CN1130730C - 动态随机存取存储器 - Google Patents

动态随机存取存储器 Download PDF

Info

Publication number
CN1130730C
CN1130730C CN96191400A CN96191400A CN1130730C CN 1130730 C CN1130730 C CN 1130730C CN 96191400 A CN96191400 A CN 96191400A CN 96191400 A CN96191400 A CN 96191400A CN 1130730 C CN1130730 C CN 1130730C
Authority
CN
China
Prior art keywords
mentioned
memory bank
memory
refresh
banks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN96191400A
Other languages
English (en)
Chinese (zh)
Other versions
CN1169205A (zh
Inventor
小L·R·莫特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1169205A publication Critical patent/CN1169205A/zh
Application granted granted Critical
Publication of CN1130730C publication Critical patent/CN1130730C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
CN96191400A 1995-09-14 1996-06-27 动态随机存取存储器 Expired - Lifetime CN1130730C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/527,950 1995-09-14
US08/527,950 US5654929A (en) 1995-09-14 1995-09-14 Refresh strategy for DRAMs

Publications (2)

Publication Number Publication Date
CN1169205A CN1169205A (zh) 1997-12-31
CN1130730C true CN1130730C (zh) 2003-12-10

Family

ID=24103635

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96191400A Expired - Lifetime CN1130730C (zh) 1995-09-14 1996-06-27 动态随机存取存储器

Country Status (12)

Country Link
US (1) US5654929A (2)
EP (1) EP0792506B1 (2)
JP (1) JP4166274B2 (2)
KR (1) KR100248259B1 (2)
CN (1) CN1130730C (2)
AU (1) AU6393496A (2)
DE (1) DE69621419T2 (2)
FI (1) FI113572B (2)
IN (1) IN192635B (2)
RU (1) RU2163035C2 (2)
TW (1) TW303469B (2)
WO (2) WO1997010602A1 (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101042933B (zh) * 2007-04-12 2010-05-19 复旦大学 非挥发sram单元、阵列及其操作方法和应用
CN101504865B (zh) * 2009-03-06 2011-06-22 成都市华为赛门铁克科技有限公司 存储系统的数据处理方法及存储设备

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610493B1 (en) 1993-06-17 2003-08-26 Brigham And Women's Hospital Screening compounds for the ability to alter the production of amyloid-β peptide
US5841686A (en) * 1996-11-22 1998-11-24 Ma Laboratories, Inc. Dual-bank memory module with shared capacitors and R-C elements integrated into the module substrate
KR100243335B1 (ko) * 1996-12-31 2000-02-01 김영환 독립적인 리프레쉬 수단을 가지는 데이지 체인 구조의 반도체 장치
DE19855445C1 (de) * 1998-12-01 2000-02-24 Siemens Ag Vorrichtung zur Verringerung der elektromagnetischen Emission bei integrierten Schaltungen mit Treiberstufen
JP4270707B2 (ja) * 1999-04-09 2009-06-03 株式会社東芝 ダイナミック型半導体記憶装置
US7124285B2 (en) * 2001-03-29 2006-10-17 Intel Corporation Peak power reduction when updating future file
US6532175B1 (en) * 2002-01-16 2003-03-11 Advanced Micro Devices, In. Method and apparatus for soft program verification in a memory device
JP6314673B2 (ja) * 2014-06-11 2018-04-25 富士電機株式会社 半導体装置
KR20160013624A (ko) * 2014-07-28 2016-02-05 에스케이하이닉스 주식회사 리프레쉬 회로
US10490251B2 (en) 2017-01-30 2019-11-26 Micron Technology, Inc. Apparatuses and methods for distributing row hammer refresh events across a memory device
KR20190075341A (ko) 2017-12-21 2019-07-01 에스케이하이닉스 주식회사 반도체 메모리 장치
US11200944B2 (en) 2017-12-21 2021-12-14 SK Hynix Inc. Semiconductor memory apparatus operating in a refresh mode and method for performing the same
WO2019222960A1 (en) 2018-05-24 2019-11-28 Micron Technology, Inc. Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling
US10573370B2 (en) 2018-07-02 2020-02-25 Micron Technology, Inc. Apparatus and methods for triggering row hammer address sampling
US10685696B2 (en) 2018-10-31 2020-06-16 Micron Technology, Inc. Apparatuses and methods for access based refresh timing
CN113168861B (zh) 2018-12-03 2024-05-14 美光科技公司 执行行锤刷新操作的半导体装置
CN117198356A (zh) 2018-12-21 2023-12-08 美光科技公司 用于目标刷新操作的时序交错的设备和方法
US10957377B2 (en) 2018-12-26 2021-03-23 Micron Technology, Inc. Apparatuses and methods for distributed targeted refresh operations
US11615831B2 (en) * 2019-02-26 2023-03-28 Micron Technology, Inc. Apparatuses and methods for memory mat refresh sequencing
US11227649B2 (en) 2019-04-04 2022-01-18 Micron Technology, Inc. Apparatuses and methods for staggered timing of targeted refresh operations
US11069393B2 (en) 2019-06-04 2021-07-20 Micron Technology, Inc. Apparatuses and methods for controlling steal rates
US10978132B2 (en) 2019-06-05 2021-04-13 Micron Technology, Inc. Apparatuses and methods for staggered timing of skipped refresh operations
US11302374B2 (en) 2019-08-23 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic refresh allocation
US11302377B2 (en) 2019-10-16 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic targeted refresh steals
US11309010B2 (en) 2020-08-14 2022-04-19 Micron Technology, Inc. Apparatuses, systems, and methods for memory directed access pause
US11348631B2 (en) 2020-08-19 2022-05-31 Micron Technology, Inc. Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed
US11380382B2 (en) 2020-08-19 2022-07-05 Micron Technology, Inc. Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit
US11557331B2 (en) 2020-09-23 2023-01-17 Micron Technology, Inc. Apparatuses and methods for controlling refresh operations
US11222686B1 (en) 2020-11-12 2022-01-11 Micron Technology, Inc. Apparatuses and methods for controlling refresh timing
US11264079B1 (en) 2020-12-18 2022-03-01 Micron Technology, Inc. Apparatuses and methods for row hammer based cache lockdown
US12125514B2 (en) 2022-04-28 2024-10-22 Micron Technology, Inc. Apparatuses and methods for access based refresh operations
US12112787B2 (en) 2022-04-28 2024-10-08 Micron Technology, Inc. Apparatuses and methods for access based targeted refresh operations

