CN111816559B - 用于tsv/mems/功率器件蚀刻的化学物质 - Google Patents
用于tsv/mems/功率器件蚀刻的化学物质 Download PDFInfo
- Publication number
- CN111816559B CN111816559B CN202010698443.8A CN202010698443A CN111816559B CN 111816559 B CN111816559 B CN 111816559B CN 202010698443 A CN202010698443 A CN 202010698443A CN 111816559 B CN111816559 B CN 111816559B
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- Prior art keywords
- etching
- silicon
- fluid
- hydrogen
- polymer deposition
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
- H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
- H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010698443.8A CN111816559B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462013959P | 2014-06-18 | 2014-06-18 | |
| US62/013,959 | 2014-06-18 | ||
| CN202010698443.8A CN111816559B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
| PCT/JP2015/003044 WO2015194178A1 (en) | 2014-06-18 | 2015-06-17 | Chemistries for tsv/mems/power device etching |
| CN201580031726.4A CN106663624B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580031726.4A Division CN106663624B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111816559A CN111816559A (zh) | 2020-10-23 |
| CN111816559B true CN111816559B (zh) | 2024-06-11 |
Family
ID=54935182
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580031726.4A Active CN106663624B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
| CN202010698443.8A Active CN111816559B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580031726.4A Active CN106663624B (zh) | 2014-06-18 | 2015-06-17 | 用于tsv/mems/功率器件蚀刻的化学物质 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US9892932B2 (2) |
| EP (1) | EP3158579A4 (2) |
| JP (1) | JP6485972B2 (2) |
| KR (3) | KR102539241B1 (2) |
| CN (2) | CN106663624B (2) |
| SG (1) | SG11201610342YA (2) |
| TW (3) | TWI658509B (2) |
| WO (1) | WO2015194178A1 (2) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| KR102652512B1 (ko) | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정 |
| JP6587580B2 (ja) * | 2016-06-10 | 2019-10-09 | 東京エレクトロン株式会社 | エッチング処理方法 |
| EP3608945A4 (en) * | 2017-04-06 | 2020-12-23 | Kanto Denka Kogyo Co., Ltd. | COMPOSITION OF DRY ENGRAVING GAS AND DRY ENGRAVING PROCESS |
| WO2018226501A1 (en) * | 2017-06-08 | 2018-12-13 | Tokyo Electron Limited | Method of plasma etching of silicon-containing organic film using sulfur-based chemistry |
| TWI757545B (zh) * | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10607999B2 (en) * | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| JP7145031B2 (ja) | 2017-12-25 | 2022-09-30 | 東京エレクトロン株式会社 | 基板を処理する方法、プラズマ処理装置、及び基板処理装置 |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| CN110010464B (zh) * | 2017-12-25 | 2023-07-14 | 东京毅力科创株式会社 | 处理基板的方法 |
| CN118588548A (zh) * | 2018-03-16 | 2024-09-03 | 朗姆研究公司 | 在电介质中的高深宽比特征的等离子体蚀刻化学过程 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| JP6959999B2 (ja) * | 2019-04-19 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
| CN112786441B (zh) | 2019-11-08 | 2026-01-23 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| KR102723916B1 (ko) * | 2019-11-08 | 2024-10-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| WO2021090516A1 (ja) | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102389081B1 (ko) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법 |
| KR102388963B1 (ko) * | 2020-05-07 | 2022-04-20 | 아주대학교산학협력단 | 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| KR20230079304A (ko) * | 2020-10-05 | 2023-06-07 | 에스피피 테크놀로지스 컴퍼니 리미티드 | 플라스마 처리용 가스, 플라스마 처리 방법 및 플라스마 처리 장치 |
| KR102924126B1 (ko) * | 2020-10-15 | 2026-02-06 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
| KR102924118B1 (ko) * | 2020-10-15 | 2026-02-09 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
| CN116325088A (zh) * | 2020-10-15 | 2023-06-23 | 株式会社力森诺科 | 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法 |
| JPWO2022080275A1 (2) * | 2020-10-15 | 2022-04-21 | ||
| CN116472258A (zh) * | 2020-10-15 | 2023-07-21 | 株式会社力森诺科 | 氟-2-丁烯的保存方法 |
| WO2022210043A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7700221B2 (ja) * | 2021-05-07 | 2025-06-30 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| WO2022234643A1 (ja) | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| TWI906294B (zh) * | 2021-05-07 | 2025-12-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及蝕刻裝置 |
| WO2025182815A1 (ja) * | 2024-02-27 | 2025-09-04 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| TW202548079A (zh) | 2024-03-01 | 2025-12-16 | 日商大金工業股份有限公司 | 沉積氣體 |
| WO2025258395A1 (ja) * | 2024-06-11 | 2025-12-18 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| CN121398476B (zh) * | 2025-12-24 | 2026-04-03 | 西湖大学 | 一种原位自清洁的氧化钨刻蚀方法、半导体结构及芯片 |
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| JPH03154337A (ja) * | 1989-11-13 | 1991-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
| US6074959A (en) * | 1997-09-19 | 2000-06-13 | Applied Materials, Inc. | Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide |
| CN1802730A (zh) * | 2003-04-09 | 2006-07-12 | 兰姆研究有限公司 | 用于利用气体化学剂周期调制的等离子体蚀刻的方法 |
| CN101017817A (zh) * | 2006-02-10 | 2007-08-15 | 旺宏电子股份有限公司 | 具有紫外线防护及断裂保护功能的钝化层 |
| CN101071775A (zh) * | 2007-05-18 | 2007-11-14 | 西安交通大学 | 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法 |
| JP2008270348A (ja) * | 2007-04-17 | 2008-11-06 | Seiko Epson Corp | ドライエッチング装置及び被加工物の加工方法 |
| JP2009206444A (ja) * | 2008-02-29 | 2009-09-10 | Nippon Zeon Co Ltd | プラズマエッチング方法 |
| CN102341444A (zh) * | 2009-03-06 | 2012-02-01 | 苏威氟有限公司 | 不饱和氢氟烃的用途 |
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2015
- 2015-06-12 TW TW104119063A patent/TWI658509B/zh active
- 2015-06-12 TW TW109114840A patent/TWI733431B/zh active
- 2015-06-12 TW TW108109359A patent/TWI695423B/zh active
- 2015-06-17 KR KR1020227030041A patent/KR102539241B1/ko active Active
- 2015-06-17 KR KR1020177000840A patent/KR102444697B1/ko active Active
- 2015-06-17 JP JP2016571169A patent/JP6485972B2/ja active Active
- 2015-06-17 EP EP15808907.8A patent/EP3158579A4/en not_active Withdrawn
- 2015-06-17 CN CN201580031726.4A patent/CN106663624B/zh active Active
- 2015-06-17 KR KR1020237017666A patent/KR102679289B1/ko active Active
- 2015-06-17 CN CN202010698443.8A patent/CN111816559B/zh active Active
- 2015-06-17 WO PCT/JP2015/003044 patent/WO2015194178A1/en not_active Ceased
- 2015-06-17 US US15/316,932 patent/US9892932B2/en active Active
- 2015-06-17 SG SG11201610342YA patent/SG11201610342YA/en unknown
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2017
- 2017-09-08 US US15/699,668 patent/US10103031B2/en active Active
-
2018
- 2018-08-28 US US16/114,371 patent/US10720335B2/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH03154337A (ja) * | 1989-11-13 | 1991-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
| US6074959A (en) * | 1997-09-19 | 2000-06-13 | Applied Materials, Inc. | Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide |
| CN1802730A (zh) * | 2003-04-09 | 2006-07-12 | 兰姆研究有限公司 | 用于利用气体化学剂周期调制的等离子体蚀刻的方法 |
| CN101017817A (zh) * | 2006-02-10 | 2007-08-15 | 旺宏电子股份有限公司 | 具有紫外线防护及断裂保护功能的钝化层 |
| JP2008270348A (ja) * | 2007-04-17 | 2008-11-06 | Seiko Epson Corp | ドライエッチング装置及び被加工物の加工方法 |
| CN101071775A (zh) * | 2007-05-18 | 2007-11-14 | 西安交通大学 | 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法 |
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| CN103718277A (zh) * | 2011-07-27 | 2014-04-09 | 中央硝子株式会社 | 干蚀刻剂 |
| CN103843117A (zh) * | 2011-10-07 | 2014-06-04 | 应用材料公司 | 通过介稳氢终止的硅的选择性蚀刻 |
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| SG11201610342YA (en) | 2017-01-27 |
| CN106663624A (zh) | 2017-05-10 |
| EP3158579A1 (en) | 2017-04-26 |
| KR102539241B1 (ko) | 2023-06-01 |
| KR102679289B1 (ko) | 2024-06-27 |
| TWI695423B (zh) | 2020-06-01 |
| JP6485972B2 (ja) | 2019-03-20 |
| KR102444697B1 (ko) | 2022-09-16 |
| US10720335B2 (en) | 2020-07-21 |
| TW201606867A (zh) | 2016-02-16 |
| KR20170020434A (ko) | 2017-02-22 |
| US20180366336A1 (en) | 2018-12-20 |
| KR20220124825A (ko) | 2022-09-14 |
| US20180076046A1 (en) | 2018-03-15 |
| TW202030312A (zh) | 2020-08-16 |
| CN106663624B (zh) | 2020-08-14 |
| CN111816559A (zh) | 2020-10-23 |
| EP3158579A4 (en) | 2018-02-21 |
| US20170103901A1 (en) | 2017-04-13 |
| TW201929071A (zh) | 2019-07-16 |
| US9892932B2 (en) | 2018-02-13 |
| JP2017518645A (ja) | 2017-07-06 |
| WO2015194178A1 (en) | 2015-12-23 |
| KR20230079491A (ko) | 2023-06-07 |
| TWI733431B (zh) | 2021-07-11 |
| TWI658509B (zh) | 2019-05-01 |
| US10103031B2 (en) | 2018-10-16 |
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