EP4133536A4 - Structure de diode électroluminescente et procédé de fabrication associé - Google Patents

Structure de diode électroluminescente et procédé de fabrication associé Download PDF

Info

Publication number
EP4133536A4
EP4133536A4 EP21784647.6A EP21784647A EP4133536A4 EP 4133536 A4 EP4133536 A4 EP 4133536A4 EP 21784647 A EP21784647 A EP 21784647A EP 4133536 A4 EP4133536 A4 EP 4133536A4
Authority
EP
European Patent Office
Prior art keywords
light
emitting diode
manufacturing methods
diode structure
methods therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21784647.6A
Other languages
German (de)
English (en)
Other versions
EP4133536A1 (fr
Inventor
Wing Cheung CHONG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raysolve Optoelectronics Suzhou Co Ltd
Original Assignee
Raysolve Optoelectronics Suzhou Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/162,515 external-priority patent/US12224304B2/en
Application filed by Raysolve Optoelectronics Suzhou Co Ltd filed Critical Raysolve Optoelectronics Suzhou Co Ltd
Publication of EP4133536A1 publication Critical patent/EP4133536A1/fr
Publication of EP4133536A4 publication Critical patent/EP4133536A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
EP21784647.6A 2020-04-09 2021-03-26 Structure de diode électroluminescente et procédé de fabrication associé Pending EP4133536A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063007829P 2020-04-09 2020-04-09
US17/162,515 US12224304B2 (en) 2020-04-09 2021-01-29 Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same
PCT/CN2021/083179 WO2021203987A1 (fr) 2020-04-09 2021-03-26 Structure de diode électroluminescente et procédé de fabrication associé

Publications (2)

Publication Number Publication Date
EP4133536A1 EP4133536A1 (fr) 2023-02-15
EP4133536A4 true EP4133536A4 (fr) 2024-05-08

Family

ID=76333624

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21784647.6A Pending EP4133536A4 (fr) 2020-04-09 2021-03-26 Structure de diode électroluminescente et procédé de fabrication associé

Country Status (4)

Country Link
EP (1) EP4133536A4 (fr)
JP (2) JP2023525439A (fr)
KR (1) KR102911671B1 (fr)
CN (1) CN112992964B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114023861A (zh) * 2021-11-01 2022-02-08 镭昱光电科技(苏州)有限公司 Micro-LED芯片结构及其制作方法
CN114497333B (zh) * 2021-12-21 2024-12-17 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114784034B (zh) * 2022-02-24 2026-03-20 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114566515B (zh) * 2022-02-28 2025-09-12 镭昱光电科技(苏州)有限公司 微型发光二极管显示芯片及其制备方法
CN114628563B (zh) * 2022-05-12 2022-09-09 镭昱光电科技(苏州)有限公司 Micro LED显示芯片及其制备方法
CN114759130B (zh) * 2022-06-15 2022-09-02 镭昱光电科技(苏州)有限公司 一种Micro-LED显示芯片及其制备方法
CN115472641B (zh) 2022-11-01 2023-03-24 镭昱光电科技(苏州)有限公司 一种微显示芯片及其制备方法
CN115498089B (zh) * 2022-11-16 2023-02-17 镭昱光电科技(苏州)有限公司 微显示器件及制备方法
WO2024130132A1 (fr) * 2022-12-16 2024-06-20 Lumileds Llc Dispositif modulaire pour réseaux de diodes électroluminescentes adressables
WO2025091231A1 (fr) * 2023-10-31 2025-05-08 Jade Bird Display (shanghai) Limited Couche de réseau de micro-del et panneau d'affichage à micro-del
WO2025243570A1 (fr) * 2024-05-23 2025-11-27 日亜化学工業株式会社 Procédé de fabrication d'élément électroluminescent et élément électroluminescent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287027A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US20190164947A1 (en) * 2017-11-24 2019-05-30 Lumens Co., Ltd. Method for fabricating high-efficiency micro-led module

