CN112992964B - 发光二极管结构及其制造方法 - Google Patents

发光二极管结构及其制造方法 Download PDF

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CN112992964B
CN112992964B CN202110317555.9A CN202110317555A CN112992964B CN 112992964 B CN112992964 B CN 112992964B CN 202110317555 A CN202110317555 A CN 202110317555A CN 112992964 B CN112992964 B CN 112992964B
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semiconductor layer
layer
led
led unit
doped
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CN112992964A (zh
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庄永漳
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Laiyu Optoelectronic Technology Suzhou Co ltd
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Laiyu Optoelectronic Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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CN202110317555.9A 2020-04-09 2021-03-25 发光二极管结构及其制造方法 Active CN112992964B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063007829P 2020-04-09 2020-04-09
US63/007,829 2020-04-09
US17/162,515 US12224304B2 (en) 2020-04-09 2021-01-29 Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same
US17/162,515 2021-01-29

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CN112992964A CN112992964A (zh) 2021-06-18
CN112992964B true CN112992964B (zh) 2023-07-07

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EP (1) EP4133536A4 (fr)
JP (2) JP2023525439A (fr)
KR (1) KR102911671B1 (fr)
CN (1) CN112992964B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114023861A (zh) * 2021-11-01 2022-02-08 镭昱光电科技(苏州)有限公司 Micro-LED芯片结构及其制作方法
CN114497333B (zh) * 2021-12-21 2024-12-17 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114784034B (zh) * 2022-02-24 2026-03-20 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114566515B (zh) * 2022-02-28 2025-09-12 镭昱光电科技(苏州)有限公司 微型发光二极管显示芯片及其制备方法
CN114628563B (zh) * 2022-05-12 2022-09-09 镭昱光电科技(苏州)有限公司 Micro LED显示芯片及其制备方法
CN114759130B (zh) * 2022-06-15 2022-09-02 镭昱光电科技(苏州)有限公司 一种Micro-LED显示芯片及其制备方法
CN115472641B (zh) 2022-11-01 2023-03-24 镭昱光电科技(苏州)有限公司 一种微显示芯片及其制备方法
CN115498089B (zh) * 2022-11-16 2023-02-17 镭昱光电科技(苏州)有限公司 微显示器件及制备方法
WO2024130132A1 (fr) * 2022-12-16 2024-06-20 Lumileds Llc Dispositif modulaire pour réseaux de diodes électroluminescentes adressables
WO2025091231A1 (fr) * 2023-10-31 2025-05-08 Jade Bird Display (shanghai) Limited Couche de réseau de micro-del et panneau d'affichage à micro-del
WO2025243570A1 (fr) * 2024-05-23 2025-11-27 日亜化学工業株式会社 Procédé de fabrication d'élément électroluminescent et élément électroluminescent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039041A (ja) * 2003-07-14 2005-02-10 Sanyo Electric Co Ltd 発光素子アレイ及び光プリントヘッド
WO2014017427A1 (fr) * 2012-07-27 2014-01-30 株式会社ブイ・テクノロジー Dispositif électroluminescent semi-conducteur

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4916120B2 (ja) 2005-03-24 2012-04-11 株式会社沖データ 半導体複合装置、半導体複合装置の製造方法、ｌｅｄヘッド、及び画像形成装置
KR100867541B1 (ko) * 2006-11-14 2008-11-06 삼성전기주식회사 수직형 발광 소자의 제조 방법
US8642363B2 (en) * 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
CN202332853U (zh) * 2011-10-19 2012-07-11 贵州大学 大功率倒装阵列led芯片
US9153548B2 (en) * 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
JP6097682B2 (ja) 2013-12-27 2017-03-15 株式会社沖データ 半導体発光素子、画像形成装置、画像表示装置、及び半導体発光素子の製造方法
WO2016122725A1 (fr) * 2015-01-30 2016-08-04 Technologies Llc Sxaymiq Micro-diode électroluminescente pourvue d'un miroir latéral métallique
KR102371327B1 (ko) * 2015-05-22 2022-03-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR102573587B1 (ko) * 2016-06-21 2023-09-01 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 표시 장치
CN109417082B (zh) * 2016-03-18 2023-08-01 Lg伊诺特有限公司 半导体器件以及包括半导体器件的显示装置
JP6815129B2 (ja) * 2016-08-26 2021-01-20 株式会社沖データ 半導体装置、光プリントヘッド、及び画像形成装置
CN106876406B (zh) * 2016-12-30 2023-08-08 上海君万微电子科技有限公司 基于iii-v族氮化物半导体的led全彩显示器件结构及制备方法
CN110709989B (zh) * 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
KR102422386B1 (ko) * 2017-04-21 2022-07-20 주식회사 루멘스 마이크로 led 디스플레이 장치 및 그 제조방법
TWI689092B (zh) * 2017-06-09 2020-03-21 美商晶典有限公司 具有透光基材之微發光二極體顯示模組及其製造方法
US10177178B1 (en) * 2017-07-05 2019-01-08 Gloablfoundries Inc. Assembly of CMOS driver wafer and LED wafer for microdisplay
JP7268972B2 (ja) * 2017-09-07 2023-05-08 キヤノン株式会社 発光サイリスタ、発光サイリスタアレイ、露光ヘッド、および画像形成装置
KR102456882B1 (ko) * 2017-11-24 2022-10-21 주식회사 루멘스 고효율 마이크로 엘이디 모듈의 제조방법
CN108598104A (zh) * 2018-06-25 2018-09-28 广东省半导体产业技术研究院 一种并联微led阵列及其制作方法
CN109713089A (zh) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 GaN基LED白光垂直结构芯片及其制备方法
CN109920814B (zh) * 2019-03-12 2022-10-04 京东方科技集团股份有限公司 显示基板及制造方法、显示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039041A (ja) * 2003-07-14 2005-02-10 Sanyo Electric Co Ltd 発光素子アレイ及び光プリントヘッド
WO2014017427A1 (fr) * 2012-07-27 2014-01-30 株式会社ブイ・テクノロジー Dispositif électroluminescent semi-conducteur

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Publication number Publication date
KR102911671B1 (ko) 2026-01-14
KR20220139993A (ko) 2022-10-17
EP4133536A4 (fr) 2024-05-08
JP2023525439A (ja) 2023-06-16
JP7733147B2 (ja) 2025-09-02
JP2024059811A (ja) 2024-05-01
CN112992964A (zh) 2021-06-18
EP4133536A1 (fr) 2023-02-15

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