CN1129964C - 耐热性优异的固态传感器件及其制造方法 - Google Patents

耐热性优异的固态传感器件及其制造方法 Download PDF

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Publication number
CN1129964C
CN1129964C CN99104426A CN99104426A CN1129964C CN 1129964 C CN1129964 C CN 1129964C CN 99104426 A CN99104426 A CN 99104426A CN 99104426 A CN99104426 A CN 99104426A CN 1129964 C CN1129964 C CN 1129964C
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CN
China
Prior art keywords
solid
sensing chip
state sensing
ccd
binding agent
Prior art date
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Expired - Fee Related
Application number
CN99104426A
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English (en)
Chinese (zh)
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CN1230782A (zh
Inventor
成田博史
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Renesas Electronics Corp
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NEC Corp
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Publication date
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Publication of CN1230782A publication Critical patent/CN1230782A/zh
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Publication of CN1129964C publication Critical patent/CN1129964C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN99104426A 1998-03-26 1999-03-26 耐热性优异的固态传感器件及其制造方法 Expired - Fee Related CN1129964C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP07974198A JP3173586B2 (ja) 1998-03-26 1998-03-26 全モールド型固体撮像装置およびその製造方法
JP79741/98 1998-03-26
JP79741/1998 1998-03-26

Publications (2)

Publication Number Publication Date
CN1230782A CN1230782A (zh) 1999-10-06
CN1129964C true CN1129964C (zh) 2003-12-03

Family

ID=13698654

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99104426A Expired - Fee Related CN1129964C (zh) 1998-03-26 1999-03-26 耐热性优异的固态传感器件及其制造方法

Country Status (5)

Country Link
US (1) US6144107A (de)
EP (1) EP0949675A3 (de)
JP (1) JP3173586B2 (de)
KR (1) KR100293138B1 (de)
CN (1) CN1129964C (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008074A (en) 1998-10-01 1999-12-28 Micron Technology, Inc. Method of forming a synchronous-link dynamic random access memory edge-mounted device
US6753922B1 (en) * 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
US6452268B1 (en) * 2000-04-26 2002-09-17 Siliconware Precision Industries Co., Ltd. Integrated circuit package configuration having an encapsulating body with a flanged portion and an encapsulating mold for molding the encapsulating body
US6509560B1 (en) 2000-11-13 2003-01-21 Amkor Technology, Inc. Chip size image sensor in wirebond package with step-up ring for electrical contact
US6620646B1 (en) 2000-11-13 2003-09-16 Amkor Technology, Inc. Chip size image sensor wirebond package fabrication method
US6629633B1 (en) 2000-11-13 2003-10-07 Amkor Technology, Inc. Chip size image sensor bumped package fabrication method
US6528857B1 (en) * 2000-11-13 2003-03-04 Amkor Technology, Inc. Chip size image sensor bumped package
US7122908B2 (en) * 2001-02-01 2006-10-17 Micron Technology, Inc. Electronic device package
US6759266B1 (en) 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
US6603183B1 (en) * 2001-09-04 2003-08-05 Amkor Technology, Inc. Quick sealing glass-lidded package
US6512286B1 (en) * 2001-10-09 2003-01-28 Siliconware Precision Industries Co., Ltd. Semiconductor package with no void in encapsulant and method for fabricating the same
WO2003098702A1 (en) * 2002-05-15 2003-11-27 Matsushita Electric Industrial Co., Ltd. Optical detector, optical head device, optical information processing device, and optical information processing method
US7262074B2 (en) * 2002-07-08 2007-08-28 Micron Technology, Inc. Methods of fabricating underfilled, encapsulated semiconductor die assemblies
US20050098710A1 (en) * 2003-11-10 2005-05-12 Jackson Hsieh Image sensor package
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
JP2005217322A (ja) * 2004-01-30 2005-08-11 Toshiba Corp 固体撮像装置用半導体素子とそれを用いた固体撮像装置
KR100592368B1 (ko) * 2004-07-06 2006-06-22 삼성전자주식회사 반도체 소자의 초박형 모듈 제조 방법
JP2006237105A (ja) * 2005-02-23 2006-09-07 Tdk Corp 電子部品およびその製造方法
JP2007173496A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Ind Co Ltd 固体撮像素子用パッケージおよび固体撮像装置
JP2009016405A (ja) * 2007-06-30 2009-01-22 Zycube:Kk 固体撮像装置
JP2009049218A (ja) * 2007-08-21 2009-03-05 Nec Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167037A (ja) * 1983-03-14 1984-09-20 Oki Electric Ind Co Ltd 半導体装置
EP0253664B1 (de) * 1986-07-16 1992-10-14 Canon Kabushiki Kaisha Halbleiterphotosensor und Verfahren zu dessen Herstellung
JPH0750758B2 (ja) * 1987-01-30 1995-05-31 株式会社日立製作所 耐熱性樹脂封止半導体装置
JPS63269554A (ja) * 1987-04-27 1988-11-07 Mitsubishi Electric Corp 半導体装置
JPS63269557A (ja) * 1987-04-27 1988-11-07 Nec Corp リ−ドフレ−ム
JPH03116857A (ja) * 1989-09-29 1991-05-17 Mitsui Petrochem Ind Ltd 発光または受光装置
JP2974700B2 (ja) * 1989-11-30 1999-11-10 東レ・ダウコーニング・シリコーン株式会社 導電性接着剤
EP0509065A1 (de) * 1990-08-01 1992-10-21 Staktek Corporation Gehäuse für integrierte schaltung von ultrahoher dichte, verfahren und gerät
JPH0797652B2 (ja) * 1990-11-28 1995-10-18 浜松ホトニクス株式会社 受光素子
JP2533001B2 (ja) * 1991-02-27 1996-09-11 三洋電機株式会社 固体撮像素子の製造方法
KR960009089B1 (ko) * 1993-03-04 1996-07-10 문정환 패키지 성형용 금형 및 그 금형을 이용한 플라스틱 고체촬상소자 패키지 제조방법 및 패키지
US5557066A (en) * 1993-04-30 1996-09-17 Lsi Logic Corporation Molding compounds having a controlled thermal coefficient of expansion, and their uses in packaging electronic devices
JPH08335720A (ja) * 1995-06-08 1996-12-17 Nichia Chem Ind Ltd 窒化物半導体発光ダイオード

Also Published As

Publication number Publication date
JPH11274447A (ja) 1999-10-08
KR19990078327A (ko) 1999-10-25
US6144107A (en) 2000-11-07
EP0949675A3 (de) 2000-04-19
JP3173586B2 (ja) 2001-06-04
EP0949675A2 (de) 1999-10-13
KR100293138B1 (ko) 2001-06-15
CN1230782A (zh) 1999-10-06

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Effective date: 20030328

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Owner name: RENESAS KANSAI CO., LTD.

Free format text: FORMER NAME: NEC CORP.

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Address after: Kawasaki, Kanagawa, Japan

Patentee after: Renesas Electronics Corporation

Address before: Kawasaki, Kanagawa, Japan

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Granted publication date: 20031203

Termination date: 20140326