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4020838B2 (ja) * 2003-07-14 2007-12-12 三洋電機株式会社 発光素子アレイ及び光プリントヘッド
JP4916120B2 (ja) 2005-03-24 2012-04-11 株式会社沖データ 半導体複合装置、半導体複合装置の製造方法、ｌｅｄヘッド、及び画像形成装置
KR100867541B1 (ko) * 2006-11-14 2008-11-06 삼성전기주식회사 수직형 발광 소자의 제조 방법
US8642363B2 (en) * 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
CN202332853U (zh) * 2011-10-19 2012-07-11 贵州大学 大功率倒装阵列led芯片
JP2015181138A (ja) * 2012-07-27 2015-10-15 株式会社ブイ・テクノロジー 半導体発光装置
US9153548B2 (en) * 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
JP6097682B2 (ja) 2013-12-27 2017-03-15 株式会社沖データ 半導体発光素子、画像形成装置、画像表示装置、及び半導体発光素子の製造方法
WO2016122725A1 (fr) * 2015-01-30 2016-08-04 Technologies Llc Sxaymiq Micro-diode électroluminescente pourvue d'un miroir latéral métallique
KR102371327B1 (ko) * 2015-05-22 2022-03-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR102573587B1 (ko) * 2016-06-21 2023-09-01 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 표시 장치
CN109417082B (zh) * 2016-03-18 2023-08-01 Lg伊诺特有限公司 半导体器件以及包括半导体器件的显示装置
JP6815129B2 (ja) * 2016-08-26 2021-01-20 株式会社沖データ 半導体装置、光プリントヘッド、及び画像形成装置
CN106876406B (zh) * 2016-12-30 2023-08-08 上海君万微电子科技有限公司 基于iii-v族氮化物半导体的led全彩显示器件结构及制备方法
KR102422386B1 (ko) * 2017-04-21 2022-07-20 주식회사 루멘스 마이크로 led 디스플레이 장치 및 그 제조방법
TWI689092B (zh) * 2017-06-09 2020-03-21 美商晶典有限公司 具有透光基材之微發光二極體顯示模組及其製造方法
US10177178B1 (en) * 2017-07-05 2019-01-08 Gloablfoundries Inc. Assembly of CMOS driver wafer and LED wafer for microdisplay
JP7268972B2 (ja) * 2017-09-07 2023-05-08 キヤノン株式会社 発光サイリスタ、発光サイリスタアレイ、露光ヘッド、および画像形成装置
CN108598104A (zh) * 2018-06-25 2018-09-28 广东省半导体产业技术研究院 一种并联微led阵列及其制作方法
CN109713089A (zh) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 GaN基LED白光垂直结构芯片及其制备方法
CN109920814B (zh) * 2019-03-12 2022-10-04 京东方科技集团股份有限公司 显示基板及制造方法、显示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287027A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US20190164947A1 (en) * 2017-11-24 2019-05-30 Lumens Co., Ltd. Method for fabricating high-efficiency micro-led module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2021203987A1 *

Also Published As

Publication number Publication date
KR102911671B1 (ko) 2026-01-14
KR20220139993A (ko) 2022-10-17
JP2023525439A (ja) 2023-06-16
CN112992964B (zh) 2023-07-07
JP7733147B2 (ja) 2025-09-02
JP2024059811A (ja) 2024-05-01
CN112992964A (zh) 2021-06-18
EP4133536A1 (fr) 2023-02-15

Similar Documents

Publication Publication Date Title
EP4133536A4 (fr) Structure de diode électroluminescente et procédé de fabrication associé
EP4115453C0 (fr) Structure de diodes électroluminescentes à couleur entière et son procédé de fabrication
EP3989297C0 (fr) Del à ultraviolet profond ayant une structure de barrière finale à super-réseau et à l'épaisseur chirpée et procédé de préparation
EP2583317A4 (fr) Structure à diodes électroluminescentes de nanofils et procédé de fabrication associé
EP3925013C0 (fr) Dispositif à diodes électroluminescentes et son procédé de fabrication
EP2567145A4 (fr) Source de lumière à diodes électroluminescentes et son procédé de fabrication
EP4369886A4 (fr) Élément émetteur de lumière organique et son procédé de conception
EP4521567A4 (fr) Structure électroluminescente à semi-conducteur à émission latérale et son procédé de fabrication
EP3866211A4 (fr) Puce de diode électroluminescente et son procédé de fabrication
EP4131337A4 (fr) Substrat composite, et procédé de fabrication de celui-ci
EP4238141A4 (fr) Dispositifs à diodes électroluminescentes
EP4358163A4 (fr) Diode électroluminescente et dispositif à semi-conducteur
EP4184596A4 (fr) Diode électroluminescente et appareil d'affichage la comprenant
EP4135056A4 (fr) Diode électroluminescente multi-bande à puce unique
JP1788689S (ja) 発光ダイオード
JP1774348S (ja) 発光ダイオード
EP4167297A4 (fr) Dispositif à diode mps et son procédé de préparation
KR102260480B9 (ko) 유기 발광 소자 및 그 제조 방법
EP4415061A4 (fr) Élément de diode électroluminescente
EP4207262A4 (fr) Structure semi-conductrice et son procédé de préparation
EP4388248C0 (fr) Dispositif d'éclairage, luminaire et procédé de fabrication
EP4320379C0 (fr) Agencement de filament à del
EP4085218C0 (fr) Agencement de filament à del
EP4238139A4 (fr) Dispositifs à diodes électroluminescentes
JP1790727S (ja) 発光ダイオード

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20221014

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: H01L0033060000

Ipc: H01L0027150000

A4 Supplementary search report drawn up and despatched

Effective date: 20240408

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 25/075 20060101ALN20240402BHEP

Ipc: H01L 33/44 20100101ALI20240402BHEP

Ipc: H01L 33/38 20100101ALI20240402BHEP

Ipc: H01L 33/00 20100101ALI20240402BHEP

Ipc: H01L 27/15 20060101AFI20240402BHEP