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887240A (en) * 1987-12-15 1989-12-12 National Semiconductor Corporation Staggered refresh for dram array
US5113372A (en) * 1990-06-06 1992-05-12 Micron Technology, Inc. Actively controlled transient reducing current supply and regulation circuits for random access memory integrated circuits
JPH06338187A (ja) * 1993-05-27 1994-12-06 Melco:Kk Ｄｒａｍを用いたメモリ装置
US5465237A (en) * 1994-12-01 1995-11-07 Advanced Peripherals Labs, Inc. RAS encoded generator for a memory bank

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101042933B (zh) * 2007-04-12 2010-05-19 复旦大学 非挥发sram单元、阵列及其操作方法和应用
CN101504865B (zh) * 2009-03-06 2011-06-22 成都市华为赛门铁克科技有限公司 存储系统的数据处理方法及存储设备

Also Published As

Publication number Publication date
EP0792506A4 (en) 1998-08-19
JP4166274B2 (ja) 2008-10-15
FI972050L (fi) 1997-05-14
IN192635B (2) 2004-05-08
RU2163035C2 (ru) 2001-02-10
EP0792506A1 (en) 1997-09-03
CN1169205A (zh) 1997-12-31
KR100248259B1 (ko) 2000-03-15
JPH10509269A (ja) 1998-09-08
TW303469B (2) 1997-04-21
US5654929A (en) 1997-08-05
AU6393496A (en) 1997-04-01
DE69621419D1 (de) 2002-07-04
WO1997010601A1 (en) 1997-03-20
FI972050A0 (fi) 1997-05-14
DE69621419T2 (de) 2003-01-16
KR970707554A (ko) 1997-12-01
EP0792506B1 (en) 2002-05-29
WO1997010602A1 (en) 1997-03-20
FI113572B (fi) 2004-05-14

Similar Documents

Publication Publication Date Title
CN1130730C (zh) 动态随机存取存储器
TWI289849B (en) Refresh control circuit and method for multi-bank structure DRAM
CN104488031B (zh) 响应于数据访问执行存储装置的刷新
US7433258B2 (en) Posted precharge and multiple open-page RAM architecture
US20240420753A1 (en) Row hammer refresh operations, and related memory devices, systems, and methods
US8599634B1 (en) Circuit and method for refreshing a memory module
CN1252822C (zh) 半导体存储器
CN114121076A (zh) 用于控制刷新操作的设备和方法
US20030007407A1 (en) Semiconductor memory device, method for controlling same, and electronic information apparatus
US20040073745A1 (en) Bit line segmenting in random access memories
CN102834812B (zh) 大存储器块的阶层组织
JPH07141864A (ja) ダイナミック型半導体記憶装置
US6073203A (en) Method for the continuous readout of a data sequence from a memory
WO2004027781A1 (en) Refreshing of multi-port memory in integrated circuits
DE19933539A1 (de) Integrierter Speicher
WO2009093548A1 (ja) 半導体記憶装置
US20050088894A1 (en) Auto-refresh multiple row activation
JPH01227299A (ja) メモリのリフレッシュ制御方式
CN1158663C (zh) 动态随机存储器
KR0161471B1 (ko) 디램의 페이지모드 동작방법
CN1921008A (zh) 存储器控制系统和存储器控制电路
DE102012207562A1 (de) Verfahren und Managementeinheit zum Auffrischen sowie Speicherbauelement
KR940005770B1 (ko) 확장된 데이타 액세스 타임 제어방법 및 장치
JPH06176566A (ja) メモリリフレッシュ方式
JPH05274874A (ja) メモリリフレッシュ制御装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant