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR20250009543A (ko) * 2022-05-19 2025-01-17 램 리써치 코포레이션 극저온 및 상승된 온도에서의 고 종횡비 유전체 에칭을 위한 하드마스크
US20250118568A1 (en) * 2022-06-02 2025-04-10 Lam Research Corporation Reduced temperature etching of doped silicon oxide
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
JP7756056B2 (ja) * 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US20250022714A1 (en) * 2023-07-13 2025-01-16 Applied Materials, Inc. Cyclic etch of silicon oxide and silicon nitride

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115231A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 平行平板形ドライエッチング装置
JPH05160077A (ja) * 1991-12-05 1993-06-25 Sharp Corp プラズマエッチング方法
CN101093796A (zh) * 2002-06-27 2007-12-26 东京毅力科创株式会社 等离子体处理方法
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质
CN102683196A (zh) * 2011-03-14 2012-09-19 东京毅力科创株式会社 蚀刻方法、蚀刻装置及计算机可读存储介质
CN104347521A (zh) * 2013-07-31 2015-02-11 东京毅力科创株式会社 半导体器件的制造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772346A (en) 1980-10-24 1982-05-06 Toshiba Corp Manufacture of semiconductor device
JPH07104927B2 (ja) 1985-08-30 1995-11-13 キヤノン株式会社 画像処理装置
US5279705A (en) * 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
JP3179872B2 (ja) * 1991-12-19 2001-06-25 東京エレクトロン株式会社 エッチング方法
JPH0722393A (ja) 1993-06-23 1995-01-24 Toshiba Corp ドライエッチング装置及びドライエッチング方法
JPH0722149A (ja) 1993-06-28 1995-01-24 Yazaki Corp 電線の接続装置及び接続方法
JP2956524B2 (ja) 1995-04-24 1999-10-04 日本電気株式会社 エッチング方法
JP3524763B2 (ja) * 1998-05-12 2004-05-10 株式会社日立製作所 エッチング方法
CN101667536B (zh) * 2001-08-31 2012-07-04 东京毅力科创株式会社 被处理体的蚀刻方法
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
WO2013118660A1 (ja) * 2012-02-09 2013-08-15 東京エレクトロン株式会社 半導体製造装置の製造方法及び半導体製造装置
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5878091B2 (ja) * 2012-07-20 2016-03-08 東京エレクトロン株式会社 エッチング方法
JP6154820B2 (ja) * 2012-11-01 2017-06-28 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6140575B2 (ja) * 2013-08-26 2017-05-31 東京エレクトロン株式会社 半導体装置の製造方法
JP6423643B2 (ja) * 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
US9728422B2 (en) * 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
US9613824B2 (en) * 2015-05-14 2017-04-04 Tokyo Electron Limited Etching method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115231A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 平行平板形ドライエッチング装置
JPH05160077A (ja) * 1991-12-05 1993-06-25 Sharp Corp プラズマエッチング方法
CN101093796A (zh) * 2002-06-27 2007-12-26 东京毅力科创株式会社 等离子体处理方法
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质
CN102683196A (zh) * 2011-03-14 2012-09-19 东京毅力科创株式会社 蚀刻方法、蚀刻装置及计算机可读存储介质
CN104347521A (zh) * 2013-07-31 2015-02-11 东京毅力科创株式会社 半导体器件的制造方法

Also Published As

Publication number Publication date
US9666446B2 (en) 2017-05-30
US20160314986A1 (en) 2016-10-27
CN106067418A (zh) 2016-11-02
CN106067418B (zh) 2019-07-05
JP2016207840A (ja) 2016-12-08
EP3086359A1 (en) 2016-10-26
EP3621102A1 (en) 2020-03-11
CN110246760A (zh) 2019-09-17
KR20160125896A (ko) 2016-11-01
EP3086359B1 (en) 2019-09-11
JP6498022B2 (ja) 2019-04-10
KR102035890B1 (ko) 2019-10-23

Similar Documents

Publication Publication Date Title
CN110246760B (zh) 蚀刻方法
JP6604911B2 (ja) エッチング処理方法
US12154792B2 (en) Plasma etching method
TWI710021B (zh) 蝕刻處理方法
US10707090B2 (en) Plasma etching method
US10600654B2 (en) Etching process method
KR20210042939A (ko) 전자빔 매개 플라즈마 에칭 및 증착 공정을 위한 장치 및 공정
TWI703414B (zh) 蝕刻方法
JP2017098323A (ja) プラズマエッチング方法
CN106952798A (zh) 蚀刻方法
JP2016213427A (ja) エッチング方法及びエッチング装置
JP6871550B2 (ja) エッチング装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant